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S. V. Simonov

Publications and source records attributed to S. V. Simonov.

3 recordsLinked to original sources

Shubnikov-de Haas oscillations and electronic correlations in the layered organic metal $κ$-(BETS)$_2$Mn[N(CN)$_2$]$_3$

We present magnetoresistance studies of the quasi-two-dimensional organic conductor $κ$-(BETS)$_2$Mn[N(CN)$_2$]$_3$, where BETS stands for bis\-(ethylene\-dithio)\-tetra\-selena\-fulvalene. Under a moderate pressure of 1.4\,kbar, required for stabilizing the metallic ground state, Shubnikov - de Haas oscillations, associated with a classical and a magnetic-breakdown cyclotron orbits on the cylindrical Fermi surface, have been found at fields above 10\,T. The effective cyclotron masses evaluated from the temperature dependence of the oscillation amplitudes reveal strong renormalization due to many-body interactions. The analysis of the relative strength of the oscillations corresponding to the different orbits and its dependence on magnetic field suggests an enhanced role of electron-electron interactions on flat parts of the Fermi surface.

cond-mat.str-el

Magnetic Torque in k-(BETS)2Mn[N(CN)2]3

Peculiarities observed in the field dependencies of the magnetic torque in k-(BETS)2Mn[N(CN)2]3 measured at T=1.5K, H=0-150kOe, have been explained from the viewpoint of the two interacting spin subsystems, one associated with d-electron spins of Mn2+ residing in the anion layer, and the other with the spins of pi-electrons which localize below the metal-insulator transition temperature, T_MI=25K, forming a long-range antiferromagnetic structure. The principal axes of the Mn2+ spin subsystem have been defined. A model of antiferromagnetic pi-spin arrangement has been suggested that associates the observed kinks in the torque H-dependencies with a spin-reorientation transition. One of the observed effects is ascribed to the pi-d interaction between the two spin subsystems.

cond-mat.str-el

Angle-dependent magnetoresistance in the weakly incoherent interlayer transport regime

We present comparative studies of the orientation effect of a strong magnetic field on the interlayer resistance of $α$-(BEDT-TTF)$_2$KHg(SCN)$_4$ samples characterized by different crystal quality. We find striking differences in their behavior which is attributed to the breakdown of the coherent charge transport across the layers in the lower quality sample. In the latter case, the nonoscillating magnetoresistance background is essentially a function of only the out-of-plane field component, in contradiction to the existing theory.

cond-mat.str-el