arXiv subjects

S. Vollebregt

Publications and source records attributed to S. Vollebregt.

4 recordsLinked to original sources

arXiv2026

Enhanced electron-beam lithography to reduce the frequency scatter of 200-400 GHz superconducting microstrip resonators for on-chip filterbank spectrometers

Integrated superconducting spectrometers (ISSs) provide the instantaneous bandwidth, sensitivity, and scalable architecture for large-scale spectroscopic surveys in submillimeter-wave astronomy and cosmology. However, the accuracy with which the resonant frequencies of superconducting microstrip band pass filters can be spaced, has limited the spectral resolution for these spectrometers with continuous spectral coverage to $\frac{F}{\Delta F} < 500$. The origin of this frequency scatter has been largely unknown. In this work, we demonstrate a four-fold improvement in the frequency spacing of superconducting microstrip resonators by optimizing electron-beam lithography. We find that reducing the beam step size (BSS) on the nanometer scale reduces the random frequency scatter, and that avoiding main-field stitching across filter patterns can eliminate a systematic frequency shift between groups of resonators, indicating the different origins of these two modes of frequency deviation. These findings demonstrate that nanometer-scale control of lithographic processes is imperative for the realization of the next-generation integrated superconducting spectrometers with higher spectral resolution.

physics.ins-det↗

arXiv2026

Advances in the Fabrication of On-chip Superconducting Integral Field Units for CMB and Line-Intensity Astronomy

Studying the polarization and spectral distortion of the Cosmic Microwave Background (CMB) in tandem with intensity fluctuations of the Cosmic Infrared Background (CIB) allows us to verify our assumptions on cosmic inflation and investigate the dynamics and evolution of galaxy clusters in the last 10 billion years. Because of its broadband emission and being an all-sky extended source, observing the entire CMB in detail is a very time-consuming and expensive exercise. Fortunately, in the last few years, the on-chip superconducting spectrometer technology has moved out of the lab and into the telescope. With its compact size and background-limited sensitivity, this family of instruments is particularly well-suited for fast and large area observations in a relatively unexplored range of the electromagnetic spectrum. However, recent examples of this technology do not yet reach the requirements needed for large spectroscopic and polarimetric surveys of the CMB. We formulate several of these requirements and introduce novel on-chip components and fabrication techniques. We introduce a cross-over to enable distinguishing signal polarization, minimize signal loss by locally optimized lithography of a coplanar-waveguide (CPW), lower the spectral resolution of microstrip filters by deposition of a dielectric layer, and increase the yield of the spectrometer array by removing individual line shorts. These together have culminated in the successful fabrication of a fourteen-spaxel IFU.

physics.ins-det↗

arXiv2024

Vibrational modes as the origin of dielectric loss at 0.27$\unicode{x2013}$100 THz in a-SiC:H

Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band ($\mathrm{\sim}$1$\unicode{x2013}$10 GHz) the cryogenic and low-power dielectric loss is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band ($\mathrm{\sim}$0.1$\unicode{x2013}$1 THz) is not understood. We measured the loss of hydrogenated amorphous SiC (a-SiC:H) films in the 0.27$\unicode{x2013}$100 THz range using superconducting microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in the a-SiC:H above 200 GHz.

astro-ph.IM↗

arXiv2021

Hydrogenated Amorphous Silicon Carbide: A Low-loss Deposited Dielectric for Microwave to Submillimeter Wave Superconducting Circuits

Low-loss deposited dielectrics will benefit superconducting devices such as integrated superconducting spectrometers, superconducting qubits and kinetic inductance parametric amplifiers. Compared with planar structures, multi-layer structures such as microstrips are more compact and eliminate radiation loss at high frequencies. Multi-layer structures are most easily fabricated with deposited dielectrics, which typically exhibit higher dielectric loss than crystalline dielectrics. We measured the sub-kelvin and low-power microwave and mm-submm wave dielectric loss of hydrogenated amorphous silicon carbide (a-SiC:H), using a superconducting chip with NbTiN/a-SiC:H/NbTiN microstrip resonators. We deposited the a-SiC:H by plasma-enhanced chemical vapor deposition at a substrate temperature of 400°C. The a-SiC:H has a mm-submm loss tangent ranging from $0.80 \pm 0.01 \times 10^{-4}$ to $1.43 \pm 0.04 \times 10^{-4}$ in the range of 270 to 385 GHz. The microwave loss tangent is $3.2 \pm 0.2 \times 10^{-5}$. These are the lowest low-power sub-kelvin loss tangents that have been reported for microstrip resonators at mm-submm and microwave frequencies. We observe that the loss tangent increases with frequency. The a-SiC:H films are free of blisters and have low stress: $-$20 MPa compressive at 200 nm thickness to 60 MPa tensile at 1000 nm thickness.

cond-mat.mtrl-sci↗