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S. Wiedmann

Publications and source records attributed to S. Wiedmann.

At least 37 records · Page 2Linked to original sources

High field charge order across the phase diagram of $YBa_2Cu_3O_y$

In hole-doped cuprates there is now compelling evidence that inside the pseudogap phase, charge order breaks translational symmetry leading to a reconstruction of the Fermi surface. In $YBa_2Cu_3O_y$ charge order emerges in two steps: a 2D order found at zero field and at high temperature inside the pseudogap phase, and a 3D order that is superimposed below the superconducting transition $T_c$ when superconductivity is weakened by a magnetic field. Several issues still need to be addressed such as the effect of disorder, the relationship between those charge orders and their respective impact on the Fermi surface. Here, we report high magnetic field sound velocity measurements of the 3D charge order in underdoped $YBa_2Cu_3O_y$ in a large doping range. We found that the 3D charge order exists over the same doping range as its 2D counterpart, indicating an intimate connection between the two distinct orders. Moreover, we argue that the Fermi surface is reconstructed above the onset temperature of 3D charge order.

cond-mat.supr-con↗

Thermodynamic signatures of the field-induced states of graphite

When a magnetic field confines the carriers of a Fermi sea to their lowest Landau level, electron-electron interactions are expected to play a significant role in determining the electronic ground state. Graphite is known to host a sequence of magnetic field-induced states driven by such interactions. Three decades after their discovery, thermodynamic signatures of these instabilities are still elusive. Here, we report the first detection of these transitions with sound velocity. We find that the phase transition occurs in the vicinity of a magnetic field at which at least one of the Landau levels cross the Fermi energy. The evolution of elastic constant anomalies with temperature and magnetic field draws a detailed phase diagram which shows that the ground state evolves in a sequence of thermodynamic phase transitions.Our analysis indicates that electron-electron interaction is not the sole driving force of these transitions and that lattice degrees of freedom play an important role.

cond-mat.str-el↗

Unconventional mass enhancement around the Dirac nodal loop in ZrSiS

The topological properties of fermions arise from their low-energy Dirac-like band dispersion and associated chiralities. Initially confined to points, extensions of the Dirac dispersion to lines and even loops have now been uncovered and semimetals hosting such features have been identified. However, experimental evidence for the enhanced correlation effects predicted to occur in these topological semimetals has been lacking. Here, we report a quantum oscillation study of the nodal loop semimetal ZrSiS in high magnetic fields that reveals significant enhancement in the effective mass of the quasiparticles residing near the nodal loop. Above a threshold field, magnetic breakdown occurs across gaps in the loop structure with orbits that enclose different windings around its vertices, each winding accompanied by an additional π-Berry phase. The amplitudes of these breakdown orbits exhibit an anomalous temperature dependence. These findings demonstrate the emergence of novel, correlation-driven physics in ZrSiS associated with the Dirac-like quasiparticles.

cond-mat.mes-hall↗

Linear magnetoresistance in a quasi-free two dimensional electron gas in an ultra-high mobility GaAs quantum well

We report a magnetotransport study of an ultra-high mobility ($\barμ\approx 25\times 10^6$\,cm$^2$\,V$^{-1}$\,s$^{-1}$) $n$-type GaAs quantum well up to 33 T. A strong linear magnetoresistance (LMR) of the order of 10$^5$ % is observed in a wide temperature range between 0.3 K and 60 K. The simplicity of our material system with a single sub-band occupation and free electron dispersion rules out most complicated mechanisms that could give rise to the observed LMR. At low temperature, quantum oscillations are superimposed onto the LMR. Both, the featureless LMR at high $T$ and the quantum oscillations at low $T$ follow the empirical resistance rule which states that the longitudinal conductance is directly related to the derivative of the transversal (Hall) conductance multiplied by the magnetic field and a constant factor $α$ that remains unchanged over the entire temperature range. Only at low temperatures, small deviations from this resistance rule are observed beyond $ν=1$ that likely originate from a different transport mechanism for the composite fermions.

cond-mat.mes-hall↗

Quantum interference in a macroscopic van der Waals conductor

Quantum corrections to charge transport can give rise to an oscillatory magnetoconductance, typically observed in mesoscopic samples with a length shorter than or comparable with the phase coherence length. Here, we report the observation of magnetoconductance oscillations periodic in magnetic field with an amplitude of the order of $e^2/h$ in macroscopic samples of Highly Oriented Pyrolytic Graphite (HOPG). The observed effect emerges when all carriers are confined to their lowest Landau levels. We argue that this quantum interference phenomenon can be explained by invoking moiré superlattices with a discrete distribution in periodicity. According to our results, when the magnetic length $\ell_B$, the Fermi wave length $λ_F$ and the length scale of fluctuations in local chemical potential are comparable in a layered conductor, quantum corrections can be detected over centimetric length scales.

cond-mat.mes-hall↗

Anisotropic and strong negative magneto-resistance in the three-dimensional topological insulator Bi2Se3

We report on high-field angle-dependent magneto-transport measurements on epitaxial thin films of Bi2Se3, a three-dimensional topological insulator. At low temperature, we observe quantum oscillations that demonstrate the simultaneous presence of bulk and surface carriers. The magneto- resistance of Bi2Se3 is found to be highly anisotropic. In the presence of a parallel electric and magnetic field, we observe a strong negative longitudinal magneto-resistance that has been consid- ered as a smoking-gun for the presence of chiral fermions in a certain class of semi-metals due to the so-called axial anomaly. Its observation in a three-dimensional topological insulator implies that the axial anomaly may be in fact a far more generic phenomenon than originally thought.

cond-mat.mes-hall↗

Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures

Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here we report the direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly aligned graphene crystals. We use a strong in-plane magnetic field as a tool to resolve the contributions of the chiral electronic states that have a phase difference between the two components of their vector wavefunction. Our experiments not only shed light on chirality, but also demonstrate a technique for preparing graphene's Dirac electrons in a particular quantum chiral state in a selected valley.

cond-mat.mes-hall↗

Magnetotransport in single layer graphene in a large parallel magnetic field

Graphene on hexagonal boron-nitride (h-BN) is an atomically flat conducting system that is ideally suited for probing the effect of Zeeman splitting on electron transport. We demonstrate by magneto-transport measurements that a parallel magnetic field up to 30 Tesla does not affect the transport properties of graphene on h-BN even at charge neutrality where such an effect is expected to be maximal. The only magnetoresistance detected at low carrier concentrations is shown to be associated with a small perpendicular component of the field which cannot be fully eliminated in the experiment. Despite the high mobility of charge carries at low temperatures, we argue that the effects of Zeeman splitting are fully masked by electrostatic potential fluctuations at charge neutrality.

cond-mat.mes-hall↗

High-temperature quantum Hall effect in finite gapped HgTe quantum wells

We report on the observation of the quantum Hall effect at high temperatures in HgTe quantum wells with a finite band gap and a thickness below and above the critical thickness $d_\textnormal{c}$ that separates a conventional semiconductor from a two-dimensional topological insulator. At high carrier concentrations we observe a quantized Hall conductivity up to 60\,K with energy gaps between Landau Levels of the order of 25\,meV, in good agreement with the Landau Level spectrum obtained from $\mathbf{k\cdot p}$-calculations. Using the scaling approach for the plateau-plateau transition at $ν=2\rightarrow 1$, we find the scaling coefficient $κ=0.45 \pm 0.04$ to be consistent with the universality of scaling theory and we do not find signs of increased electron-phonon interaction to alter the scaling even at these elevated temperatures. Comparing the high temperature limit of the quantized Hall resistance in HgTe quantum wells with a finite band gap with room temperature experiment in graphene, we find the energy gaps at the break-down of the quantization to exceed the thermal energy by the same order of magnitude.

cond-mat.mes-hall↗

Lifting of the Landau level degeneracy in graphene devices in a tilted magnetic field

We report on transport and capacitance measurements of graphene devices in magnetic fields up to 30 T. In both techniques, we observe the full splitting of Landau levels and we employ tilted field experiments to address the origin of the observed broken symmetry states. In the lowest energy level, the spin degeneracy is removed at filling factors $ν=\pm1$ and we observe an enhanced energy gap. In the higher levels, the valley degeneracy is removed at odd filling factors while spin polarized states are formed at even $ν$. Although the observation of odd filling factors in the higher levels points towards the spontaneous origin of the splitting, we find that the main contribution to the gap at $ν= -4,-8$, and $-12$ is due to the Zeeman energy.

cond-mat.mes-hall↗

Quantum oscillations of the topological surface states in low carrier concentration crystals of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$

We report a high-field magnetotransport study on selected low-carrier crystals of the topological insulator Bi$_{2-x}$Sb${_x}$Te$_{3-y}$Se$_{y}$. Monochromatic Shubnikov - de Haas (SdH) oscillations are observed at 4.2~K and their two-dimensional nature is confirmed by tilting the magnetic field with respect to the sample surface. With help of Lifshitz-Kosevich theory, important transport parameters of the surface states are obtained, including the carrier density, cyclotron mass and mobility. For $(x,y)=(0.50,1.3)$ the Landau level plot is analyzed in terms of a model based on a topological surface state in the presence of a non-ideal linear dispersion relation and a Zeeman term with $g_s = 70$ or $-54$. Input parameters were taken from the electronic dispersion relation measured directly by angle resolved photoemission spectroscopy on crystals from the same batch. The Hall resistivity of the same crystal (thickness of 40~$μ$m) is analyzed in a two-band model, from which we conclude that the ratio of the surface conductance to the total conductance amounts to 32~\%.

cond-mat.mes-hall↗

Transport and thermoelectric properties of the LaAlO$_3$/SrTiO$_3$ interface

The transport and thermoelectric properties of the interface between SrTiO$_3$ and a 26-monolayer thick LaAlO$_3$-layer grown at high oxygen-pressure have been investigated at temperatures from 4.2 K to 100 K and in magnetic fields up to 18 T. For $T>$ 4.2 K, two different electron-like charge carriers originating from two electron channels which contribute to transport are observed. We probe the contributions of a degenerate and a non-degenerate band to the thermoelectric power and develop a consistent model to describe the temperature dependence of the thermoelectric tensor. Anomalies in the data point to an additional magnetic field dependent scattering.

cond-mat.mes-hall↗

Magnetoresistance from broken spin helicity

The propensity of some materials and multilayers to have a magnetic field dependent resistance, called magnetoresistance, has found commercial applications such as giant magnetoresistance harddisk read heads. But magnetoresistance can also be a powerful probe of electronic and magnetic interactions in matter. For example, magnetoresistance can be used to analyze multiband conductivity, conduction inhomogeneity, localized magnetic moments, and (fractional) Landau level structure. For materials with strong spin-orbit interaction, magnetoresistance can be used as a probe for weak antilocalization or a nontrivial Berry phase, such as in topological insulator surface states. For the three dimensional topological insulators a large and linear magnetoresistance is often used as indication for underlying non-trivial topology, although the origin of this effect has not yet been established. Here, we observe a large magnetoresistance in the conducting bulk state of Bi$_2$Te$_3$. We show that this type of large magnetoresistance is due to the competition between helical spin-momentum locking (i.e. spin rotates with momentum direction) and the unidirectional spin alignment by an applied magnetic field. Warping effects are found to provide the (quasi) linear dependence on magnetic field. We provide a quantitative model for the helicity breaking induced magnetoresistance that can be applied to a vast range of materials, surfaces or interfaces with weak to strong spin-orbit interactions, such as the contemporary oxide interfaces, bulk Rashba systems, and topological insulator surface states.

cond-mat.mes-hall↗

Evolution of the fermi surface of a doped topological insulator with carrier concentration

In an ideal bulk topological-insulator (TI) conducting surface states protected by time reversal symmetry enfold an insulating crystal. However, the archetypical TI, Bi2Se3, is actually never insulating; it is in fact a relatively good metal. Nevertheless, it is the most studied system among all the TIs, mainly due to its simple band-structure and large spin-orbit gap. Recently it was shown that copper intercalated Bi2Se3 becomes superconducting and it was suggested as a realization of a topological superconductor (TSC). Here we use a combination of techniques that are sensitive to the shape of the Fermi surface (FS): the Shubnikov-de Haas (SdH) effect and angle resolved photoemission spectroscopy (ARPES) to study the evolution of the FS shape with carrier concentration, n. We find that as n increases, the FS becomes 2D-like. These results are of crucial importance for understanding the superconducting properties of CuxBi2Se3.

cond-mat.mes-hall↗

Magnetothermoelectric properties of Bi2Se3

We present a study of entropy transport in Bi2Se3 at low temperatures and high magnetic fields. In the zero-temperature limit, the magnitude of the Seebeck coefficient quantitatively tracks the Fermi temperature of the 3D Fermi surface at Γ-point as the carrier concentration changes by two orders of magnitude (10$^{17}$ to 10$^{19}$cm$^{-3}$). In high magnetic fields, the Nernst response displays giant quantum oscillations indicating that this feature is not exclusive to compensated semi-metals. A comprehensive analysis of the Landau Level spectrum firmly establishes a large $g$-factor in this material and a substantial decrease of the Fermi energy with increasing magnetic field across the quantum limit. Thus, the presence of bulk carriers significantly affects the spectrum of the intensively debated surface states in Bi2Se3 and related materials.

cond-mat.mes-hall↗

Quantized coexisting electrons and holes in graphene measured using temperature dependent magneto-transport

We present temperature-dependent magneto-transport experiments around the charge neutrality point in graphene and determine the amplitude of potential fluctuations $s$ responsible for the formation of electron-hole puddles. The experimental value $s \approx 20$ meV is considerably larger than in conventional semiconductors which implies a strong localization of charge carriers observable up to room temperature. Surprisingly, in the quantized regime, the Hall resistivity overshoots the highest plateau values at high temperatures. We demonstrate by model calculations that such a peculiar behavior is expected in any system with coexisting electrons and holes when the energy spectrum is quantized and the carriers are partially localized.

cond-mat.mes-hall↗

Interaction phenomena in graphene seen through quantum capacitance

Capacitance measurements provide a powerful means of probing the density of states. The technique has proved particularly successful in studying 2D electron systems, revealing a number of interesting many-body effects. Here, we use large-area high-quality graphene capacitors to study behavior of the density of states in this material in zero and high magnetic fields. Clear renormalization of the linear spectrum due to electron-electron interactions is observed in zero field. Quantizing fields lead to splitting of the spin- and valley-degenerate Landau levels into quartets separated by interaction-enhanced energy gaps. These many-body states exhibit negative compressibility but the compressibility returns to positive in ultrahigh B. The reentrant behavior is attributed to a competition between field-enhanced interactions and nascent fractional states.

cond-mat.mes-hall↗

Probing the surface states in Bi2Se3 using the Shubnikov-de Haas effect

Shubnikov-de Haas (SdH) oscillations are observed in Bi2Se3 flakes with high carrier concentration and low bulk mobility. These oscillations probe the protected surface states and enable us to extract their carrier concentration, effective mass and Dingle temperature. The Fermi momentum obtained is in agreement with angle resolved photoemission spectroscopy (ARPES) measurements performed on crystals from the same batch. We study the behavior of the Berry phase as a function of magnetic field. The standard theoretical considerations fail to explain the observed behavior.

cond-mat.mes-hall↗