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S. X. Dou

Publications and source records attributed to S. X. Dou.

At least 37 records · Page 2Linked to original sources
arXiv2008

Unconventional superconductivity of NdFeAsO0.82F0.18 indicated by the low temperature dependence of the lower critical field Hc1

We measured the initial M-H curves for a sample of the newly discovered superconductor NdFeAsO0.82Fe0.18, which had a critical temperature, Tc, of 51 K, and was fabricated at the high pressure of 6 GPa. The lower critical field, Hc1, was extracted from the deviation point of the Meissner linearity in the M-H curves, which show linear temperature dependence in the low temperature region down to 5 K. The Hc1(T) indicates no s-wave superconductivity, but rather an unconventional superconductivity with a nodal gap structure. Furthermore, the linearity of Hc1 at low temperature does not hold at high temperature, but shows other characteristics, indicating that this superconductor might have multi-gap features. Based on the low temperature nodal gap structure, we estimate that the maximum gap magnitude delta 0 = (1.6+- 0.2) kBTc.

cond-mat.supr-con↗
arXiv2008

Flux pinning mechanism in NdFeAsO0.82F0.18 superconductor: Thermally activated flux flow and charge carrier mean free path fluctuation pinning

The flux pinning mechanism of NdO0.82F0.18FeAs superconductor made under high pressure, with a critical temperature, Tc, of 51 K, has been investigated in detail in this work. The field dependence of the magnetization and the temperature dependence of the magnetoresistivity were measured in fields up to 13 T. The field dependence of the critical current density, Jc(B), was analyzed within the collective pinning model. A crossover field, Bsb, from the single vortex to the small vortex bundle pinning regime was observed. The temperature dependence of Bsb(T) is in good agreement with the delta-l pinning mechanism, i.e., pinning associated with fluctuations in the charge-carrier mean free path, l. Analysis of resistive transition broadening revealed that thermally activated flux flow is found to be responsible for the resistivity contribution in the vicinity of Tc. The activation energy U0/kB is 2000 K in low fields and scales as B (-1/3) over a wide field range. Our results indicate that the NdO0.82F0.18FeAs has stronger intrinsic pinning than Bi-2212 and also stronger than MgB2 for H > 8 T.

cond-mat.supr-con↗
arXiv2007

Mechanism of enhancement of electromagnetic properties of MgB2 by nano-SiC doping

A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances Hc2, while the defects, small grain size and nanoinclusions induced by C incorporation and low temperature processing are responsible for the improvement in Jc. The irreversibility field (Hirr) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2.

cond-mat.supr-con↗
arXiv2006

Improvement of Critical Current Density and Upper Critical Field in MgB2 using Carbohydrate

We evaluated the doping effects of carbohydrate (malic acid, C4H6O5), from 0wt% to 30wt% of total MgB2, on the phase, lattice parameters, critical temperature, resistivity, and upper critical field of MgB2 superconductor. The lattice parameters calculated show a large decrease in the a-axis for MgB2 + C4H6O5 samples, but no change in the c-axis. This is an indication of the carbon substitution into boron coming from C4H6O5, resulting in enhancement of resistivity, critical current density, and upper critical field. Specifically, the critical current density value of 25000 Acm2 at 5 K and 8 T for the MgB2 + 30wt% C4H6O5 sample is higher than that of the un-doped MgB2 by a factor of 21. In addition, resistivity value for all the MgB2 + C4H6O5 samples ranged from 80 to 90 microohm centimeter at 40 K, which is higher than for un-doped MgB2. The increased resistivity indicates increased impurity scattering due to carbon, resulting in enhanced upper critical field.

cond-mat.supr-con↗
arXiv2006

Enhancement of in-field Jc in MgB2/Fe wire using single and multi-walled nanotubes

We investigated the doping effects of SWCNTs and MWCNTs on the Tc, lattice parameters, Jc(B), microstructure, and Hc2 of MgB2/Fe wire. These effects systematically showed the following sequence for Tc and the a-axis: the SWCNT doped wire < the MWshortCNT doped wire < the MWlongCNT doped wire < un-doped wire, while Jc(B) followed the sequence of the SWCNT doped wire > the MWshortCNT doped wire > the MWlongCNT doped wire > un-doped wire. A dominating mechanism behind all these findings is the level of C substitution for B in the lattice. The best Jc(B) and Hc2 were obtained on SWCNT doped wire because the level of C substitution for B in this wire is higher than all others.

cond-mat.supr-con↗
arXiv2006

Strong enhancement of critical current density in MgB2 superconductor using carbohydrate doping

With the relatively high critical temperature (Tc) of 39 K1 and the high critical current density (Jc) of > 100000 A/cm2 in moderate fields, magnesium diboride (MgB2) superconductors could offer the promise of important large-scale and electronic device applications to be operated at 20 K. A significant enhancement in the electromagnetic properties of MgB2 has been achieved through doping with various form of carbon (C). However, doping effect has been limited by the agglomeration of nano-sized dopants and the poor reactivity of C containing dopants with MgB2. Un-reacted dopants result in a reduction of superconductor volume. In this work, we demonstrate the advantages of carbohydrate doping over other dopants, resulting in an increase of in-field Jc by more than one order of magnitude without any degradation of self-field Jc. As there are numerous carbohydrates readily available this finding has significant ramifications not only for the fabrication of MgB2 but also for many C based compounds and composites.

cond-mat.supr-con↗
arXiv2006

The doping effect of multiwall carbon nanotube on MgB2/Fe superconductor wire

We evaluated the doping effect of two types of multiwall carbon nanotube (CNT) with different aspect ratios on MgB2/Fe monofilament wires. Relationships between microstructure, magnetic critical current density (Jc), critical temperature (Tc), upper critical field (Hc2), and irreversibility field (Hirr) for pure and CNT doped wires were systematically studied for sintering temperature from 650oC to 1000oC. As the sintering temperature increased, Tc for short CNT doped sample slightly decreased, while Tc for long CNT doped sample increased. This indicates better reactivity between MgB2 and short CNT due to its small aspect ratio and substitution of carbon (C) from short CNT for boron (B) occurs. In addition, short CNT doped samples sintered at the high temperatures of 900oC and 1000oC exhibited excellent Jc, and that value was approximately 104 A/cm2 in fields up to 8 T at 5 K. This suggests that short CNT is a promising carbon source for MgB2 superconductor with excellent Jc. In particular, inclusion of nanosized MgO particles and substitution of C into the MgB2 lattice could result in strong flux pinning centers.

cond-mat.supr-con↗
arXiv2006

Magnetic field processing to enhance critical current densities of MgB2 superconductors

Magnetic field of up to 12 T was applied during the sintering process of pure MgB2 and carbon nanotube (CNT) doped MgB2 wires. We have demonstrated that magnetic field processing results in grain refinement, homogeneity and significant enhancement in Jc(H) and Hirr. The Jc of pure MgB2 wire increased by up to a factor of 3 to 4 and CNT doped MgB2 by up to an order of magnitude in high field region respectively, compared to that of the non-field processed samples. Hirr for CNT doped sample reached 7.7 T at 20 K. Magnetic field processing reduces the resistivity in CNT doped MgB2, straightens the entangled CNT and improves the adherence between CNTs and MgB2 matrix. No crystalline alignment of MgB2 was observed. This method can be easily scalable for a continuous production and represents a new milestone in the development of MgB2 superconductors and related systems.

cond-mat.supr-con↗
arXiv2004

Large Upper Critical Field and Irreversibility Field in MgB2 wires with SiC additions

Resistive transition measurements are reported for Magnesium diboride strands with SiC dopants. The SiC was added as 10 mol of SiC to 90 mol of binary magnesium diboride. Three different SiC powders were used, the average particle sizes were 200 nm, 30 nm, and 15 nm. The strands were heat treated for times ranging from 5 to 30 minutes at temperatures from 675 to 900. Strands with 200 nm size SiC additions had Hirr and Bc2 which maximized at 25.4 T and 29.7 T after heating at 800C for 30 minutes. The highest values were seen for a strand with 15 nm SiC heated at 725C for 30 minutes which had a Hirr of 29 T and a Bc2 higher than 33 T

cond-mat.supr-con↗
arXiv2004

Irreversibility Field and Flux Pinning in MgB2 with and Without SiC Additions

Critical current density was measured at 4.2 K for MgB2 strands with and without SiC additions. In some cases measurements were performed on longer (1 m) samples wound on barrels, and these were compared to magnetic measurements. Most measurements were performed on short samples at higher fields (up to 18 T). It was found that in-situ processed strands with 10% SiC additions HT at 700-800C show improved Hr and Fp values as compared to control samples, with Hr increasing by 1.5 T. At 900C even larger improvements are seen, with Hr reaching 18 T and Fp values maximizing at 20 GN/m3.

cond-mat.supr-con↗
arXiv2004

Effect of Nano Scale Fe Doping on Superconducting Properties of MgB2

Iron is an important sheath material for fabrication of MgB2 wires. However, the effect of Fe doping on the superconducting properties of MgB2 remains controversial. In this work, we present results of nano-scale Fe particle doping in to MgB2. The Fe doping experiments were performed using both bulk and thin film form. It was found that Fe doping did not affect the lattice parameters of MgB2, as evidenced by the lack of change in the XRD peak positions for MgB2. Because of the high reactivity of nano-scale Fe particles, Fe doping is largely in the form of FeB at low doping level while Fe2B was detected at 10wt% doping by both XRD and TEM. There is no evidence for Fe substitution for Mg. The transition temperature decreased modestly with increasing Fe doping levels. The Jc(H) performance was severely depressed at above 3wt% doping level. The detrimental effect of nano-scale Fe doping on both Tc and Jc(H) is attributable to the grain decoupling as a result of magnetic scattering of Fe-containing dopants at grain boundaries.

cond-mat.supr-con↗
arXiv2004

The effect of sample size on field dependence of Jc for MgB2 superconductor

A strong effect of sample size on magnetic Jc(H) was observed for bulk MgB2 when Jc is obtained directly from the critical state model. Thus obtained zero-field Jc (Jc0) decreases strongly with the sample size, attaining a constant value for the samples larger than a few millimetres. On the other hand, the irreversibility field (Hirr) defined at Jc = 100 A/cm2 increases with the sample size. The decrease of Jc0 is described in terms of voids in the bulk MgB2 samples and superconducting screening around the cells of superconducting material between these voids (35 micro-m), because of concentration of the current in the narrow bridges connecting the cells. For samples larger than a few millimetres, the value of magnetic Jc is in agreement with the transport Jc and it is restricted by the voids. The critical state model is not suitable for obtaining Jc for small bulk MgB2. The increase of Hirr with the sample size is an artefact of defining Hirr by the value of Jc at which an additional superconducting screening on 1mm scale dominates Dm.

cond-mat.supr-con↗
arXiv2003

Comparative study of in situ and ex situ MgB2 films deposited by pulsed laser deposition

Two types of MgB2 films were prepared by pulsed laser deposition (PLD) with in situ and ex situ annealing processes respectively. Significant differences in properties between the two types of films were found. The ex situ MgB2 film has a Tc of 38.1K, while the in situ film has a depressed Tc of 34.5K. The resistivity at 40K for the in situ film is larger than that of the ex situ film by a factor of 6. The residual resistivity ratios (RRR) are 1.1 and 2.1 for the in situ and ex situ films respectively. The Jc-H curves of the in situ film show a much weaker field dependence than those of the ex situ film, attributable to stronger flux pinning in the in situ film. The small-grain feature and high oxygen level may be critical for the significant improvement of Jc in the in situ annealed MgB2 film.

cond-mat.supr-con↗
arXiv2003

Correlated vortex pinning in Si-nanoparticle doped MgB2

The magnetoresistivity and critical current density of well characterized Si-nanoparticle doped and undoped Cu-sheathed MgB$_{2}$ tapes have been measured at temperatures $T\geq 28$ K in magnetic fields $B\leq 0.9$ T. The irreversibility line $B_{irr}(T)$ for doped tape shows a stepwise variation with a kink around 0.3 T. Such $B_{irr}(T)$ variation is typical for high-temperature superconductors with columnar defects (a kink occurs near the matching field $% B_ϕ$) and is very different from a smooth $B_{irr}(T)$ variation in undoped MgB$_{2}$ samples. The microstructure studies of nanoparticle doped MgB$_{2}$ samples show uniformly dispersed nanoprecipitates, which probably act as a correlated disorder. The observed difference between the field variations of the critical current density and pinning force density of the doped and undoped tape supports the above findings.

cond-mat.supr-con↗
arXiv2003

Si doping on MgB2 thin films by pulsed laser deposition

A series of MgB2 thin films were fabricated by pulsed laser deposition (PLD), doped with various amounts of Si up to a level of 18wt%. Si was introduced into the PLD MgB2 films by sequential ablation of a stoichiometric MgB2 target and a Si target. The doped films were deposited at 250 C and annealed in situ at 685 C for 1min. Up to a Si doping level of ~11wt%, the superconducting transition temperature (Tc) of the film does not change significantly, as compared to the control, undoped film. The magnetic critical current density (Jc) of the film at 5K was increased by 50% for a Si doping level of ~3.5wt%, as compared to the control film. Also, the irreversibility field of Si-doped MgB2 films (Hirr) at low temperature is higher than for the undoped film.

cond-mat.supr-con↗
arXiv2003

Effect of carbon nanotube doping on critical current density of MgB2 superconductor

The effect of doping MgB2 with carbon nanotubes on transition temperature, lattice parameters, critical current density and flux pinning was studied for MgB2-xCx with x = 0, 0.05, 0.1, 0.2 and 0.3. The carbon substitution for B was found to enhance Jc in magnetic fields but depress Tc. The depression of Tc, which is caused by the carbon substitution for B, increases with increasing doping level, sintering temperature and duration. By controlling the extent of the substitution and addition of carbon nanotubes we can achieve the optimal improvement on critical current density and flux pinning in magnetic fields while maintaining the minimum reduction in Tc. Under these conditions, Jc was enhanced by two orders of magnitude at 8T and 5K and 7T and 10K. Jc was more than 10,000A/cm2 at 20K and 4T and 5K and 8.5T, respectively.

cond-mat.supr-con↗
arXiv2003

Nanoscale-SiC doping for enhancing Jc and Hc2 in the Superconducting MgB2

The effect of nanoscale-SiC doping of MgB2 was investigated using transport and magnetic measurements. It was found that there is a clear correlation between the critical temperature Tc, the resistivity r, the residual resistivity ratio, RRR = R(300K)/R(40K), the irreversibility field H* and the alloying state in the samples. SiC-doping introduced many nano-scale precipitates, provoking an increase of r(40K) from 1 mW-cm (RRR = 15) for the clean limit sample to 300 mW-cm (RRR = 1.75) for the SiC-doped sample, leading to significant enhancement of Hc2 and H* with only minor effect on Tc. EELS analysis revealed a number of nano-scale impurity phases: Mg2Si, MgO, MgB4, BOx, SixByOz, BC and unreacted SiC in the doped sample. TEM study showed an extensive domain structure of 2-4nm domains induced by SiC doping. The Jc for the 10% nano-SiC doped sample increased substantially at all fields and temperatures compared to the undoped samples, due to the strong increase in Hc2 and H* produced by SiC doping.

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