arXiv subjects

S. X. Du

Publications and source records attributed to S. X. Du.

831 records · Page 47Linked to original sources

arXiv2012

Precision measurement of the branching fractions of J/psi -> pi+pi-pi0 and psi' -> pi+pi-pi0

We study the decays of the J/psi and psi' mesons to pi+pi-pi0 using data samples at both resonances collected with the BES III detector in 2009. We measure the corresponding branching fractions with unprecedented precision and provide mass spectra and Dalitz plots. The branching fraction for J/psi -> pi+pi-pi0 is determined to be (2.137 +- 0.004 (stat.) +0.058-0.056 (syst.) +0.027-0.026 (norm.))*10-2, and the branching fraction for psi' -> pi+pi-pi0 is measured as (2.14 +- 0.03 (stat.) +0.08-0.07 (syst.) +0.09-0.08 (norm.))*10-4. The J/psi decay is found to be dominated by an intermediate rho(770) state, whereas the psi' decay is dominated by di-pion masses around 2.2 GeV/c2, leading to strikingly different Dalitz distributions.

hep-ex↗

arXiv2009

Graphene based quantum dots

Laterally localized electronic states are identified on a single layer of graphene on ruthenium. The individual states are separated by 3 nm and comprise regions of about 90 carbon atoms. This constitutes a quantum dot array, evidenced by quantum well resonances that are modulated by the corrugation of the graphene layer. The quantum well resonances are strongest on the isolated "hill" regions where the graphene is decoupled from the surface. This peculiar nanostructure is expected to become important for single electron physics where it bridges zero-dimensional molecule-like and two-dimensional graphene on a highly regular lattice.

cond-mat.mtrl-sci↗

arXiv2007

Millimeter-Scale, Highly Ordered Single Crystalline Graphene Grown on Ru (0001) Surface

We demonstrate a method for synthesizing large scale single layer graphene by thermal annealing of ruthenium single crystal containing carbon. Low energy electron diffraction indicates the graphene grows to as large as millimeter dimensions with good long-range order, and scanning tunneling microscope shows perfect crystallinity. Analysis of Moire pattern augmented with first-principles calculations shows the graphene layer is incommensurate with the underlying Ru(0001) surface forming a N by N superlattice with an average lattice strain of ~ +0.81%. Our findings offer an effective method for producing high quality single crystalline graphene for fundamental research and large-scale graphene wafer for device fabrication and integration.

cond-mat.mtrl-sci↗