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S. Y. Zhou

Publications and source records attributed to S. Y. Zhou.

At least 37 records · Page 2Linked to original sources
arXiv2011

Unveiling the quantum critical point of an Ising chain

Quantum phase transitions occur at zero temperature upon variation of some nonthermal control parameters. The Ising chain in a transverse field is probably the most-studied model undergoing such a transition, from ferromagnetic to paramagnetic state1,2. This model can be exactly solved by using a Jordan-Wigner transformation, which transforms the spins into noninteracting spinless fermions1. At the quantum critical point, the magnetic excitations can carry arbitrarily low energy and dominate the low temperature properties. Here we report the unveiling of such quantum critical point in quasi-one-dimensional Ising ferromagnet CoNb2O6 by ultra-low-temperature thermal conductivity measurements. We find that in the paramagnetic state, phonons are scattered by the magnetic excitations above certain temperature Ts, which corresponds to a gap. As predicted by the theoretical model1, this gap linearly goes to zero with decreasing the transverse field, thus determining the quantum critical point of the Ising chain.

cond-mat.str-el↗
arXiv2010

Thermal conductivity of overdoped BaFe$_{1.73}$Co$_{0.27}$As$_2$ single crystal: Evidence for nodeless multiple superconducting gaps and interband interactions

The in-plane thermal conductivity $κ$ of overdoped FeAs-based superconductor BaFe$_{1.73}$Co$_{0.27}$As$_2$ ($T_c$ = 8.1 K) single crystal was measured down to 80 mK. In zero field, the residual linear term $κ_0/T$ is negligible, suggesting a nodeless superconducting gap in the $ab$-plane. In magnetic field, $κ_0/T$ increases rapidly, very different from that of conventional s-wave superconductors. This anomalous $κ_0/T(H)$ may reveal an exotic superconducting gap structure in overdoped BaFe$_{1.73}$Co$_{0.27}$As$_2$: the vanishing hole ($β$) pocket has a much larger gap than the electron ($γ$ and $δ$) pockets which contain most of the carriers. Such an exotic gap structure is an evidence for superconducting state induced by interband interactions, in which the band with the {\it smaller} density of states has a {\it larger} gap.

cond-mat.supr-con↗
arXiv2010

Quantum criticality and nodal superconductivity in the FeAs-based superconductor KFe2As2

The in-plane resistivity $ρ$ and thermal conductivity $κ$ of FeAs-based superconductor KFe$_2$As$_2$ single crystal were measured down to 50 mK. We observe non-Fermi-liquid behavior $ρ(T) \sim T^{1.5}$ at $H_{c_2}$ = 5 T, and the development of a Fermi liquid state with $ρ(T) \sim T^2$ when further increasing field. This suggests a field-induced quantum critical point, occurring at the superconducting upper critical field $H_{c_2}$. In zero field there is a large residual linear term $κ_0/T$, and the field dependence of $κ_0/T$ mimics that in d-wave cuprate superconductors. This indicates that the superconducting gaps in KFe$_2$As$_2$ have nodes, likely d-wave symmetry. Such a nodal superconductivity is attributed to the antiferromagnetic spin fluctuations near the quantum critical point.

cond-mat.supr-con↗
arXiv2009

Bilayer splitting and c-axis coupling in bilayer manganites showing colossal magnetoresistance

By performing angle-resolved photoemission spectroscopy of the bilayer colossal magnetoresistive (CMR) manganite, $La_{2-2x}Sr_{1+2x}Mn_{2}O_{7}$, we provide the complete mapping of the Fermi level spectral weight topology. Clear and unambiguous bilayer splitting of the in-plane 3d$_{x^2-y^2}$ band, mapped throughout the Brillouin zone, and the full mapping of the 3d$_{3z^2-r^2}$ band are reported. Peculiar doping and temperature dependencies of these bands imply that as transition from the ferromagnetic metallic phase approaches, either as a function of doping or temperature, coherence along the c-axis between planes within the bilayer is lost, resulting in reduced interplane coupling. These results suggest that interplane coupling plays a large role in the CMR transition.

cond-mat.str-el↗
arXiv2009

Thermal conductivity study of KFe$_2$As$_2$ single crystal: clear evidence for unconventional superconducting gap with nodes

The in-plane resistivity $ρ$ and thermal conductivity $κ$ of extremely overdoped KFe$_2$As$_2$ ($T_c$ = 3.0 K) single crystal were studied. It is found that $ρ\sim T^{1.5}$ at low temperature, a typical non-Fermi liquid behavior of electrons scattered by antiferromagnetic spin fluctuations. In zero field, we observed a large residual linear term $κ_0/T$, about one third of the normal-state value. In low magnetic fields, $κ_0/T(H)$ increases very fast. Such a behavior of $κ_0/T$ mimics the d-wave cuprate superconductors, therefore provides clear evidence for nodes in the superconducting gap of KFe$_2$As$_2$. Based on the Fermi surface topology of KFe$_2$As$_2$, it is believed that the dominant intraband pairing via antiferromagnetic spin fluctuations results in the unconventional superconducting gap with nodes.

cond-mat.supr-con↗
arXiv2009

Instability of two dimensional graphene: Breaking sp2 bonds with soft X-rays

We study the stability of various kinds of graphene samples under soft X-ray irradiation. Our results show that in single layer exfoliated graphene (a closer analogue to two dimensional material), the in-plane carbon-carbon bonds are unstable under X-ray irradiation, resulting in nanocrystalline structures. As the interaction along the third dimension increases by increasing the number of graphene layers or through the interaction with the substrate (epitaxial graphene), the effect of X-ray irradiation decreases and eventually becomes negligible for graphite and epitaxial graphene. Our results demonstrate the importance of the interaction along the third dimension in stabilizing the long range in-plane carbon-carbon bonding, and suggest the possibility of using X-ray to pattern graphene nanostructures in exfoliated graphene.

cond-mat.mtrl-sci↗
arXiv2009

Nodeless superconducting gap in electron-doped BaFe$_{1.9}$Ni$_{0.1}$As$_2$ probed by quasiparticle heat transport

The in-plane thermal conductivity $κ$ of electron-doped iron-arsenide superconductor BaFe$_{1.9}$Ni$_{0.1}$As$_2$ ($T_c$ = 20.3 K) single crystal was measured down to 70 mK. In zero field, the absence of a residual linear term $κ_0/T$ at $ T \to 0$ is strong evidence for nodeless superconducting gap. In magnetic field, $κ_0/T$ shows a slow field dependence up to $H$ = 14.5 T ($\approx$ 30% $H_{c_2}$). This is consistent with the superconducting gap structure demonstrated by angle-resolved photoemission spectroscopy experiments in BaFe$_{1.85}$Co$_{0.15}$As$_2$ ($T_c$ = 25.5 K), where isotropic superconducting gaps with similar size on hole and electron pockets were observed.

cond-mat.supr-con↗
arXiv2009

Multi-gap nodeless superconductivity in iron selenide FeSe$_x$: evident from quasiparticle heat transport

The in-plane thermal conductivity $κ$ of the iron selenide superconductor FeSe$_x$ ($T_c$ = 8.8 K) were measured down to 120 mK and up to 14.5 T ($\simeq 3/4 H_{c2}$). In zero field, the residual linear term $κ_0/T$ at $ T \to 0$ is only about 16 $μ$W K$^{-2}$ cm$^{-1}$, less than 4% of its normal state value. Such a small $κ_0/T$ does not support the existence of nodes in the superconducting gap. More importantly, the field dependence of $κ_0/T$ in FeSe$_x$ is very similar to that in NbSe$_2$, a typical multi-gap s-wave superconductor. We consider our data as strong evidence for multi-gap nodeless superconductivity in FeSe$_x$. This kind of superconducting gap structure may be generic for all Fe-based superconductors.

cond-mat.supr-con↗
arXiv2009

Broadband electromagnetic response and ultrafast dynamics of few-layer epitaxial graphene

We study the broadband optical conductivity and ultrafast carrier dynamics of epitaxial graphene in the few-layer limit. Equilibrium spectra of nominally buffer, monolayer, and multilayer graphene exhibit significant terahertz and near-infrared absorption, consistent with a model of intra- and interband transitions in a dense Dirac electron plasma. Non-equilibrium terahertz transmission changes after photoexcitation are shown to be dominated by excess hole carriers, with a 1.2-ps mono-exponential decay that reflects the minority-carrier recombination time.

cond-mat.mtrl-sci↗
arXiv2009

Self-doping effects in epitaxially grown graphene

Self-doping in graphene has been studied by examining single-layer epitaxially grown graphene samples with differing characteristic lateral terrace widths. Low energy electron microscopy was used to gain real-space information about the graphene surface morphology, which was compared with data obtained by angle-resolved photoemission spectroscopy to study the effect of the monolayer graphene terrace width on the low energy dispersions. By altering the graphene terrace width, we report significant changes in the electronic structure and quasiparticle relaxation time of the material, in addition to a terrace width-dependent doping effect.

cond-mat.mes-hall↗
arXiv2008

Kohn anomaly and interplay of electron-electron and electron-phonon interactions in epitaxial graphene

The interplay of electron-phonon (el-ph) and electron-electron (el-el) interactions in epitaxial graphene is studied by directly probing its electronic structure. We found a strong coupling of electrons to the soft part of the A1g phonon evident by a kink at 150+/-15 meV, while the coupling of electrons to another expected phonon E2g at 195 meV can only be barely detected. The possible role of the el-el interaction to account for the enhanced coupling of electrons to the A1g phonon, and the contribution of el-ph interaction to the linear imaginary part of the self energy at high binding energy are also discussed. Our results reveal the dominant role of the A1g phonon in the el-ph interaction in graphene, and highlight the important interplay of el-el and el-ph interactions in the self energy of graphene.

cond-mat.mtrl-sci↗
arXiv2008

Metal to insulator transition in epitaxial graphene induced by molecular doping

The capability to control the type and amount of charge carriers in a material and, in the extreme case, the transition from metal to insulator is one of the key challenges of modern electronics. By employing angle resolved photoemission spectroscopy (ARPES) we find that a reversible metal to insulator transition and a fine tuning of the charge carriers from electrons to holes can be achieved in epitaxial bilayer and single layer graphene by molecular doping. The effects of electron screening and disorder are also discussed. These results demonstrate that epitaxial graphene is suitable for electronics applications, as well as provide new opportunities for studying the hole doping regime of the Dirac cone in graphene.

cond-mat.mtrl-sci↗
arXiv2008

Departure from the conical dispersion in epitaxial graphene

The pi bands of epitaxially grown graphene are studied by using high resolution angle resolved photoemission spectroscopy. Clear deviations from the conical dispersion expected for massless Dirac fermions and an anomalous increase of the scattering rate are observed in the vicinity of the Dirac point energy. Possible explanations for such anomalies are discussed in terms of many-body interactions and the opening of a gap. We present detailed experimental evidences in support of the gap scenario. This finding reveals a fundamental intrinsic property of epitaxial graphene and demonstrates the possibility of engineering the band gap in epitaxial graphene.

cond-mat.mtrl-sci↗
arXiv2008

Origin of the energy bandgap in epitaxial graphene

We studied the effect of quantum confinement on the size of the band gap in single layer epitaxial graphene. Samples with different graphene terrace sizes are studied by using low energy electron microscopy (LEEM) and angle-resolved photoemission spectroscopy (ARPES). The direct correlation between the terrace size extracted from LEEM and the gap size extracted from ARPES shows that quantum confinement alone cannot account for the large gap observed in epitaxial graphene samples.

cond-mat.mtrl-sci↗
arXiv2007

Substrate-induced band gap opening in epitaxial graphene

Graphene has shown great application potentials as the host material for next generation electronic devices. However, despite its intriguing properties, one of the biggest hurdles for graphene to be useful as an electronic material is its lacking of an energy gap in the electronic spectra. This, for example, prevents the use of graphene in making transistors. Although several proposals have been made to open a gap in graphene's electronic spectra, they all require complex engineering of the graphene layer. Here we show that when graphene is epitaxially grown on the SiC substrate, a gap of ~ 0.26 is produced. This gap decreases as the sample thickness increases and eventually approaches zero when the number of layers exceeds four. We propose that the origin of this gap is the breaking of sublattice symmetry owing to the graphene-substrate interaction. We believe our results highlight a promising direction for band gap engineering of graphene.

cond-mat.mtrl-sci↗
arXiv2007

Probing the Band Structure of LaTe_2 Using Angle Resolved Photoemission Spectroscopy

With the current interest in the rare-earth tellurides as high temperature charge density wave materials, a greater understanding of the physics of these systems is needed, particularly in the case of the ditellurides. We report a detailed study of the band structure of LaTe_2 in the charge density wave state using high-resolution angle resolved photoemission spectroscopy (ARPES). From this work we hope to provide insights into the successes and weaknesses of past theoretical study as well as helping to clear up prior ambiguities by providing an experimental basis for future work in the tellurides.

cond-mat.str-el↗
arXiv2007

Revealing Charge Density Wave Formation in the LaTe_2 System by Angle Resolved Photoemission Spectroscopy

We present the first direct study of charge density wave (CDW) formation in quasi-2D single layer LaTe_2 using high-resolution angle resolved photoemission spectroscopy (ARPES) and low energy electron diffraction (LEED). CDW formation is driven by Fermi surface (FS) nesting, however characterized by a surprisingly smaller gap (50meV) than seen in the double layer RTe_3 compounds, extending over the entire FS. This establishes LaTe_2 as the first reported semiconducting 2D CDW system where the CDW phase is FS nesting driven. In addition, the layer dependence of this phase in the tellurides and the possible transition from a stripe to a checkerboard phase is discussed.

cond-mat.str-el↗