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Sabine ONeal

Publications and source records attributed to Sabine ONeal.

2 recordsLinked to original sources

Robust Parallel Laser Driving of Quantum Dots for Multiplexing of Quantum Light Sources

Deterministic sources of quantum light (i.e. single photons or pairs of entangled photons) are required for a whole host of applications in quantum technology, including quantum imaging, quantum cryptography and the long-distance transfer of quantum information in future quantum networks. Semiconductor quantum dots are ideal candidates for solid-state quantum emitters as these artificial atoms have large dipole moments and a quantum confined energy level structure, enabling the realization of single photon sources with high repetition rates and high single photon purity. Quantum dots may also be triggered using a laser pulse for on-demand operation. The naturally-occurring size variations in ensembles of quantum dots offers the potential to increase the bandwidth of quantum communication systems through wavelength-division multiplexing, but conventional laser triggering schemes based on Rabi rotations are ineffective when applied to inequivalent emitters. Here we report the demonstration of the simultaneous triggering of >10 quantum dots using adiabatic rapid passage. We show that high-fidelity quantum state inversion is possible in a system of quantum dots with a 15~meV range of optical transition energies using a single broadband, chirped laser pulse, laying the foundation for high-bandwidth, multiplexed quantum networks.

quant-ph

Scaling NbTiN-based ac-powered Josephson digital to 400M devices/cm$^2$

We describe a fabrication stackup for digital logic with 16 superconducting NbTiN layers, self-shunted a-silicon barrier Josephson Junctions (JJs), and low loss, high-$κ$ tunable HZO capacitors. The stack enables 400 MJJ/cm$^2$ device density, efficient routing, and AC power distribution on a resonant network. The materials scale beyond 28nm lithography and are compatible with standard high-temperature CMOS processes. We report initial results for two-metal layer NbTiN wires with 50nm critical dimension. A semi-ascendance wire-and-via process module using 193i lithography and 50nm critical dimension has shown cross-section uniformity of 1%=1s across the 300mm wafer, critical temperature of 12.5K, and critical current of 0.1mA at 4.2K. We also present a new design of the resonant AC power network enabled by NbTiN wires and HZO MIM capacitors. The design matches the device density and provides a 30 GHz clock with estimated efficiency of up to 90%. Finally, magnetic imaging of patterned NbTiN ground planes shows low intrinsic defectivity and consistent trapping of vorteces in 0.5 mm holes spaced on a 20 $μ$m x 20 $μ$m grid.

physics.app-ph