Sadeed Hameed | Searcharxiv

arXiv2026

Large bias-tunable magnetoresistance from spin-dependent interlayer hybridization in van der Waals antiferromagnet CrSBr-based heterostructures

We explore the large magnetoresistance (MR) in \ce{hBN}/few-layer-graphene/\ce{CrSBr}/few-layer-graphene heterostructures and reveal the mechanism behind its non-monotonic bias dependence. Using bias voltage and temperature as independent tuning knobs, we achieve MR up to \SI{350}{\percent} at \SI{20}{K}, characterized by symmetric M-shaped maxima around $\pm 0.5\,\mathrm{V}$. Continuous tuning of the magnetization angle $\theta$ via a hard-axis magnetic field shows that the barrier band-edge offset varies linearly with $\cos(\theta/2)$, a first-order signature of spin-dependent interlayer hybridization. This linear relationship rules out the Julli\`ere model and a spin-filter projection. We conclude that the magnetic-configuration-dependent band edge, rather than electrode spin polarization, dictates the large magnetoresistance in \ce{CrSBr} junctions.

cond-mat.mes-hall↗

arXiv2025

Switchable Exchange Bias Resulting from Correlated Domain Structures in Orthogonally Coupled Antiferromagnet/Ferromagnet van der Waals Heterostructures

Van der Waals (vdW) magnetic heterostructures offer a versatile platform for engineering interfacial spin interactions with atomic precision, enabling nontrivial spin textures and dynamic behaviors. In this work, we report robust asymmetric magnetization reversal and exchange bias in Fe3GeTe2 (FGT), driven by interlayer exchange coupling with the A-type antiferromagnet CrSBr. Despite the orthogonal magnetic anisotropies out-of-plane easy axis in FGT and in-plane in CrSBr, we observe a strong interfacial exchange interaction that gives rise to pronounced and switchable exchange bias and asymmetric switching in FGT, persisting up to the Néel temperature of CrSBr (132 K) as revealed by anomalous Hall effect measurements. We uncover the microscopic origin of this behavior through cross-sectional magnetic imaging of the domain structure using off-axis electron holography. The results reveal that the asymmetric switching and exchange bias arise from the influence of CrSBr on the domain configuration of FGT, where the in-plane antiferromagnetic state of CrSBr promotes the formation of stripe-like domain structures in FGT with circular rotation of magnetization in the cross-sectional bc plane defined by the easy axes of both FGT and CrSBr. These findings elucidate the mechanism of exchange bias in orthogonally coupled van der Waals systems and demonstrate a pathway for stabilizing three-dimensional domain structures in ferromagnets through interfacial exchange interactions.

cond-mat.mtrl-sci↗