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Sae Hee Ryu

Publications and source records attributed to Sae Hee Ryu.

14 recordsLinked to original sources

Plasmonic polaron in self-intercalated 1T-TiS2

Electron-boson coupling is central to a comprehensive understanding of the diverse physical phenomena emerging from many-body interactions. Yet less attention has been paid to how plasmons, collective bosonic modes of electron density oscillation, interact with conduction electrons and how external parameters can tune this interaction. Here, we present a clear display of composite quasiparticles stemming from electron-plasmon coupling, known as the plasmonic polaron, in self-intercalated 1T-TiS2, by using angle-resolved photoemission spectroscopy (ARPES), high-resolution electron energy loss spectroscopy (HR-EELS) and first-principles calculations. The single particle spectral function exhibits a distinctive plasmon-loss satellite with the same characteristic energy scale determined by HR-EELS measurements. The bosonic energy scale of plasmonic polaron is tunable by controlling charge carrier density and temperature, distinguishing itself from conventional polarons arising from electron-phonon interactions. Furthermore, we find that the dielectric screening strongly affects the formation of the plasmonic polaron states. Our findings provide direct spectroscopic evidence of plasmonic polarons and establish self-intercalated layered materials as a promising platform for studying, controlling, and harnessing plasmonic interactions in quantum materials.

cond-mat.mtrl-sci

Local interface effects modulate global charge order and optical properties of 1T-TaS$_2$/1H-WSe$_2$ heterostructures

1T-TaS$_2$ is a layered charge density wave (CDW) crystal exhibiting sharp phase transitions and associated resistance changes. These resistance steps could be exploited for information storage, underscoring the importance of controlling and tuning CDW states. Given the importance of out-of-plane interactions in 1T-TaS$_2$, modulating interlayer interactions by heterostructuring is a promising method for tailoring CDW phase transitions. In this work, we investigate the optical and electronic properties of heterostructures comprising 1T-TaS$_2$ and monolayer 1H-WSe$_2$. By systematically varying the thickness of 1T-TaS$_2$ and its azimuthal alignment with 1H-WSe$_2$, we find that intrinsic moiré strain and interfacial charge transfer introduce CDW disorder in 1T-TaS$_2$ and modify the CDW ordering temperature. Furthermore, our studies reveal that the interlayer alignment impacts the exciton dynamics in 1H-WSe$_2$, indicating that heterostructuring can concurrently tailor the electronic phases in 1T-TaS$_2$ and the optical properties of 1H-WSe$_2$. This work presents a promising approach for engineering optoelectronic behavior of heterostructures that integrate CDW materials and semiconductors.

cond-mat.mtrl-sci

Pseudogap in a crystalline insulator doped by disordered metals

A key to understand how electrons behave in crystalline solids is the band structure that connects the energy of electron waves to their wavenumber (k). Even in the phase of matter with only short-range order (liquid or amorphous solid), the coherent part of electron waves still possesses a band structure. Theoretical models for the band structure of liquid metals were formulated more than 5 decades ago, but thus far, bandstructure renormalization and pseudogap induced by resonance scattering have remained unobserved. Here, we report the observation of this unusual band structure at the interface of a crystalline insulator (black phosphorus) and disordered dopants (alkali metals). We find that a conventional parabolic band structure of free electrons bends back towards zero k with the pseudogap of 30-240 meV from the Fermi level. This is k renormalization caused by resonance scattering that leads to the formation of quasi-bound states in the scattering potential of alkali-metal ions. The depth of this potential tuned by different kinds of alkali metal (Na, K, Rb, and Cs) allows to classify the pseudogap of p-wave and d-wave resonance. Our results may provide a clue to the puzzling spectrum of various crystalline insulators doped by disordered dopants, such as the waterfall dispersion in cuprates.

cond-mat.str-el

Tailored topotactic chemistry unlocks heterostructures of magnetic intercalation compounds

The construction of thin film heterostructures has been a widely successful archetype for fabricating materials with emergent physical properties. This strategy is of particular importance for the design of multilayer magnetic architectures in which direct interfacial spin--spin interactions between magnetic phases in dissimilar layers lead to emergent and controllable magnetic behavior. However, crystallographic incommensurability and atomic-scale interfacial disorder can severely limit the types of materials amenable to this strategy, as well as the performance of these systems. Here, we demonstrate a method for synthesizing heterostructures comprising magnetic intercalation compounds of transition metal dichalcogenides (TMDs), through directed topotactic reaction of the TMD with a metal oxide. The mechanism of the intercalation reaction enables thermally initiated intercalation of the TMD from lithographically patterned oxide films, giving access to a new family of multi-component magnetic architectures through the combination of deterministic van der Waals assembly and directed intercalation chemistry.

cond-mat.mtrl-sci

Good plasmons in a bad metal

Correlated materials may exhibit unusually high resistivity increasing linearly in temperature, breaking through the Mott-Ioffe-Regel bound, above which coherent quasiparticles are destroyed. The fate of collective charge excitations, or plasmons, in these systems is a subject of debate. Several studies suggest plasmons are overdamped while others detect unrenormalized plasmons. Here, we present direct optical images of low-loss hyperbolic plasmon polaritons (HPPs) in the correlated van der Waals metal MoOCl2. HPPs are plasmon-photon modes that waveguide through extremely anisotropic media and are remarkably long-lived in MoOCl2. Many-body theory supported by photoemission results reveals that MoOCl2 is in an orbital-selective and highly incoherent Peierls phase. Different orbitals acquire markedly different bonding-antibonding character, producing a highly-anisotropic, isolated Fermi surface. The Fermi surface is further reconstructed and made partly incoherent by electronic interactions, renormalizing the plasma frequency. HPPs remain long-lived in spite of this, allowing us to uncover previously unseen imprints of electronic correlations on plasmonic collective modes.

cond-mat.str-el

Comparative Electronic Structures of the Chiral Helimagnets Cr1/3NbS2 and Cr1/3TaS2

Magnetic materials with noncollinear spin textures are promising for spintronic applications. To realize practical devices, control over the length and energy scales of such spin textures is imperative. The chiral helimagnets Cr1/3NbS2 and Cr1/3TaS2 exhibit analogous magnetic phase diagrams with different real-space periodicities and field dependence, positioning them as model systems for studying the relative strengths of the microscopic mechanisms giving rise to exotic spin textures. Here, we carry out a comparative study of the electronic structures of Cr1/3NbS2 and Cr1/3TaS2 using angle-resolved photoemission spectroscopy and density functional theory. We show that bands in Cr1/3TaS2 are more dispersive than their counterparts in Cr1/3NbS2 and connect this result to bonding and orbital overlap in these materials. We also unambiguously distinguish exchange splitting from surface termination effects by studying the dependence of their photoemission spectra on polarization, temperature, and beam size. We find strong evidence that hybridization between intercalant and host lattice electronic states mediates the magnetic exchange interactions in these materials, suggesting that band engineering is a route toward tuning their spin textures. Overall, these results underscore how the modular nature of intercalated transition metal dichalcogenides translates variation in composition and electronic structure to complex magnetism.

cond-mat.mtrl-sci

magnetoARPES: Angle Resolved Photoemission Spectroscopy with Magnetic Field Control

Angle-Resolved Photoemission Spectroscopy (ARPES) is a premier technique for understanding the electronic excitations in conductive, crystalline matter, in which the induced photocurrent is collected and dispersed in energy and angle of emission to reveal the energy- and momentum-dependent single particle spectral function $A(\mathbf{k},ω)$. So far, ARPES in a magnetic field has been precluded due to the need to preserve the electron paths between the sample and detector. In this paper we report progress towards "magnetoARPES", a variant of ARPES that can be conducted in a magnetic field. It is achieved by applying a microscopic probe beam ($\lesssim$ 10 $μ$m ) to a thinned sample mounted upon a special sample holder that generates magnetic field confined to a thin layer near the sample surface. In this geometry we could produce ARPES in magnetic fields up to around $\pm$ 100 mT. The magnetic fields can be varied from purely in-plane to nearly purely out-of-plane, by scanning the probe beam across different parts of the device. We present experimental and simulated data for graphene to explore the aberrations induced by the magnetic field. These results demonstrate the viability of the magnetoARPES technique for exploring symmetry breaking effects in weak magnetic fields.

cond-mat.str-el

On the effects of strain, defects, and interactions on the topological properties of HfTe5

Topological insulators are characterized by spin-momentum-locked massless surface states which are robust under various perturbations. Manipulating such surface states is a topic of vigorous research, as a possible route for the realization of emergent many-body physics in topological systems. Thus far, time-reversal symmetry breaking via Coulomb and magnetic perturbations has been a dominant approach for the tuning of topological states. However, the effect of the structural degrees of freedom on quasi-particle dynamics in topological materials remains elusive. In this work, we demonstrate a transition in HfTe5 between distinct topological phases as a function of either Te vacancy concentration or applied strain; these phases are characterized theoretically as a transition from strong to weak topological insulator and experimentally by a transition from sharp surface states and Dirac crossing to a Fermi-liquid-like quasiparticle state in which these surface-localized features are heavily suppressed. Although vacancies can result in various consequences such as scattering, doping, and structural distortions, we show that changes in the lattice constants play the foremost role in determining the electronic structure, self-energy, and topological states of HfTe5. Our results demonstrate the possibility of using both defect chemistry and strain as control parameters for topological phase transitions and associated many-body physics.

cond-mat.mtrl-sci

Charge order landscape and competition with superconductivity in kagome metals

In kagome metals AV3Sb5 (A = K, Rb, Cs), three-dimensional charge order (3D-CO) is the primary instability that sets the stage for other collective orders to emerge, including unidirectional stripe order, orbital flux order, electronic nematicity, and superconductivity. Here, we use high-resolution angle-resolved photoemission spectroscopy to determine the microscopic structure of three-dimensional charge order (3D-CO) in AV3Sb5 and its interplay with superconductivity. Our approach is based on identifying an unusual splitting of kagome bands induced by 3D-CO, which provides a sensitive way to refine the spatial charge patterns in neighboring kagome planes. We found a marked dependence of the 3D-CO structure on composition and doping. The observed difference between CsV3Sb5 and the other compounds potentially underpins the double-dome superconductivity in CsV3(Sb,Sn)5 and the suppression of Tc in KV3Sb5 and RbV3Sb5. Our results provide fresh insights into the rich phase diagram of AV3Sb5.

cond-mat.str-el

Twofold van Hove singularity and origin of charge order in topological kagome superconductor CsV3Sb5

The layered vanadium antimonides AV3Sb5 (A = K, Rb, Cs) are a recently discovered family of topological kagome metals with a rich phenomenology of strongly correlated electronic phases including charge order and superconductivity. Understanding how the singularities inherent to the kagome electronic structure are linked to the observed many-body phases is a topic of great interest and relevance. Here, we combine angle-resolved photoemission spectroscopy and density functional theory to reveal multiple kagome-derived van Hove singularities (vHs) coexisting near the Fermi level of CsV3Sb5 and analyze their contribution to electronic symmetry breaking. Intriguingly, the vHs in CsV3Sb5 have two distinct flavors - p-type and m-type - which originate from their pure and mixed sublattice characters, respectively. This twofold vHs is unique property of the kagome lattice, and its flavor critically determines the pairing symmetry and ground states emerging in AV3Sb5 series. We establish that, among the multiple vHs in CsV3Sb5, the m-type vHs of the dxz/dyz kagome band and the p-type vHs of the dxy/dx2-y2 kagome band cross the Fermi level to set the stage for electronic symmetry breaking. The former band exhibits pronounced Fermi surface nesting, while the latter contributes via higher-order vHs. Our work reveals the essential role of kagome-derived vHs for the collective phenomena realized in the AV3Sb5 family, paving the way to a deeper understanding of strongly correlated topological kagome systems.

cond-mat.str-el

Holstein polaron in a valley-degenerate two-dimensional semiconductor

Two-dimensional (2D) crystals have emerged as a class of materials with tuneable carrier density. Carrier doping to 2D semiconductors can be used to modulate manybody interactions and to explore novel composite particles. Holstein polaron is a small composite particle of an electron carrying a cloud of self-induced lattice deformation (or phonons), which has been proposed to play a key role in high-temperature superconductivity and carrier mobility in devices. Here, we report the discovery of Holstein polarons in a surface-doped layered semiconductor, MoS2, where a puzzling 2D superconducting dome with the critical temperature of 12 K was found recently. Using a high-resolution band mapping of charge carriers, we found strong band renormalizations collectively identified as a hitherto unobserved spectral function of Holstein polarons. The unexpected short-range nature of electron-phonon (e-ph) coupling in MoS2 can be explained by its valley degeneracy that enables strong intervalley coupling mediated by acoustic phonons. The coupling strength is found to gradually increase along the superconducting dome up to the intermediate regime, suggesting bipolaronic pairing in 2D superconductivity.

cond-mat.supr-con

Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides

Two-dimensional (2D) van-der-Waals semiconductors have emerged as a class of materials with promising device characteristics owing to the intrinsic bandgap. For realistic applications, the ideal is to modify the bandgap in a controlled manner by a mechanism that can be generally applied to this class of materials. Here, we report the observation of a universally tunable bandgap in the family of bulk 2H transition metal dichalcogenides (TMDs) by in situ surface doping of Rb atoms. A series of angle-resolved photoemission spectra unexceptionally shows that the bandgap of TMDs at the zone corners is modulated in the range of 0.8 ~ 2.0 eV, which covers a wide spectral range from visible to near infrared, with a tendency from indirect to direct bandgap. A key clue to understand the mechanism of this bandgap engineering is provided by the spectroscopic signature of symmetry breaking and resultant spin splitting, which can be explained by the formation of 2D electric dipole layers within the surface bilayer of TMDs. Our results establish the surface Stark effect as a universal mechanism of bandgap engineering based on the strong 2D nature of van-der-Waals semiconductors.

cond-mat.mtrl-sci

Two-Dimensional Dirac Fermions Protected by Space-Time Inversion Symmetry in Black Phosphorus

We report the realization of novel symmetry-protected Dirac fermions in a surface-doped two-dimensional (2D) semiconductor, black phosphorus. The widely tunable band gap of black phosphorus by the surface Stark effect is employed to achieve a surprisingly large band inversion up to ~0.6 eV. High-resolution angle-resolved photoemission spectra directly reveal the pair creation of Dirac points and their moving along the axis of the glide-mirror symmetry. Unlike graphene, the Dirac point of black phosphorus is stable, as protected by spacetime inversion symmetry, even in the presence of spin-orbit coupling. Our results establish black phosphorus in the inverted regime as a simple model system of 2D symmetry-protected (topological) Dirac semimetals, offering an unprecedented opportunity for the discovery of 2D Weyl semimetals.

cond-mat.mtrl-sci

Observation of tunable bandgap and anisotropic Dirac semimetal state in black phosphorus

Black phosphorus consists of stacked layers of phosphorene, a two-dimensional semiconductor with promising device characteristics. We report the realization of a widely tunable bandgap in few-layer black phosphorus doped with potassium using an in-situ surface doping technique. Through band-structure measurements and calculations, we demonstrate that a vertical electric field from dopants modulates the bandgap owing to the giant Stark effect and tunes the material from a moderate-gap semiconductor to a band-inverted semimetal. At the critical field of this band inversion, the material becomes a Dirac semimetal with anisotropic dispersion, linear in armchair and quadratic in zigzag directions. The tunable band structure of black phosphorus may allow great flexibility in design and optimization of electronic and optoelectronic devices.

cond-mat.mtrl-sci