arXiv subjects

Sage R. Bauers

Publications and source records attributed to Sage R. Bauers.

18 recordsLinked to original sources

arXiv2026

Thin film synthesis of SrZn2P2 with SrI2 post-annealing for enhanced crystallinity and optoelectronic quality

Ternary Zintl phosphides are promising light-absorbing semiconductors for thin-film optoelectronic applications, but strategies for controlling their microstructure and optoelectronic quality remain underexplored. Here, we report the synthesis of phase-pure SrZn2P2 thin films using radio-frequency co-sputtering in a PH3 + Ar atmosphere and investigate the impact of post-growth processing on their structural and optical properties. Grazing-incidence X-ray scattering and Raman spectroscopy confirm the formation of crystalline SrZn2P2 films over a finite compositional window. Optical measurements reveal strong absorption near the direct-band-gap energy (~1.8 eV) and near-band-edge photoluminescence. Further, we have studied the effects of chemically compatible halide-assisted annealing. It is found that SrI2 treatments lead to pronounced grain growth and reduced diffraction peak broadening while preserving phase purity, in contrast to rapid thermal or forming-gas annealing. Notably, annealing with SrI2 at 450 °C significantly enhances both the intensity and spatial uniformity of the photoluminescence, thus connecting the observed microstructural consolidation with improved radiative recombination. Our study demonstrates that halide-assisted annealing provides an effective pathway for microstructural control in SrZn2P2 thin films and highlights a generalizable processing strategy for advancing Zintl phosphide semiconductors toward optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2026

Long photoexcited carrier lifetime in a stable and earth-abundant zinc polyphosphide

Halide perovskites have revolutionized optoelectronics by demonstrating that long carrier lifetime can be achieved in materials processed in relatively uncontrolled environments, whereas conventional inorganic semiconductors typically suffer from short carrier lifetime unless very carefully prepared and postprocessed. Here, we report the discovery of exceptionally long photoexcited carrier lifetime in monoclinic ZnP2, effectively bridging the carrier lifetime gap between direct-gap inorganic semiconductors and halide perovskites. Through computational screening, ZnP2 is identified as a long carrier lifetime semiconductor characterized by an unconventional polyphosphide bonding, combining covalently bonded phosphorus chains and polar-covalent Zn-P tetrahedra. Experimentally, ZnP2 crystals synthesized from low-purity precursors exhibit bright band-to-band photoluminescence at 1.49 eV and carrier lifetimes of up to 1 $μ$s. Further analysis reveals that the polyphosphide bonding of ZnP2 suppresses the formation of deep intrinsic defects, making it defect resistant. Combined with its remarkable environmental stability, ZnP2 presents a highly promising material for solar absorbers and light emitters. Our work illustrates that underexplored inorganic materials spaces with unusual chemical bonding hold great promise for discovering novel optoelectronic materials.

cond-mat.mtrl-sci↗

arXiv2026

Thin-Film Stabilization and Magnetism of η-Carbide Type Iron Nitrides

Transition-metal nitrides in η-carbide type structures exhibit unusual bonding motifs and proximity to magnetic instabilities. Yet they remain unexplored in thin-film form due to the difficulty of stabilizing nitrogen-poor ternaries among competing phases. Here, we report the thin-film synthesis and phase-stability mapping of the η-nitride systems Fe-W-N and Fe-Mo-N. Amorphous Fe-M-N (M = W, Mo) combinatorial libraries deposited by reactive co-sputtering crystallize upon rapid thermal annealing, enabling systematic identification of synthesis windows as a function of composition and annealing temperature. Using laboratory powder X-ray diffraction and synchrotron grazing incidence wide angle X-ray scattering, we establish that Fe3Mo3N-based η-carbide phases form over a substantially broader compositional and thermal range than W-based compositions, where η structures are stabilized only when the films are Fe-rich. These trends are rationalized using mixed chemical-potential vs. composition phase diagrams that capture the narrow nitrogen chemical-potential stability of η-nitrides. Magnetic measurements reveal that ferromagnetism is induced in Fe-rich Fe3.54Mo2.46N with a small exchange-bias-like response that is absent in Fe3W3N-based compositions, highlighting the sensitivity of magnetic behavior to modest deviations from stoichiometry. This work establishes practical thin-film synthesis routes for η-nitride materials and demonstrates how composition can be tuned to access emergent magnetic phenomena in these complex nitrides.

cond-mat.mtrl-sci↗

arXiv2026

Fabrication and Structural Analysis of Trilayers for Tantalum Josephson Junctions with Ta$_2$O$_5$ Barriers

Tantalum (Ta) has emerged as a promising low-loss material, enabling record coherence times in superconducting qubits. This enhanced performance is largely attributed to its stable native oxide, which may host fewer two-level system (TLS) defects, which are the key contributors to decoherence in superconducting circuits. Nevertheless, aluminum oxide remains the predominant choice for Josephson junction (JJ) barriers in most qubit architectures. Here, we investigate techniques for forming high-quality oxide layers on $α$-phase tantalum films to develop tantalum-oxide JJ barriers. We explore thermal oxidation in a tube furnace, rapid thermal annealing, and plasma oxidation of both room-temperature and heated Ta films, characterize the resulting structures using X-ray techniques and electron microscopy, and propose a mechanistic picture of the oxidation pathways. We find that plasma oxidation provides the smoothest Ta$_2$O$_5$ layers, is compatible with in situ Ta deposition, and offers thickness control through the annealing temperature, advantageous for JJ fabrication. Lastly, we evaluate methods for growing Ta/TaO$_x$/Ta trilayers. All trilayers showed c-axis-oriented columnar growth of the bottom Ta layer, with sapphire substrates producing larger, better-aligned grains yet higher dislocation densities than silicon. Nucleation of c-axis-oriented $α$-Ta on tantalum-oxide required an Nb seed layer, as direct Ta deposition yielded amorphous Ta. These results demonstrate the feasibility of $α$-Ta/Nb/TaO$_x$/$α$-Ta stacks for JJs with clean interfaces.

cond-mat.supr-con↗

arXiv2025

Ferrimagnetic Order in Tetragonal Antiperovskite Mn$_3$GeN

The crystal and magnetic structures of the nitride antiperovskite Mn$_3$GeN reveals ferrimagnetic order stemming from a distorted kagome-derived lattice of the Mn atoms. Polycrystalline Mn$_3$GeN was synthesized via a solid-state reaction and characterized using neutron powder diffraction, DC magnetometry, and first-principles calculations. Rietveld refinement reveals near-stoichiometric composition (Mn$_3$GeN$_{0.94(1)}$) adopting a tetragonal $I4/mcm$ structure at $T$ = 500 K and below, featuring axially distorted and tilted [NMn$_6$] octahedra that result in a buckled Mn kagome lattice. On heating, the tetragonal distortion and octahedral tilt angle decrease continuously before transitioning to the cubic $Pm\bar{3}m$ antiperovskite phase at $T \approx$ 524 K. Neutron diffraction and magnetometry together reveal noncollinear ferrimagnetic ordering. For 30 K $\le T \le$ 500 K, the magnetic structure is described by a single propagation vector, $k$ = (0, 0, 0), with inequivalent Mn1 and Mn2 sublattices that couple antiferromagnetically to yield a net moment. Density functional theory-based calculations show the different local moments originate from the bandwidths associated with the distinct Mn-N bond lengths. The temperature dependence of the sublattice moments indicates a compensation-like crossover between Mn1- and Mn2-derived magnetization near 380 K. These findings uncover a previously unrecognized subtlety in the magnetic and structural behavior of Mn$_3$GeN, highlighting the interplay between structural distortions, magnetic ordering, and electronic structure in kagome-derived antiperovskite materials.

cond-mat.mtrl-sci↗

arXiv2025

Structural stability, elemental ordering, and transport properties of layered ScTaN2

Some ternary TM nitrides are predicted to adopt layered structures that make them interesting for thermoelectric conversion and quantum materials applications. Synthesis of TM ternary nitride films by physical vapor deposition often favors disordered 3D structures rather than the predicted 2D-like layered structure. In this study, we investigate the structural interplay in the Sc-Ta-N material system, focusing on ScTaN2. We use a two-step combinatorial approach to deposit Sc-Ta-N films by RF co-sputtering and then process the resulting 3D-structured precursor with RTA. Synchrotron GIWAXS on films annealed at 1200 °C for 20 min reveals the nucleation of the layered structure (P63/mmc) within a composition window of x = Sc/(Sc+Ta) = 0.2-0.5. We estimate the long-range order parameter in stoichiometric ScTaN2 films to be 0.86, corresponding to a fraction of antisites of 7%. Interestingly, we find that the structure can accommodate large off-stoichiometry in the Ta-rich region (x < 0.5), facilitated by making an alloy with the nearly isostructural Ta5N6 compound that exists on a composition tie-line. Transport measurements on ScTaN2 reveal a nearly temperature-independent high carrier density (1021 cm-3), suggesting a heavily doped semiconductor or semimetallic character. The carrier mobility is relatively small (9.5 cm2V-1s-1 at 2 K) and the residual-resistivity ratio is small, suggesting that electrical conduction is dominated by defects or disorder. Measured magnetoresistance is indicative of weak antilocalization at low temperatures. We highlight the interplay between ScTaN2 and Ta5N6 in stabilizing layered structures, emphasizes the importance of cation order/disorder for potential tunable alloys, and suggests that ScTaN2 is promising platform for exploring electronic properties in a tie line of stoichiometry.

cond-mat.mtrl-sci↗

arXiv2024

Synthesis pathways to thin films of stable layered nitrides

Controlled synthesis of metastable materials away from equilibrium is of interest in materials chemistry. Thin film deposition methods with rapid condensation of vapor precursors can readily synthesize metastable phases, but often struggle to yield the thermodynamic ground state. Growing thermodynamically-stable structures using kinetically-limited synthesis methods in important for practical applications in electronics and energy conversion. Here, we reveal a synthesis pathway to thermodynamically-stable ordered layered ternary nitride materials, and discuss why disordered metastable intermediate phases tend to form. We show that starting from elemental vapor precursors leads to a 3D long-range disordered MgMoN2 thin film metastable intermediate structure, with a layered short-range order that has a low-energy transformation barrier to the layered 2D-like stable structure. This synthesis approach is extended to ScTaN2, MgWN2 and MgTa2N3, and may lead to the synthesis of other layered nitride thin films with unique semiconducting and quantum properties.

cond-mat.mtrl-sci↗

arXiv2024

Low-Temperature Synthesis of Stable CaZn$_2$P$_2$ Zintl Phosphide Thin Films as Candidate Top Absorbers

The development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with band gaps in the range of ~1.5-2.3 eV, for use in the top cell paired with a narrower-gap bottom cell. An outstanding challenge is finding materials with suitable optoelectronic and defect properties, good operational stability, and synthesis conditions that preserve underlying device layers. This study demonstrates the Zintl phosphide compound CaZn$_2$P$_2$ as a compelling candidate semiconductor for these applications. We prepare phase pure, 500 nm-thick CaZn$_2$P$_2$ thin films using a scalable reactive sputter deposition process at growth temperatures as low as 100 °C, which is desirable for device integration. UV-vis spectroscopy shows that CaZn$_2$P$_2$ films exhibit an optical absorptivity of ~10$^4$ cm$^-$$^1$ at ~1.95 eV direct band gap. Room-temperature photoluminescence (PL) measurements show near-band-edge optical emission, and time-resolved microwave conductivity (TRMC) measurements indicate a photoexcited carrier lifetime of ~30 ns. CaZn$_2$P$_2$ is highly stable in both ambient conditions and moisture, as evidenced by PL and TRMC measurements. Experimental data are supported by first-principles calculations, which indicate the absence of low-formation-energy, deep intrinsic defects. Overall, our study should motivate future work integrating this potential top cell absorber material into tandem solar cells.

cond-mat.mtrl-sci↗

arXiv2024

GdWN$_3$ is a Nitride Perovskite

Nitride perovskites $AB$N$_3$ are an emerging and highly under-explored class of materials that are of interest due to their intriguing calculated ferroelectric, optoelectronic, and other functional properties. Incorporating novel $A$-site cations is one strategy to tune and expand such properties; for example, Gd$^{3+}$ is compelling due to its large magnetic moment, potentially leading to multiferroic behavior. However, the theoretically predicted ground state of GdWN$_3$ is a non-perovskite monoclinic structure. Here, we experimentally show that GdWN$_3$ crystallizes in a perovskite structure. High-throughput combinatorial sputtering with activated nitrogen is employed to synthesize thin films of Gd$_{1-x}$W$_{x}$N$_{3-y}$ with low oxygen content within the bulk of the films. Ex-situ annealing crystallizes a polycrystalline perovskite phase in a narrow composition window near $x=1$. LeBail fits of synchrotron grazing incidence wide angle X-ray scattering data are consistent with a perovskite ground-state structure. New density functional theory calculations that included antiferromagnetic configurations confirm that the ground-state structure of GdWN$_3$ is a distorted $Pnma$ perovskite with antiferromagnetic ordering, in contrast to prior predictions. Initial property measurements find that GdWN$_3$ is paramagnetic down to $T=2$ K with antiferromagnetic correlations and that the absorption onset depends on cation stoichiometry. This work provides an important stepping stone towards the rapid expansion of the emerging family of nitride perovskites and towards our understanding of their potential multiferroic properties.

cond-mat.mtrl-sci↗

arXiv2023

Autonomous sputter synthesis of thin film nitrides with composition controlled by Bayesian optimization of optical plasma emission

Autonomous experimentation has emerged as an efficient approach to accelerate the pace of materials discovery. Although instruments for autonomous synthesis have become popular in molecular and polymer science, solution processing of hybrid materials and nanoparticles, examples of autonomous tools for physical vapor deposition are scarce yet important for the semiconductor industry. Here, we report the design and implementation of an autonomous workflow for sputter deposition of thin films with controlled composition, leveraging a highly automated sputtering reactor custom-controlled by Python, optical emission spectroscopy (OES), and a Bayesian optimization algorithm. We modeled film composition, measured by x-ray fluorescence, as a linear function of emission lines monitored during the co-sputtering from elemental Zn and Ti targets in N$_2$ atmosphere. A Bayesian control algorithm, informed by OES, navigates the space of sputtering power to fabricate films with user-defined composition, by minimizing the absolute error between desired and measured emission signals. We validated our approach by autonomously fabricating Zn$_x$Ti$_{1-x}$N$_y$ films with deviations from the targeted cation composition within relative 3.5 %, even for 15 nm thin films, demonstrating that the proposed approach can reliably synthesize thin films with specific composition and minimal human interference. Moreover, the proposed method can be extended to more difficult synthesis experiments where plasma intensity depends non-linearly on pressure, or the elemental sticking coefficients strongly depend on the substrate temperature.

physics.app-ph↗

arXiv2023

Bulk and film synthesis pathways to ternary magnesium tungsten nitrides

Bulk solid state synthesis of nitride materials usually leads to thermodynamically stable, cation-ordered crystal structures, whereas thin film synthesis tends to favor disordered, metastable phases. This dichotomy is inconvenient both for basic materials discovery, where non-equilibrium thin film synthesis methods can be useful to overcome reaction kinetic barriers, and for practical technology applications where stable ground state structures are sometimes required. Here, we explore the uncharted Mg-W-N chemical phase space, using rapid thermal annealing to reconcile the differences between thin film and bulk powder syntheses. Combinatorial co-sputtering synthesis from Mg and W targets in a N$_2$ environment yielded cation-disordered Mg-W-N phases in the rocksalt (0.1< Mg/(Mg+W) <0.9), and hexagonal boron nitride (0.7< Mg/(Mg+W) <0.9) structure types. In contrast, bulk synthesis produced a cation-ordered polymorph of MgWN$_2$ that consists of alternating layers of rocksalt-like [MgN$_6$] octahedra and nickeline-like [WN$_6$] trigonal prisms (denoted "rocksaline"). Thermodynamic calculations corroborate these observations, showing rocksaline MgWN$_2$ is stable while other polymorphs are metastable. We also show that rapid thermal annealing can convert disordered rocksalt films to this cation-ordered polymorph near the MgWN$_2$ stoichiometry. Electronic structure calculations suggest that this rocksalt-to-rocksaline structural transformation should also drive a metallic-to-semiconductor transformation. In addition to revealing three new phases (rocksalt MgWN$_2$ and Mg$_3$WN$_4$, hexagonal boron nitride Mg$_3$WN$_4$, and rocksaline MgWN$_2$), these findings highlight how rapid thermal annealing can control polymorphic transformations, adding a new strategy for exploration of thermodynamic stability in uncharted phase spaces.

cond-mat.mtrl-sci↗

arXiv2023

Structural and Optoelectronic Properties of Thin Film LaWN$_3$

Nitride perovskites are an emerging class of materials that have been predicted to display a range of interesting physics and functional properties, but they are under-explored due to the difficulty of synthesizing oxygen-free nitrides. LaWN3, recently reported as the first oxygen-free nitride perovskite, exhibited polar symmetry and a large piezoelectric coefficient. However, the predicted ferroelectric switching was hindered by large leakage current, which motivates better understanding of its electronic structure and optical properties. Here, we study the structure and optoelectronic properties of thin film LaWN3 in greater detail, employing combinatorial techniques to correlate these properties with cation stoichiometry. We report a two-step synthesis that utilizes a more common RF substrate bias instead of a nitrogen plasma source, yielding nanocrystalline films that are crystallized by ex-situ annealing. We investigate the structure and composition of these films, finding polycrystalline La-rich and highly textured W-rich films. The optical absorption onset and temperature- and magnetic field-dependent resistivity are consistent with semiconducting behavior and are highly sensitive to cation stoichiometry, which may be related to amorphous impurities: metallic W or WNx in W-rich samples and insulating La2O3 in La-rich samples. The fractional magnetoresistance is linear and small, consistent with defect scattering, and a W-rich sample has n-type carriers with high densities and low mobilities. We demonstrate a photoresponse in LaWN3: the resistivity of a La-rich sample is enhanced by 28% at low temperature, likely due to a defect trapping mechanism. The physical properties of LaWN3 are highly sensitive to cation stoichiometry, like many oxide perovskites, which therefore calls for precise composition control to utilize the interesting properties observed in this nitride perovskite.

cond-mat.mtrl-sci↗

arXiv2022

Combinatorial synthesis of cation-disordered manganese tin nitride MnSnN$_2$ thin films with magnetic and semiconducting properties

Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational prediction and realization of a new magnetic and semiconducting material, MnSnN$_2$, via combinatorial sputtering of thin films. Grazing incidence wide angle X-ray scattering and laboratory X-ray diffraction studies show a wide composition tolerance for this wurtzite-like MnSnN$_2$, ranging from $20\% <$ Mn/(Mn+Sn) $< 65$\% with cation disorder across this composition space. Magnetic susceptibility measurements reveal a low-temperature transition ($T^{\mathrm{*}} \approx 10$ K) for MnSnN$_2$ and strong antiferromagnetic correlations, although the ordering below this transition may be complex. This finding contrasts with bulk MnSiN$_2$ and MnGeN$_2$, which exhibited antiferromagnetic ordering above 400 K in previous studies. Spectroscopic ellipsometry identifies an optical absorption onset of 1 eV for the experimentally-synthesized phase exhibiting cation disorder, consistent with the computationally-predicted 1.2 eV bandgap for the cation-ordered structure. Electronic conductivity measurements confirm the semiconducting nature of this new phase by showing increasing conductivity with increasing temperature. This work adds to the set of known semiconductors that are paramagnetic at room temperature and will help guide future work targeted at controlling the structure and properties of semiconducting materials that exhibit magnetic behavior.

cond-mat.mtrl-sci↗

arXiv2021

n-type electrical conduction in SnS thin films

Tin monosulfide (SnS) usually exhibits p-type conduction due to the low formation enthalpy of acceptor-type defects, and as a result n-type SnS thin films have never been obtained. This study realizes n-type conduction in SnS thin films for the first time by using RF-magnetron sputtering with Cl doping and sulfur plasma source during deposition. N-type SnS thin films are obtained at all the substrate temperatures employed in this study (221-341 C), exhibiting carrier concentrations and Hall mobilities of ~2 x 10 18 cm-3 and 0.1-1 cm V-1s-1, respectively. The films prepared without sulfur plasma source, on the other hand, exhibit p-type conduction despite containing a comparable amount of Cl donors. This is likely due to a significant amount of acceptor-type defects originating from sulfur deficiency in p-type films, which appears as a broad optical absorption within the band gap. The demonstration of n-type SnS thin films in this study is a breakthrough for the realization of SnS homojunction solar cells, which are expected to have a higher conversion efficiency than the conventional heterojunction SnS solar cells.

cond-mat.mtrl-sci↗

arXiv2021

Boron phosphide films by reactive sputtering: Searching for a p-type transparent conductor

With an indirect band gap in the visible and a direct band gap at a much higher energy, boron phosphide (BP) holds promise as an unconventional p-type transparent conductor. Previous experimental reports deal almost exclusively with epitaxial, nominally undoped BP films by chemical vapor deposition. High hole concentrations were often observed, but it is unclear if native defects alone can be responsible for it. Besides, the feasibility of alternative deposition techniques has not been clarified and optical characterization is generally lacking. In this work, we demonstrate reactive sputtering of amorphous BP films, their partial crystallization in a P-containing annealing atmosphere, and extrinsic doping by C and Si. We obtain the highest hole concentration reported to date for p-type BP ($5 \times 10^{20}$ cm$^{-3}$) using C doping under B-rich conditions. We also confirm that bipolar doping is possible in BP. An anneal temperature of at least 1000 $^\circ$C is necessary for crystallization and dopant activation. Hole mobilities are low and indirect optical transitions are much stronger than predicted by theory. Low crystalline quality probably plays a role in both cases. High figures of merit for transparent conductors might be achievable in extrinsically doped BP films with improved crystalline quality.

cond-mat.mtrl-sci↗

arXiv2020

Synthesis of tunable $SnS-TaS_2$ nanoscale superlattices

Nanoscale superlattices represent a compelling platform for designed materials as the specific identity and spatial arrangement of constituent layers can lead to tunable properties. A number of kinetically-stabilized layered chalcogenide nanocomposites have taken inspiration from misfit compounds, a thermodynamically stable class of materials formed of van der Waals-bonded (vdW) layers. This class of vdW heterostructure superlattices have been reported in telluride and selenide chemistries, but have not yet been extended to sulfides. Here we present $SnS-TaS_2$ nanoscale superlattices with tunable layer architecture. Thin films are prepared from layered amorphous precursors and deposited to mimic the targeted superlattice; subsequent low temperature annealing activates self-assembly into designed nanocomposites. Structure and composition for materials are investigated that span stacking sequences between $[(SnS)_{1+δ}]_3(TaS_2)_1$ and $(SnS)_7(TaS_2)_1$ using x-ray diffraction, x-ray fluorescence, and transmission electron microscopy. A graded deposition approach is implemented to stabilize heterostructures of multiple stacking sequences with a single preparation. Precise control over the architecture of such nanoscale superlattices is a critical path towards controlling the properties of quantum materials and constituent devices.

cond-mat.mtrl-sci↗

arXiv2019

COMBIgor: data analysis package for combinatorial materials science

Combinatorial experiments involve synthesis of sample libraries with lateral composition gradients requiring spatially-resolved characterization of structure and properties. Due to maturation of combinatorial methods and their successful application in many fields, the modern combinatorial laboratory produces diverse and complex data sets requiring advanced analysis and visualization techniques. In order to utilize these large data sets to uncover new knowledge, the combinatorial scientist must engage in data science. For data science tasks, most laboratories adopt common-purpose data management and visualization software. However, processing and cross-correlating data from various measurement tools is no small task for such generic programs. Here we describe COMBIgor, a purpose-built open-source software package written in the commercial Igor Pro environment, designed to offer a systematic approach to loading, storing, processing, and visualizing combinatorial data sets. It includes (1) methods for loading and storing data sets from combinatorial libraries, (2) routines for streamlined data processing, and (3) data analysis and visualization features to construct figures. Most importantly, COMBIgor is designed to be easily customized by a laboratory, group, or individual in order to integrate additional instruments and data-processing algorithms. Utilizing the capabilities of COMBIgor can significantly reduce the burden of data management on the combinatorial scientist.

cond-mat.mtrl-sci↗

arXiv2018

Ternary Nitride Semiconductors in the Rocksalt Crystal Structure

Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optoelectronic devices. In contrast, rocksalt-based nitrides are known for their metallic and refractory properties. Breaking this dichotomy, here we report on ternary nitride semiconductors with rocksalt crystal structures, remarkable optoelectronic properties, and the general chemical formula Mg$_{x}$TM$_{1-x}$N (TM=Ti, Zr, Hf, Nb). These compounds form over a broad metal composition range and our experiments show that Mg-rich compositions are nondegenerate semiconductors with visible-range optical absorption onsets (1.8-2.1 eV). Lattice parameters are compatible with growth on a variety of substrates, and epitaxially grown MgZrN$_{2}$ exhibits remarkable electron mobilities approaching 100 cm$^{2}$V$^{-1}$s$^{-1}$. Ab initio calculations reveal that these compounds have disorder-tunable optical properties, large dielectric constants and low carrier effective masses that are insensitive to disorder. Overall, these experimental and theoretical results highlight Mg$_{G-3}$TMN$_{G-2}$ rocksalts as a new class of semiconductor materials with promising properties for optoelectronic applications.

cond-mat.mtrl-sci↗