arXiv subjects

Sahng-Kyoon Jerng

Publications and source records attributed to Sahng-Kyoon Jerng.

3 recordsLinked to original sources

arXiv2026

Observation of Macroscopic Nonlocal Voltage at Room Temperature

Electrons in conductors suffer frequent scatterings with defects and phonons, and the diffusive macroscopic behaviors are determined by an external electric field through Ohms law. If electrons are no longer diffusive, the Ohmic description collapses. In devices composed of thin chalcogenides and YBa2Cu3O7, we observe a transition from an Ohmic conductor to a nonlocal conductor below a certain temperature. The nonlocal conductor is characterized by significant nonlocal voltages (~0.1 V) across macroscopic regions (~1 mm) that are conventionally considered to be equipotential. Nonlinear responses are an additional characteristic. Negative local resistances in a vicinal geometry support macroscopic hydrodynamic flow as the underlying mechanism, implying electron momentum conservation over incredibly long distances. This new conduction state, observable at room temperature, opens the field of nonlocal electronics and low-dissipation applications.

cond-mat.str-el↗

arXiv2013

Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE

Topological insulators (TIs) are exotic materials which have topologically protected states on the surface due to the strong spin-orbit coupling. However, a lack of ordered growth of TI thin films on amorphous dielectrics and/or insulators presents a challenge for applications of TI-junctions. We report the growth of topological insulator Bi2Se3 thin films on amorphous SiO2 by molecular beam epitaxy (MBE). To achieve the ordered growth of Bi2Se3 on amorphous surface, the formation of other phases at the interface is suppressed by Se passivation. Structural characterizations reveal that Bi2Se3 films are grown along the [001] direction with a good periodicity by van der Waals epitaxy mechanism. Weak anti-localization effect of Bi2Se3 films grown on amorphous SiO2 shows modulated electrical property by the gating response. Our approach for ordered growth of Bi2Se3 on amorphous dielectric surface presents considerable advantages for TI-junctions with amorphous insulator or dielectric thin films.

cond-mat.mtrl-sci↗

arXiv2013

Methane as an effective hydrogen source for single-layer graphene synthesis on Cu foil by plasma enhanced chemical vapor deposition

A single-layer graphene is synthesized on Cu foil in the absence of H2 flow by plasma enhanced chemical vapor deposition (PECVD). In lieu of an explicit H2 flow, hydrogen species are produced during methane decomposition process into their active species (CHx<4), assisted by the plasma. Notably, the early stage of growth depends strongly on the plasma power. The resulting grain size (the nucleation density) has a maximum (minimum) at 50 W and saturates when the plasma power is higher than 120 W because hydrogen partial pressures are effectively tuned by a simple control of the plasma power. Raman spectroscopy and transport measurements show that decomposed methane alone can provide sufficient amount of hydrogen species for high-quality graphene synthesis by PECVD.

cond-mat.mes-hall↗