arXiv subjects

Sai Abhishikth Dhurjati

Publications and source records attributed to Sai Abhishikth Dhurjati.

3 recordsLinked to original sources

arXiv2026

Deterministic positioning of circular Bragg gratings using atomic force lithography for high-performance quantum dot light sources

Semiconductor quantum dots (QDs) grown by molecular beam epitaxy are excellent quantum emitters, but their random spatial distribution hinders deterministic coupling to optical microcavities. We demonstrate a room-temperature atomic force microscopy (AFM)-assisted nano-oxidation lithography technique enabling QD positioning with a radial displacement of $51(28)$ nm. Free-standing asymmetric circular Bragg gratings incorporating AFM-positioned GaAs QDs exhibit a $245$-fold photoluminescence enhancement and fine-structure splitting (FSS) comparable to bulk QDs. Polarization-resolved spectroscopy and finite-difference time-domain simulations show robust emission for displacements up to $50$ nm (Stokes parameter $\lvert S \rvert < 0.05$ ). The devices display stable FSS and polarization imbalance below $5 \, \%$ , confirming precise, reproducible alignment and potential for high fidelity devices. This scalable approach enables deterministic integration of high-performance QDs with photonic cavities, advancing practical quantum light sources for quantum information technologies.

cond-mat.mtrl-sci↗

arXiv2026

Free-standing circular Bragg gratings enabling efficient GaAs quantum dot entangled photon pair sources

Deterministic and bright quantum light sources based on scalable semiconductor technologies are a crucial building block for future quantum communication networks. While circular Bragg gratings (CBGs) are highly effective for extracting light from solid-state quantum emitters, conventional architectures rely on complex multi-layer processing or flip-chip bonding, which introduce detrimental strain and limit scalability. Here, we present a fabrication-minimal approach to realize monolithic, free-standing CBG cavities with deterministically positioned single GaAs quantum dots (QDs). By utilizing aspect-ratio-dependent etching (ARDE) in a single-step top-down process, we achieve the necessary vertical structural asymmetry for directional emission without requiring bottom reflectors. Finite-difference time-domain (FDTD) simulations validate this geometry, predicting free-space extraction efficiencies up to $68 \, \%$ and coupling efficiencies of $40 \, \%$ into a lensed single-mode fiber ($\text{NA} = 0.6$). Experimentally, the deterministically coupled QD-CBG devices yield a photoluminescence intensity enhancement of up to $\times 700$ compared to unprocessed planar QDs, reaching integrated count rates of $45 \, MHz$. Furthermore, the suspended membrane architecture effectively relaxes residual strain, significantly reducing the average exciton fine-structure splitting from $7.3 \, μeV$ in planar QDs to $1.3 \, μeV$ in the CBGs. Interferometric measurements confirm that the fabrication process preserves the optical quality of the emitters, with average coherence times of $70 \, ps$. By bridging optimized FDTD design with precise nanofabrication and robust optical performance, these results establish free-standing GaAs CBGs as a highly scalable platform for bright and coherent entangled photon pair sources.

physics.optics↗

arXiv2025

Temperature-dependent refractive index of AlGaAs for quantum-photonic devices near the bandgap

We present an experimental method to determine the refractive index of $Al_{x}Ga_{1-x}As$ (x = 0.0 - 0.5) from 300 K to 4 K across the 500 - 1100 nm wavelength range. The values are extracted from spectroscopically observed microcavity resonances in thin $Al_{x}Ga_{1-x}As$ membranes embedded between fully and partially reflective gold mirrors. Refined Varshni and Paessler models are used to describe temperature-dependent bandgap shifts and material composition. By tracking resonance shifts and benchmarking against finite-difference time-domain simulations, we derive the dispersive optical response with high precision. This yields a quantitatively improved analytical expression for the refractive index of $Al_{x}Ga_{1-x}As$ matching the experimental results with a coefficient of determination as high as $R^2=0.993$, enabling accurate modeling near the band edge at cryogenic temperatures. The method is straightforward and broadly applicable to other semiconductor systems, offering a valuable tool for the design of micro photonic devices such as quantum light sources.

physics.optics↗