Sai Krishna Narayanan

arXiv2026

Hidden in Plain Sight: Aromaticity of Hexagonal Boron Nitride

Hexagonal boron nitride (hBN) and graphene are similar in many ways - they are isoelectronic, have the same structure, are chemically inert and show persistence. All of these properties are indicators of a deeper connection that has, thus far, been overlooked. Unlike graphene, which has been shown to be aromatic, it is not known if hBN is aromatic. In this density functional theory-based work, we investigate the aromaticity (or lack thereof ) of hBN. By employing the magnetic criterion, supported by group theoretic and energetic considerations, we show that hexagonal boron nitride is indeed aromatic, even if weakly so, as compared to graphene. Since aromaticity is used to understand physical and chemical properties of planar compounds, the picture developed in this work is important to bridging the gap between the physical and chemical understanding of hBN's properties.

cond-mat.mtrl-sci↗

arXiv2026

Robust Aluminum Nitride Passivation of Silicon Carbide with Near-Surface Quantum Emitters for Quantum Computing and Sensing Applications

Silicon carbide (SiC) hosts a number of point defects that are being explored as single-photon emitters for quantum applications. Unfortunately, these quantum emitters lose their photostability when placed in proximity to the surface of the host semiconductor. In principle, a uniform passivation of the surface's dangling bonds by simple adsorbates, such as hydrogen or mixed hydrogen/hydroxyl groups, should remove detrimental surface effects. However, the usefulness of atomic and molecular passivation schemes is limited by their lack of long-term chemical and/or thermal stability. In this first principles work, we use aluminum nitride (AlN) to passivate SiC surfaces in a core-shell nanowire model. By using a negatively charged silicon vacancy in SiC as the proof-of-principle quantum emitter, we show that AlN-passivation is effective in removing SiC surface states from the band gap and in restoring the defect's optical properties. We also report the existence of a silicon vacancy-based defect at the SiC-AlN interface, which displays distinct spin and optical properties as compared to the other well-studied defects in SiC.

cond-mat.mtrl-sci↗