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Sai Lyu

Publications and source records attributed to Sai Lyu.

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Contrasting roles of the superexchange and direct exchange interactions in the metal-insulator transitions of the 2D ferromagnetic $1T$-Fe$X_2$ ($X$=Cl, Br, I) monolayers

Within the rapidly growing family of two-dimensional (2D) materials, 2D ferromagnetic (FM) materials have attracted a great deal of recent attention. The ferromagnetism in 2D FM materials originates from the underlying exchange interactions. In particular, metal-insulator transitions (MITs) in 2D FM materials induced via various modulation strategies is critical to the design of 2D electronic devices with reduced sizes (e.g. transistor). However, the critical behaviors of exchange interactions and their effects on the Curie temperatures near MITs remains to be clarified. By taking the 2D FM 1T-FeX2 (X=Cl, Br, I) monolayers as the testbeds, we computationally study the critical behaviors of the exchange interactions in the vicinity of the MITs driven by the on-site Coulomb electron-electon interactions. The FM superexchange interactions and the direct exchange interactions are found to energetically favor the halfmetallic and semiconducting states, respectively. In addition, the halfmetallic states have the stronger FM couplings and thus the higher Curie temperatures. This study provides a comprehensive understanding of the interrelations between MITs and exchange interactions and could be useful for the device design requiring both MITs and exchange-interaction related magnetic properties, particularly robust magnetic ordering and higher Curie temperatures, in 2D FM materials.

cond-mat.mtrl-sci

Band offsets at the interfaces between $β$-Ga$_2$O$_3$ and Al$_2$O$_3$

The band offsets and the chemical bonding at the interfaces between (-201) $β$-Ga$_2$O$_3$ and Al$_2$O$_3$ polymorphs are studied through hybrid functional calculations. For alumina, we consider four representative phases, i.e., $α$, $κ$, $θ$ and $γ$-Al$_2$O$_3$. We generate realistic slab models for the interfaces which satisfy electron counting rules. The O atoms bridge the $β$-Ga$_2$O$_3$ and Al$_2$O$_3$ slabs and all the dangling bonds are saturated. The band offsets are obtained by applying an alignment scheme which requires separate bulk and interface calculations. The calculated band offsets are useful for the design of devices based on the $β$-Ga$_2$O$_3$/Al$_2$O$_3$heterojunctions, particularly $β$-Ga$_2$O$_3$ metal-oxide semiconductor field effect transistors.

cond-mat.mtrl-sci

Quasiparticle self-consistent $GW$ band structures of Mg-IV-N$_2$ compounds: the role of semicore $d$ states

We present improved band structure calculations of the Mg-IV-N$_2$ compounds in the quasiparticle self-consistent $GW$ approximation. Compared to previous calculations (Phys. Rev. B 94, 125201 (2016)) we here include the effects of the Ge-3$d$ and Sn-4$d$ semicore states and find that these tend to reduce the band gap significantly. This places the band gap of MgSnN$_2$ in the difficult to reach green region of the visible spectrum. The stability of the materials with respect to competing binary compounds is also evaluated and details of the valence band maximum manifold splitting and effective masses are provided.

cond-mat.mtrl-sci

Quasiparticle self-consistent $GW$ electronic band structures of Be-IV-N$_2$ compounds

The electronic band structures of BeSiN$_2$ and BeGeN$_2$ compounds are calculated using the quasiparticle self-consistent $GW$ method. The lattice parameters are calculated for the wurtzite based crystal structure commonly found in other II-IV-N$_2$ compounds with the $Pbn$2$_1$ space group. They are determined both in the local density approximation (LDA) and generalized gradient approximation (GGA), which provide lower and upper limits. At the GGA lattice constants, which gives lattice constants closer to the experimental ones, BeSiN$_2$ is found to have an indirect band gap of 6.88 eV and its direct gap at $Γ$ is 7.77 eV, while in BeGeN$_2$ the gap is direct at $Γ$ and equals 5.03 eV. To explain the indirect gap in BeSiN$_2$, comparisons are made with the parent III-N compound w-BN band structure. The effective mass parameters are also evaluated and found to decrease from BeSiN$_2$ to BeGeN$_2$.

cond-mat.mtrl-sci