arXiv subjects

Sai Shradha

Publications and source records attributed to Sai Shradha.

10 recordsLinked to original sources

arXiv2026

Spatially-resolved multiphoton photoemission from a lateral transition metal dichalcogenide heterostructure

Transition metal dichalcogenides (TMDs) in their monolayer form offer a premier platform for next-generation optoelectronics, particularly through the local manipulation of their robust excitonic states using nanoscale electric fields. These localized states can be dynamically controlled through spatial structuring as well as through ultrafast field modulations driven by tailored optical pulses. Characterizing the resulting rapid, nanoscale charge carrier dynamics requires a technique with exceptional spatial and temporal resolution. Here, we report on the spatio-temporally resolved investigation of ground state and excited state photoemission from a lateral heterostructure built of monolayers of WSe$_2$ and MoSe$_2$ using few-cycle light pulses with a photon energy of 0.62 eV. We utilize photoemission electron microscopy to spatially resolve the highly nonlinear photoemission from the monolayer structure with few tens of nanometer resolution. By varying the laser pulse energy, we extract the nonlinearity of the photoemission process and thus the dynamic binding energy of the photoelectrons before and after optical excitation with high spatial and temporal resolution.

physics.optics↗

arXiv2026

Probing Nonlinear Interactions of Dipolar Interlayer Excitons in MoSe$_2$/WSe$_2$ Heterobilayers

Interlayer excitons in transition-metal dichalcogenide heterobilayers possess intrinsic out-of-plane dipole moments, providing a platform for investigating exciton-exciton interactions at high densities. Here, we use excitation-energy-dependent photoluminescence excitation (PLE) spectroscopy to probe the nonlinear response of dipolar interlayer excitons in chemical vapor deposition-grown MoSe$_2$/WSe$_2$ heterobilayers. By tuning the excitation energy across intralayer exciton resonances at fixed excitation power, we selectively vary the population injected into the interlayer exciton states. Resonant excitation drives the system into a nonlinear regime, leading to saturation of the interlayer exciton photoluminescence and an apparent broadening of the intralayer $1s$ resonances in the PLE spectra. At the same time, the interlayer exciton emission exhibits a pronounced blueshift, reaching approximately 2.5 meV at 4 K and 1 meV at 75 K. The blueshift increases systematically with the interlayer exciton population and is consistent with a net repulsive exciton-exciton interaction, with contributions from dipole-dipole repulsion in the density regime investigated. Our results establish PLE as a sensitive approach for accessing the nonlinear, high-density regime of interlayer excitons and probing their interactions in van der Waals heterostructures.

cond-mat.mes-hall↗

arXiv2026

Detecting Magnetic Phase Transitions in Ion-Irradiated CrSBr Through Resonant Raman Scattering

Controlling magnetic phases and accurately determining their transition temperatures are essential for the development of low-dimensional magnetic materials. Here, we demonstrate that He$^+$ ion irradiation provides a versatile route for engineering magnetic phases in layered CrSBr and establish temperature-dependent polarization-resolved Raman spectroscopy as a sensitive optical probe for identifying irradiation-induced magnetic phase transitions. We reveal that the magnetic response of the modified CrSBr is governed by both irradiation dose and crystal thickness. The temperature evolution of the Raman tensor elements resolves the antiferromagnetic transition in pristine CrSBr at T$_N \approx 132$ K as well as irradiation-induced magnetic transitions at T$_C \approx 105-110$ K and T$_D \approx 40$ K corresponding to ferromagnetic and defect-related magnetic phase transitions. Complementary magneto-optical measurements confirm the progressive suppression of antiferromagnetic order and the emergence of new defect-engineered magnetic phases, including pure ferromagnetic behavior at high irradiation doses. These findings establish irradiated CrSBr as a platform for controllable magnetic phase engineering while demonstrating polarization-resolved Raman spectroscopy as a rapid, non-destructive, and broadly applicable method for probing magnetic phase transitions in van der Waals magnets.

cond-mat.mtrl-sci↗

arXiv2026

CVD Grown Hybrid MoSe$_2$-WSe$_2$ Lateral/Vertical Heterostructures with Strong Interlayer Exciton Emission

Lateral heterostructures of 2D transition metal dichalcogenide offer a powerful platform to investigate photonic and electronic phenomena at atomically sharp interfaces. However, their controlled engineering, including tuning lateral domain size and integration into vertical van der Waals heterostructures with other 2D materials, remains challenging. Here, we present a facile route for the synthesis of two types of heterostructures consisting of monolayers of MoSe$_2$ and WSe$_2$ - purely lateral (HS I) and hybrid lateral/vertical (HS II) - using liquid precursors of transition metal salts and chemical vapor deposition (CVD). Depending on the growth parameters, the heterostructure type and their lateral dimensions can be adjusted. We characterized properties of the HS I and HS II by complementary spectroscopic and microscopic techniques including Raman and photoluminescence spectroscopy, and optical and atomic force microscopy, and scanning electron and transmission electron microscopy. The photoluminescence measurements reveal strong interlayer exciton emission in the MoSe$_2$/WSe$_2$ region of HS II, which dominates the spectrum at 4 K and persisting up to room temperature. These results demonstrate high optical quality of the grown heterostructures which in combination with scalability of the developed approach paves the way for fundamental studies and device applications based on these unique 2D quantum materials.

cond-mat.mtrl-sci↗

arXiv2025

Interplay of vibrational, electronic, and magnetic states in CrSBr

The van der Waals antiferromagnet CrSBr exhibits coupling of vibrational, electronic, and magnetic degrees of freedom, giving rise to distinctive quasi-particle interactions. We investigate these interactions across a wide temperature range using polarization-resolved Raman spectroscopy at various excitation energies, complemented by optical absorption and photoluminescence excitation (PLE) spectroscopy. Under 1.96 eV excitation, we observe pronounced changes in the A$_g^1$, A$_g^2$, and A$_g^3$ Raman modes near the Néel temperature, coinciding with modifications in the oscillator strength of excitonic transitions and clear resonances in PLE. The distinct temperature evolution of Raman tensor elements and polarization anisotropy for Raman modes indicates that they couple to different excitonic and electronic states. The suppression of the excitonic state's oscillation strength above the Néel temperature could be related to the magnetic phase transition, thereby connecting these excitonic states and Raman modes to a specific spin alignment. These observations make CrSBr a versatile platform for probing quasi-particle interactions in low-dimensional magnets and provide insights for applications in quantum sensing and quantum communication.

cond-mat.mtrl-sci↗

arXiv2025

Impact of charge transfer excitons on unidirectional exciton transport in lateral TMD heterostructures

Lateral heterostructures built of monolayers of transition metal dichalcogenides (TMDs) are characterized by a thin 1D interface exhibiting a large energy offset. Recently, the formation of spatially separated charge-transfer (CT) excitons at the interface has been demonstrated. The technologically important exciton propagation across the interface and the impact of CT excitons has remained in the dark so far. In this work, we microscopically investigate the spatiotemporal exciton dynamics in the exemplary hBN-encapsulated WSe$_2$-MoSe$_2$ lateral heterostructure and reveal a highly interesting interplay of energy offset-driven unidirectional exciton drift across the interface and efficient capture into energetically lower CT excitons at the interface. This interplay triggers a counterintuitive thermal control of exciton transport with a less efficient propagation at lower temperatures - opposite to the behavior in conventional semiconductors. We predict clear signatures of this intriguing exciton propagation both in far- and near-field photoluminescence experiments. Our results present an important step toward a microscopic understanding of the technologically relevant unidirectional exciton transport in lateral heterostructures.

cond-mat.mes-hall↗

arXiv2024

Raman Polarization Switching in CrSBr

Semiconducting CrSBr is a layered A-type antiferromagnet, with individual layers antiferromagnetically coupled along the stacking direction. Due to its unique orthorhombic crystal structure, CrSBr exhibits highly anisotropic mechanical and optoelectronic properties acting itself as a quasi-1D material. CrSBr demonstrates complex coupling phenomena involving phonons, excitons, magnons, and polaritons. Here we show through polarization-resolved resonant Raman scattering the intricate interaction between the vibrational and electronic properties of CrSBr. For samples spanning from few-layer to bulk thickness, we observe that the polarization of the A$_g^2$ Raman mode can be rotated by 90 degrees, shifting from alignment with the crystallographic a (intermediate magnetic) axis to the b (easy magnetic) axis, depending on the excitation energy. In contrast, the A$_g^1$ and A$_g^3$ modes consistently remain polarized along the b axis, regardless of the laser energy used. We access real and imaginary parts of the Raman tensor in our analysis, uncovering resonant electron-phonon coupling.

cond-mat.mtrl-sci↗

arXiv2023

A Tunable Transition Metal Dichalcogenide Entangled Photon-Pair Source

Entangled photon-pair sources are at the core of quantum applications like quantum key distribution, sensing, and imaging. Operation in space-limited and adverse environments such as in satellite-based and mobile communication requires robust entanglement sources with minimal size and weight requirements. Here, we meet this challenge by realizing a cubic micrometer scale entangled photon-pair source in a 3R-stacked transition metal dichalcogenide crystal. Its crystal symmetry enables the generation of polarization-entangled Bell states without additional components and provides tunability by simple control of the pump polarization. Remarkably, generation rate and state tuning are decoupled, leading to equal generation efficiency and no loss of entanglement. Combining transition metal dichalcogenides with monolithic cavities and integrated photonic circuitry or using quasi-phasematching opens the gate towards ultrasmall and scalable quantum devices.

quant-ph↗

arXiv2022

Direct Growth of Monolayer MoS$_2$ on Nanostructured Silicon Waveguides

We report for the first time the direct growth of Molybdenum disulfide (MoS$_2$) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured photonic devices in a scalable process. Direct growth of 2D material on nanostructures rectifies many drawbacks of the transfer-based approaches. We show that the van der Waals materials grow conformally across the curves, edges, and the silicon-SiO$_2$ interface of the waveguide structure. Here, the waveguide structure used as a growth substrate is complex not just in terms of its geometry but also due to the two materials (Si and SiO$_2$) involved. A transfer-free method like this yields a novel approach for functionalizing nanostructured, integrated optical architectures with an optically active direct semiconductor.

physics.app-ph↗

arXiv2021

Doping controlled Fano resonance in bilayer 1T$ ^{\prime} $-ReS$ _{2} $: Raman experiments and first-principles theoretical analysis

In the bilayer ReS$ _{2} $ channel of a field-effect transistor (FET), we demonstrate using Raman spectroscopy that electron doping (n) results in softening of frequency and broadening of linewidth of the in-plane vibrational modes, leaving out-of-plane vibrational modes unaffected. Largest change is observed for the in-plane Raman mode at $\sim$ 151 cm$^{-1} $, which also shows doping induced Fano resonance with the Fano parameter 1/q = -0.17 at doping concentration of $\sim 3.7\times10^{13}$ cm$^{-2} $. A quantitative understanding of our results is provided by first-principles density functional theory (DFT), showing that the electron-phonon coupling (EPC) of in-plane modes is stronger than that of out-of-plane modes, and its variation with doping is independent of the layer stacking. The origin of large EPC is traced to 1T to 1T$ ^{\prime} $ structural phase transition of ReS$ _{2} $ involving in-plane displacement of atoms whose instability is driven by the nested Fermi surface of the 1T structure. Results are also compared with the isostructural trilayer ReSe$ _{2} $.

cond-mat.mes-hall↗