arXiv subjects

Saikat Mukhopadhyay

Publications and source records attributed to Saikat Mukhopadhyay.

7 recordsLinked to original sources

arXiv2025

Enhanced Permittivity in Wurtzite ScAlN through Nanoscale Sc Clustering

ScN alloyed AlN (ScxAl1-xN, ScAlN) is a wurtzite semiconductor with attractive ferroelectric, dielectric, piezoelectric, and optical properties. Here, we show that ScAlN films (with x spanning 0.18 to 0.36) contain nanoscale Sc-rich clusters which maintain the wurtzite crystal structure. While both molecular beam epitaxy (MBE) and sputter deposited Sc0.3Al0.7N films show Sc clustering, the degree of clustering is significantly stronger for the MBE-grown film, offering an explanation for some of the discrepancies between MBE-grown and sputtered films reported in the literature. Moreover, the MBE-grown Sc0.3Al0.7N film exhibits a dispersive and anomalously large dielectric permittivity, roughly double that of sputtered Sc0.3Al0.7N. We attribute this result to the Sc-rich clusters locally reaching x ~ 0.5 and approaching the predicted ferroelectric-to-paraelectric phase transition, resulting in a giant (local) enhancement in permittivity. The Sc-rich clusters should similarly affect the piezoelectric, optical, and ferroelectric responses, suggesting cluster-engineering as a means to tailor ScAlNs functional properties.

cond-mat.mtrl-sci↗

arXiv2025

Strongly dispersive dielectric properties of high-ScN-fraction ScAlN deposited by molecular beam epitaxy

We present a comprehensive study of dielectric properties including complex permittivity, loss, and leakage of high-ScN-fraction ScAlN thin films grown using molecular beam epitaxy (MBE). Dielectric spectroscopy is carried out on high-ScN-fraction (30%-40% ScN fraction) samples from 20 Hz to 10 GHz. We find that real permittivity ε' increases significantly with increasing ScN fraction; a trend confirmed by density functional theory. Further, ε' is strongly dispersive with frequency and increasing ScN fraction, with values for Sc0.4Al0.6N varying from 150 down to 60 with increasing frequency. Loss, dispersion, and DC leakage current correspondingly increase with ScN fraction. The high ε' and strongly dispersive behavior in MBE ScAlN are not observed in a sputter-deposited ScAlN control with a similar ScN fraction, highlighting fundamental differences between films produced by the two deposition methods. Microscopy and spectroscopy analyses are carried out on MBE- and sputter-deposited samples to compare microstructure, alloy, and dopant concentration.

cond-mat.mtrl-sci↗

arXiv2020

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close to the memory cell dimension and, thus, the impact of interfaces on PCM operation is unknown. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in thermal boundary resistance as GST transitions from one crystallographic structure (cubic) to another (hexagonal) and as the thickness of tungsten contacts is reduced from five to two nanometers. Simulations reveal that interfacial resistance between the phase change unit and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~40% and ~50%, respectively. The resultant phase-dependent and geometric effects on thermal boundary resistance dictate that the effective thermal conductivity of the phase change unit can be reduced by a factor of four, presenting a new opportunity to reduce operating currents in PCMs.

physics.app-ph↗

arXiv2016

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

Ge2Sb2Te5 and related phase change materials are highly unusual in that they can be readily transformed between amorphous and crystalline states using very fast melt, quench, anneal cycles, although the resulting states are extremely long lived at ambient temperature. These states have remarkably different physical properties including very different optical constants in the visible in strong contrast to common glass formers such as silicates or phosphates. This behavior has been described in terms of resonant bonding, but puzzles remain, particularly regarding different physical properties of crystalline and amorphous phases. Here we show that there is a strong competition between ionic and covalent bonding in cubic phase providing a link between the chemical basis of phase change memory property and origins of giant responses of piezoelectric materials (PbTiO3, BiFeO3). This has important consequences for dynamical behavior in particular leading to a simultaneous hardening of acoustic modes and softening of high frequency optic modes in crystalline phase relative to amorphous. This different bonding in amorphous and crystalline phases provides a direct explanation for different physical properties and understanding of the combination of long time stability and rapid switching and may be useful in finding new phase change compositions with superior properties.

cond-mat.mtrl-sci↗

arXiv2015

Transport Properties of Cubic Crystalline Ge$_{2}$Sb$_{2}$Te$_{5}$: A Potential Low-temperature Thermoelectric Material

Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST) has been widely used as a popular phase change material. In this study, we show that it exhibits high Seebeck coefficients 200 - 300 $μ$V/K in its cubic crystalline phase ($\it{c}$-GST) at remarkably high $\it{p}$-type doping levels of $\sim$ 1$\times$10$^{19}$ - 6$\times$10$^{19}$ cm$^{-3}$ at room temperature. More importantly, at low temperature (T = 200 K), the Seebeck coefficient was found to exceed 200 $μ$V/K for a doping range 1$\times$10$^{19}$ - 3.5$\times$10$^{19}$ cm$^{-3}$. Given that the lattice thermal conductivity in this phase has already been measured to be extremely low ($\sim$ 0.7 W/m-K at 300 K),\citep{r51} our results suggest the possibility of using $\it{c}$-GST as a low-temperature thermoelectric material.

cond-mat.mtrl-sci↗

arXiv2010

Theoretical Study of Physisorption of Nucleobases on Boron Nitride Nanotubes: A New Class of Hybrid Nano-Bio Materials

We investigate the adsorption of the nucleic acid bases, adenine (A), guanine (G), cytosine (C), thymine (T) and uracil (U) on the outer wall of a high curvature semiconducting single-walled boron nitride nanotube (BNNT) by first principles density functional theory calculations. The calculated binding energy shows the order: G>A\approxC\approxT\approxU implying that the interaction strength of the (high-curvature) BNNT with the nucleobases, G being an exception, is nearly the same. A higher binding energy for the G-BNNT conjugate appears to result from a stronger hybridization of the molecular orbitals of G and BNNT, since the charge transfer involved in the physisorption process is insignificant. A smaller energy gap predicted for the G-BNNT conjugate relative to that of the pristine BNNT may be useful in application of this class of biofunctional materials to the design of the next generation sensing devices.

physics.bio-ph↗

arXiv2009

MicroRNA Interaction network in human: implications of clustered microRNA in biological pathways and genetic diseases

A novel group of small non-coding RNA, known as microRNA (miRNA) is predicted to regulate as high as 90% of the coding genes in human. The diversity and abundance of miRNA targets offer an enormous level of combinatorial possibilities and suggest that miRNAs and their targets form a complex regulatory network. In the present study, we analyzed 711 miRNAs and their 34, 525 predicted targets in the miRBase database which generate a complex bipartite network having numerous numbers of genes forming the hub. Genes at the hub (total 9877) are significantly over represented in genes with specific molecular functions, biological processes and biological pathways as revealed from the analysis using PANTHER. We further construct a miRNA co-target network by linking every pair of miRNAs which co-target at least one gene. The weight of the link, which is taken to be the number of co-targets of the pair of miRNAs vary widely, and we could erase several links while keeping the relevant features of the network intact. The largest connected sub-graph, thus obtained, contains 479 miRNAs. More than 75% of the miRNAs deregulated in 15 different diseases collected from published data are found to be in this largest sub graph. We further analyze this sub-graph to obtain 70 small clusters containing total 330 miRNAs of 479. We identified the biological pathways where the co-targeted genes in the clusters are significantly over- represented in comparison to that obtained with that are not co-targeted by the miRNAs in the cluster. Using published data, we identified that specific clusters of miRNAs are associated with specific diseases by altering particular pathways. We propose that instead of single miRNA, clusters of miRNA that co-targets the genes are important for the regulation of miRNA in diseases.

q-bio.GN↗