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Salahuddin Nur

Publications and source records attributed to Salahuddin Nur.

10 recordsLinked to original sources

Plasma Etch Process Optimization for Photonic-Grade Diamond-on-Insulator Substrates and Thickness Evaluation using Colorimetry

Diamond color-center qubits integrated with photonic circuits can be initialized, manipulated, entangled, and read individually with high fidelity, making them attractive for large-scale modular quantum computers, quantum networks, and distributed quantum sensing. However, the limited size of heteroepitaxially grown single-crystal diamond (SCD) and photonic-grade diamond-on-insulator (DOI) substrates remains a challenge for integration with existing manufacturing processes. Here, we develop a plasma etch recipe to thin direct-bonded (100) SCD membranes (<50 $\mu$m) into large-area, thin-film DOI substrates, and demonstrate free-standing photonic chiplets fabricated from the resulting DOI. The ICP-RIE recipe preserves diamond bonding, provides sufficient micromasking and surface-quality control, and enables thin-film DOI manufacture. We thin a 10 $\mu$m diamond plate bonded to SiO$_2$/Si and obtain a photonic-grade DOI substrate with diamond thickness $\leq$300 nm. The DOI film is around 300 nm thick over 0.5 $\times$ 0.5 mm$^2$, with surface roughness < 0.5 nm, while the bonding interface remains intact. Diamond photonic chiplets are fabricated on this DOI substrate using a standard two-step lithography process, without complex thin-film transfer, under-etching, or pedestal formation. We also present a colorimetric study of diamond visibility on SiO$_2$ and quantify color differences across thicknesses in common colorimetric spaces. This analysis enables automatic diamond-thickness extrapolation from standard optical microscope images with 5 nm resolution, in good agreement with white-light interferometry (WLI) measurements. The DOI substrate and colorimetric thickness-evaluation method provide an effective fabrication platform and reliable validation route for scalable manufacturing of diamond nanophotonic devices, opening a path toward large-scale integrated quantum systems.

physics.optics

Cross Waveguide Design for Color-Centers in Diamond for Photonic Quantum Computing

Color centers in diamond are a promising platform for quantum computing applications because of their optical and spin properties. However, diamond presents some technological challenges that limit its use in complex or large photonic circuits. To mitigate these limitations, it is technically effective to separate the smallest possible diamond photonic structures or chiplet containing the color center(s) from the rest of the circuit, which is fabricated on another material platform, and then heterogeneously integrate them. Considering efficient excitation and photon collection from waveguide-coupled color centers, we design a cross waveguide as the primary component of our chiplet to access the color centers, channeling excitation and emitted photons into different waveguides, and connecting the structure to the other components of the photonic circuit. The chiplet containing the cross waveguide and supporting structures requires careful optimization of each subcomponent. The receptor's design is also critical for optimal signal transmission. In this paper, we develop a simple but efficient methodology to optimize the main components constituting both the chiplet and the receptor for their synergistic operation. The designed structure has an excitation-to-emission conversion of more than 5.4%, crosstalk of less than -40 dB, a working bandwidth of 160 nm, fabrication feasibility and tolerance within the limits of modern nanofabrication, and a mechanical solid structure with a footprint of less than 2000 $\mu$m

physics.optics

Toward a CMOS-integrated quantum diamond biosensor based on NV centers

We report progress toward a CMOS-integrated quantum diamond biosensing platform that combines nitrogen-vacancy (NV) centers in diamond with a custom 40 nm CMOS Single-Photon Avalanche Diode (SPAD) array. The system integrates on-chip active quenching and digital readout with external FPGA-based photon counting, compact microwave delivery, and practical optical excitation and collection schemes to support widefield optically detected magnetic resonance (ODMR). System-level design considerations spanning fluorescence collection efficiency, detector count-rate capability, and microwave homogeneity are analyzed with biological compatibility and scalability in mind. Using superparamagnetic iron oxide nanoparticle (SPION)-labeled HEK293T cells as a representative use case, simple dipole-field estimates indicate that sub-$\mu$T sensitivity is required to resolve ODMR shifts within typical ensemble linewidths. Based on the proposed architecture and efficiency analysis, a magnetic field sensitivity of approximately 90 nT/$\sqrt{\mathrm{Hz}}$ per pixel is estimated. These results outline a practical path from optics-heavy quantum diamond microscopes toward compact, CMOS-integrated NV-based biosensors for quantitative magnetic imaging in complex biological environments.

physics.app-ph

Neural Network Architectures for Scalable Quantum State Tomography: Benchmarking and Memristor-Based Acceleration

Quantum State Tomography (QST) is essential for characterizing and validating quantum systems, but its practical use is severely limited by the exponential growth of the Hilbert space and the number of measurements required for informational completeness. Many prior claims of performance have relied on architectural assumptions rather than systematic validation. We benchmark several neural network architectures to determine which scale effectively with qubit number and which fail to maintain high fidelity as system size increases.To address this, we perform a comprehensive benchmarking of diverse neural architectures across two quantum measurement strategies to evaluate their effectiveness in reconstructing both pure and mixed quantum states. Our results reveal that CNN and CGAN scale more robustly and achieve the highest fidelities, while Spiking Variational Autoencoder (SVAE) demonstrates moderate fidelity performance, making it a strong candidate for embedded, low-power hardware implementations.Recognizing that practical quantum diagnostics will require embedded, energy-efficient computation, we also discuss how memristor-based Computation-in-Memory (CiM) platforms can accelerate these models in hardware, mitigating memory bottlenecks and reducing energy consumption to enable scalable in-situ QST. This work identifies which architectures scale favorably for future quantum systems and lays the groundwork for quantum-classical co-design that is both computationally and physically scalable.

quant-ph

Strain Effects in a Directly Bonded Diamond-on-Insulator Substrate

The direct bonding process of a diamond-on-insulator (DOI) substrate enables monolithic integration of diamond photonic structures for quantum computing by improving photon collection efficiency and entanglement generation rate between emitters. It also addresses key fabrication challenges, such as robustness, bonding strength, and scalability. This study investigates strain effects in DOI substrates following direct bonding. Strain generation is expected near the diamond-SiO$_2$/Si interface due to thermal expansion coefficient mismatch between the bonded materials. Strain-induced lattice distortions are characterized using nitrogen-vacancy (NV) centers in diamond via optically detected magnetic resonance (ODMR) and photoluminescence (PL) mapping. PL mapping reveals interference fringes in unbonded regions, indicating bonding irregularities. Depth-resolved ODMR measurements show a volumetric strain component increase of $\approx$0.45 MHz and a shear component increase of $\approx$0.71 MHz between the top surface and the DOI interface. However, ODMR signal contrast and peak linewidth remain largely unaffected, suggesting no visible deterioration in the optical properties of the emitters. By combining ODMR and PL mapping, this work establishes a robust methodology for assessing bonding quality and strain impact on NV centers, an essential step toward advancing scalable quantum technologies and integrated photonic circuits.

physics.app-ph

Deep Learning-Optimized, Fabrication Error-Tolerant Photonic Crystal Nanobeam Cavities for Scalable On-Chip Diamond Quantum Systems

Cavity-enhanced diamond color center qubits can be initialized, manipulated, entangled, and read individually with high fidelity, which makes them ideal for large-scale, modular quantum computers, quantum networks, and distributed quantum sensing systems. However, diamond's unique material properties pose significant challenges in manufacturing nanophotonic devices, leading to fabrication-induced structural imperfections and inaccuracies in defect implantation, which hinder reproducibility, degrade optical properties and compromise the spatial coupling of color centers to small mode-volume cavities. A cavity design tolerant to fabrication imperfections, such as surface roughness, sidewall slant, and non-optimal emitter positioning, can improve coupling efficiency while simplifying fabrication. To address this challenge, a deep learning-based optimization methodology is developed to enhance the fabrication error tolerance of nanophotonic devices. Convolutional neural networks (CNNs) are applied to promising designs, such as L2 and fishbone nanobeam cavities, predicting Q-factors up to one million times faster than traditional finite-difference time-domain (FDTD) simulations, enabling efficient optimization of complex, high-dimensional parameter spaces. The CNNs achieve prediction errors below 3.99% and correlation coefficients up to 0.988. Optimized structures demonstrate a 52% reduction in Q-factor degradation, achieving quality factors of 5e4 under real-world conditions and a two-fold expansion in field distribution, enabling efficient coupling of non-optimally positioned emitters. This methodology enables scalable, high-yield manufacturing of robust nanophotonic devices, including the cavity-enhanced diamond quantum systems developed in this study.

physics.optics

Hydrophilic direct bonding of (100) diamond and deposited SiO$_2$ substrates

Diamond has emerged as a leading material for solid-state spin quantum systems and extreme environment electronics. However, a major limitation is that most diamond devices and structures are fabricated using bulk diamond plates. The absence of a suitable diamond-on-insulator (DOI) substrate hinders the advanced nanofabrication of diamond quantum and electronic devices, posing a significant roadblock to large-scale, on-chip diamond quantum photonics and electronics systems. In this work, we demonstrate the direct bonding of (100) single-crystal (SC) diamond plates to PECVD-grown SiO$_2$/Si substrates at low temperatures and atmospheric conditions. The surfaces of the SiO$_2$ and diamond plates are then activated using oxygen plasma and piranha solution, respectively. Bonding occurs when the substrates are brought into contact with water in between and annealed at 200$^{\circ}$C under atmospheric conditions, resulting in a DOI substrate. We systematically studied the influence of piranha solution treatment time and diamond surface roughness on the shear strength of the bonded substrate, devising an optimal bonding process that achieves a high yield rate of 90$\%$ and a maximum shear strength of 9.6 MPa. X-ray photoelectron spectroscopy (XPS) was used for quantitative analysis of the surface chemicals at the bonding interface. It appears that the amount of -OH bindings increases with the initial roughness of the diamond, facilitating the strong bonding with the SiO$_2$. This direct bonding method will pave the way for scalable manufacturing of diamond nanophotonic devices and enable large-scale integration of diamond quantum and electronic systems.

cond-mat.mtrl-sci

Coherent characterisation of a single molecule in a photonic black box

Extinction spectroscopy is a powerful tool for demonstrating the coupling of a single quantum emitter to a photonic structure. However, it can be challenging in all but the simplest of geometries to deduce an accurate value of the coupling efficiency from the measured spectrum. Here we develop a theoretical framework to deduce the coupling efficiency from the measured transmission and reflection spectra without precise knowledge of the photonic environment. We then consider the case of a waveguide interrupted by a transverse cut in which an emitter is placed. We apply that theory to a silicon nitride waveguide interrupted by a gap filled with anthracene that is doped with dibenzoterrylene molecules. We describe the fabrication of these devices, and experimentally characterise the waveguide coupling of a single molecule in the gap.

quant-ph

Polymer-encapsulated organic nanocrystals for single photon emission

We demonstrate an emulsion-polymerisation technique to embed dibenzoterrylene-doped anthracene nanocrystals in polymethyl methacrylate (PMMA) nanocapsules. The nanocapsules require no further protection after fabrication and are resistant to sublimation compared to unprotected anthracene. The room temperature emission from single dibenzoterrylene molecules is stable and when cooled to cryogenic temperatures we see no change in their excellent optical properties compared to existing growth methods. These now robust nanocapsules have potential for surface functionalisation and integration into nanophotonic devices, where the materials used are compatible with incorporation in polymer-based designs.

physics.optics

Silicon photonic crystal cavities at near band-edge wavelengths

We demonstrate photonic crystal L3 cavities with resonant wavelength around 1.078 \textmu m on undoped silicon-on-insulator, designed to enhance spontaneous emission from phosphorus donor-bound excitons.\enspace We have optimised a fabrication recipe using readily available process materials such as polymethyl methacrylate (PMMA) as a soft electron-beam mask and a Chemical Vapour Deposition (CVD) grown oxide layer as a hard mask. Our bilayer resist technique efficiently produces photonic crystal cavities with a quality factor ($Q$) of $\sim 5,000$ at a wavelength of $1.078$ \textmu m, measured using cavity reflection measurements at room temperature. We observe a decrease of $Q$ as the cavity resonance shifts to shorter wavelengths ($Q \lesssim3,000$ at wavelengths $< 1.070$ \textmu m), which is mostly due to the intrinsic absorption of silicon.

physics.app-ph