arXiv subjects

Salih Demirci

Publications and source records attributed to Salih Demirci.

3 recordsLinked to original sources

arXiv2025

Interfacial Charge Transfer and Electronic Structure Modulation in Ultrathin Graphene P3HT Hybrid Heterostructures

Ultrathin polymer-graphene heterostructures are promising materials for next generation optoelectronic and photovoltaic technologies, while the influence of the polymer's structural variation on interfacial charge transfer remains unclear. Here, using ab initio quantum mechanical calculations we show how different forms of Poly(3-hexylthiophene) (P3HT), a widely used organic semiconductor, interact with graphene. We analyze the effects of molecular chain length, end-group termination, periodicity, and the distinction between ordered and random P3HT arrangements. For isolated P3HT, the band gap decreases with increasing chain length and layer thickness, while structural disorder leads to slightly larger gaps due to reduced electronic coupling. When P3HT is deposited on graphene, all configurations exhibit spontaneous charge transfer, with electrons accumulating on graphene and holes remaining in the polymer. This effect is significantly enhanced in ordered and fully periodic structures and is noticeably weaker in disordered ones. Charge density analyses further show that thicker and more ordered P3HT layers improve electron hole separation across the interface. Our results reveal how molecular structure governs charge transfer in P3HT-graphene heterojunctions and provide practical guidelines for designing high efficiency polymer-graphene photovoltaic devices.

cond-mat.mtrl-sci↗

arXiv2024

Ultra-thin Carbon Biphenylene Network as an Anisotropic Thermoelectric Material with High Temperature Stability Under Mechanical Strain

Carbon biphenylene network (C-BPN), which is an ultra-thin material consisting of carbon atoms arranged in square-hexagonal-octagonal (4-6-8) periodic rings, has intriguing properties for nano-scale device design due to its unique crystal structure. Here, using the Landauer formalism in combination with first-principles calculations, we show that C-BPN is a highly stable thermoelectric material at elevated temperatures under mechanical strain, where its thermoelectric efficiency can be anisotropically engineered. Transport calculations reveal that C-BPN's transmission spectrum has significant degrees of directional anisotropy and it undergoes a metal-insulator transition under strain, which leads to an increase in its Seebeck coefficient. C-BPN's lattice thermal conductance can be selectively tuned up to 35% bidirectionally at room temperature by strain engineering. Enhancement in its power factor and the suppression of its lattice thermal conductance improves the p-type figure of merit up to 0.31 and 0.76 at 300 and 1000~K, respectively. Our findings reveal that C-BPN has high potency to be used in thermoelectric nano devices with selective anisotropic properties at elevated temperatures.

cond-mat.mtrl-sci↗

arXiv2017

Modification of electronic, magnetic structure and topological phase of bismuthene by point defects

This paper reveals how electronic, magnetic structure and topological phase of 2D, single-layer structures of bismuth are modified by point defects. We first showed that free standing, single-layer, hexagonal structure of bismuth, named as h-bismuthene exhibits non-trivial band topology. We then investigated interactions between single foreign adatoms and bismuthene structures, which comprise stability, bonding, electronic and magnetic structures. Localized states in diverse location of the band gap and resonant states in band continua of bismuthene are induced upon the adsorption of different adatoms, which modify electronic and magnetic properties. Specific adatoms result in reconstruction around the adsorption site. Single and divacancies can form readily in bismuthene structures and remain stable at high temperatures. Through rebondings Stone-Whales type defects are constructed by divacancies, which transform into a large hole at high temperature. Like adsorbed adatoms, vacancies induce also localized gap states, which can be eliminated through rebondings in divacancies. We also showed that not only optical and magnetic properties, but also topological features of pristine h-bismuthene can be modified by point defects. Modification of topological features depends on the energies of localized states and also on the strength of coupling between point defects.

cond-mat.mes-hall↗