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Salvador Barranco Cárceles

Publications and source records attributed to Salvador Barranco Cárceles.

3 recordsLinked to original sources

A numerical and efficient model for thermo-field electron emission calculations

As electron sources are reduced in size, fabricated in new materials, or pushed for performance, the analytical formulations for thermo-field electron emission, namely Fowler-Nordheim and Murphy-Good equations and their JWKB-based extensions, are increasingly applied out of the range of conditions for which they were derived. We present GETELEC-3, an open-source code that replaces them with a direct numerical solution of the one-dimensional time-independent Schrödinger equation (1D-TISE). Several methods to solve the 1D-TISE have been implemented to test for speed, robustness, and solution's uncertainty. The Noumerov algorithm is found to be quickest, with the solution uncertainty below 1%, and together with an optimised kernel that advances all electron energies in parallel, the cost of calculating the current density is reduced to a few milliseconds - comparable to the JWKB evaluation. To further boost the calculation speed, especially in complicated barriers, a neural network has been trained on the residual of the logarithm of the semiclassical reference and it reproduces the current density better than 0.4% at a fraction of the computational cost. The code is developed for metals and semiconductors, accepts arbitrary potentials and density of states, and comes with a user-friendly interface and compiled executable to democratise rigorous electron emission calculations and data analysis.

cond-mat.stat-mech↗

Towards 4D modelisation of thermal-field emission from semiconductors

The theoretical picture of thermal field-emission (TFE) from semiconductors has been limited to 1D and 2D models. This can be attributed to the complex and interdependent phenomena that is involved in TFE from semiconductors which makes the calculations cumbersome. Such limitations result in a partial understanding of the underlying physics of semiconducting surfaces under high electrical fields, which requires the addition of the temporal dimension (4D) to yield a realistic model. Here we develop a 3D model of TFE from semiconductors that can take arbitrary geometries and doping levels. Our model successfully reproduces the characteristic saturation plateau of some semiconductors, as well as its dependence in temperature. The model is found to be in good agreement with experimental data from ntype Germanium at a qualitative level. We propose this model as a platform for future extensions into the full 4D framework, incorporating temporal dynamics for a more complete and predictive description of thermal-field emission from semiconductors.

cond-mat.mtrl-sci↗

Theory and computation of thermal-field emission from semiconductors

Semiconducting field emitters present some interesting features (e.g.; self-limited electron emission) for both scientific interest and industrial applications. The analysis of experimental results and device design has been restrained by the lack of accurate 3D models for the simulation of thermal-field emission from semiconductors. Here we review and correct the equations of field emission from semiconductors and include them to expand GETELEC (General Tool for Electron Emission Calculations). Our method covers all electron emission regime (field, thermal, and intermediate), aiming to maximise the calculation accuracy while minimising the computational cost. GETELEC-2.0 is able to reproduce the characteristic non-linear I-V curves in Fowler-Nordheim coordinates obtained from semiconductors, giving insights about their nature. As well as providing an explanation to the lack of experimental observation of valence band electrons from semiconductors.

cond-mat.mtrl-sci↗