arXiv subjects

Sambhu G Nath

Publications and source records attributed to Sambhu G Nath.

6 recordsLinked to original sources

arXiv2026

Photon Momentum Enabled Symmetry Breaking and Nonlinear Photocurrents in the Centrosymmetric Dirac Semimetal PdTe

In centrosymmetric Dirac semimetals, second order nonlinear photocurrents are forbidden by the coexistence of time-reversal and inversion symmetries. Here, we demonstrate that finite photon momentum transfer acts as a dynamic symmetry breaking mechanism in PdTe, enabling nonlinear optical responses that are nominally forbidden in the centrosymmetric bulk. Through polarization sensitive measurements, we resolve distinct contributions from the circular photogalvanic effect (CPGE), geometric shift currents, and photon drag mediated processes. We show that the helicity dependent current vanishes at normal incidence and reverses sign with the angle of incidence, reflecting the coupling between photons and spin polarized surface states. Crucially, thickness dependent analysis reveals that the helicity dependent photocurrent component C scales with film thickness, establishing a robust bulk contribution enabled by momentum transfer. This confirms that incident photons provide the directional axis required to probe interband quantum geometry, rather than the response originating solely from surface states or strain. Our results demonstrate that optical excitation can dynamically reduce the effective symmetry of the system, enabling access to quantum geometric tensors and establishing PdTe as a promising platform for exploring nonequilibrium dynamics governed by photon momentum in high symmetry topological materials.

cond-mat.mes-hall↗

arXiv2025

Magnetoconductance evolution across the topological-trivial phase transition in ${In_{x}}({Bi_{0.3}}{Sb_{0.7}})_{2-x}{Te_3}$ thin films

We investigate the evolution of electronic transport across the topological-trivial phase transition in ${\rm In}_{x}({\rm Bi}_{0.3}{\rm Sb}_{0.7})_{2-x}{\rm Te}_3$ thin films by systematically tuning the indium concentration $x$. Increasing $x$ reduces the effective spin-orbit coupling, driving a topological quantum phase transition near $x \approx 7\%$, and at higher disorder a crossover from diffusive to strongly localized transport around $x \approx 15\%$. In the diffusive regime, the magnetoconductance is well described by the Hikami-Larkin-Nagaoka formalism, with the evolution of the WAL prefactor $α$ correlating with the band-inversion transition. Beyond the diffusive limit, transport crosses into variable-range hopping, accompanied by a striking reversal of magnetoconductance from negative to positive. The observed positive low-field magnetoconductance, its pronounced anisotropy, and its temperature evolution point to an orbital origin of the response. These features are naturally captured by incorporating the incoherent hopping mechanism of Raikh \textit{et al.} together with wavefunction shrinkage, rather than by conventional quantum-correction frameworks. Our results provide a unified picture of how topology, spin-orbit coupling, and disorder collectively determine the full field-temperature magnetotransport landscape in this material class, establishing a clear experimental link between the topological phase transition and the onset of incoherent hopping-dominated conduction.

cond-mat.mtrl-sci↗

arXiv2025

Ultrafast dynamics of carriers, coherent acoustic phonons and strain pulses in BiSbTe1.5Se1.5 topological insulator thin films

We Investigate the ultrafast carrier, coherent acoustic phonons (CAPs), and acoustic strain pulse dynamics in topological insulator BiSbTe1.5Se1.5 (BSTS) thin films of varying thickness using degenerate pump-probe reflection spectroscopy. Here, Sapphire has been chosen as the main substrate due to its maximum acoustic reflectivity at the BSTS-sapphire interface compared to BSTS-GaAs, BSTS-Si, and BSTS-MgO interfaces. For the films with thickness more than twice the penetration depth, the transient reflectivity data predominantly exhibits travelling acoustic strain pulses (TASP) on the top of single-exponential electronic decay (~ 2 ps). In contrast, films with thickness less than penetration depth are dominated by CAPs and a bi exponential electronic background with decay times of ~ 2 ps and ~ 260-380 ps. The observed TASP dynamics are well-described by a theoretical acoustic strain model. Further, to elucidate the underlying physical mechanisms governing the behavior of photo-excited carriers, CAPs, and strain pulses, we performed carrier density and temperature-dependent (7-294 K) studies on BSTS films with thicknesses of 22 nm and 192 nm. In the 22 nm film, the both fast and slow decay processes increase with carrier density at room temperature but decrease with temperature at a carrier density of 1.7*10^{19} cm^{-3}. A detailed analysis suggests that the faster decay arises from electron-phonon scattering and carrier diffusion, while the slower decay likely results from defect-assisted and phonon-assisted recombination. Furthermore, increasing the sample temperature leads to anharmonic decay induced softening of ~ 14 % in the phonon frequency and an anomalous ~ 48 % decrease in the phonon damping parameter due to reduced Dirac surface electron and acoustic phonon scattering.

cond-mat.mtrl-sci↗

arXiv2024

Investigation of magnetic order influenced phonon and electron dynamics in MnBi$_{2}$Te$_{4}$ and Sb doped MnBi$_{2}$Te$_{4}$ through terahertz time-domain spectroscopy

MnBi$_{2}$Te$_{4}$, the first topological insulator with inherent magnetic ordering, has attracted significant attention recently for providing a platform to realize several exotic quantum phenomena at relatively higher temperatures. In this work, we have carried out an exhaustive investigation of MnBi$_{2}$Te$_{4}$ and Sb doped MnBi$_{2}$Te$_{4}$ thin films using THz time-domain spectroscopy. The extracted real THz conductivity displays a strong IR active E$_u$ phonon absorption peak (at $\sim$1.5 THz) merged on top of the Drude-like contributions from bulk and surface electrons. The extracted parameters from the THz conductivity data fitted to the Drude-Fano-Lorentz model, show significant changes in their temperature dependence around the magnetic ordering Néel temperature of $\sim$ 25K, which is suggestive of the coupling between magnetic ordering and electronic band structure. The frequency of the E$_u$ phonon displays an anomalous blue-shift with increasing temperatures by $\sim$ 0.1 THz ($\sim$7 %) for MnBi$_{2}$Te$_{4}$ and $\sim$0.2 THz ($\sim$13 %) for Sb doped MnBi$_{2}$Te$_{4}$ between 7K and 250K. The line-shape of the E$_u$ phonon mode in Sb doped MnBi$_{2}$Te$_{4}$ shows significant Fano asymmetry compared to that of MnBi$_{2}$Te$_{4}$, indicating that Sb doping plays an important role in the Fano interference between the phonons and the electrons, in this system. These results indicate that the anomalous phonon behaviour seen in MBT arise mainly from positive cubic anharmonicity induced self energy parameter, whereas both anharmonicity and the electron phonon coupling are at play in making the relatively higher anomalous blue shift of phonons in MBST. Our studies provide the first comprehensive understanding of the phonon and electron dynamics of MnBi$_{2}$Te$_{4}$ and Sb doped MnBi$_{2}$Te$_{4}$ in the THz range using time-domain THz spectroscopy.

cond-mat.mtrl-sci↗

arXiv2024

Anisotropic magneto-photothermal voltage in Sb2Te3 topological insulator thin films

We studied longitudinal and Hall photothermal voltages under a planar magnetic field scan in epitaxial thin films of the Topological Insulator (TI) Sb2Te3, grown using pulsed laser deposition (PLD). Unlike prior research that utilised polarised light-induced photocurrent to investigate the TI, our study introduces advancements based on unpolarized light-induced local heating. This method yields a thermoelectric response exhibiting a direct signature of strong spin-orbit coupling. Our analysis reveals three distinct contributions when fitting the photothermal voltage data to the angular dependence of the planar magnetic field. The interaction between the applied magnetic field and the thermal gradient on the bulk band orbitals enables the differentiation between the ordinary Nernst effect from the out-of-plane thermal gradient and an extraordinary magneto-thermal contribution from the planar thermal gradient. The fitting of our data to theoretical models indicates that these effects primarily arise from the bulk states of the TI rather than the surface states. These findings highlight PLD-grown epitaxial topological insulator thin films as promising candidates for optoelectronic devices, including sensors and actuators. Such devices offer controllable responses through position-dependent, non-invasive local heating via focused incident light and variations in the applied magnetic field direction.

cond-mat.mes-hall↗

arXiv2023

Experimental investigation of the effect of topological insulator on the magnetization dynamics of ferromagnetic metal: $BiSbTe_{1.5}Se_{1.5}$ and $Ni_{80}Fe_{20}$ heterostructure

We have studied ferromagnetic metal/topological insulator bilayer system to understand magnetization dynamics of ferromagnetic metal (FM) in contact with a topological insulator (TI). At magnetic resonance condition, the precessing magnetization in the metallic ferromagnet ($Ni_{80}Fe_{20}$) injects spin current into the topological insulator ($BiSbTe_{1.5}Se_{1.5}$), a phenomenon known as spin-pumping. Due to the spin pumping effect, fast relaxation in the ferromagnet results in the broadening of ferromagnetic resonance linewidth ($ΔH$). We evaluated the parameters like effective Gilbert damping coefficient ($α_{eff}$), spin-mixing conductance ($g_{eff}^{\uparrow \downarrow}$) and spin current density ($j_S^0$) to confirm a successful spin injection due to spin-pumping into the $BiSbTe_{1.5}Se_{1.5}$ layer. TIs embody a spin-momentum locked surface state that span the bulk band-gap. It can act differently to the FM magnetization than the other normal metals. To probe the effect of topological surface state, a systematic low temperature study is crucial as surface state of TI dominates at lower temperatures. The exponential growth of $ΔH$ for all different thickness combination of FM/TI bilayers and effective Gilbert damping coefficient ($α_{eff}$) with lowering temperature confirms the prediction that spin chemical bias generated from spin-pumping induces surface current in TI due to spin-momentum locking. The hump-like feature of magnetic anisotropy field ($H_K$)of the bilayer around 60K suggests that the decrease of interfacial in-plane magnetic anisotropy can result from exchange coupling between the TI surface state and the local moments of FM layer.

cond-mat.mes-hall↗