arXiv subjects

Sami El-Khatib

Publications and source records attributed to Sami El-Khatib.

3 recordsLinked to original sources

arXiv2026

Pressure-Tuned Competing Electronic States in Layered Tellurides

Layered transition-metal dichalcogenides (TMDs) host competing electronic states that can be tuned by external perturbations, providing a platform to explore the interplay between disorder, electronic structure, and quantum transport. Here we investigate magnetotransport in bulk semiconducting 2H-MoTe2 under hydrostatic pressure. At ambient pressure, transport evolves from high-temperature metallic behavior into activated conduction and ultimately a strongly localized variable-range hopping regime, accompanied by a pronounced magnetotransport anomaly near 45 K and large, nonsaturating magnetoresistance extending up to an unprecedented field of 60 T in semiconducting 2H-MoTe2. Under compression to 15.6 GPa, the insulating state is rapidly suppressed and a low-resistivity regime emerges in which quantum interference dominates, exhibiting a crossover from weak antilocalization (WAL) to weak localization (WL) at low temperatures. A physically motivated phenomenological description captures the magnetoresistance across these regimes and yields a characteristic electronic length scale that remains comparable across the localized and quantum-interference regimes. First-principles calculations reveal a continuous pressure-driven collapse of the bandgap into a semimetallic electronic structure. These results establish a unified picture of pressure-tuned transport spanning hopping and quantum-coherent regimes.

cond-mat.str-el↗

arXiv2026

Competing magnetic states in a non-coplanar Kagome magnet

Non-collinear Kagome antiferromagnets (AFMs) Mn3X (X = Sn, Ga, Ge, Ir, Pt) can generate an anomalous Hall effect (AHE) despite vanishing net magnetization, enabled by broken time-reversal and inversion symmetries. However, strong in-plane anisotropy has limited studies of the AFM-AHE and electronic applications to coplanar spin configurations. Non-coplanar spin textures in these systems have been realized only in low temperature spin-glass states or at interfaces with heavy metals. Here, we report an intrinsic non-coplanar spin configuration persisting up to 400 K in cubic-phase Mn3Ge, originating from coexisting symmetric and antisymmetric exchange interactions. Competing magnetic states associated with this non-coplanar spin configuration give rise to an unconventional AHE with a magnetic-field-induced sign reversal and a hump-like feature. Our findings establish a platform for non-coplanar magnetism in AFM spintronics.

cond-mat.mtrl-sci↗

arXiv2022

Electrochemically-driven insulator-metal transition in ionic-liquid-gated antiferromagnetic Mott-insulating NiS$_2$ single crystals

Motivated by the existence of superconductivity in pyrite-structure CuS$_2$, we explore the possibility of ionic-liquid-gating-induced superconductivity in the proximal antiferromagnetic Mott insulator NiS$_2$. A clear gating-induced transition from a two-dimensional insulating state to a three-dimensional metallic state is observed at positive gate bias on single crystal surfaces. No evidence for superconductivity is observed down to the lowest measured temperature of 0.45 K, however. Based on transport, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and other techniques, we deduce an electrochemical gating mechanism involving a substantial decrease in the S:Ni ratio (over hundreds of nm), which is both non-volatile and irreversible. This is in striking contrast to the reversible, volatile, surface-limited, electrostatic gate effect in pyrite FeS$_2$. We attribute this stark difference in electrochemical vs. electrostatic gating response in NiS$_2$ and FeS$_2$ to the much larger S diffusion coefficient in NiS$_2$, analogous to the different behaviors observed among electrolyte-gated oxides with differing O-vacancy diffusivities. The gating irreversibility, on the other hand, is associated with the lack of atmospheric S; this is in contrast to the better understood oxide case, where electrolysis of atmospheric H$_2$O provides an O reservoir. This study of NiS$_2$ thus provides new insight into electrolyte gating mechanisms in functional materials, in a previously unexplored limit.

cond-mat.mtrl-sci↗