arXiv subjects

Samuel Gallego-Parra

Publications and source records attributed to Samuel Gallego-Parra.

3 recordsLinked to original sources

arXiv2026

High-pressure single-crystal X-ray diffraction study of ErVO4

We present an investigation into the crystal structure of ErVO4 under variable pressure conditions. The high-pressure single crystal X-ray diffraction experiments performed employing helium as the pressure medium facilitated structure refinements up to 24.1(2) GPa. The transition from zircon to scheelite was observed at a pressure of 7.9(1) GPa. In contrast to previous reports, we did not detect any sign of phase coexistence. We also did not observe the second phase transitions previously predicted by density-functional theory to occur below 20 GPa. The determination of the pressure dependence of unit-cell parameters and volume yields precise values for linear compressibility of each axis and the pressure-volume equation of state for both the zircon and scheelite phases. Additional information on the mechanical properties of ErVO4, obtained from density-functional theory calculations, is also reported.

cond-mat.mtrl-sci↗

arXiv2023

Pressure-induced formation of cubic lutetium hydrides derived from trigonal LuH$_3$

In recent years, there has been a fervent search for room-temperature superconductivity within the binary hydrides. However, as the number of untested compounds dwindled, it became natural to begin searching within the ternary hydrides. This led to the controversial discovery of room-temperature superconductivity at only 1GPa in nitrogen-doped lutetium hydride [Dasenbrock-Gammon et al., Nature 615, 244 (2023)] and consequently provided much impetus for the synthesis of nitrogen-based ternary hydrides. Here, we report the synthesis of stable trigonal LuH$_3$ by hydrogenating pure lutetium which was subsequently pressurised to $\sim$2GPa in a dilute-N$_2$/He-rich pressure medium. Raman spectroscopy and x-ray diffraction were used to characterise the structures throughout. After depressurising, energy-dispersive and wavelength-dispersive X-ray spectroscopies characterised the final compound. Though our compound under pressure exhibits similar structural behaviour to the Dasenbrock-Gammon et al. sample, we do not observe any nitrogen within the structure of the recovered sample at ambient pressure. We observe two cubic structures under pressure that simultaneously explain the X-ray diffraction and Raman spectra observed: the first corresponds well to $Fm\overline{3}m$ LuH$_{2+x}$, whilst the latter is an $Ia\overline{3}$-type structure.

cond-mat.supr-con↗

arXiv2023

Structural, Vibrational, and Electronic Behavior of Two GaGeTe Polymorphs under compression

GaGeTe is a layered topological semimetal that has been recently found to exist in at least two different polytypes, $α$-GaGeTe ($R\bar{3}m$) and $β$-GaGeTe ($P6_3 mc$). Here we report a joint experimental and theoretical study of the structural, vibrational, and electronic properties of these two polytypes at high pressure. Both polytypes show anisotropic compressibility and two phase transitions, above 7 and 15 GPa, respectively, as confirmed by XRD and Raman spectroscopy measurements. Although the nature of the high-pressure phases is not confirmed, comparison with other chalcogenides and total-energy calculations allow us to propose possible high-pressure phases for both polytypes with an increase in coordination for Ga and Ge atoms from 4 to 6. In particular, the simplification of the X-ray patterns for both polytypes above 15 GPa suggests a transition to a structure of relatively higher symmetry than the original one. This result is consistent with the rocksalt-like high-pressure phases observed in parent III-VI semiconductors, such as GaTe, GaSe, and InSe. Pressure-induced amorphization is observed upon pressure release. The electronic band structures of $α$-GaGeTe and $β$-GaGeTe and their pressure dependence also show similarities to III-VI semiconductors, thus suggesting that the germanene-like sublayer induces a semimetallic character in both GaGeTe polytypes. Above 3 GPa, both polytypes lose their topological features, due to the opening of the direct band gap, while the reduction of the interlayer space increases the thermal conductivity at high pressure.

cond-mat.mtrl-sci↗