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Samuel Jeong

Publications and source records attributed to Samuel Jeong.

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A depth resolved investigation of hydrogen uptake in carbon based nanostructures by soft-to-hard photoemission spectroscopy

Hydrogen chemisorption on graphitic carbon modifies the carbon orbital hybridization from sp2 to sp3, altering both structural and electronic properties. Understanding not only the lateral extent but also the depth distribution of hydrogen uptake in three-dimensional carbon architectures is essential for both fundamental studies and storage applications. To this end, we investigate here the evolution of the C 1s core-level lineshape in nanoporous graphene (NPG) and vertically aligned carbon nanotubes (CNTs) upon hydrogenation, exploiting soft-to-hard X-ray photoemission spectroscopy to achieve a depth-resolved analysis. Decomposition of the C 1s spectra reveals the formation of an sp3 rich overlayer, indicating hydrogen chemisorption limited to the outermost accessible surfaces in both systems. These results clarify the depth distribution of hydrogen in curved and porous graphitic networks and provide quantitative constraints on its chemisorption for carbon-based hydrogen storage applications.

cond-mat.mtrl-sci

Insulating Electronic States Near the Dirac Point Arising from Twisted Stacking and Curvature in 3D Nanoporous Graphene

Twist-stacked graphene with a twist angle $\theta$ of $\sim 5^\circ$--$30^\circ$ retains two-dimensional monolayer graphene-like Dirac states near the Dirac point. In three-dimensional nanoporous graphene (3D-NPG), curvature inherently produces twist-stacking and topological defects required to form a porous network. When regions with $\theta \ge 5^\circ$ dominate, Dirac states in individual layers are expected to persist, allowing the Dirac-electron behavior to be tuned through coupling to the 3D curved geometry. However, predicted band gap formation or localized states have remained unobserved. Here we report that 3D-NPG maintains monolayer-like Dirac electronic states while simultaneously exhibiting insulating behavior near the Dirac point. Raman G-band softening confirms these monolayer-like states, and an Arrhenius-type temperature-resistance trend coexisting with weak localization near the Dirac point indicates partially insulating states induced by topological defects. These findings demonstrate that 3D-NPG hosts distinctive Dirac electronic states coupled to 3D curvature, providing a platform for developing new functionalities in 3D graphene-based electronics and energy devices.

cond-mat.mes-hall