arXiv subjects

Samuel L. Rudge

Publications and source records attributed to Samuel L. Rudge.

At least 19 recordsLinked to original sources

arXiv2026

Full Quantum and Mixed Quantum--Classical Dynamics of Hot Exciton Cooling in Semiconductor Nanocrystals

Hot-exciton relaxation in semiconductor nanocrystals (NCs) is often described using perturbative theories, but their accuracy is difficult to assess for realistic exciton--phonon Hamiltonians. Here, we benchmark the perturbative quantum master equation (QME) and several mixed quantum--classical (MQC) methods against fully quantum mechanical dynamics. Using atomistically parameterized models for CdSe core and CdSe/CdS core--shell NCs, we find that bare CdSe exhibits an ultrafast initial decay followed by slower cooling, whereas the core--shell system is dominated by the slower component. Analysis of reduced models shows that the ultrafast component arises from rapid diabatic state mixing driven by thermal fluctuations of low-frequency phonons, rather than from nuclear-assisted energy relaxation. The QME captures the initial fast decay but can fail for the slower relaxation in the diabatic representation, while the mapping approach to surface hopping (MASH) gives the most consistent agreement with both benchmark dynamics and equilibrium populations. These results establish a benchmark for exciton-cooling dynamics in NCs and clarify the physical regimes in which widely used approximate methods are reliable.

physics.chem-ph↗

arXiv2026

Negative Electronic Friction and Non-Markovianity in Nonequilibrium Quantum Systems

We address the connection between negative electronic friction and non-Markovian effects in the nonadiabatic vibrational dynamics of molecules interacting with metal surfaces under nonequilibrium conditions. We show that a generic nonequilibrium mechanism leading to negative Markovian electronic friction, where molecular vibrations couple directly to inelastic electronic transitions, also introduces significant non-Markovian contributions to the electronic friction. To demonstrate these ideas, we investigate nonequilibrium charge transport through a molecular nanojunction containing a vibrationally coupled donor-acceptor model, where negative electronic friction reflects driving of the vibrational mode beyond standard Joule heating. By comparison to numerically exact, fully quantum hierarchical equations of motion simulations, we verify that these non-Markovian effects have a significant impact on the nonequilibrium dynamics and even on the stability of the resulting Langevin equation.

cond-mat.mes-hall↗

arXiv2026

Vibrational Instabilities in Charge Transport through Molecular Nanojunctions: The Role of Anharmonic Nuclear Potentials

The current-induced vibrational dynamics is a key factor determining the stability of molecular nanojunctions. Beyond conventional Joule heating, a different mechanism caused by nonconservative current-induced forces has been predicted for models with multiple vibrational modes, leading to vibrational instabilities already at low bias voltages. So far, this mechanism has only been investigated in models with harmonic nuclear potentials. Consequently, a natural question is whether this effect can also be observed in more realistic models containing anharmonic nuclear potentials, and, if so, whether it has a measurable impact on observables such as the junction dissociation probability. In this work, we apply a mixed quantum-classical approach based on electronic friction and Langevin dynamics to various anharmonic two-mode systems. By performing Langevin simulations of the vibrational dynamics, we investigate the influence of anharmonicity on instabilities arising from nonconservative forces and the corresponding dissociation dynamics of the junction, as well as steady-state observables, such as the electronic current.

cond-mat.mes-hall↗

arXiv2025

A Haldane-Anderson Hamiltonian Model for Hyperthermal Hydrogen Scattering from a Semiconductor Surface

Collisions of atoms and molecules with metal surfaces create electronic excitations in the metal, leading to nonadiabatic energy dissipation, inelastic scattering, and sticking. Mixed quantum-classical molecular dynamics simulation methods, such as molecular dynamics with electronic friction, are able to capture nonadiabatic energy loss during dynamics at metal surfaces. Hydrogen atom scattering from semiconductors, on the other hand, exhibits strong adsorbate-surface energy transfer only when the projectile kinetic energy exceeds the bandgap of the substrate. Electronic friction fails to describe this effect. Here, we report a first-principles parameterization of a simple Haldane-Anderson Hamiltonian model of hydrogen atom gas-surface scattering on Ge(111)$c(2\times8)$, for which hyperthermal scattering experiments have been reported. We subsequently perform independent-electron surface hopping and Ehrenfest dynamics simulations on this model, and validate these results through numerically exact quantum-dynamical simulations using the hierarchical equation of motion approach. While mean-field dynamics yield weak nonadiabatic energy loss that is independent of the initial kinetic energy, independent electron surface hopping simulations qualitatively agree with the experimental observation that nonadiabatic energy dissipation only occurs if the initial kinetic energy exceeds the bandgap of the surface.

cond-mat.mtrl-sci↗

arXiv2025

Unraveling Exciton Trap Dynamics and Nonradiative Loss Pathways in Quantum Dots via Atomistic Simulations

Surface defects in colloidal quantum dots are a major source of nonradiative losses, yet the microscopic mechanisms underlying exciton trapping and recombination remain elusive. Here, we develop a model Hamiltonian based on atomistic electronic calculations to investigate exciton dynamics in CdSe/CdS core/shell QDs containing a single hole trap introduced by an unpassivated sulfur atom. By systematically varying the defect depth and reorganization energy, we uncover how defect-induced excitonic states mediate energy relaxation pathways. Our simulations reveal that a single localized defect can induce a rich spectrum of excitonic states, leading to multiple dynamical regimes, from slow, energetically off-resonant trapping to fast, cascaded relaxation through in-gap defect states. Crucially, we quantify how defect-induced polaron shifts and exciton-phonon couplings govern the balance between efficient radiative emission and rapid nonradiative decay. These insights clarify the microscopic origin of defect-assisted loss channels and suggest pathways for tailoring QD optoelectronic properties via surface and defect engineering.

physics.chem-ph↗

arXiv2025

Vibrational Instabilities in Charge Transport through Molecular Nanojunctions: The Role of Nonconservative Current-Induced Electronic Forces

Understanding the current-induced vibrational dynamics in molecular nanojunctions is critical for gaining insight into the stability of such systems. While it is well known that Joule heating at higher bias voltages plays an important role for the stability of the nanojunction, a different mechanism caused by current-induced nonconservative forces has been reported to cause vibrational instabilities already at much lower voltages. In this paper, we apply a mixed quantum-classical approach based on electronic friction and Langevin dynamics to a model system for which vibrational instabilities have previously been reported. The electronic friction and other electronic forces can be calculated exactly using nonequilibrium Green's functions. We perform Langevin simulations of the vibrational dynamics to calculate the steady-state vibrational excitation and compare the results to a simplified eigenmode analysis, identifying the parameter regimes in which runaway modes appear.

cond-mat.mes-hall↗

arXiv2025

The Role of Quantum Vibronic Effects in the Spin Polarization of Charge Transport through Molecular Junctions

The connection between molecular vibrations and spin polarization in charge transport through molecular junctions is currently a topic of high interest, with important consequences for a variety of phenomena, such as chirality-induced spin selectivity (CISS). In this work, we follow this theme by exploring the relationship between vibronic dynamics and the corresponding spin polarization of the nonequilibrium charge current in a molecular junction. We employ the hierarchical equations of motion (HEOM) approach, which, since it is numerically exact and treats the vibrational degrees of freedom quantum mechanically, extends previous analyses of similar models that relied on approximate transport methods. We find significant spin polarization of the charge current in the off-resonant, low-voltage regime, where the vibrations must be treated quantum mechanically. Furthermore, we are able to connect the spin polarization in the charge transport to a corresponding polarization of the vibrational dynamics, which manifests itself in the vibrational angular momentum and excitation. Our analysis covers multiple molecule-lead couplings, temperatures, orbital energies, and spin-orbit couplings, demonstrating that the vibrationally assisted spin polarization is robust across a broad range of parameters.

cond-mat.mes-hall↗

arXiv2024

Nonadiabatic Quantum Dynamics of Molecules Scattering from Metal Surfaces

Nonadiabatic coupling between electrons and molecular motion at metal surfaces leads to energy dissipation and dynamical steering effects during chemical surface dynamics. We present a theoretical approach to the scattering of molecules from metal surfaces that incorporates all nonadiabatic and quantum nuclear effects due to the coupling of the molecular degrees of freedom to the electrons in the metal. This is achieved with the hierarchical equations of motion (HEOM) approach combined with a matrix product state representation in twin space. The method is applied to the scattering of nitric oxide from Au(111), for which strongly nonadiabatic energy loss during scattering has been experimentally observed, thus presenting a significant theoretical challenge. Since the HEOM approach treats the molecule-surface coupling exactly, it captures the interplay between nonadiabatic and quantum nuclear effects. Finally, the data obtained by the HEOM approach is used as a rigorous benchmark to assess various mixed quantum-classical methods, from which we derive insights into the mechanisms of energy dissipation and the suitable working regimes of each method.

physics.chem-ph↗

arXiv2024

Influence of Nonequilibrium Vibrational Dynamics on Spin Selectivity in Chiral Molecular Junctions

We explore the role of molecular vibrations in the chirality-induced spin selectivity (CISS) effect in the context of charge transport through a molecular nanojunction. We employ a mixed quantum-classical approach that combines Ehrenfest dynamics for molecular vibrations with the hierarchical equations of motion method for the electronic degrees of freedom. This approach treats the molecular vibrations in a nonequilibrium manner, which is crucial for the dynamics of molecular nanojunctions. To explore the effect of vibrational dynamics on spin selectivity, we also introduce a new figure of merit, the displacement polarization, which quantifies the difference in vibrational displacements for opposing lead magnetizations. We analyze the dynamics of single trajectories, investigating how the spin selectivity depends on voltage and electronic-vibrational coupling. Furthermore, we investigate the dynamics and temperature dependence of ensemble-averaged observables. We demonstrate that spin selectivity is correlated in time with the vibrational polarization, indicating that dynamics of the molecular vibrations is the driving force of CISS in this model within the Ehrenfest approach.

cond-mat.mes-hall↗

arXiv2024

Nonadiabatic Dynamics of Molecules Interacting with Metal Surfaces: Extending the Hierarchical Equations of Motion and Langevin Dynamics Approach to Position-Dependent Metal-Molecule Couplings

Electronic friction and Langevin dynamics is a popular mixed quantum-classical method for simulating the nonadiabatic dynamics of molecules interacting with metal surfaces, as it can be computationally more efficient than fully quantum approaches. Previous approaches to calculating the electronic friction and other forces, however, have been limited to either noninteracting molecular models or position-independent metal-molecule couplings. In this work, we extend the theory of electronic friction within the hierarchical equations of motion formalism to models with a position-dependent metal-molecule coupling. We show that the addition of a position-dependent metal-molecule coupling adds new contributions to the electronic friction and other forces, which are highly relevant for many physical processes. Our expressions for the electronic forces within the Langevin equation are valid both in and out of equilibrium and for molecular models containing strong interactions. We demonstrate the approach by applying it to different models of interest.

physics.chem-ph↗

arXiv2024

Nonadiabatic Dynamics of Molecules Interacting with Metal Surfaces: A Quantum-Classical Approach Based on Langevin Dynamics and the Hierarchical Equations of Motion

A novel mixed quantum-classical approach to simulating nonadiabatic dynamics of molecules at metal surfaces is presented. The method combines the numerically exact hierarchical equations of motion approach for the quantum electronic degrees of freedom with Langevin dynamics for the classical degrees of freedom, namely, low-frequency vibrational modes within the molecule. The approach extends previous mixed quantum-classical methods based on Langevin equations to models containing strong electron-electron or quantum electronic-vibrational interactions, while maintaining a nonperturbative and non-Markovian treatment of the molecule-metal coupling. To demonstrate the approach, nonequilibrium transport observables are calculated for a molecular nanojunction containing strong interactions.

cond-mat.mes-hall↗

arXiv2023

Current-induced forces in nanosystems: A hierarchical equations of motion approach

A new approach to calculating current-induced forces in charge transport through nanosystems is introduced. Starting from the fully quantum mechanical hierarchical equations of motion formalism, a timescale separation between electronic and vibrational degrees of freedom is used to derive a classical Langevin equation of motion for the vibrational dynamics as influenced by current-induced forces, such as the electronic friction. The resulting form of the friction is shown to be equivalent to previously derived expressions. The numerical exactness of the hierarchical equations of motion approach, however, allows the investigation of transport scenarios with strong intrasystem and system-environment interactions. As a demonstration, the electronic friction of three example systems is calculated and analyzed: a single electronic level coupled to one classical vibrational mode, two electronic levels coupled to one classical vibrational mode, and a single electronic level coupled to both a classical and quantum vibrational mode.

cond-mat.mes-hall↗

arXiv2021

Coherent time-dependent oscillations and temporal correlations in triangular triple quantum dots

The fluctuation behavior of triple quantum dots (TQDs) has, so far, largely focused on current cumulants in the long-time limit via full counting statistics. Given that (TQDs) are non-trivial open quantum systems with many interesting features, such as Aharonov-Bohm interference and coherent population blocking, new fluctuating-time statistics, such as the waiting time distribution (WTD), may provide more information than just the current cumulants alone. In this paper, we use a Born-Markov master equation to calculate the standard and higher-order WTDs for coherentlycoupled TQDs arrayed in triangular ring geometries for several transport regimes. In all cases we find that the WTD displays coherent oscillations that correspond directly to individual time-dependent dot occupation probabilities, a result also reported recently in Ref.[1]. Our analysis, however, goes beyond the single-occupancy and single waiting time regimes, investigating waiting time behavior for TQDs occupied by multiple electrons and with finite electron-electron interactions. We demonstrate that, in these regimes of higher occupancy, quantum coherent effects introduce correlations between successive waiting times, which we can tune via an applied magnetic field. We also show that correlations can be used to distinguish between TQD configurations that have identical FCS and that dark states can be tuned with Aharonov-Bohm interference for more complicated regimes than single-occupancy.

cond-mat.mes-hall↗

arXiv2021

Electronic statistics-on-demand: bunching, anti-bunching, positive and negative correlations in a molecular spin-valve

One of the long-standing goals of quantum transport is to use the noise, rather than the average current, for information processing. However, achieving this requires on-demand control of quantum fluctuations in the electric current. In this paper, we demonstrate theoretically that transport through a molecular spin-valve provides access to many different statistics of electron tunneling events. Simply by changing highly tunable parameters, such as electrode spin-polarization, magnetization angle, and voltage, one is able to switch between Poisson behavior, bunching and anti-bunching of electron tunnelings, and positive and negative temporal correlations. The molecular spin-valve is modeled by a single spin-degenerate molecular orbital with local electronic repulsion coupled to two ferromagnetic leads with magnetization orientations allowed to rotate relative to each other. The electron transport is described via Born-Markov master equation and fluctuations are studied with higher-order waiting time distributions. For highly magnetized parallel-aligned electrodes, we find that strong positive temporal correlations emerge in the voltage range where the second transport channel is partially open. These are caused by a spin-induced electron-bunching, which does not manifest in the stationary current alone.

cond-mat.mes-hall↗

arXiv2019

Fluctuating-time and full counting statistics for quantum transport in a system with internal telegraphic noise

Many molecular junctions display stochastic telegraphic switching between two distinct current values, which is therefore an important source of fluctuations in nanoscale quantum transport. We investigate electronic fluctuations arising via Markovian master equations; identifying regions of non-renewal behavior due to telegraphic switching. Non-renewal behavior is characterized by the emergence of correlations between successive first-passage times of detection in one of the leads. Our method of including telegraphic switching is general for any source-molecule-drain setup, but we consider three specific cases. In the first, we model stochastic transitions between an Anderson impurity with and without an applied magnetic field $B$. The last two scenarios couple the electronic level to a single vibrational mode via the Holstein model. We then stochastically switch between two vibrational conformations, with different electron-phonon coupling and vibrational frequency, which corresponds to different molecular conformations. Finally, we model the molecule attaching and detaching from an electrode by switching between two different molecule-electrode coupling strengths. We find, for all three cases, that including the telegraph process in the master equation induces relatively strong positive correlations, with Pearson coefficient $p \approx 0.5$, between successive first-passage times. These correlations only appear, however, when there is telegraphic switching between two significantly different transport scenarios, and we show that it arises from the underlying physics of the model. We also find that, in order for correlations to appear, the switching rate $ν$ must be much smaller than the rate of electron transfer $γ$.

cond-mat.mes-hall↗

arXiv2019

Counting quantum jumps: a summary and comparison of fixed-time and fluctuating-time statistics in electron transport

In quantum transport through nanoscale devices, fluctuations arise from various sources: the discreteness of charge carriers, the statistical non-equilibrium that is required for device operation, and unavoidable quantum uncertainty. As experimental techniques have improved over the last decade, measurements of these fluctuations have become available.} They have been accompanied by a plethora of theoretical literature using many different fluctuation statistics to describe the quantum transport. In this paper, we overview three prominent fluctuation statistics: full counting, waiting time, and first-passage time statistics. We discuss their weaknesses and strengths, and explain connections between them in terms of renewal theory. In particular, we discuss how different information can be encoded in different statistics when the transport is non-renewal, and how this behavior manifests in the measured physical quantities of open quantum systems. All theoretical results are illustrated via a demonstrative transport scenario: a Markovian master equation for a molecular electronic junction with electron-phonon interactions. {{} We demonstrate that to obtain non-renewal behavior, and thus to have temporal correlations between successive electron tunneling events, there must be a strong coupling between tunneling electrons and out-of-equilibrium quantized molecular vibrations.

cond-mat.mes-hall↗

arXiv2019

Non-renewal statistics in quantum transport through the eyes of first-passage and waiting time distributions

The waiting time distribution has, in recent years, proven to be a useful statistical tool for characterising transport in nanoscale quantum transport. In particular, as opposed to moments of the distribution of transferred charge, which have historically been calculated in the long-time limit, waiting times are able to detect non-renewal behaviour in mesoscopic systems. They have failed, however, to correctly incorporate backtunneling events. Recently, a method has been developed that can describe unidirectional and bidirectional transport on an equal footing: the distribution of first-passage times. Rather than the time between successive electron tunnelings, the first-passage refers to the first time the number of extra electrons in the drain reaches $+1$. Here, we demonstrate the differences between first-passage time statistics and waiting time statistics in transport scenarios where the waiting time either cannot correctly reproduce the higher order current cumulants or cannot be calculated at all. To this end, we examine electron transport through a molecule coupled to two macroscopic metal electrodes. We model the molecule with strong electron-electron and electron-phonon interactions in three regimes: (i) sequential tunneling and cotunneling for a finite bias voltage through the Anderson model, (ii) sequential tunneling with no temperature gradient and a bias voltage through the Holstein model, and (iii) sequential tunneling at zero bias voltage and a temperature gradient through the Holstein model. We show that, for each transport scenario, backtunneling events play a significant role; consequently, the waiting time statistics do not correctly predict the renewal and non-renewal behaviour, whereas the first-passage time distribution does.

cond-mat.mes-hall↗

arXiv2018

Distribution of waiting times between electron cotunnelings

In the resonant tunneling regime sequential processes dominate single electron transport through quantum dots or molecules that are weakly coupled to macroscopic electrodes. In the Coulomb blockade regime, however, cotunneling processes dominate. Cotunneling is an inherently quantum phenomenon and thus gives rise to interesting observations, such as an increase in the current shot noise. Since cotunneling processes are inherently fast compared to the sequential processes, it is of interest to examine the short time behaviour of systems where cotunneling plays a role, and whether these systems display nonrenewal statistics. We consider three questions in this paper. Given that an electron has tunneled from the source to the drain via a cotunneling or sequential process, what is the waiting time until another electron cotunnels from the source to the drain? What are the statistical properties of these waiting time intervals? How does cotunneling affect the statistical properties of a system with strong inelastic electron-electron interactions? In answering these questions, we extend the existing formalism for waiting time distributions in single electron transport to include cotunneling processes via an $n$-resolved Markovian master equation. We demonstrate that for a single resonant level the analytic waiting time distribution including cotunneling processes yields information on individual tunneling amplitudes. For both a SRL and an Anderson impurity deep in the Coulomb blockade there is a nonzero probability for two electrons to cotunnel to the drain with zero waiting time inbetween. Furthermore, we show that at high voltages cotunneling processes slightly modify the nonrenewal behaviour of an Anderson impurity with a strong inelastic electron-electron interaction.

cond-mat.mes-hall↗