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Samyak Chakrabarty

Publications and source records attributed to Samyak Chakrabarty.

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MXFormer: A Microscaling Floating-Point Charge-Trap Transistor Compute-in-Memory Transformer Accelerator

The proliferation of Transformer models is often constrained by the significant computational and memory bandwidth demands of deployment. To address this, we present MXFormer, a novel, hybrid, weight-stationary Compute-in-Memory (CIM) accelerator that provides high throughput and efficiency for fixed-model inference on large short-sequence Transformers. Our architecture's foundation is the use of ultra-dense Charge-Trap Transistors (CTTs) in Microscaling MXFP4 CIM arrays, uniquely enabling the on-chip storage of up to hundreds of millions of parameters in Fully Weight Stationary (FWS) fashion. We introduce a statically partitioned design with 12 Transformer blocks connected by a deeply pipelined dataflow. Static-weight layers (MLPs and linear projections) execute on highly parallel analog CTT arrays using an MXFP4-native flow with per-block exponent alignment and a 10-bit SAR ADC. Dynamic computations are handled in fully accurate digital blocks that utilize MXFP-enabled systolic arrays for scaled dot-product attention and vector units for LayerNorm and FlashAttention-style Softmax. By eliminating all weight movement, the deeply pipelined MXFormer architecture yields very high single-stream throughput and efficiency, processing 58275 FPS on ViT-L/32 (dual-chip) or 41269 FPS on ViT-B/16 (single chip). MXFormer outperforms comparable state-of-the-art non-FWS digital, hybrid and photonic Transformer accelerators ~3.3x-60.5x in compute density and ~1.7x-2.5x in energy efficiency. Against FWS accelerators, MXFormer improves compute density by ~20.9x and resident weight storage density by ~2x, while preserving near-digital accuracy (drop of <1%) without any model retraining.

cs.AR

Non-Ideal Program-Time Conservation in Charge Trap Flash for Deep Learning

Training deep neural networks (DNNs) is computationally intensive but arrays of non-volatile memories like Charge Trap Flash (CTF) can accelerate DNN operations using in-memory computing. Specifically, the Resistive Processing Unit (RPU) architecture uses the voltage-threshold program by stochastic encoded pulse trains and analog memory features to accelerate vector-vector outer product and weight update for the gradient descent algorithms. Although CTF, offering high precision, has been regarded as an excellent choice for implementing RPU, the accumulation of charge due to the applied stochastic pulse trains is ultimately of critical significance in determining the final weight update. In this paper, we report the non-ideal program-time conservation in CTF through pulsing input measurements. We experimentally measure the effect of pulse width and pulse gap, keeping the total ON-time of the input pulse train constant, and report three non-idealities: (1) Cumulative V_T shift reduces when total ON-time is fragmented into a larger number of shorter pulses, (2) Cumulative V_T shift drops abruptly for pulse widths < 2 μs, (3) Cumulative V_T shift depends on the gap between consecutive pulses and the V_T shift reduction gets recovered for smaller gaps. We present an explanation based on a transient tunneling field enhancement due to blocking oxide trap-charge dynamics to explain these non-idealities. Identifying and modeling the responsible mechanisms and predicting their system-level effects during learning is critical. This non-ideal accumulation is expected to affect algorithms and architectures relying on devices for implementing mathematically equivalent functions for in-memory computing-based acceleration.

cs.NE