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Sandeep Kumar

Publications and source records attributed to Sandeep Kumar.

At least 163 records · Page 9Linked to original sources

Interplay of single particle and collective response in molecular dynamics simulation of dusty plasma system

Collective response of the plasma medium is well known and has been explored extensively in several contexts. The single particle response is typically treated as collisional interactions leading to dissipative effects. In this manuscript a 2D molecular dynamics (MD) simulation of dusty plasma with Yukawa interactions amidst dust grains have been considered in a strongly coupled regime. It has been shown that disturbances induced in the crystal by introducing highly charged particle elicit both collective and single particle responses. The single particle collisional interaction often generates highly energetic few particles which move with speeds exceeding the acoustic and also the shock velocity (which gets excited by the external moving body inserted in the medium). The dust crystal is observed to crack and deform along the path of these energetic particles. Ultimately as they slow down they excite collective response in the medium. It is thus observed that the medium ahead of the shock gets disturbed by these energetic particles generated by collisional interaction. The trailing shock then sees a disturbed medium. It is thus clear that there is an interesting interplay between the single particle and collective response in the medium which governs the dynamics.

physics.plasm-ph

A performance comparison between \b{eta}-Ga2O3 and GaN High Electron Mobility Transistors

In this letter, we report on the quantitative estimates of various metrics of performance for \b{eta}-Ga2O3 based High Electron Mobility Transistor (HEMT) for radio frequency (RF) and power applications and compare them with III-nitride devices. It is found that despite a lower cut-off frequency, \b{eta}- Ga2O3 HEMT is likely to provide higher RF output power compared to GaN-HEMT in the low-frequency regime although a poor thermal conductivity will impose limitations in heat dissipation. On the other hand, a much lower electron mobility will limit the DC switching performance in terms of efficiency and loss although their blocking voltage can be much higher than in GaN.

physics.app-ph

MBE grown Self-Powered \b{eta}-Ga2O3 MSM Deep-UV Photodetector

We demonstrate self-powered \b{eta}-Ga2O3 deep-UV metal-semiconductor-metal (MSM) photodetectors (PD) with 0.5% external quantum efficiency (EQE) at zero bias. 150 nm thick (-201)-oriented epitaxial \b{eta}-Ga2O3-films were grown on c-plane sapphire using plasma-assisted MBE. Ni/Au and Ti/Au metal stacks were deposited as contacts to achieve asymmetric Schottky barrier heights in interdigitated finger architecture for realizing self-powered photodetectors. Current-voltage characteristics (photo and dark), time-dependent photocurrent and spectral response were studied and compared with conventional symmetric MSM PD with Ni/Au as the Schottky metal contact, fabricated on the same sample. The asymmetric, self-powered devices exhibited solar-blind nature and low dark current < 10 nA at 15 V with high photo-to-dark current ratio of ~ 103. The dark and photocurrents were asymmetric with respect to the applied bias and the responsivity in the forward bias was characterized by gain. The detectors (asymmetric-MSM) were found to exhibit a responsivity of 1.4 mA/W at 255 nm under zero-bias condition (corresponding to an EQE ~ 0.5 %), with a UV-to-Visible rejection ratio ~ 102 and ~105 at 0 V and 5 V respectively.

physics.app-ph

Spin Seebeck effect and thermal spin galvanic effect in Ni80Fe20/p-Si bilayers

The development of spintronics and spin-caloritronics devices need efficient generation, detection and manipulation of spin current. The thermal spin current from spin-Seebeck effect has been reported to be more energy efficient than the electrical spin injection methods. But, spin detection has been the one of the bottlenecks since metals with large spin-orbit coupling is an essential requirement. In this work, we report an efficient thermal generation and interfacial detection of spin current. We measured a spin-Seebeck effect in Ni80Fe20 (25 nm)/p-Si (50 nm) (polycrystalline) bilayers without heavy metal spin detector. The p-Si, having the centosymmetric crystal structure, has insignificant intrinsic spin-orbit coupling leading to negligible spin-charge conversion. We report a giant inverse spin-Hall effect, essential for detection of spin-Seebeck effect, in the Ni80Fe20/p-Si bilayer structure, which originates from Rashba spin orbit coupling due to structure inversion asymmetry at the interface. In addition, the thermal spin pumping in p-Si leads to spin current from p-Si to Ni80Fe20 layer due to thermal spin galvanic effect and spin-Hall effect causing spin-orbit torques. The thermal spin-orbit torques leads to collapse of magnetic hysteresis of 25 nm thick Ni80Fe20 layer. The thermal spin-orbit torques can be used for efficient magnetic switching for memory applications. These scientific breakthroughs may give impetus to the silicon spintronics and spin-caloritronics devices.

cond-mat.mes-hall

Spin driven emergent antiferromagnetism and metal insulator transition in nanoscale p-Si

The entanglement of the charge, spin and orbital degrees of freedom can give rise to emergent behavior especially in thin films, surfaces and interfaces. Often, materials that exhibit those properties require large spin orbit coupling. We hypothesize that the emergent behavior can also occur due to spin, electron and phonon interactions in widely studied simple materials such as Si. That is, large intrinsic spin-orbit coupling is not an essential requirement for emergent behavior. The central hypothesis is that when one of the specimen dimensions is of the same order (or smaller) as the spin diffusion length, then non-equilibrium spin accumulation due to spin injection or spin-Hall effect (SHE) will lead to emergent phase transformations in the non-ferromagnetic semiconductors. In this experimental work, we report spin mediated emergent antiferromagnetism and metal insulator transition in a Pd (1 nm)/Ni81Fe19 (25 nm)/MgO (1 nm)/p-Si (~400 nm) thin film specimen. The spin-Hall effect in p-Si, observed through Rashba spin-orbit coupling mediated spin-Hall magnetoresistance behavior, is proposed to cause the spin accumulation and resulting emergent behavior. The phase transition is discovered from the diverging behavior in longitudinal third harmonic voltage, which is related to the thermal conductivity and heat capacity.

cond-mat.mes-hall

Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si

Spin current experiences minimal dephasing and scattering in Si due to small spin-orbit coupling and spin-lattice interactions is the primary source of spin relaxation. We hypothesize that if the specimen dimension is of the same order as the spin diffusion length then spin polarization will lead to non-equilibrium spin accumulation and emergent phase transition. In n-Si, spin diffusion length has been reported up to 6 μm. The spin accumulation in Si will modify the thermal transport behavior of Si, which can be detected with thermal characterization. In this study, we report observation of spin-Hall effect and emergent antiferromagnetic phase transition behavior using magneto-electro-thermal transport characterization. The freestanding Pd (1 nm)/ Ni80Fe20 (75 nm)/ MgO (1 nm)/ n-Si (2 micron) thin film specimen exhibits a magnetic field dependent thermal transport and spin-Hall magnetoresistance behavior attributed to Rashba effect. An emergent phase transition is discovered using self-heating 3omega method, which shows a diverging behavior at 270 K as a function of temperature similar to a second order phase transition. We propose that spin-Hall effect leads to the spin accumulation and resulting emergent antiferromagnetic phase transition. We propose that the length scale for Rashba effect can be equal to the spin diffusion length and two-dimensional electron gas is not essential for it. The emergent antiferromagnetic phase transition is attributed to the site inversion asymmetry in diamond cubic Si lattice.

cond-mat.mes-hall

Spiral Waves in Driven Dusty Plasma Medium: Generalized Hydrodynamic Fluid Description

Spiral waves are observed in many natural phenomena. They have been extensively represented by the mathematical FitzHugh-Nagumo (FHN) model [Barkley et al., Phys. Rev. A 42, 2489 (1990)] of excitable media. In incompressible fluid simulations also excitation of thermal spiral waves have been reported by Li et al. [Phys. of Fluids 22, 011701 (2010)]. In the present manuscript the spatiotemporal development of spiral waves in the context of weak and strong coupling limits have been shown. While the weakly coupled medium has been represented by a simple fluid description, for the strong coupling a generalized visco - elastic fluid description has been employed. The medium has been driven by an external force in the form of a rotating electric field. It is shown that when the amplitude of force is small the density perturbations in the medium are also small. In this case the excitations do not develop as a spiral wave. Only when the amplitude of force is high so as to drive the density perturbations to nonlinear amplitudes does the spiral density wave formation occur. The role of forcing frequency, the effect of strong coupling and sound velocity of medium on the formation and evolution of spiral waves have been investigated in detail.

physics.plasm-ph

UV Detector based on InAlN/GaN-on-Si HEMT Stack with Photo-to-Dark Current Ratio > 107

We demonstrate an InAlN/GaN-on-Si HEMT based UV detector with photo to dark current ratio > 107. Ti/Al/Ni/Au metal stack was evaporated and rapid thermal annealed for Ohmic contacts to the 2D electron gas (2DEG) at the InAlN/GaN interface while the channel + barrier was recess etched to a depth of 20 nm to pinch-off the 2DEG between Source-Drain pads. Spectral responsivity (SR) of 34 A/W at 367 nm was measured at 5 V in conjunction with very high photo to dark current ratio of > 10^7. The photo to dark current ratio at a fixed bias was found to be decreasing with increase in recess length of the PD. The fabricated devices were found to exhibit a UV-to-visible rejection ratio of >103 with a low dark current < 32 pA at 5 V. Transient measurements showed rise and fall times in the range of 3-4 ms. The gain mechanism was investigated and carrier lifetimes were estimated which matched well with those reported elsewhere.

physics.app-ph

Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon

We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON AlGaN/GaN MISHEMTs for GaN device platforms on Si. A conduction band offset of 1.9 eV is extracted for HfO2/GaN along with a very low density of fixed bulk and interfacial charges. Conductance measurements on HfO2/GaN MOSCAPs reveal an interface trap state continuum with a density of 9.37x1012 eV-1cm-2 centered at 0.48 eV below EC. The forward and reverse current densities are shown to be governed by Fowler-Nordheim tunneling and Poole-Frenkel emission respectively. Normally-ON HfO2/AlGaN/GaN MISHEMTs exhibit negligible shifts in threshold voltage, transconductances of 110mS/mm for 3 μm gate length devices, and three-terminal OFF-state gate leakage currents of 20 nA/mm at a VD of 100 V. Dynamic capacitance dispersion measurements show two peaks at the AlGaN/GaN interface corresponding to slow and fast interface traps with a peak Dit of 5.5x1013 eV-1cm-2 and 1.5x1013 eV-1cm-2 at trap levels 0.55 eV and 0.46 eV below EC respectively. The HfO2/AlGaN interface exhibits a peak Dit of 4.4x1013 eV-1cm- 2 at 0.45 eV below EC.

cond-mat.mtrl-sci

Design and Implementation of Modified Fuzzy based CPU Scheduling Algorithm

CPU Scheduling is the base of multiprogramming. Scheduling is a process which decides order of task from a set of multiple tasks that are ready to execute. There are number of CPU scheduling algorithms available, but it is very difficult task to decide which one is better. This paper discusses the design and implementation of modified fuzzy based CPU scheduling algorithm. This paper present a new set of fuzzy rules. It demonstrates that scheduling done with new priority improves average waiting time and average turnaround time.

cs.OS

Observation of the Korteweg-de Vries soliton in molecular dynamics simulations of a dusty plasma medium

The excitation and evolution of Korteweg-de Vries (KdV) solitons in a dusty plasma medium are studied using Molecular Dynamics (MD) simulations. The dusty plasma medium is modelled as a collection of dust particles interacting through Yukawa potential, which takes into account dust charge screening due to the lighter electron and ion species. The collective response of such screened dust particles to an applied electric field impulse is studied here. An excitation of a perturbed positive density pulse propagating in one direction along with a train of negative perturbed rarefactive density oscillations in the opposite direction is observed. These observations are in accordance with evolution governed by the KdV equation. Detailed studies of (a) amplitude vs. width variation of the observed pulse, (b) the emergence of intact separate pulses with an associated phase shift after collisional interaction amidst them, etc., conclusively qualify the positive pulses observed in the simulations as KdV solitons. It is also observed that by increasing the strength of the electric field impulse, multiple solitonic structures get excited. The excitations of the multiple solitons are similar to the experimental observations reported recently by Boruah et al. [Phys. Plasmas 23, 093704 (2016)] for dusty plasmas. The role of coupling parameter has also been investigated here, which shows that with increasing coupling parameter, the amplitude of the solitonic pulse increases whereas its width decreases.

physics.plasm-ph

Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p-silicon bilayer

In this work, we present an experimental study of spin mediated enhanced negative magnetoresistance in Ni80Fe20 (50 nm)/p-Si (350 nm) bilayer. The resistance measurement shows a reduction of ~2.5% for the bilayer specimen as compared to 1.3% for Ni80Fe20 (50 nm) on oxide specimen for an out-of-plane applied magnetic field of 3T. In the Ni80Fe20-only film, the negative magnetoresistance behavior is attributed to anisotropic magnetoresistance. We propose that spin polarization due to spin-Hall effect is the underlying cause of the enhanced negative magnetoresistance observed in the bilayer. Silicon has weak spin orbit coupling so spin Hall magnetoresistance measurement is not feasible. We use V2ω and V3ω measurement as a function of magnetic field and angular rotation of magnetic field in direction normal to electric current to elucidate the spin-Hall effect. The angular rotation of magnetic field shows a sinusoidal behavior for both V2ω and V3ω, which is attributed to the spin phonon interactions resulting from the spin-Hall effect mediated spin polarization. We propose that the spin polarization leads to a decrease in hole-phonon scattering resulting in enhanced negative magnetoresistance.

cond-mat.mes-hall

Stochastic Multidimensional Scaling

Multidimensional scaling (MDS) is a popular dimensionality reduction techniques that has been widely used for network visualization and cooperative localization. However, the traditional stress minimization formulation of MDS necessitates the use of batch optimization algorithms that are not scalable to large-sized problems. This paper considers an alternative stochastic stress minimization framework that is amenable to incremental and distributed solutions. A novel linear-complexity stochastic optimization algorithm is proposed that is provably convergent and simple to implement. The applicability of the proposed algorithm to localization and visualization tasks is also expounded. Extensive tests on synthetic and real datasets demonstrate the efficacy of the proposed algorithm.

math.OC

Performance Tuning of Hadoop MapReduce: A Noisy Gradient Approach

Hadoop MapReduce is a framework for distributed storage and processing of large datasets that is quite popular in big data analytics. It has various configuration parameters (knobs) which play an important role in deciding the performance i.e., the execution time of a given big data processing job. Default values of these parameters do not always result in good performance and hence it is important to tune them. However, there is inherent difficulty in tuning the parameters due to two important reasons - firstly, the parameter search space is large and secondly, there are cross-parameter interactions. Hence, there is a need for a dimensionality-free method which can automatically tune the configuration parameters by taking into account the cross-parameter dependencies. In this paper, we propose a novel Hadoop parameter tuning methodology, based on a noisy gradient algorithm known as the simultaneous perturbation stochastic approximation (SPSA). The SPSA algorithm tunes the parameters by directly observing the performance of the Hadoop MapReduce system. The approach followed is independent of parameter dimensions and requires only $2$ observations per iteration while tuning. We demonstrate the effectiveness of our methodology in achieving good performance on popular Hadoop benchmarks namely \emph{Grep}, \emph{Bigram}, \emph{Inverted Index}, \emph{Word Co-occurrence} and \emph{Terasort}. Our method, when tested on a 25 node Hadoop cluster shows 66\% decrease in execution time of Hadoop jobs on an average, when compared to the default configuration. Further, we also observe a reduction of 45\% in execution times, when compared to prior methods.

cs.DC

Asynchronous Optimization Over Heterogeneous Networks via Consensus ADMM

This paper considers the distributed optimization of a sum of locally observable, non-convex functions. The optimization is performed over a multi-agent networked system, and each local function depends only on a subset of the variables. An asynchronous and distributed alternating directions method of multipliers (ADMM) method that allows the nodes to defer or skip the computation and transmission of updates is proposed in the paper. The proposed algorithm utilizes different approximations in the update step, resulting in proximal and majorized ADMM variants. Both variants are shown to converge to a local minimum, under certain regularity conditions. The proposed asynchronous algorithms are also applied to the problem of cooperative localization in wireless ad hoc networks, where it is shown to outperform the other state-of-the-art localization algorithms.

math.OC

Parametric Number Covariance in Quantum Chaotic Spectra

We study spectral parametric correlations in quantum chaotic systems and introduce the number covariance as a measure of such correlations. We derive analytic results for the classical random matrix ensembles using the binary correlation method and obtain compact expressions for the co- variance. We illustrate the universality of this measure by presenting the spectral analysis of the quantum kicked rotors for the time-reversal invariant and time-reversal non-invariant cases. A local version of the parametric number variance introduced earlier is also investigated.

quant-ph

A comprehensive lattice-stability limit surface for graphene

The limits of reversible deformation in graphene under various loadings are examined using lattice-dynamical stability analysis. This information is then used to construct a comprehensive lattice-stability limit surface for graphene, which provides an analytical description of incipient lattice instabilities of \textit{all kinds}, for arbitrary deformations, parametrized in terms of symmetry-invariants of strain/stress. Symmetry-invariants allow obtaining an accurate parametrization with a minimal number of coefficients. Based on this limit surface, we deduce a general continuum criterion for the onset of all kinds of lattice-stabilities in graphene: an instability appears when the magnitude of the deviatoric strain $γ$ reaches a critical value $γ^c$ which depends upon the mean hydrostatic strain $\bar {\mathcal E}$ and the directionality $θ$ of the deviatoric stretch. We also distinguish between the distinct regions of the limit surface that correspond to fundamentally-different mechanisms of lattice instabilities in graphene, such as structural vs material instabilities, and long-wave (elastic) vs short-wave instabilities. Utility of this limit surface is demonstrated in assessment of incipient failures in defect-free graphene via its implementation in a continuum Finite Elements Analysis (FEA). The resulting scheme enables on-the-fly assessments of not only the macroscopic conditions (e.g., load; deflection) but also the microscopic conditions (e.g., local stress/strain; spatial location, temporal proximity, and nature of incipient lattice instability) at which an instability occurs in a defect-free graphene sheet subjected to an arbitrary loading condition.

cond-mat.mtrl-sci

Effect of Functionalized CNT on Nematic anchoring

Nematic phase is the most fundamental mesophase exhibited by most of the rod shaped anisotropic liquid crystalline molecules. Nematics are orientationally ordered fluids whose average orientation direction can be manipulated on application of electric and magnetic fields. Carbon nanotube (CNT), a highly shape anisotropic object can find numerous industrial application because of its interesting electronic and mechanical properties. The self-organizing properties of nematics can be used to align CNTs dispersed in them. We have dispersed functionalized CNTs in nematic liquid crystal and carried out many experimental studies. We will present results of electro-optic switching and dielectric measurements on some CNT-LC dispersion. We have observed that addition of functionalized CNTs in a liquid crystal (LC) has led to improvement in the nematic ordering which is evidential from enhancement in dielectric anisotropy (De) measurement. These results indicate that the anchoring energy at alignment layers has been influenced by presence of FCNT in the LC host. The anchoring enhancement can be attributed to p-p electron stacking between the FCNT, LC and the alignment layer.

cond-mat.soft