arXiv subjects

Sandeep Seema Saseendran

Publications and source records attributed to Sandeep Seema Saseendran.

4 recordsLinked to original sources

arXiv2026

A Heterogeneous 200 mm Silicon Nitride Photonics Platform for Visible-to-Near-Infrared Applications via Micro-Transfer Printing

The commercialization of next-generation technologies, including optical interconnects, quantum computing, AR/VR, and medical diagnostics, requires a low-loss photonic platform offering compact, multifunctional systems in the visible and near-infrared range. Although silicon nitride (SiN) is an excellent material due to its ultra-low loss and broad transparency window, integrating active components such as light sources, modulators and photodetectors from diverse material platforms in a scalable, reliable way remains challenging. Micro-transfer printing is an emerging wafer-scale heterogeneous integration technology that can be implemented as a back-end post-processing step without disrupting the primary in-line fabrication process. In this work, we present a dual LPCVD SiN layer platform fabricated in a 200 mm CMOS pilot line, that incorporates micro-transfer printing modules, allowing the integration of active components on well defined recesses. A hydrogenated amorphous silicon layer is also available to increase the versatility of the platform allowing for evanescently-coupled III-V lasers as well as other passive functionality in the near-infrared region. We report full wafer-scale measurements showing low optical SiN losses of 4 dB/cm and 0.23 dB/cm at a wavelength of 488 nm and 940 nm respectively. In addition, a transition loss of only 0.35 dB is obtained from the SiN to the a-Si:H layer, in good agreement with simulated values. Finally, to showcase more advanced functionality, GaAs-based gain sections are micro-transfer printed on several dies, achieving consistent die-to-die lasing at 970 nm with on-chip optical powers of approximately 1 mW. These results showcase the potential of the integrated photonics platform towards unlocking a wide range of new applications in the sub-1-$μ$m spectral region.

physics.optics↗

arXiv2026

Micro-Transfer Printing of Lithium Niobate on 200 mm Silicon Photonics: A High-Speed Heterogeneous Wafer-Scale Platform

The rapid growth of artificial intelligence (AI) and other data center applications is driving the demand for photonic interconnects that combine high-speed with low energy consumption, making scalability a critical requirement. Micro-transfer printing (MTP) has emerged as a promising technique for the wafer-scale heterogeneous integration of thin film lithium niobate (TFLN) onto silicon photonics (SiPho) platforms. Here, we demonstrate heterogeneous SiPho TFLN integration across four full 200 mm wafers with a 3sigma placement accuracy down to 420 nm and a printing yield of larger than 95percentage. Low insertion loss less than 2 dB over 600 phase modulators (300 amplitude modulators) is achieved. A half wave voltage of 4 V in push pull configuration, and high-speed modulation with a bandwith larger than 70 GHz is demonstrated on a subset of tested devices.

physics.optics↗

arXiv2026

Cryogenic piezoelectric effects in thin film strontium titanate devices

Next generation quantum technologies will need to rely on efficient transduction between electrical, optical, and mechanical quantum degrees of freedom to generate large-scale entanglement over large distances. The performance of such transducers is fundamentally limited by the cryogenic properties of the underlying materials. Here, we demonstrate that engineering strain in ferroelectric thin-film strontium titanate ($\mathrm{SrTiO_3}$) not only results in an exceptionally large Pockels coefficient, but also in a robust linear piezoelectric response at cryogenic temperatures, surpassing previous thin-film benchmarks. We measure piezoelectric tensor elements of $d_{15} = 151.8 \pm 1.5$ pm/V and $d_{33} = 54.8 \pm 4$ pm/V, and an effective photoelastic coefficient of $p_{\mathrm{eff}}$ = 0.56 at 5~K. Utilizing these enhanced properties, we demonstrate the first $\mathrm{SrTiO_3}$-on-oxide acousto-optic modulator with a voltage-length product ($V_πL$) of $0.874 \pm 0.084$ V cm, outperforming state-of-the-art unreleased modulators that typically feature a $V_πL$ of a few V cm. Our results establish thin-film $\mathrm{SrTiO_3}$ as a promising material system for integrated quantum photonics operating at cryogenic temperatures.

physics.optics↗

arXiv2025

Engineering high Pockels coefficients in thin-film strontium titanate for cryogenic quantum electro-optic applications

Materials which exhibit the Pockels effect are notable for their strong electro-optic interaction and rapid response times and are therefore used extensively in classical electro-optic components for data and telecommunication applications. Yet many materials optimized for room-temperature operation see their Pockels coefficients at cryogenic temperatures significantly reduced - a major hurdle for emerging quantum technologies which have even more rigorous demands than their classical counterpart. A noted example is $\mathrm{BaTiO_3}$, which features the strongest effective Pockels coefficient at room temperature, only to see it reduced to a third (i.e. $\mathrm{r_{eff}} \approx$ 170 pm/V) at a few Kelvin. Here, we show that this behaviour is not inherent and can even be reversed: Strontium titanate ($\mathrm{SrTiO_3}$), a material normally not featuring a Pockels coefficient, can be engineered to exhibit an $\mathrm{r_{eff}}$ of 345 pm/V at cryogenic temperatures - a record value in any thin-film electro-optic material. By adjusting the stoichiometry, we can increase the Curie temperature and realise a ferroelectric phase that yields a high Pockels coefficient, yet with limited optical losses - on the order of decibels per centimetre. Our findings position $\mathrm{SrTiO_3}$ as one of the most promising materials for cryogenic quantum photonics applications.

physics.optics↗