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Sandip Dhara

Publications and source records attributed to Sandip Dhara.

42 records · Page 3Linked to original sources
arXiv2015

Photoluminescence of oxygen vacancies and hydroxyl group surface functionalized SnO_2 nanoparticles

We report, for the first time, the luminescence property of the hydroxyl group surface functionalized quantum dots (QDs) and nanoparticles (NPs) of SnO_2 using low energy excitations of 2.54 eV (488 nm) and 2.42 eV (514.5 nm). This luminescence is in addition to generally observed luminescence from 'O' defects. The as-prepared SnO_2 quantum dots (QDs) are annealed at different temperatures in ambient conditions to create varied NPs in size. Subsequently, average size of the NPs is calculated from the acoustic vibrations observed at low frequencies in the Raman spectra and by the transmission electron microscopic measurements. Detailed photoluminescence studies with 3.815 eV (325 nm) excitation reveal the nature of in-plane and bridging 'O' vacancies as well as adsorption and desorption occurred at different annealing temperatures. X-ray photoelectron spectroscopy studies also support this observation. Defect level related to the surface -OH functional groups shows a broad luminescence peak around 1.96 eV in SnO_2 NPs which is elaborated with the help of temperature dependent studies.

cond-mat.mtrl-sci↗
arXiv2015

Influence of in-plane and bridging oxygen vacancies of SnO_2 nanostructures on CH_4 sensing at low operating temperatures

Role of 'O' defects in sensing pollutant with nanostructured SnO_2 is not well understood, especially at low temperatures. SnO_2 nanoparticles were grown by soft chemistry route followed by subsequent annealing treatment under specific conditions. Nanowires were grown by chemical vapor deposition technique. A systematic photoluminescence (PL) investigation of 'O' defects in SnO_2 nanostructures revealed a strong correlation between shallow donors created by the in-plane and the bridging 'O' vacancies and gas sensing at low temperatures. These SnO_2 nanostructures detected methane (CH_4), a reducing and green house gas at a low temperature of 50 ^oC. Response of CH_4 was found to be strongly dependent on surface defect in comparison to surface to volume ratio. Control over 'O' vacancies during the synthesis of SnO2 nanomaterials, as supported by X-ray photoelectron spectroscopy and subsequent elucidation for low temperature sensing are demonstrated.

physics.chem-ph↗
arXiv2015

Defect induced structural and thermoelectric properties of Sb2Te3 alloy

Structural and thermoelectric properties of metallic and semiconducting Sb2Te3 are reported. X-Ray diffraction and Raman spectroscopy studies reveal that semiconducting sample have higher defect density. Nature and origin of possible defects are highlighted. Semiconducting Sb2Te3 hosts larger numbers of defects, which act as scattering center and give rise to the increased value of resistivity, thermopower and power factor. Thermopower data indicates p-type nature of the synthesized samples. It is evidenced that the surface states are often mixed with the bulk state, giving rise to metallicity in Sb2Te3. Role of different scattering mechanism on the thermoelectric property of Sb2Te3 is discussed.

cond-mat.mtrl-sci↗
arXiv2007

Bulk ferromagnetism and large changes in photoluminescence intensity by magnetic field in $β$-Ga$_2$O$_3$

In this letter we report observation of room temperature ferromagnetism in bulk Ga$_2$O$_3$ . We also observe large (10-60%) increase/decrease in photoluminescence. In the red(700 nm wavelength)/blue(500 nm), with the application of small magnetic field(0.4 Tesla). We argue, that ferromagnetism occurs entirely due to chains of oxygen(O(3) sites, Fig. 5) vacancies. We propose a simple model to explain, origin and location of moment, formation of ferromagnetic dislocation needles, and strong increase/decrease ofred/blue photoluminescence intensity with magnetic field.

cond-mat.mtrl-sci↗
arXiv2004

Hexagonal-to-Cubic Phase Transformation in GaN Nanowires by Ga+-Implantation

Hexagonal to cubic phase transformation is studied in focused ion beam assisted Ga+-implanted GaN nanowires. Optical photoluminescence and cathodoluminescence studies along with high-resolution transmission electron microscopic structural studies are performed to confirm the phase transformation. In one possibility, sufficient accumulation of Ga from the implanted source might have reduced the surface energy and simultaneously stabilized the cubic phase. Other potential reason may be that the fluctuations in the short-range order induced by enhanced dynamic annealing (defect annihilation) with the irradiation process stabilize the cubic phase and cause the phase transformation.

cond-mat.mtrl-sci↗