arXiv subjects

Sandra Santhosh

Publications and source records attributed to Sandra Santhosh.

6 recordsLinked to original sources

arXiv2026

Successful growth of low carrier density $\alpha$-In$_2$Se$_3$ single crystals using Se-flux in a modified Bridgman furnace

Indium selenide (In$_2$Se$_3$) has garnered significant attention for its intriguing properties and applications in batteries, solar cells, photodetectors and ferroelectric devices. However, the controlled synthesis of single phase $\alpha$-In$_2$Se$_3$ remains challenging owing to its complex phase diagram, presence of multiple polymorphs and the high volatility of selenium that induces non-stoichiometry and unintentional carrier doping. For ferroelectric {\alpha}-In2Se3, minimizing the carrier density is essential because leakage current can obscure polarization switching. Here, we report the growth of $\alpha$-In$_2$Se$_3$ single crystals using a unique approach, the Se-flux assisted modified vertical Bridgman technique combined with liquid encapsulation under high pressure. This approach creates a high-pressure, Se-rich environment that effectively minimizes Se-vaporization. Structural and compositional analysis using X-ray diffraction, transmission electron microscopy and energy-dispersive X-ray spectroscopy confirm the formation of pure $\alpha$-In$_2$Se$_3$ single crystals with 3R stacking. Furthermore, the crystals exhibit remarkably low carrier density of 1.5-3.2 $\times$ 10$^{16}$ cm$^{-3}$ at 300K$-$the lowest reported to date, reflecting a significant suppression of Se-vacancies relative to the conventional Bridgman or melt-grown crystals. Through transport and ARPES measurements on different batches of crystals, we also demonstrate that the amount of Se-flux plays a crucial role in controlling Se-vacancies. Our results thus establish this modified Bridgman method as an effective strategy for synthesizing large $\alpha$-In$_2$Se$_3$ single crystals with reduced intrinsic defects. This technique can be broadly applied to grow other volatile chalcogenides with reduced defects and controlled stoichiometry.

cond-mat.mtrl-sci↗

arXiv2025

Examining the Spin Structure of Altermagnetic Candidate MnTe Grown with Near Ideal Stoichiometry

Altermagnets are a recently-discovered class of materials with magnetic ordering that have a zero net magnetization and a momentum-dependent spin splitting in their band structure, arising from a collinear spin arrangement with alternating polarizations in the crystal lattice. The nickeline-structured manganese telluride ({\alpha}-MnTe) is an attractive altermagnet candidate due to its predicted large spin splitting energy and a transition temperature near 300K. In this work, we present a thorough investigation of the spin structure of {\alpha}-MnTe thin films grown by molecular beam epitaxy with very high crystal quality and low residual magnetization. The epitaxial {\alpha}-MnTe films have a full-width-at-half-maximum of 0.1{\deg} as measured by x-ray-diffraction rocking curves and a root-mean-square roughness below 1 nm. Neutron diffraction measurements confirm the antiferromagnetic order in the {\alpha}-MnTe film and show a N\'eel temperature of 307 K. Polarized neutron reflectometry detects a vanishingly small net magnetization which may be confined to the MnTe/InP interface, highlighting the near-ideal stoichiometry in the sample. In vacuo angle resolved photoemission spectroscopy reveals that the bulk band spectrum of the MnTe films is consistent with the weak altermagnetic order as theoretically predicted and observed for the high symmetry nodal plane in the center of the Brillouin zone. This study establishes optimized growth conditions for the synthesis of stoichiometric {\alpha}-MnTe thin films which exhibit exceptional structural and magnetic ordering, thereby providing a robust platform for the precise characterization of their altermagnetic properties.

cond-mat.mtrl-sci↗

arXiv2025

Altermagnetic band splitting in 10 nm epitaxial CrSb thin films

Altermagnets are a newly identified family of collinear antiferromagnets with momentum-dependent spin-split band structure of non-relativistic origin, derived from spin-group symmetry-protected crystal structures. Among candidate altermagnets, CrSb is attractive for potential applications because of a large spin-splitting near the Fermi level and a high Neel transition temperature of around 700 K. We use molecular beam epitaxy to synthesize CrSb (0001) thin films with thicknesses ranging from 10 nm to 100 nm. Structural characterization, using reflection high energy electron diffraction, scanning transmission electron microscopy, and X-ray diffraction, demonstrates the growth of epitaxial films with good crystallinity. Polarized neutron reflectometry shows the absence of any net magnetization, consistent with antiferromagnetic order. In vacuo angle resolved photoemission spectroscopy (ARPES) measurements probe the band structure in a previously unexplored regime of film thickness, down to 10 nm. These ARPES measurements show a three-dimensional momentum-dependent band splitting of up to 0.7 eV with g-wave symmetry, consistent with that seen in prior studies of bulk single crystals. The distinct altermagnetic band structure required for potential spin-transport applications survives down to the 10 nm thin film limit at room temperature.

cond-mat.mtrl-sci↗

arXiv2025

Emergent superconductivity and non-reciprocal transport in a van der Waals Dirac semimetal/antiferromagnet heterostructure

We investigate emergent superconductivity and non-reciprocal transport (magnetochiral anisotropy, superconducting diode effect) at the heterointerface of two non-superconducting van der Waals (vdW) materials, the Dirac semimetal ZrTe$_2$ and the antiferromagnetic iron chalcogenide FeTe, grown using molecular beam epitaxy. We show from electrical transport measurements that two-dimensional (2D) superconductivity arises at the heterointerface below a critical temperature $T_c \sim 10$~K. In the superconducting transition region, non-reciprocal transport, characterized by the magneto-chiral anisotropy, exhibits a magnitude comparable to that observed in topological insulators, and is enhanced by a factor of three when the heterostructure is capped with a 2D vdW ferromagnet (CrTe$_2$). Below $T_c$, the superconducting diode effect exhibits an efficiency of 29\%. With strong spin-orbit coupling in ZrTe$_2$, these epitaxial heterostructures provide an attractive epitaxial vdW platform for exploring unconventional superconductivity in Dirac semimetals and for developing non-reciprocal devices for superconducting electronics.

cond-mat.supr-con↗

arXiv2025

Charge to spin conversion in atomically thin bismuth

We report charge to spin conversion in a hybrid heterostructure comprised of atomically thin bismuth (Bi) confined between a silicon carbide (SiC) substrate and epitaxial graphene (EG). We confirm composition, dimensionality, and a 96.5 \% intercalation coverage using X-ray photolectron spectroscopy, scanning transmission microscopy, low energy electron diffraction, and Raman spectroscopy. Electrical transport measurements show signs of weak antilocalization in the heterostructure, consistent with spin-orbit coupling in this hybrid heterostructure. Spin torque ferromagnetic resonance measurements in permalloy/EG/2D-Bi heterostructures probe charge-to-spin conversion and revealing that an in plane polarization of the spin current, perpendicular to the charge current. The ratio of the in-plane to out-of-plane torque is 3.75 times higher than in hydrogenated graphene control samples.

cond-mat.mes-hall↗

arXiv2023

Spin Hall conductivity in Bi$_{1-x}$Sb$_x$ as an experimental test of bulk-boundary correspondence

Bulk-boundary correspondence is a foundational principle underlying the electronic band structure and physical behavior of topological quantum materials. Although it has been rigorously tested in topological systems where the physical properties involve charge currents, it remains unclear whether bulk-boundary correspondence should also hold for non-conserved spin currents. We study charge-to-spin conversion in a canonical topological insulator, Bi$_{1-x}$Sb$_x$, to address this fundamentally unresolved question. We use spin-torque ferromagnetic resonance measurements to accurately probe the charge-to-spin conversion efficiency in epitaxial Bi$_{1-x}$Sb$_x$~thin films of high structural quality spanning the entire range of composition, including both trivial and topological band structures, as verified using {\it in vacuo} angle-resolved photoemission spectroscopy. From these measurements, we deduce the effective spin Hall conductivity (SHC) and find excellent agreement with the values predicted by tight-binding calculations for the intrinsic SHC of the bulk bands. These results provide strong evidence that the strong spin-orbit entanglement of bulk states well below the Fermi energy connects directly to the SHC in epitaxial Bi$_{1-x}$Sb$_x$~films interfaced with a metallic ferromagnet. The excellent agreement between theory and experiment points to the generic value of analyses focused entirely on bulk properties, even for topological systems involving non-conserved spin currents.

cond-mat.mes-hall↗