SearcharxivSearch

arXiv subjects

Sangheon Kim

Publications and source records attributed to Sangheon Kim.

2 recordsLinked to original sources

Selective coupling of high-order phonons in La2-xSrxCuO4

In crystals and molecules with strong coupling between the charge carriers and atomic vibrations, high order harmonics of the vibrational excitations can be observed with intensity following the Franck-Condon envelope. Here, we uncover a new regime of electron-phonon coupling in La2-xSrxCuO4 using resonant inelastic X-ray scattering. In the undoped compound, we find sharp peaks at approximately 85$\pm$5 meV, 180$\pm$7 meV, and 330$\pm$5 meV with no observable dispersion, and an absence of appreciable intensity from other modes observed in Raman spectroscopy in this energy range. The 180 meV and 330 meV excitations have energies approximately consistent with two-phonon and four-phonon in-plane Cu-O bond stretching mode, suggesting that the resonantly excited valence electrons strongly couple to this mode. These excitations exhibit significant doping dependence, eventually becoming unresolvable at 10% hole doping, where the low energy charge excitations are dominated by dispersive plasmons. The observation of selective coupling to even-ordered phonons and stark contrast with the Raman spectra indicate anomalous electron-phonon coupling beyond the Franck-Condon picture. One intriguing possibility is the existence of locally paired quasiparticles in insulating cuprates.

cond-mat.str-el

Investigation of the mechanism of the anomalous Hall effects in Cr2Te3/(BiSb)2(TeSe)3 heterostructure

The interplay between ferromagnetism and the non-trivial topology has unveiled intriguing phases in the transport of charges and spins. For example, it is consistently observed the so-called topological Hall effect (THE) featuring a hump structure in the curve of the Hall resistance (Rxy) vs. a magnetic field (H) of a heterostructure consisting of a ferromagnet (FM) and a topological insulator (TI). The origin of the hump structure is still controversial between the topological Hall effect model and the multi-component anomalous Hall effect (AHE) model. In this work, we have investigated a heterostructure consisting of BixSb2-xTeySe3-y (BSTS) and Cr2Te3 (CT), which are well-known TI and two-dimensional FM, respectively. By using the so-called minor-loop measurement, we have found that the hump structure observed in the CT/BSTS is more likely to originate from two AHE channels. Moreover, by analyzing the scaling behavior of each amplitude of two AHE with the longitudinal resistivities of CT and BSTS, we have found that one AHE is attributed to the extrinsic contribution of CT while the other is due to the intrinsic contribution of BSTS. It implies that the proximity-induced ferromagnetic layer inside BSTS serves as a source of the intrinsic AHE, resulting in the hump structure explained by the two AHE model.

cond-mat.mtrl-sci