arXiv subjects

Sanghun Jeon

Publications and source records attributed to Sanghun Jeon.

3 recordsLinked to original sources

arXiv2025

Vertical NAND in a Ferroelectric-driven Paradigm Shift

Over the past decades, the relentless scaling and mass production of flash memory have underpinned the data-centric era. Yet charge-trap-based 3D NAND flash is now constrained by intrinsic physical and architectural limits, including reliability degradation at the device level, high operating power at the array level, and vertical scaling saturation at the system level. These bottlenecks hinder further advances in storage density and energy efficiency required by memory-centric computing. This Perspective outlines how coupling ferroelectric polarization with charge trapping can reconfigure the foundations of flash memory. In these hybrid architectures, polarization offers an energy-efficient pathway for charge modulation through enhanced Fowler-Nordheim tunneling, while trapped charges reinforce polarization-driven states to ensure stability. Such synergistic dynamics enable low-voltage operation and integration beyond one thousand layers without compromising process compatibility. We discuss the material, device, and architectural transitions required to realize this hybrid technology and chart future research directions to overcome the remaining scaling bottlenecks. Hybrid ferroelectric NAND extends conventional flash toward a scalable and energy-efficient platform, marking a paradigm shift for next-generation non-volatile memory.

physics.app-ph↗

arXiv2023

Effect of Annealing Temperature on Minimum Domain Size of Ferroelectric Hafnia

Here, we optimized the annealing temperature of HZO/TiN thin film heterostructure via multiscale analysis of remnant polarization, crystallographic phase, minimum ferroelectric domain size, and average grain size. We found that the remnant polarization was closely related to the relative amount of the orthorhombic phase whereas the minimum domain size was to the relative amount of the monoclinic phase. The minimum domain size was obtained at the annealing temperature of 500$^\cird$C while the optimum remnant polarization and capacitance at the annealing temperature of 600$^\circ$C. We conclude that the minimum domain size is more important than the sheer magnitude of remnant polarization considering the retention and fatigue of switchable polarization in nanoscale ferroelectric devices. Our results are expected to contribute to the development of ultra-low-power logic transistors and next-generation non-volatile memory devices.

physics.app-ph↗

arXiv2015

Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory

We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10^5. The origin of NPC is attributed to the depletion of conduction channels by light assisted hot electron trapping, supported by gate voltage threshold shift and wavelength dependent photoconductance measurements. Scanning photocurrent microscopy excludes the possibility that NPC originates from the NW/metal contacts and reveals a competing positive photoconductivity. The conductivity recovery after illumination substantially slows down at low temperature, indicating a thermally activated detrapping mechanism. At 78 K, the spontaneous recovery of the conductance is completely quenched, resulting in a reversible memory device which can be switched by light and gate voltage pulses. The novel NPC based optoelectronics may find exciting applications in photodetection and nonvolatile memory with low power consumption.

cond-mat.mes-hall↗