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Sanjoy Kr Mahatha

Publications and source records attributed to Sanjoy Kr Mahatha.

10 recordsLinked to original sources

Magnetically coupled charge-transport crossover and giant negative magnetoresistance in iodine-incorporated Cr$_2$Se$_3$

We report the synthesis and comprehensive investigation of iodine-incorporated $Cr_2Se_3$, a non-van der Waals quasi-two-dimensional magnetic material, using structural, magnetic, transport, spectroscopic, and first-principles methods. Magnetization and electron spin resonance measurements reveal an antiferromagnetically ordered state below $T_N \approx 52$ K. At higher temperatures, a second, broader anomaly emerges near $T^* \approx 150$ K, coinciding with a shallow minimum in the temperature-dependent resistivity that resembles a metal-to-insulator-like crossover. Hall measurements indicate predominantly hole-like conduction at high temperatures ($\geq$ 150 K), while the nonlinear Hall response below T*, together with an anomaly in the third-harmonic electrical signal, suggests the emergence of mobility-dependent multichannel and spatially inhomogeneous transport. A large, non-saturating negative magnetoresistance reaching approximately -78\% at 25 K and 12 T further demonstrates strong coupling between charge transport and the magnetic state. Temperature-dependent Raman spectroscopy reveals no symmetry-changing structural transition near T*, whereas angle resolved photoemission spectroscopy (ARPES) measurements show no major reconstruction of the electronic structure occupied across the crossover. Taken together, these results identify the high-temperature anomaly as a broad magnetically coupled transport crossover arising from the interplay of short-range magnetic correlations, chemical disorder, and redistribution among competing conduction channels. These findings demonstrate that anion incorporation provides an effective route to tuning the coupled electronic and magnetic properties of non-layered Cr$_2$Se$_3$, establishing this system as a promising platform for investigating correlated transport and emergent spintronic functionalities in transition-metal chalcogenides.

cond-mat.mtrl-sci↗

In-Plane Anisotropy-Driven Directional Charge Transport in van der Waals p-n Heterojunction

Low-symmetry two-dimensional (2D) van der Waals (vdW) materials enable anisotropic charge transport, crucial for polarization-sensitive optoelectronics. In this study, a $p$-GeS/$n$-MoS$_2$ heterostructure diode is investigated, where the anisotropic band dispersion of GeS, revealed by angle-resolved photoemission spectroscopy (ARPES), governs directional charge flow. Angle-resolved Raman spectroscopy confirms the crystallographic orientation, and transport measurements in GeS field-effect transistors (FETs) show a mobility anisotropy of $\sim 3.4$. The heterojunction exhibits orientation-dependent diode characteristics, anti-ambipolar transport, and a type-II band alignment, leading to anisotropic optoelectronic response. These findings establish a pathway for utilizing electronic anisotropy in vdW heterostructures for energy-efficient rectification.

cond-mat.mes-hall↗

Percolative Instabilities and Sparse-Limit Fractality in 1T-TaS$_2$

The low-temperature metallic phase of 1T-TaS2 may originate from current- and voltage-driven destabilization of the commensurate charge density wave (CDW) in a strongly correlated Mott insulator, alongside the robust yet rarely realized influence of intrinsic electronic distortions. Electrical pulse-driven transport, combined with second harmonic response, reveals abrupt switching, negative differential resistance (NDR), and multiscale domain-wall reorganization. The free energy analysis identifies a critical order parameter threshold for the Mott-metal transition, with scaling exponents (β approx 1.3) consistent with 2D percolation. The sparse limit fractal dimension D_{f} approx 0.3 at 10 K, rising to approx 0.9 at 300 K, reflects the hierarchical evolution of the conductive pathways throughout the temperature. These findings establish a direct connection between fractal percolation, pulse-induced instabilities, and correlated electron transport, offering a framework for controlled access to non-equilibrium phase transitions in low-dimensional quantum materials.

cond-mat.mes-hall↗

Femtosecond concerted rotation of molecules on a 2D material interface

Interfaces between molecules and 2D materials exhibit energy-driven functionalities, wherein charge transfer directs molecular motion. Unlike equilibrium systems, where molecular assemblies settle into static configurations, continuous energy input can drive transient, collective molecular rearrangements. Here, we reveal ultrafast spectroscopic fingerprints of a collective rotational response of molecules on a 2D material following photoexcitation. Our results suggest that photoinduced charge transfer reshapes the interfacial energy potential, giving rise to macroscopic, unidirectional molecular rotation and the formation of a homochiral molecular arrangement. Using a multiplexed ultrafast photoemission spectroscopy approach, we simultaneously track, electronic states, atomic positions, and orbital wavefunctions with femtosecond and sub-ångström resolution. Multimodal valence and core electron emission analysis disentangles the intertwined electronic-structural dynamics of the molecule and the 2D material, revealing the dynamic modulation of charge distribution and intermolecular forces that drive collective molecular motion. Our findings open a pathway for designing energy-driven molecular systems with tunable interfacial dynamics, with potential applications in chiral engineering and active matter systems.

cond-mat.mtrl-sci↗

Probing the magnetic ground state and magnetoelastic coupling in double perovskite ruthenate: Ca2ScRuO6

Ruthenates, materials with a single magnetic Ruthenium (Ru) atom, often display an exotic array of ground states ranging from superconductivity to altermagnetism. In this work, we investigated the magnetic ground state of a least explored member of the 4d3 double perovskite ruthenate series A2ScRuO6 (A = Ca, Sr, Ba): Ca2ScRuO6. Interestingly, temperature-dependent bulk susceptibility curve shows ferrimagnetic-like behaviour above the magnetic ordering at around 40 K, which were corroborated by the identification of the mixed valence states, Ru5+ and Ru4+ via X-ray absorption spectroscopy. Structural analysis further revealed atomic-site exchange between the Ru and Sc sites, which results in the Ru mixed valence states. Neutron powder diffraction measurements detected the presence of magnetic Bragg peaks at a low temperature near 4 K and a moderate magnetoelastic coupling near the ordering temperature of 40 K. However, the corresponding symmetry analysis shows a weak Type I antiferromagnetic ground state with a reduced magnetic moment of 1.1μB/Ru atom. Our findings establish an unusual magnetic ground state in the Mott insulating Ca2ScRuO6, where a long range ordered antiferromagnet coexists with small magnetic clusters, which manifests a ferrimagnetic-like high temperature inverse magnetic susceptibility. This system presents a unique platform to study long-range magnetic order in the presence of antisite disorder.

cond-mat.str-el↗

Dimensional crossover and emergence of novel phases in puckered PdSe$_2$ under pressure

We investigate the pressure-driven structural and electronic evolution of PdSe\(_2\) using powder X-ray diffraction, Raman spectroscopy, and first-principles calculations. Beyond 2.3 GPa, suppression of the Jahn-Teller distortion induces in-plane lattice expansion and metallization. Around 4.8 GPa, the interlayer \(d_{z^2}-π^*\) orbital hybridization drives the dimensional crossover, facilitating the transformation from the 2D distorted to a 3D undistorted pyrite phase. At $\sim$ 9 GPa, a novel phase emerges, characterized by octahedral distortions in the $d$ orbitals of Pd. Structural analysis suggests the presence of marcasite (\(Pnnm\)) or arsenopyrite (\(P2_1/c\)) phase with orthorhombic and monoclinic configurations, respectively. Furthermore, the observed phonon anomaly and electronic structure modifications, including the emergence of flat bands in the high-pressure phases, elucidate the fundamental mechanisms underlying the previously reported exotic superconductivity with an enhanced critical temperature. These results highlight the pivotal role of dimensional crossover and structural transitions in tuning the electronic properties of puckered materials, providing pathways for novel functionalities.

cond-mat.mtrl-sci↗

Isostructural phase transition in Tb2Ti2O7 under pressure and temperature: Insights from synchrotron X-ray diffraction

Tb2Ti2O7, a pyrochlore system, has garnered significant interest due to its intriguing structural and physical properties and their dependence on external physical parameters. In this study, utilizing high-brilliance synchrotron X-ray diffraction, we conducted a comprehensive investigation of structural evolution of Tb2Ti2O7 under external pressure and temperature. We have conclusively confirmed the occurrence of an isostructural phase transition beyond the pressure of 10 GPa. The transition exhibits a distinct signature in the variation of lattice parameters under pressure and leads to changes in mechanical properties. The underlying physics driving this transition can be understood in terms of localized rearrangement of atoms while retaining the overall cubic symmetry of the crystal. Notably, the observed transition remains almost independent of temperature. Our findings provide insights into the distinctive behaviour of the isostructural phase transition in Tb2Ti2O7.

cond-mat.mtrl-sci↗

Plasmonic polarons induced by alkali-atom deposition in hafnium disulfide (1$T$-HfS$_2$)

We combine ab-initio calculations based on many-body perturbation theory and the cumulant expansion with angle-resolved photoemission spectroscopy (ARPES) to quantify the electron-plasmon interaction in the highly-doped semiconducting transition metal dichalcogenide 1$T$-HfS$_2$. ARPES reveals the emergence of satellite spectral features in the vicinity of quasiparticle excitations at the bottom of the conduction band, suggesting coupling to bosonic excitations with a characteristic energy of 200 meV. Our first-principles calculations of the photoemission spectral function reveal that these features can be ascribed to electronic coupling to carrier plasmons (doping-induced collective charge-density fluctuations). We further show that reduced screening at the surface enhances the electron-plasmon interaction and is primarily responsible for the emergence of plasmonic polarons.

cond-mat.str-el↗

Tunable Electron Transport in Defect-Engineered PdSe$_\mathrm{2}$

Tuning the ambipolar behavior in charge carrier transport via defect-engineering is crucial for achieving high mobility transistors for nonlinear logic circuits. Here, we present the electric-field tunable electron and hole transport in a microchannel device consisting of highly air-stable van der Waals (vdW) noble metal dichalcogenide (NMDC), PdSe$_\mathrm{2}$, as an active layer. Pristine bulk PdSe$_\mathrm{2}$ constitutes Se surface vacancy defects created during the growth or exfoliation process and offers an ambipolar transfer characteristics with a slight electron dominance recorded in field-effect transistor (FET) characteristics showing an ON/OFF ratio < 10 and electron mobility ~ 21 cm$^2$/V.s. However, transfer characteristics of PdSe$_\mathrm{2}$ can be tuned to a hole-dominated transport while using hydrochloric acid (HCl) as a $p$-type dopant. On the other hand, the chelating agent EDTA, being a strong electron donor, enhances the electron-dominance in PdSe$_\mathrm{2}$ channel. In addition, $p$-type behavior with a 100 times higher ON/OFF ratio is obtained while cooling the sample down to 10 K. Low-temperature angle-resolved photoemission spectroscopy resembles the $p$-type band structure of PdSe$_\mathrm{2}$ single crystal. Also, first principle density functional theory calculations justify the tunability observed in PdSe$_\mathrm{2}$ as a result of defect-engineering. Such a defect-sensitive ambipolar vdW architecture may open up new possibilities towards future CMOS (Complementary Metal-Oxide-Semiconductor) device fabrications and high performance integrated circuits.

cond-mat.mes-hall↗

Fourier-based methods for removing mesh anomalies from angle resolved photoemission spectra

Recent improvements to spatial resolution in angle-resolved photo-emission spectroscopy (ARPES) have made it common to perform measurements with a very brief dwell time, for the purpose of mapping the spectral function over large surface regions. However, rapid measurement modalities can suffer a grid-like intensity modulation due to a wire mesh that is typically placed in front of the ARPES detector to block stray electrons. Here, we explore Fourier-based methods that can effectively remove this artifact, and improve the quality of ARPES images obtained in rapid scanning modes. An open source software package is provided containing implementations of demonstrated algorithms.

cond-mat.mtrl-sci↗