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Sanskar Mishra

Publications and source records attributed to Sanskar Mishra.

3 recordsLinked to original sources

Pressure induced electronic band evolution and observation of superconductivity in the Dirac semimetal ZrTe5

We report a comprehensive investigation of the pressure effects on the magnetotransport properties of the topological material ZrTe5 within 1 to 8 GPa pressure range. With increasing pressure, the characteristic peak (Tp) in its electrical resistivity first shifts to higher temperature and then moves quickly towards the lower temperature before disappearing eventually at 6 GPa. Beyond 6 GPa, the system exhibits metallic behavior across the entire temperature range, and superconductivity emerges below Tc = 1.8 K at 8 GPa. Based on the systematic magnetotransport measurement under pressure, we demonstrate that the superconductivity occurs following a significant electronic structure modulation possibly due to pressure induced structural changes near 6 GPa, which coincides with dramatic enhancement of the magnetoresistance (MR) reaching up to 1400 percent. Our experimental results are substantiated by density functional theory calculations as the application of pressure drastically alters the density of states near the Fermi level. Notably, multiple hole pockets emerge at the Fermi level from 4 GPa onward, and their contributions are further enhanced with increasing pressure. The combined experimental and theoretical investigation reveals a comprehensive evolution of electronic structure of Dirac semimetal ZrTe5 under pressure and suggest a possible link between the Fermi surface reconstruction in the pressure range of structural transition and emergence of superconductivity

cond-mat.mtrl-sci

Effect of pressure on the transport properties and thermoelectric performance of Dirac semimetal ZrTe5

In this study, we have investigated and compared the effect of hydrostatic pressure up to ~20 kbar on the transport properties of ZrTe5 single crystals grown by chemical vapor transport (CVT) and flux methods. With the application of pressure, the electrical resistivity Rho(T) and thermopower S(T) of both crystals were found to increase in the whole temperature range unlike the other known thermoelectric materials, such as Bi2Te3, SnSe etc. This observation is supported by the complementary first-principles band structure calculation as the application of pressure widens the direct bandgap at Γ point. Moreover, the analysis of the pressure dependent magneto-transport and Shubnikov de-Hass oscillation results revealed an increase in carrier concentration and effective mass along with the reduction of mobility as pressure rises. Furthermore, with the application of pressure, the flux-grown ZrTe5 crystals display a transition from unipolar to bipolar charge transport as evidenced by the emergence of resistivity peak at T* under high pressure, unlike the CVT-grown ZrTe5 crystals where the bipolar charge transport near its characteristic resistivity peak (Tp) remains unaffected.

cond-mat.mtrl-sci

Effect of antisite disorder on the magnetic and transport properties of a quaternary Heusler alloy

Spin gapless semiconductors based Heusler alloys are the special class of materials due to their unique band structure, high spin polarization and high Curie temperature. These materials exhibit a distinct electronic structure: a nonzero band gap in one spin channel while the other spin channel remains gapless, making them highly suitable for tunable spintronics. In this study, a comprehensive analysis of structural, magnetic, thermoelectric, and transport properties of the quaternary Heusler alloy CoFeMnSn is conducted. X-ray diffraction and Neutron diffraction analyses confirm a well ordered structure with partial antisite disorder between Co, Fe and Mn, Sn atoms. Magnetic studies show that the material exhibits room-temperature ferromagnetism, with a Curie temperature of around 660 K. Notably, we observe an anomalous Hall effect linked to intrinsic mechanisms driven by Berry curvature, underscoring the intricate relationship between structural disorder and electronic behavior. Transport measurements also highlight the impact of antisite disorder on the systems, with resistivity decreasing as temperature increases. These insights position CoFeMnSn as a promising material for future spintronic devices and advanced technological applications.

cond-mat.mtrl-sci