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Santos F. Alvarado

Publications and source records attributed to Santos F. Alvarado.

3 recordsLinked to original sources

Charge-to-spin conversion in epitaxial and polycrystalline Bi and Bi/Ag layers

Bi is predicted to be an efficient generator of spin-orbit torques (SOTs), with charge-to-spin conversion efficiency comparable to those of prototypical heavy metals, such as Ta, W, and Pt. However, experimental reports provide widely scattered interconversion efficiencies, while the origin of the large conversion signal in Bi/Ag bilayers remains controversial. Here, we investigate charge-to-spin conversion in epitaxial and polycrystalline Bi-based magnetic heterostructures by measuring the damping-like SOT using magneto-optic Kerr effect magnetometry, complemented by structural and spectroscopic analyses and harmonic Hall resistance measurements. We show that inserting an Ag spacer between Bi(001) and metallic ferromagnets (FeCo or Ni) enhances the SOT efficiency by more than one order of magnitude, reaching an effective spin Hall conductivity of approximately $2 \times 10^5 (\hbar/2e)$ S/m, in excellent agreement with theoretical expectations for bulk Bi. This enhancement can be consistently explained by the preservation of the structural and chemical integrity of Bi, otherwise compromised by the direct deposition of a ferromagnetic overlayer, rather than by Rashba spin-orbit coupling at the Bi/Ag interface. Comparative studies across epitaxial, polycrystalline, and intentionally surface-oxidized Bi films, beyond oxygen doses known to destroy Bi(001) surface states, reveal that structural disorder has a negative impact on the SOT efficiency and indicate a dominant bulk contribution to spin-current generation in Bi/Ag heterostructures, yielding an effective Bi spin Hall angle of approximately 1. By establishing a direct correlation between atomic-scale integrity and charge-to-spin conversion, this study provides design principles to improve the reliability of Bi-based SOT devices and offers a robust framework for interpreting spin-charge interconversion in Bi and Bi/Ag systems.

cond-mat.mtrl-sci↗

Unidirectional spin Hall magnetoresistance in ferromagnet/normal metal bilayers

Magnetoresistive effects are usually invariant upon inversion of the magnetization direction. In noncentrosymmetric conductors, however, nonlinear resistive terms can give rise to a current dependence that is quadratic in the applied voltage and linear in the magnetization. Here we demonstrate that such conditions are realized in simple bilayer metal films where the spin-orbit interaction and spin-dependent scattering couple the current-induced spin accumulation to the electrical conductivity. We show that the longitudinal resistance of Ta|Co and Pt|Co bilayers changes when reversing the polarity of the current or the sign of the magnetization. This unidirectional magnetoresistance scales linearly with current density and has opposite sign in Ta and Pt, which we associate with the modification of the interface scattering potential induced by the spin Hall effect in these materials. Our results suggest a route to control the resistance and detect magnetization switching in spintronic devices using a two-terminal geometry, which applies also to heterostructures including topological insulators.

cond-mat.mes-hall↗

Interplay of spin-orbit torque and thermoelectric effects in ferromagnet/normal metal bilayers

We present harmonic transverse voltage measurements of current-induced thermoelectric and spin-orbit torque (SOT) effects in ferromagnet/normal metal bilayers, in which thermal gradients produced by Joule heating and SOT coexist and give rise to ac transverse signals with comparable symmetry and magnitude. Based on the symmetry and field-dependence of the transverse resistance, we develop a consistent method to separate thermoelectric and SOT measurements. By addressing first ferromagnet/light metal bilayers with negligible spin-orbit coupling, we show that in-plane current injection induces a vertical thermal gradient whose sign and magnitude are determined by the resistivity difference and stacking order of the magnetic and nonmagnetic layers. We then study ferromagnet/heavy metal bilayers with strong spin-orbit coupling, showing that second harmonic thermoelectric contributions to the transverse voltage may lead to a significant overestimation of the antidamping SOT. We find that thermoelectric effects are very strong in Ta(6nm)/Co(2.5nm) and negligible in Pt(6nm)/Co(2.5nm) bilayers. After including these effects in the analysis of the transverse voltage, we find that the antidamping SOTs in these bilayers, after normalization to the magnetization volume, are comparable to those found in thinner Co layers with perpendicular magnetization, whereas the field-like SOTs are about an order of magnitude smaller.

cond-mat.mes-hall↗