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Saranya Das

Publications and source records attributed to Saranya Das.

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Energy-efficient, Reconfigurable Optoelectronic Artificial Synapses Based on MoWS$_2$ Alloy for Pattern Recognition and Color Image Filtering Applications

Two-dimensional transition-metal dichalcogenide alloys are potential candidates for advanced optoelectronic and neuromorphic applications due to their strong light-matter interactions and controllable defect properties. However, large-area growth of such alloys remains challenging, while the correlation between their physical and neuromorphic properties remains largely unclear. In this work, we present an innovative microcavity chemical vapor deposition (CVD) reactor pathway to grow uniform, and large-area MoWS$_2$ mono- and few-layer alloy films for demonstrating optoelectronic synaptic functionalities. Driven by growth-induced intrinsic sulfur vacancies, as confirmed by XPS, KPFM, and STEM measurements, our optoelectronic synaptic device (OSD) successfully emulates essential biological synaptic features, such as excitatory postsynaptic currents (EPSC), paired-pulse facilitation (PPF~170%), and stimulus-dependent short- and long-term plasticities (STP & LTP). With picojoule-order energy consumption per synaptic event and nanoampere-order dark current, the device enables low-power neuromorphic learning, including emulation of Pavlovian associative learning. Furthermore, the experimentally measured conductance weight-update characteristics enabled an artificial neural network (ANN) simulation to achieve 92.43% recognition accuracy on the MNIST handwritten digit dataset. Finally, we demonstrate advanced neuromorphic visual processing by executing color image filtering based on the device's wavelength-selective photoresponse characteristics. This simple, yet multifunctional device architecture provides a promising path toward energy-efficient, spectral-selective neuromorphic vision applications.

cond-mat.mtrl-sci

Probing the Valley-Selective Tunneling Density of States in Monolayer MoS2 based Resonant Tunneling Devices

The present work experimentally demonstrates the fabrication of CVD grown monolayer MoS2 ultra thin quantum well based double barrier resonant tunneling device (RTD) architecture well compatible with conventional CMOS fabrication technology. The strongly quantized electronic states from multiple valleys in the momentum space in such ultra 2D sheet along the c-axis sandwiched in between Al2O3 tunneling barriers exhibit multiple resonant tunneling peaks thereby enhancing the FWHM of the NDR region as derived from experimental I-V characteristics as well as theoretical joint invision through Density Functional Theory (DFT) and Non-Equilibrium Greens function (NEGF) visualized via Tunneling Density of States (TDOS). Understanding extended to S-vacancies not only change the bandgap, as evaluated through nanoscale Cathodoluminescence (CL) spectroscopy, but also alters the effective mass hence the mobility as investigated here within the high symmetry path in the k-space. Electrical performances of fabricated RTD, starting from cryogenic to room temperatures, show a significant milestone via exhibiting huge PVR values of 178 at 4K and 24 at RT with more possible improvement in the field of room temperature quantum technology. Momentum conserved and non conserved tunneling from highly n-doped Si through multiple valleys of 1L-MoS2 provides a tremendous opportunity in gate-induced manipulation in Spin-Valley Qubit technology operational at deep cryogenic temperatures (mK).

cond-mat.mes-hall