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Saroj Kumar Mishra

Publications and source records attributed to Saroj Kumar Mishra.

3 recordsLinked to original sources

Thickness-Driven Control of Room Temperature Ferrimagnetic Skyrmions and their Topological Hall signature in GdFe Single Layers

Magnetic skyrmions are nanoscale, topologically protected spin textures with exceptional potential for high density data storage and energy efficient computing. Among various skyrmion hosting systems, rare earth transition metal ferrimagnets offer a promising platform due to their tunable magnetic properties and intrinsically low net magnetization. Despite this, the fundamental control of ferrimagnetic skyrmions in single layer films remains unexplored. Here, we demonstrate a viable route for engineering room temperature skyrmions in GdFe single layers through precise control of film thickness (60 to 80 nm). Thickness variation enables the systematic tuning of key magnetic parameters, including perpendicular magnetic anisotropy and saturation magnetization, thereby allowing precise control over skyrmion size and density. Magnetic force microscopy (MFM) reveals a clear thickness dependent evolution of isolated skyrmion characteristics, where skyrmion size decreases while skyrmion density increases with increasing GdFe film thickness, in agreement with micromagnetic simulations. At the same time, magnetotransport measurements show a systematic enhancement in the topological Hall resistivity with thickness, further corroborating the increased skyrmion density observed in MFM. Scanning transmission electron microscopy reveals a compositional gradient across the film thickness, indicative of structural asymmetry and potential inversion symmetry breaking, contributing to the emergence of a bulk Dzyaloshinskii Moriya interaction. Notably, sub 60nm skyrmions with high areal density are stabilized at room temperature. This work provides a viable route to tailor the properties of ferrimagnetic skyrmions in single-layer GdFe films, paving the way for the development of high-density ferrimagnetic skyrmionic devices.

cond-mat.mes-hall

Path dependent resistivity study across field induced paramagnetic to ferromagnetic transition in Se doped CoS$_2$

A systematic study of thermomagnetic irreversibility CoS$_{1.76}$Se$_{0.24}$ has been carried out. Our study shows that the resistivity at low temperature can be tuned by cooling in different magnetic fields and the critical field required for paramagnetic (PM) to ferromagnetic (FM) transition varies non-monotonically with temperature. The field induced PM to FM transition results in giant positive magnetoresistance (MR) of about 160\% at 5 K. Measurements under CHUF (cooling and heating in unequal magnetic field) protocol show reentrant transition on warming under higher magnetic field (than that applied during cooling). It indicates that the glass like behaviour in this system can be explained in the framework of the kinetic arrest of first order transition. Among the growing list of diverse system showing glass like arrested magnetic states, the present system is the first example where, kinetic arrest is observed for a disordered (here PM) to ordered (here FM) first order transition.

cond-mat.str-el

The Design and Implementation of an ANN-based Non-linearity Compensator of LVDT Sensor

Linear variable differential transformer (LVDT) sensors are used in engineering applications due to their fine-grained measurements. However, these sensors exhibit non-linear input-output characteristics, which decrease the reliability of the sensing system. The contribution of this article is three-fold. First, it provides an experimental study of the non-linearity problem of the LVDT. Second, it proposes the design of a functional link artificial neural network (FLANN) based non-linearity compensator model for overcoming it. Finally, it validates the feasibility of the solution in simulation, and presents a proof-of-concept hardware implementation on a SPARTAN-II (PQ208)FPGA using VHDL in Xilinx. The model has been mathematically derived, and its simulation study has been presented that achieves nearly 100% linearity range. The result obtained from the FPGA implementation is in good agreement with the simulation result, which establishes its actualization as part of a general manufacturing process for linearity compensated LVDT sensors.

eess.SY