arXiv subjects

Saroj P. Dash

Publications and source records attributed to Saroj P. Dash.

At least 19 recordsLinked to original sources

arXiv2026

Facet-selective ballistic supercurrent in a weak topological insulator

Topological superconductivity is widely pursued by inducing superconducting correlations in topologically protected boundary states. In two dimensions, this strategy has been realized using one-dimensional topological edge modes, but in three-dimensional crystals, spatially separated surface supercurrents confined to selected facets have not yet been achieved. Here we demonstrate facet-selective ballistic supercurrent in Josephson junctions based on the weak topological insulator ZrTe 5 . Superconducting quantum interferometry reveals SQUID-like critical current oscillations with flux-quantum periodicity, establishing that the supercurrent is spatially concentrated on specific crystallographic facets that host gapless topological surface states. Rotating the magnetic field yields markedly distinct interference patterns, linking the supercurrent distribution to the underlying bulk topology. The exponential temperature dependence of the critical current and triangular interference lobes provide signatures of ballistic transport due to high-transmission topological channels. These results establish weak topological insulators as a platform for facet-resolved superconducting devices and higher-order topological superconductivity.

cond-mat.mes-hall↗

arXiv2026

Breaking the width-scaling limit in high-performance atomically thin 2D nanoribbon transistors

State-of-the-art transistors have been successfully scaled the gate lengths and channel thicknesses down to 5 nm for high-performance and energy-efficient information processing. However, reducing channel width below 40-50 nm remains a bottleneck, as dangling bonds, edge disorder, and lateral depletion suppress drive current and degrade device performance. Here, we break this width-scaling wall using ultra-scaled two-dimensional semiconductor (2DSC) nanoribbon transistors down to 15 nm. In contrast to the conventional scaling rule of degradation of current density upon width scaling, our atomically-thin monolayer and bilayer molybdenum disulfide nanoribbon transistors exhibit enhancement of on-current density of up to 230% and 170%,respectively, followed by a saturation for the narrowest channels down to 15 nm. The ultra-narrow nanoribbon transistors maintain the highest on/off ratios reported so far for similar device dimensions, with improved mobility and threshold-voltage stability, indicating reduced edge scattering and depletion with a stronger electrostatic control. These findings lead to a breakthrough in width scaling rules using 2DSC nanoribbons with enhanced performance at narrower channel widths, which is promising for the ultimate scaling of transistors.

cond-mat.mes-hall↗

arXiv2026

Revealing quantum metric multipoles in magnetic topological insulator MnBi2Te4

Nonlinear electronic transport has emerged as a powerful probe of the quantum geometry in topological quantum materials, where the band topology and broken symmetries facilitate power law current voltage responses beyond Ohms law. While nonlinear transport of the second and third orders has been studied in several quantum materials, higher-order transport has so far mainly remained experimentally inaccessible, leaving more detailed features of the quantum geometry unexplored. Here, we observe higher order nonlinear electronic transport up to the seventh harmonic order in multilayer magnetic topological insulator MnBi2Te4. We find an even-odd behavior where the odd order nonlinear transport components dominate while the even-order ones are suppressed. Temperature and magnetic field dependent measurements show a strong correlation between the nonlinear transport and the magnetic phases of MnBi2Te4. Through scaling analysis and theoretical calculations, quantum metric multipoles and nonlinear Drude conductivities are identified as the microscopic origins of the nonlinear transport.

cond-mat.mes-hall↗

arXiv2026

Nanoelectronics with Two Dimensional Magnets

Two dimensional (2D) magnets have emerged as a compelling platform for spin based nanoelectronics, enabling atomic scale control of magnetic order, interfaces, quantum geometry, and symmetry. Here, we highlight recent advances in 2D ferromagnets, antiferromagnets, altermagnets, and related magnetic phases, emphasizing how enhanced Curie temperatures, perpendicular magnetic anisotropy, and unconventional magnetic orders translate into device relevant functionality. Spin dependent transport in vertical magnetic tunnel junctions and lateral spin valves based on 2D heterostructures are discussed, where atomically sharp interfaces enable highly tunable spin injection, propagation, and detection. We further focused on field free energy efficient spin orbit torque magnetization switching in 2D magnetic heterostructures, in which unconventional spin currents originate from an adjacent low symmetry spin orbit layer. Microscopic mechanisms involving symmetry breaking, Berry curvature, and orbital angular momentum transport are discussed, along with key challenges, including switching determinism and torque efficiency. Materials and device design strategies targeting neuromorphic, hybrid quantum spintronic, and multifunctional architectures are outlined. Collectively, these developments position 2D magnets as a promising candidate for tunable, energy efficient integrated spintronic technologies that can harness intertwined spin, charge, orbital, and topological degrees of freedom at the nanoscale.

cond-mat.mes-hall↗

arXiv2026

Large spin signal and spin rectification in folded-bilayer graphene

Graphene is a promising platform for spin-based non-volatile memory, logic, and neuromorphic computing by combining long-distance spin transport with electrical tunability at room temperature. However, advancing beyond passive spin channels requires devices capable of generating large spin signals with efficient rectification capabilities, which are essential for active spintronic components. Here, we demonstrate a folded-bilayer graphene spin-valve device with giant non-local spin signals in the several mV range with pronounced spin-rectification effects. Efficient spin injection creates a significant spin accumulation of 20 meV and generates a spin diode effect with an asymmetry of over an order of magnitude between forward and reverse bias conditions. This spin-diode effect is expected to arise from nonlinear spin-charge interactions in the folded-bilayer graphene channel. These observed large spin signals and spin-diode effects in graphene systems offer a promising platform for developing active two-dimensional spintronic devices.

physics.app-ph↗

arXiv2025

Spin-Texture Spin-valve with a van der Waals Magnet

All-electrical methods for nucleating, detecting, and manipulating spin textures in two-dimensional (2D) van der Waals (vdW) magnets can serve as fundamental building blocks for multi-state spintronic memory, logic, and neuromorphic computing applications. Unlike conventional ferromagnets, vdW ferromagnets such as Fe5GeTe2 with strong Dzyaloshinskii-Moriya interactions stabilize nanoscale chiral spin textures, including skyrmions and stripe domains. However, the sub-100 nm size of these spin textures has limited their study to sophisticated microscopy techniques. Here, we demonstrate all-electrical detection of spin textures in vdW itinerant ferromagnet Fe5GeTe2 using pure spin transport in a lateral graphene spin-valve device at room temperature. By engineering nanoscale constrictions or notches in Fe5GeTe2, we create spin textures that inject distinct spin polarizations into the graphene channel, where they are nonlocally sensed by a reference conventional ferromagnetic detector at room temperature. This enables the observation of anomalous multi-level spin-valve switching and Hanle spin precession signals, which are due to unique spin textures in Fe5GeTe2 and in sharp contrast to single-domains and conventional magnet-based devices. This all-electrical approach can provide direct access to the spin textures on an integrated 2D spintronic circuit without the need for ex-situ microscopic characterizations.

cond-mat.mes-hall↗

arXiv2025

Interplay between altermagnetic order and crystal symmetry probed using magnetotransport in epitaxial altermagnet MnTe

Altermagnets are a new class of magnetic materials characterized by fully compensated spins arranged in alternating local structures, allowing for spin-split bands similar to those found in ferromagnets without net magnetism. Recently, MnTe has emerged as a prototypical altermagnetic material exhibiting spin-polarized electronic bands and anomalous transport phenomena. Although recent work has explored the magnetic and structural properties of MnTe, detailed experimental investigations into the relationship between altermagnetic order and crystal symmetry are lacking. Here, we report the relationship between altermagnetic order and crystal symmetry by investigating magnetotransport properties of MnTe epitaxial altermagnetic thin films grown by molecular beam epitaxy. We observe a spontaneous anomalous Hall effect and show the control of Hall response with the altermagnetic order using the magnetic field and the crystallographic angle dependence. Detailed measurements establish that both the longitudinal and transverse electronic responses depend on the relative orientation of the applied current and Néel vector as well as on the crystal orientation and altermagnetic order. These results provide new insights into the interplay between crystal symmetry and altermagnetism for future device applications.

cond-mat.mtrl-sci↗

arXiv2025

Giant Spin Pumping at Polymer/Ferromagnet Interfaces for Hybrid Spintronic Devices

While the growing utilization of polymers in flexible electronic devices has sparked significant interest in polymer/metal interfaces, spintronic studies of such interfaces remain limited. Here, we systematically study spin pumping across a polymer/ferromagnet metal interface between hydrogen silsesquioxane (HSQ) oligomer layers ($t_\mathit{HSQ} = 30, 36, 48$ nm) and NiFe ($t_\mathit{NiFe} = 4, 5, 7, 10$ nm) thin films. Using ferromagnetic resonance measurements, we observe strong spin pumping (large linewidth broadening) and a giant spin mixing conductance, reaching 19.8~${\rm nm^{-2}}$ for HSQ = 48 nm, \emph{i.e.}~comparable to that of heavy metals. Our results suggest efficient spin transfer across the HSQ/NiFe interface, possibly originating from a combination of spin and orbital pumping, and provide valuable insights for designing self-powered and flexible spintronic devices utilizing polymers in combination with ferromagnetic materials.

cond-mat.mes-hall↗

arXiv2025

Energy-efficient field-free unconventional spin-orbit torque magnetization switching dynamics in van der Waals heterostructures

Van der Waals (vdW) heterostructure of two-dimensional (2D) quantum materials offers a promising platform for efficient control of magnetization dynamics for non-volatile spin-based devices. However, energy-efficient field-free spin-orbit torque (SOT) switching and spin dynamics experiments to understand the basic SOT phenomena in all-2D vdW heterostructures are so far lacking. Here, we demonstrate energy-efficient field-free spin-orbit torque (SOT) switching and tunable magnetization dynamics in a vdW heterostructure comprising out-of-plane magnet Fe3GaTe2 and topological Weyl semimetal TaIrTe4. We measured the non-linear second harmonic Hall signal in TaIrTe4 /Fe3GaTe2 devices to evaluate the SOT-induced magnetization dynamics, which is characterized by a large and tunable out-of-plane damping-like torque. Energy-efficient and deterministic field-free SOT magnetization switching is achieved at room temperature with a very low current density. First-principles calculations unveil the origin of the unconventional charge-spin conversion phenomena, considering the crystal symmetry and electronic structure of TaIrTe4. These results establish that all-vdW heterostructures provide a promising route to energy-efficient, field-free, and tunable SOT-based spintronic devices.

cond-mat.mes-hall↗

arXiv2024

Roadmap on Quantum Magnetic Materials

Fundamental research on two-dimensional (2D) magnetic systems based on van der Waals materials has been gaining traction rapidly since their recent discovery. With the increase of recent knowledge, it has become clear that such materials have also a strong potential for applications in devices that combine magnetism with electronics, optics, and nanomechanics. Nonetheless, many challenges still lay ahead. Several fundamental aspects of 2D magnetic materials are still unknown or poorly understood, such as their often-complicated electronic structure, optical properties, and magnetization dynamics, and their magnon spectrum. To elucidate their properties and facilitate integration in devices, advanced characterization techniques and theoretical frameworks need to be developed or adapted. Moreover, developing synthesis methods which increase critical temperatures and achieve large-scale, high-quality homogeneous thin films is crucial before these materials can be used for real-world applications. Therefore, the field of 2D magnetic materials provides many challenges and opportunities for the discovery and exploration of new phenomena, as well as the development of new applications. This Roadmap presents the background, challenges, and potential research directions for various relevant topics in the field on the fundamentals, synthesis, characterization, and applications. We hope that this work can provide a strong starting point for young researchers in the field and provide a general overview of the key challenges for more experienced researchers.

cond-mat.mtrl-sci↗

arXiv2024

Trion Engineered Multimodal Transistors in Two dimensional Bilayer Semiconductor Lateral Heterostructures

Multimodal device operations are essential to advancing the integration of 2D semiconductors in electronics, photonics, information and quantum technology. Precise control over carrier dynamics, particularly exciton generation and transport, is crucial for finetuning the functionality of optoelectronic devices based on 2D semiconductor heterostructure. However, the traditional exciton engineering methods in 2D semiconductors are mainly restricted to the artificially assembled vertical pn heterostructures with electrical or strain induced confinements. In this study, we utilized bilayer 2D lateral npn multijunction heterostructures with intrinsically spatially separated energy landscapes to achieve preferential exciton generation and manipulation without external confinement. In lateral npn FET geometry, we uncover unique and nontrivial properties, including dynamic tuning of channel photoresponsivity from positive to negative. The multimodal operation of these 2D FETs is achieved by carefully adjusting electrical bias and the impinging photon energy, enabling precise control over the trions generation and transport. Cryogenic photoluminescence measurement revealed the presence of trions in bilayer MoSe2 and intrinsic trap states in WSe2. Measurements in different FET device geometries show the multifunctionality of 2D lateral heterostructure phototransistors for efficient tuning and electrical manipulation of excitonic characteristics. Our findings pave the way for developing practical exciton-based transistors, sensors, multimodal optoelectronic and quantum technologies

physics.app-ph↗

arXiv2024

Signature of pressure-induced topological phase transition in ZrTe$_5$

The layered van der Waals material ZrTe$_5$ is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe$_5$ nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe$_5$ is a weak TI in ambient conditions.

cond-mat.mes-hall↗

arXiv2024

Coexistence of non-trivial van der Waals magnetic orders enable field-free spin-orbit torque switching at room temperature

The discovery of van der Waals (vdW) magnetic materials exhibiting non-trivial and tunable magnetic interactions can give rise to exotic magnetic states, which are not readily attainable with conventional materials. Such vdW magnets can provide a unique platform for studying new magnetic phenomena and realizing magnetization dynamics for energy-efficient and non-volatile spintronic memory and computing technologies. Here, we discover the coexistence of ferromagnetic and antiferromagnetic orders in vdW magnet (Co0.5Fe0.5)5-xGeTe2 (CFGT) CFGT above room temperature, inducing an intrinsic exchange bias and canted perpendicular magnetism. Such non-trivial intrinsic magnetic order enables us to realize energy-efficient, magnetic field-free, and deterministic spin-orbit torque (SOT) switching of CFGT in heterostructure with Pt. The devices show a very large spin Hall conductivity, a low critical current density, and yield a large SOT effective field. These experiments, together with density functional theory and Monte Carlo simulations establish coexisting non-trivial magnetic orders in CFGT that enable field-free SOT magnetization dynamics in spintronic devices.

cond-mat.mes-hall↗

arXiv2024

Room temperature nonlocal detection of charge-spin interconversion in a topological insulator

Topological insulators (TIs) are emerging materials for next-generation low-power nanoelectronic and spintronic device applications. TIs possess non-trivial spin-momentum locking features in the topological surface states in addition to the spin-Hall effect (SHE), and Rashba states due to high spin-orbit coupling (SOC) properties. These phenomena are vital for observing the charge-spin conversion (CSC) processes for spin-based memory, logic and quantum technologies. Although CSC has been observed in TIs by potentiometric measurements, reliable nonlocal detection has so far been limited to cryogenic temperatures up to T = 15 K. Here, we report nonlocal detection of CSC and its inverse effect in the TI compound Bi1.5Sb0.5Te1.7Se1.3 at room temperature using a van der Waals heterostructure with a graphene spin-valve device. The lateral nonlocal device design with graphene allows observation of both spin-switch and Hanle spin precession signals for generation, injection and detection of spin currents by the TI. Detailed bias- and gate-dependent measurements in different geometries prove the robustness of the CSC effects in the TI. These findings demonstrate the possibility of using topological materials to make all-electrical room-temperature spintronic devices.

cond-mat.mes-hall↗

arXiv2024

Large Non-Volatile Frequency Tuning of Spin Hall Nano-Oscillators using Circular Memristive Nano-Gates

Spin Hall nano oscillators (SHNOs) are promising candidates for neuromorphic computing due to their miniaturized dimensions, non-linearity, fast dynamics, and ability to synchronize in long chains and arrays. However, tuning the individual SHNOs in large chains/arrays, which is key to implementing synaptic control, has remained a challenge. Here, we demonstrate circular memristive nano-gates, both precisely aligned and shifted with respect to nano-constriction SHNOs of W/CoFeB/HfOx, with increased quality of the device tunability. Gating at the exact center of the nano-constriction region is found to cause irreversible degradation to the oxide layer, resulting in a permanent frequency shift of the auto-oscillating modes. As a remedy, gates shifted outside of the immediate nano-constriction region can tune the frequency dramatically (>200 MHz) without causing any permanent change to the constriction region. Circular memristive nano-gates can, therefore, be used in SHNO chains/arrays to manipulate the synchronization states precisely over large networks of oscillators.

physics.app-ph↗

arXiv2023

Evidence of electron correlation induced kink in Dirac bands in a non-symmorphic Kondo lattice system, CeAgSb2

We study the behavior of Dirac fermions in the presence of electron correlation in a nonsymmorphic Kondo lattice system, CeAgSb2 employing high-resolution angle-resolved photoemission spectroscopy and first-principles calculations. Experiments reveal crossings of highly dispersive linear bands at the Brillouin zone boundary due to non-symmorphic symmetry. In addition, anisotropic Dirac cones are observed constituted by the squarenet Sb 5p states forming a diamond-shaped nodal line. The Dirac bands are linear in a wide energy range with a unusually high slope and exhibit distinct Dirac point in this highly spin-orbit coupled system. Interestingly, the linearity of the bands are preserved even after the hybridization of these states with the local Ce 4f states, which leads to a small reduction of slope via formation of a 'kink'. These results seed the emergence of an area of robust topological fermions even in presence of strong correlation.

cond-mat.str-el↗

arXiv2023

Strong in-plane magnetic anisotropy (Co0.15Fe0.85)5GeTe2/graphene van der Waals heterostructure spin-valve at room temperature

Van der Waals (vdW) magnets are promising owing to their tunable magnetic properties with doping or alloy composition, where the strength of magnetic interactions, their symmetry, and magnetic anisotropy can be tuned according to the desired application. However, most of the vdW magnet based spintronic devices are so far limited to cryogenic temperatures with magnetic anisotropies favouring out-of-plane or canted orientation of the magnetization. Here, we report room-temperature lateral spin-valve devices with strong in-plane magnetic anisotropy of the vdW ferromagnet (Co0.15Fe0.85)5GeTe2 (CFGT) in heterostructures with graphene. Magnetization measurements reveal above room-temperature ferromagnetism in CFGT with a strong in-plane magnetic anisotropy. Density functional theory calculations show that the magnitude of the anisotropy depends on the Co concentration and is caused by the substitution of Co in the outermost Fe layer. Heterostructures consisting of CFGT nanolayers and graphene were used to experimentally realize basic building blocks for spin valve devices such as efficient spin injection and detection. The spin transport and Hanle spin precession measurements prove a strong in-plane and negative spin polarization at the interface with graphene, which is supported by the calculated spin-polarized density of states of CFGT. The in-plane magnetization of CFGT at room temperature proves its usefulness in graphene lateral spin-valve devices, thus opening further opportunities for spintronic technologies.

cond-mat.mes-hall↗

arXiv2023

Large out-of-plane spin-orbit torque in topological Weyl semimetal candidate TaIrTe4

Topological quantum materials, with novel spin textures and broken crystal symmetries are suitable candidates for spintronic memory technologies. Their unique electronic properties, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin polarized current needed for external field free magnetization switching of magnets with perpendicular magnetic anisotropy. Conventional spin-orbit torque materials, such as heavy metals and topological insulators, provide only an in-plane spin polarized current, and recently explored materials with lower crystal symmetries provide very low out-of-plane spin polarized current components, which is not suitable for energy-efficient spin-orbit torque (SOT) applications. Here, we demonstrate a large out-of-plane damping-like SOT at room temperature using a topological Weyl semimetal candidate TaIrTe4 with a lower crystal symmetry. We performed spin-orbit torque ferromagnetic resonance (STFMR) experiments in a TaIrTe4/Ni80Fe20 heterostructure and observed a large out-of-plane damping-like SOT efficiency. The out-of-plane spin Hall conductivity is estimated to be an order of magnitude higher than the reported values in other materials. These findings of high spin Hall conductivity and large out-of-plane SOT efficiency are suitable for the development of energy efficient and external field-free spintronic devices.

cond-mat.mes-hall↗