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Sasan Fathpour

Publications and source records attributed to Sasan Fathpour.

9 recordsLinked to original sources

Sidewall-Poled Nanophotonic Lithium Niobate with Bidirectional Characterization

Accurate characterization of integrated nonlinear photonic devices is often limited by unknown facet-coupling losses and fabrication-induced non-uniformities, leading to systematic over- or underestimation of the intrinsic on-chip performance. Here, we present and demonstrate a unified bidirectional characterization framework that exploits nonlinear interactions under forward and backward propagation to independently extract facet-specific coupling efficiencies, intrinsic nonlinear conversion efficiency, and the longitudinal quasi-phase-matching profile using only classical power measurements. We experimentally validate the method using sidewall-poled thin-film lithium niobate waveguides, obtaining a normalized second-harmonic generation efficiency of $(1850 \pm 20)~\%\mathrm{W}^{-1}$ while simultaneously demonstrating broadband non-degenerate optical parametric amplification and parametric generation spanning more than $10~\mathrm{THz}$. Our framework is non-destructive, relies solely on classical power measurements, requires neither time-intensive microscopy nor calibrated internal references, and is compatible with wafer-scale testing, providing a general route to rigorous benchmarking and high-throughput characterization of photonic devices across material platforms.

physics.optics

Ultra-broadband, Low-loss Wavelength Combiners and Filters: Novel Designs and Experiments in Thin-film Lithium Niobate

Thin-film lithium niobate (TFLN) has emerged as a leading platform for large-scale programmable photonic circuits for quantum and classical applications. As circuits scale in complexity, low-loss routing of broadband pump and signal fields becomes essential. Here, we present closed-form analytical models and experimentally demonstrate compact, fast-quasi-adiabatic driving-optimized wavelength combiners and filters operating at the fundamental harmonic (FH, 1550 nm) and second-harmonic (SH, 775 nm) wavelengths. Our designs achieve ultra-low loss below 0.06 dB across a 90 nm bandwidth at FH, while maintaining extinction ratios exceeding 25 dB. At SH, the loss remains below 0.12 dB over a 45 nm bandwidth with extinction ratios greater than 19 dB. Devices fabricated on a 300-nm TFLN platform exhibit added loss below 0.1 dB across 1550 - 1600 nm, with minimum values of 0.04 dB around 1580 nm and 0.021 dB at 775 nm. Combined with recent advances in on-chip quantum state generation, low-loss interferometers, and detection, these results enable high-fidelity quantum photonic circuits on the TFLN platform.

physics.optics

Fully-Tensorial Elastic-Wave Mode-Solver in FEniCS for Stimulated Brillouin Scattering Modeling

A framework for simulating the elastic-wave modes in waveguides, taking into account the full tensorial nature of the stiffness tensor, is presented and implemented in the open-source finite element solver, FEniCS. Various approximations of the elastic wave equation used in the stimulated Brillouin scattering literature are implemented and their validity and applicability are discussed. The elastic mode-solver is also coupled with an electromagnetic counterpart to study the influence of elastic anisotropies on Brillouin gain.

physics.comp-ph

Topographically anisotropic photonics for broadband integrated polarization diversity

Integrated polarimetric receivers have the potential to define a new generation of lightweight, high-performance instrumentation for remote sensing. To date, on-chip polarization-selective devices such as polarizing beam-splitters have yet to even approach the necessary performance, due to fundamental design limitations. Here, we propose, simulate and experimentally demonstrate a method for realizing spatially-mapped birefringence onto integrated photonic circuits, deemed topographically anisotropic photonics. With this robust and widely tolerant approach, devices can be constructed with strongly polarization-dependent modal properties and minimal wavelength dependence. An integrated polarizing beam-splitter (PBS) is realized with unprecedented performance: a record 0.52 octaves of fractional bandwidth (116 THz), maximum insertion loss of 1.4 +/- 0.8 dB, and a minimum extinction ratio of 16 +/- 3 dB, pushing it into the realm of wideband spectroscopy and imaging applications. Additionally, novel photonic structures such as polarization-selective beam-taps and polarization-selective microring resonators are demonstrated, enabling new on-chip polarimetric receiver architectures.

physics.optics

Second-harmonic generation in single-mode integrated waveguides through mode-shape modulation

A simple and flexible technique for achieving quasi-phase-matching in integrated photonic waveguides without periodic poling is proposed and experimentally demonstrated, referred to as mode-shape-modulation (MSM). It employs a periodic variation of waveguide width to modulate the intensity of the pump wave, effectively suppressing out-of-phase light generation. This technique is applied to the case of second-harmonic generation in thin-film lithium niobate ridge waveguides. MSM waveguides are fabricated and characterized with pulsed-pumping in the near-infrared, showing harmonic generation at a signal wavelength of 784 nm.

physics.optics

Second-harmonic generation in periodically-poled thin film lithium niobate wafer-bonded on silicon

Second-order optical nonlinear effects (second-harmonic and sum-frequency generation) are demonstrated in the telecommunication band by periodic poling of thin films of lithium niobate wafer-bonded on silicon substrates and rib-loaded with silicon nitride channels to attain ridge waveguide with cross-sections of ~ 2 μm2. The compactness of the waveguides results in efficient second-order nonlinear devices. A nonlinear conversion of 8% is obtained with a pulsed input in 4 mm long waveguides. The choice of silicon substrate makes the platform potentially compatible with silicon photonics, and therefore may pave the path towards on-chip nonlinear and quantum-optic applications.

physics.optics

Demonstration of ultra-broadband single-mode and single-polarization operation in T-Guides

Silica-based anchored-membrane waveguides (T-Guides) are fabricated and characterized from the visible to infrared with streak imaging. It is numerically shown that the T-Guides can have wideband single-mode and single-polarization (SMSP) properties over a span of 2.6 octaves. Experimentally, a polarization-dependent loss difference of up to 90 dB/cm is measured between orthogonal polarizations, and a record SMSP window of >1.27 octaves is observed, limited only by the available measurement equipment. These measurements make a strong case for T-Guides for SMSP photonics, particularly on high-index materials such as our previous demonstration on silicon.

physics.optics

Single-mode and single-polarization photonics with anchored-membrane waveguides

An integrated photonic platform with anchored-membrane structures, the T-Guide, is proposed and numerically investigated. These compact air-clad structures have high index contrast and are much more stable than prior membrane-type structures. Their semi-infinite geometry enables single-mode and single-polarization (SMSP) operation over unprecedented bandwidths. Modal simulations quantify this behavior, showing that an SMSP window of 2.75 octaves (1.2 - 8.1 μm) is feasible for silicon T-Guides, spanning almost the entire transparency range of silicon. Dispersion engineering for T-Guides yields broad regions of anomalous group velocity dispersion, rendering them a promising platform for nonlinear applications, such as wideband frequency conversion.

physics.optics

Extreme value statistics and the Pareto distribution in silicon photonics

L-shape probability distributions are extremely non-Gaussian distributions that have been surprisingly successful in describing the frequency of occurrence of extreme events, ranging from stock market crashes and natural disasters, the structure of biological systems, fractals, and optical rogue waves. In this paper, we show that fluctuations in stimulated Raman scattering in silicon, as well as in coherent anti-Stokes Raman scattering, can follow extreme value statistics and provide mathematical insight into the origin of this behavior. As an example of the experimental observations, we find that 16% of the Stokes pulses account for 84% of the pump energy transfer, an uncanny resemblance to the empirical Pareto principle or the 80/20 rule that describes important observation in socioeconomics.

physics.optics