Interface-engineered oxidation-resistant wafer-level Tantalum-Tantalum thermocompression bonding for 3D integration of superconducting interconnects
Wafer-level 3D integration of superconducting interconnects requires low-thermal budget bonding processes compatible with superconducting materials. Rapid native oxide formation on tantalum (Ta) surfaces limits low-temperature, low-pressure direct Ta-Ta thermocompression bonding. In this study, we develop an oxidation-resistant bonding process using an ultrathin Au passivation layer to suppress oxide formation during bonding. The engineered interface enables blanket Ta-Ta wafer bonding at 300 $^\circ$C under 4.93 bar, significantly reducing the bonding thermal budget and generation of $\alpha$-Ta across the interface, which potentially improves coherence time as reported in literature. Structural and interfacial analyses confirm oxide suppression and continuous metallic bonding, having a bond strength of 169 MPa. This work demonstrates a low-temperature, low-pressure Ta-Ta thermocompression bonding strategy for scalable 3D superconducting interconnect integration.