arXiv subjects

Satoshi Izumi

Publications and source records attributed to Satoshi Izumi.

3 recordsLinked to original sources

arXiv2021

TeaNet: universal neural network interatomic potential inspired by iterative electronic relaxations

A universal interatomic potential for an arbitrary set of chemical elements is urgently needed in computational materials science. Graph convolution neural network (GCN) has rich expressive power, but previously was mainly employed to transport scalars and vectors, not rank $\ge 2$ tensors. As classic interatomic potentials were inspired by tight-binding electronic relaxation framework, we want to represent this iterative propagation of rank $\ge 2$ tensor information by GCN. Here we propose an architecture called the tensor embedded atom network (TeaNet) where angular interaction is translated into graph convolution through the incorporation of Euclidean tensors, vectors and scalars. By applying the residual network (ResNet) architecture and training with recurrent GCN weights initialization, a much deeper (16 layers) GCN was constructed, whose flow is similar to an iterative electronic relaxation. Our traning dataset is generated by density functional theory calculation of mostly chemically and structurally randomized configurations. We demonstrate that arbitrary structures and reactions involving the first 18 elements on the periodic table (H to Ar) can be realized satisfactorily by TeaNet, including C-H molecular structures, metals, amorphous SiO${}_2$, and water, showing surprisingly good performance (energy mean absolute error 19 meV/atom) and robustness for arbitrary chemistries involving elements from H to Ar.

physics.comp-ph↗

arXiv2018

Elucidation of the atomic-scale mechanism of the anisotropic oxidation rate of 4H-SiC between the ($0001$) Si-face and ($000\overline{1}$) C-face by using a new Si-O-C interatomic potential

Silicon carbide (SiC) is an attractive semiconductor material for applications in power electronic devices. However, fabrication of a high-quality SiC/SiO${}_2$ interface has been a challenge. It is well-known that there is a great difference in oxidation rate between the Si-face and C-face, and that the quality of oxide on the Si-face is greater than that on the C-face. However, the atomistic mechanism of the thermal oxidation of SiC remains to be solved. In this paper, a new Si-C-O interatomic potential was developed to reproduce the kinetics of the thermal oxidation of SiC. Using this newly developed potential, large-scale SiC oxidation simulations at various temperature were performed. The results showed that the activation energy of the Si-face is much larger than that of the C-face. In the case of the Si-face, a flat and aligned interface structure including Si${}^{1+}$ was created. Based on the estimated activation energies of the intermediate oxide states, it is proposed that the stability of the flat interface structure is the origin of the high activation energy of the oxidation of the Si-face. In contrast, in the case of the C-face, it is found that the Si atom at the interface are easily pulled up by the O atoms. This process generates the disordered interface and decreases the activation energy of the oxidation. It is also proposed that many excess C atoms are created in the case of the C-face.

cond-mat.mtrl-sci↗

arXiv2018

Atomistic mechanism of graphene growth on SiC substrate: Large-scale molecular dynamics simulation based on a new charge-transfer bond-order type potential

Thermal decomposition of silicon carbide is a promising approach for the fabrication of graphene. However, the atomistic growth mechanism of graphene remains unclear. This paper describes the development of a new charge-transfer interatomic potential. Carbon bonds with a wide variety of characteristics can be reproduced by the proposed vectorized bond-order term. Large-scale thermal decomposition simulation enables us to observe the continuous growth process of the multi-ring carbon structure. The annealing simulation reveals the atomistic process by which the multi-ring carbon structure is transformed to flat graphene involving only 6-membered rings. Also, it is found that the surface atoms of the silicon carbide substrate enhance the homogeneous graphene formation.

cond-mat.mtrl-sci↗