arXiv subjects

Satoshi Sasaki

Publications and source records attributed to Satoshi Sasaki.

At least 19 recordsLinked to original sources

arXiv2026

Temperature-Dependent Spin-Orbit Torque Generation in Perpendicularly Magnetized Topological Insulator-Magnetic Multilayer Heterostructures

We report a comprehensive temperature-dependent investigation of spin-orbit torque (SOT) generation in heterostructures comprising a perpendicularly magnetized metallic multilayer grown on top of a topological insulator (TI) epilayer. Temperature-dependent second-harmonic Hall measurements reveal distinct trends in the magnitude of the spin-orbit torque across the studied heterostructures. Samples incorporating Bi2Se3 exhibit torques reaching approximately 12 mT/(10^12 A m^-2) at 15 K, around 5 times larger than those in a multilayer without the topological layer. The structure with a thin 2-nm Ta buffer for the multilayer shows the strongest enhancement and a pronounced increase at low temperatures, highlighting efficient spin-current generation from the topological surface states. In contrast, the sample with a 10 nm-thick Ta spacer exhibits reduced torque efficiency, consistent with partial attenuation of spin transmission through the buffer. Systems lacking Bi2Se3 but containing two heavy metals (Ta and Pt) yield significantly smaller torques, around 2.5 mT/(10^12 A m^-2), despite the presence of conventional spin Hall sources. These observations underscore the dominant role of TI-derived spin-momentum-locked currents in driving large damping-like torques and their sensitivity to interfacial structure and buffer-layer thickness.

cond-mat.mes-hall↗

arXiv2026

A simple method to fabricate Josephson junctions

A minimal method to fabricate Al/AlO$_x$/Al Josephson junctions (JJs) using photolithography and argon etching, before metallization and oxidation, is demonstrated. JJs with areas ranging from 1 to 6 $μ$m$^2$ can be fabricated and, with the appropriate oxidation conditions, the junction resistance can be varied by $\sim$2 orders of magnitude. Transmission electron microscopy reveals the successful fabrication of JJs with few grain boundaries suggesting reduced energy loss from two-level-systems. Superconducting QUantum Interference Devices (SQUIDs) fabricated from this methodology exhibit reduced resistance variation over multiple chips, compared with electron beam lithography, and the devices can sustain repeated thermal cycles to 10 mK with the excellent flux response remaining unchanged. The quantum applications of this technology are demonstrated by embedding a SQUID resonator into a 3D cavity and parametrically amplifying low photon numbers with gains of $\sim$40 dB. This work establishes the simplest approach to fabricating JJs to date, and it could prove pivotal to the widespread utilization of superconducting circuit-based quantum technologies.

quant-ph↗

arXiv2026

Uniform Narrow Excitonic Spectrum in Large-Area Suspended WSe2 Monolayers

Uniformity in the excitonic spectrum is a key requirement for accessing intrinsic excitonic physics in two-dimensional semiconductors; however, in transition-metal dichalcogenide (TMD) monolayers supported on substrates, exciton energies and linewidths can vary spatially due to inhomogeneities from contact with other materials or fabrication residues. Suspended TMD monolayers provide a route to minimizing substrate-induced disorder, although conventional transfer processes can introduce contamination. Here we demonstrate the spatially uniform excitonic spectrum from optically high-quality WSe2 suspended monolayers fabricated by gold-assisted exfoliation directly onto an Au contact electrode of a gate-tunable device. The resulting membranes span narrow suspended regions up to ~80 um and show spatially uniform photoluminescence at cryogenic temperatures with neutral-exciton linewidths as low as ~4.5 meV. Spectral reproducibility supports an intrinsic optical response, while gate-dependent measurements resolve multiple excitonic species. This approach provides a route to electrically tunable potential landscapes in suspended TMD monolayers with a highly uniform excitonic response.

cond-mat.mes-hall↗

arXiv2026

Tailoring Ultrathin Magnetic Multilayers at Terraced Topologically Insulating Interfaces for Perpendicularly Magnetized Domains

Topological insulators and skyrmion-hosting, chiral magnetic multilayers are two well-explored areas of modern condensed matter physics, each offering unique advantages for spintronics applications. In this paper, we demonstrate the optimization process for the growth of a Bi$_2$Se$_3$/buffer/[Pt/CoB/Ru]$_{\times N}$ heterostructure that combines these two material classes: the Bi$_2$Se$_3$ epilayer was grown by molecular beam epitaxy before transfer under ultrahigh vacuum to a separate growth chamber where the polycrystalline metallic multilayer was sputter deposited. The structure of the samples was characterized by co-fitted X-ray and polarized neutron reflectometry measurements and scanning transmission electron microscopy. Polarized neutron models and standard magnetometry show that a buffer layer exceeding a critical thickness is required to obtain the desired uniform, perpendicular magnetic anisotropy in every magnetic layer in the multilayer. Samples with both Ta and Mo buffers were used requiring thicknesses of 1.5 and 0.9 nm respectively. In minimizing the Bi$_2$Se$_3$ terracing, buffered samples yield well-defined, out-of-plane, magnetic domains suitable for spin-orbit torque induced manipulation as determined by X-ray photoemission electron microscopy.

cond-mat.mtrl-sci↗

arXiv2025

Tuning the Electronic States of Bi2Se3 Films with Large Spin-Orbit Interaction Using Molecular Heterojunctions

An electric bias can shift the Fermi level along the Dirac cone of a topological insulator and modify its charge transport, but tuning the electronic states and spin-orbit interaction (SOI) without destroying the surface topology is challenging. Here, we show that thin film Bi2Se3/n-p (p-n) molecular diodes form ordered interfaces where charge transfer and orbital re-hybridisation result in a decrease (increase) of the carrier density and improved mobility. In Bi2Se3 the spin-orbit lifetime, t_so, is 0.13 ps, which is comparable to the strongest spin-orbit materials. This lifetime drops further to 0.06 ps (0.09 ps) with the addition of p-n (n-p) molecular diodes, at the limit of measurable values. This strengthened spin-orbit interaction occurs even though molecules are made of light elements and increase the mean free path of the charge carriers by almost 50%, indicating changes to the Berry curvature and/or Rashba splitting around the hybridisation points. Raman spectroscopy gives evidence that the coupling effect may be controlled by optical irradiation, opening a pathway towards the design of heavy-light element hybrids with optically tunable quantum transport.

cond-mat.mtrl-sci↗

arXiv2025

Rocksalt rare-earth monoxides as electronic and magnetic materials

Stable binary rare earth (RE) oxides are usually trivalent RE ion sesquioxides (RE2O3), that are highly insulating and either nonmagnetic or antiferromagnetic. On the other hand, rocksalt-type divalent RE ion monoxides (REOs) have been scarcely synthesized owing to their metastable nature. Accordingly, their fundamental properties have not been unveiled. Recently, thin film epitaxy was successfully applied to synthesize various REOs. In stark contrast with RE2O3, REOs are highly electrically conducting, and exhibit superconductivity, room temperature ferromagnetism, and so on. Therefore, REOs are new and simple f-electron system, promising as electronic, magnetic, and spintronic materials. In this review, their fundamental properties are introduced, and their significance and future prospects are discussed toward a new paradigm in f-electron systems.

cond-mat.mtrl-sci↗

arXiv2025

On-chip transfer of ultrashort graphene plasmon wavepackets using terahertz electronics

Steering transport of ultrashort polariton wavepackets is essential for achieving on-chip integrated nanocircuits with tightly confined electromagnetic fields towards ultrafast information processing. However, conventional optical techniques have struggled to integrate the necessary components for transferring polariton signals. Here, we address this challenge by electrically generating, manipulating, and reading out terahertz graphene plasmon-polariton wavepackets on-chip. By injecting an electrical pulse into graphene via an ohmic contact, we achieve coherent conversion of the pulse into a plasmon wavepacket exhibiting a pulse duration of 1.2 ps and extreme three-dimensional spatial confinement within a volume of $2.1 \times 10^{-18} m^3$. We reveal the transport properties of plasmons along graphene ribbons in different dielectric environments, providing a basis for designing graphene plasmonic circuits. Furthermore, we find that the conversion efficiency between the electrical pulses and plasmon wavepackets reaches ~30% thanks to the absence of a momentum mismatch. With unprecedented controllability, our platform represents a significant advance in on-chip handling of plasmonic signals in various van der Waals heterostructures.

cond-mat.mes-hall↗

arXiv2024

Control of 2D plasmons in the topological insulator Bi2Se3 with highly crystalline C60 overlayers

Topological Insulators (TIs) present an interesting materials platform for nanoscale, high frequency devices because they support high mobility, low scattering electronic transport within confined surface states. However, a robust methodology to control the properties of surface plasmons in TIs has yet to be developed. We propose that charge transfer between Bi$_2$Se$_3$ and crystalline C$_{60}$ films may provide tunable control of the two-dimensional plasmons in Bi$_2$Se$_3$. We have grown heterostructures of Bi$_2$Se$_3$/C$_{60}$ with exceptional crystallinity. Electron energy loss spectroscopy (EELS) reveals significant hybridisation of $π$ states at the interface, despite the expectation for only weak van der Waals interactions, including quenching of 2D plasmons. Momentum-resolved EELS measurements are used to probe the plasmon dispersion, with Density Functional Theory predictions providing an interpretation of results based on interfacial charge dipoles. Our measurements suggest a robust methodology for tuneable TI interfaces that can be engineered for plasmonic applications in computing, communications and sensing.

cond-mat.mes-hall↗

arXiv2024

Andreev Reflection in the Quantum Hall Regime at an Al/InAs Junction on a Cleaved Edge

We have fabricated a superconductor/semiconductor (S/Sm) junction composed of Al and InAs using cleaved edge overgrowth. By exploiting the unique geometry with a thin Al/Pt/Al trilayer formed on the side surface of an in-situ cleaved heterostructure wafer containing an InAs quantum well, we achieve a superconducting critical field of 5 T, allowing superconductivity and quantum Hall (QH) effects to coexist down to Landau-level filling factor nu = 3. Andreev reflection at zero magnetic field shows a conductance enhancement that is limited solely by the Fermi velocity mismatch, demonstrating a virtually barrier-free, high-quality S/Sm junction. Bias spectroscopy in the QH regime reveals the opening of a superconducting gap, with the reduced downstream resistance demonstrating that the electron-hole Andreev conversion probability consistently exceeds 50%. Our results, obtained in a new experimental regime characterized by a clean edge-contacted junction with a superconducting electrode narrower than the coherence length, open new avenues for both theoretical and experimental studies of the interplay between superconductivity and QH effects and the engineering of exotic quasiparticles.

cond-mat.mes-hall↗

arXiv2024

Mach-Zehnder interference of fractionalized electron-spin excitations

Inter-channel Coulomb interaction mixes charge excitations in copropagating quantum Hall edge channels, generating coupled excitation eigenmodes propagating at different speeds. This mode transformation causes an electron state to split into fragments, corresponding to the Tomonaga-Luttinger liquid model of a chiral one-dimensional electronic system. This paper reports the coherent evolution of an electron state under the fractionalization process in a Mach-Zehnder interferometer employing copropagating spin-up and spin-down channels as the interference paths. We observe the interference visibility oscillations as a function of the voltage bias applied between the interference paths, which are attributed to the second-order interference between the fractionalized spin excitations with different phase evolutions. This observation contrasts with the single-particle picture that predicts only the first-order interference, reflecting the phase evolution of a spin-up and spin-down superposition state during the one-way transport. The second-order interference manifests the coherent splitting of the superposition state to the mutually independent fast and slow excitations. Our observation offers the fractionalization process as a novel way to encode an electron spin state to spatially separated fragments.

cond-mat.mes-hall↗

arXiv2022

Coherent-Incoherent Crossover of Charge and Neutral Mode Transport as Evidence for the Disorder-Dominated Fractional Edge Phase

Couplings between topological edge channels open electronic phases possessing nontrivial eigenmodes far beyond the noninteracting-edge picture. However, inelastic scatterings mask the eigenmodes' inherent features, often preventing us from identifying the phases, as is the case for the quintessential Landau-level filling factor v = 2/3 edge composed of the counter-propagating v = 1/3 and 1 (1/3-1) channels. Here, we study the coherent-incoherent crossover of the 1/3-1 channels by tuning the channel length in-situ using a new device architecture comprising a junction of v = 1/3 and 1 systems, the particle-hole conjugate of the 2/3 edge. We successfully observed the concurrence of the fluctuating electrical conductance and the quantized thermal conductance in the crossover regime, the definitive hallmark of the eigenmodes in the disorder-dominated edge phase left experimentally unverified.

cond-mat.mes-hall↗

arXiv2021

Parity-dependent shot noise and spin-flip relaxation process in a hybrid superconductor-nanowire quantum dot

We report shot noise measurements for a quantum dot formed in an InAs nanowire suspended between superconducting electrodes. We find a clear alternation for the shot noise value in the Coulomb blockade regime between even and odd electron occupation in the dot, indicating that super-Poissonian (Poissonian) shot noise with the Fano factor reaching around 2 (1) occurs for even (odd) parity. With increasing magnetic field, the parity effect disappears and all the regimes show the Fano factor of around 1. The whole observation in our experiments quantitatively agrees with simulation obtained from full-counting statistics of cotunneling including spin-flip relaxation process, which corresponds to modelling electron motion in a quantum dot with strong spin-orbit interaction.

cond-mat.mes-hall↗

arXiv2021

Electrical tuning of the spin-orbit interaction in nanowire by transparent ZnO gate grown by atomic layer deposition

We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform magneto-transport measurements and find a crossover from weak localization to weak antilocalization effect with increasing gate voltage, which demonstrates that the Rashba spin-orbit coupling is tuned by the gate electrode. The efficiency of the gate tuning of the spin-orbit interaction is higher than those obtained for two-dimensional electron gas, and as high as that for a gate-all-around nanowire metal-oxide-semiconductor field-effect transistor that was previously reported. The spin-orbit interaction is discussed in line with not only conventionally used one-dimensional model but also recently proposed model that considers effects of microscopic band structures of materials.

cond-mat.mes-hall↗

arXiv2021

Atomic Layer Deposition of Aluminum (111) Thin Film by Dimethylethylaminealane Precursor

We report the growth of aluminum (111) thin film by atomic layer deposition (ALD) technique with dimethylethylaminealane (DMEAA) as a precursor. It is found that the metallic underlayer is essential to grow uniform aluminum films by DMEAA precursor. As a titanium thin film is used as the underlayer, grown aluminum thin film shows (111) orientation irrespective of substrates. The lattice constant and superconducting transition temperature of the aluminum thin films are the same as the bulk one. These findings suggest that ALD technique provides high quality of the aluminum thin films and have potential for the applications of superconducting devices. We discuss ALD technique with DMEAA precursor is the promising method for fabricating vertical small Josephson tunnel junctions, which can be used as the superconducting quantum bits.

cond-mat.supr-con↗

arXiv2021

Andreev reflection of fractional quantum Hall quasiparticles

Electron correlation in a quantum many-body state appears as peculiar scattering behaviour at its boundary, symbolic of which is Andreev reflection at a metal-superconductor interface. Despite being fundamental in nature, dictated by the charge conservation law, however, the process has had no analogues outside the realm of superconductivity so far. Here, we report the observation of an Andreev-like process originating from a topological quantum many-body effect instead of superconductivity. A narrow junction between fractional and integer quantum Hall states shows a two-terminal conductance exceeding that of the constituent fractional state. This remarkable behaviour, while theoretically predicted more than two decades ago but not detected to date, can be interpreted as Andreev reflection of fractionally charged quasiparticles. The observed fractional quantum Hall Andreev reflection provides a fundamental picture that captures microscopic charge dynamics at the boundaries of topological quantum many-body states.

cond-mat.mes-hall↗

arXiv2019

Active spatial control of terahertz graphene plasmons by tailoring carrier density profile

Graphene offers a possibility for actively controlling plasmon confinement and propagation by tailoring its spatial conductivity pattern. However, implementation of this concept has been hampered because uncontrollable plasmon reflection is easily induced by inhomogeneous dielectric environment. In this work, we demonstrate full electrical control of plasmon reflection/transmission at electronic boundaries induced by a zinc-oxide-based dual gate, which is designed to minimize the dielectric modulation. Using Fourier-transform infrared spectroscopy, we show that the plasmon reflection can be varied continuously with the carrier density difference between the adjacent regions. By utilizing this functionality, we show the ability to control size, position, and frequency of plasmon cavities. Our approach can be applied to various types of plasmonic devices, paving the way for implementing a programmable plasmonic circuit.

physics.app-ph↗

arXiv2019

Nano-mosaic of Topological Dirac States on the Surface of Pb5Bi24Se41 Observed by Nano-ARPES

We have performed scanning angle-resolved photoemission spectroscopy with a nanometer-sized beam spot (nano-ARPES) on the cleaved surface of Pb5Bi24Se41, which is a member of the (PbSe)5(Bi2Se3)3m homologous series (PSBS) with m = 4 consisting of alternate stacking of the topologically-trivial insulator PbSe bilayer and four quintuple layers (QLs) of the topological insulator Bi2Se3. This allows us to visualize a mosaic of topological Dirac states at a nanometer scale coming from the variable thickness of the Bi2Se3 nano-islands (1-3 QLs) that remain on top of the PbSe layer after cleaving the PSBS crystal, because the local band structure of topological origin changes drastically with the thickness of the Bi2Se3 nano-islands. A comparison of the local band structure with that in ultrathin Bi2Se3 films on Si(111) gives us further insights into the nature of the observed topological states. This result demonstrates that nano-ARPES is a very useful tool for characterizing topological heterostructures.

cond-mat.mes-hall↗

arXiv2017

Planar Hall effect from the surface of topological insulators

A prominent feature of topological insulators (TIs) is the surface states comprising of spin-nondegenerate massless Dirac fermions. Recent technical advances have made it possible to address the surface transport properties of TI thin films while tuning the Fermi levels of both top and bottom surfaces across the Dirac point by electrostatic gating. This opened the window for studying the spin-nondegenerate Dirac physics peculiar to TIs. Here we report our discovery of a novel planar Hall effect (PHE) from the TI surface, which results from a hitherto-unknown resistivity anisotropy induced by an in-plane magnetic field. This effect is observed in dual-gated devices of bulk-insulating Bi$_{2-x}$Sb$_{x}$Te$_{3}$ thin films, in which both top and bottom surfaces are gated. The origin of PHE is the peculiar time-reversal-breaking effect of an in-plane magnetic field, which anisotropically lifts the protection of surface Dirac fermions from back-scattering. The key signature of the field-induced anisotropy is a strong dependence on the gate voltage with a characteristic two-peak structure near the Dirac point which is explained theoretically using a self-consistent T-matrix approximation. The observed PHE provides a new tool to analyze and manipulate the topological protection of the TI surface in future experiments.

cond-mat.mes-hall↗