arXiv subjects

Satyaprakash Sahoo

Publications and source records attributed to Satyaprakash Sahoo.

At least 19 recordsLinked to original sources

arXiv2026

A self-compliant selector-free memory with functional bismuth ferrite

In-memory computing requires selector-free operation, low variability, and stable multilevel switching, all of which remain challenging to achieve in a single system. Here, we demonstrate a robust selector-free memory based on a multiferroic BiFeO3 that combines self-compliance with stable bipolar switching, high yield, long endurance, and extended retention. We observe that BiFeO3 memristive crossbar arrays become self-compliant through a naturally formed TiOx interfacial layer, enabling forming-free bipolar switching without external selector devices, addressing major bottlenecks that have limited the practical deployment of resistive memories. The array delivers stable bipolar switching with a 97% device yield, endurance beyond 105 cycles, and data retention exceeding 105 s with low cycle-to-cycle and device-to-device variability. In addition, the devices exhibit 16 well-separated conductance states, enabling 4-bit multilevel operation via precise pulse-controlled programming for digit visualization in edge applications. Noise measurements reveal predominantly 1/f-type behavior with minimal random telegraph noise, indicating robust conductance stability across the programmable window. These results establish BiFeO3 as a practical materials platform for multibit, selector-free crossbar memories offering high reliability, making it well-suited for scalable computing architectures based on functional materials.

cond-mat.mes-hall↗

arXiv2026

Interfacial Charge Transfer Driven Enhanced Transport and Thermal Stability in Graphene-MoS2 Vertical Heterostructure Field-Effect Transistors

In this work, we demonstrate interfacial charge transfer-driven transport enhancement in few-layer graphene monolayer MoS2 vertical heterostructure field-effect transistor. Raman scattering and Raman intensity mapping results confirm the successful stacking of FL graphene on ML MoS2. Pronounced photoluminescence (PL) quenching of MoS2 and spectral redshift in the heterostructure suggest efficient interlayer charge transfer and strong electronic coupling at the vdW interface. Electrical measurements show enhanced drain current, field-effect mobility, and conductivity in Gr-MoS2 device compared to pristine MoS2 transistor with Ag contacts. The energy band considerations under equilibrium and gate bias conditions suggest improved Fermi-level alignment and reduced effective Schottky barrier effects at the graphene-MoS2 interface, enabling efficient carrier injection. Temperature-dependent transport (300-400 K) reveals phonon-dominated mobility and conductivity degradation in both devices; however, the heterostructure exhibits significantly suppressed performance degradation. The mobility enhancement factor increases from ~1.6 at 300 K to ~4.0 at 400 K, accompanied by a corresponding improvement in conductivity stability, demonstrating superior thermal robustness for the Gr-MoS2 heterostructure. The power-law analysis indicates that transport in pristine MoS2 is influenced by both intrinsic phonon scattering and additional thermally activated extrinsic processes such as contact and interfacial effects, whereas the weaker temperature dependence in the Gr-MoS2 device reflects moderated extrinsic contributions and transport behaviour approaching a predominantly phonon-limited regime. These findings demonstrate graphene contact engineering as a viable pathway toward improved performance and thermally stable two-dimensional semiconductor electronics.

cond-mat.mes-hall↗

arXiv2026

Quantum Resistance in Multilayer Graphene-BiFeO3 Memristor for Brain-Inspired Computing

In the era of big data and the Internet of Things, quantum-level control of conductance states offers a promising route toward high-density data storage and brain-inspired neuromorphic computing. Although quantum conductance (QC) phenomena have been demonstrated in various metal oxide memristors, achieving reliable and precise control over quantized states remains in its infancy. Here, we demonstrate bidirectional quantum conductance states in multifunctional BiFeO3 (BFO) perovskite memristors integrated with multilayer-graphene contacts, enabling higher-order tunability and revealing the potential of perovskite-2D heterostructures for quantum-engineered memory and computing devices. XPS analysis provides detailed insights into oxygen vacancy dynamics in BFO, whereas first-principles density functional theory calculations clearly reveal a strong localized electric field at the graphene-BFO interface. Our devices exhibit current-controlled higher-order QC transitions facilitated by quantum point contact formation, giving rise to quantized conductance states during both SET and RESET processes. Time-lag correlation maps quantify the stochastic evolution of QC states under dynamic voltage-pulse tuning schemes. Notably, the quantized conductance states effectively emulate synaptic potentiation and depression, enabling precise weight modulation for high-accuracy image and digit recognition in convolutional neural networks. These findings establish perovskite-2D heterostructures as promising candidates for QC-driven resistive switching and demonstrate their potential for developing controllable quantum memristors.

cond-mat.mes-hall↗

arXiv2026

CVD grown bilayer MoS2 based artificial optoelectronic synapses for arithmetic computing and image recognition applications

Demand for lower computing power has rapidly increased. In this context, brain-inspired neuromorphic computing, which integrate data storage and processing, has attracted significant attention. Here, our study reveals that field effect transistors fabricated on chemical vapor deposited bilayer (2L) MoS2 films can mimic the functions of biological synapse. These devices demonstrate high level of pair pulse facilitation (PPF), short term to long term memory (STM-to-LTM) transition as well as learning-forgetting-relearning properties. Effect of light intensity, pulse number, pulse width and photon energy on the STM-to-LTM transition is studied. It has been found that the rate of depression of the memory state can be controlled using the gate bias. Electrical and optical energy consumptions per synaptic event are estimated to be as low as 280 fJ and 20 nJ, respectively. Furthermore, photocurrent in these devices is observed to increase linearly with the number of the excitation pulses. This property has been exploited to demonstrate different arithmetic operations by the device. Moreover, these devices show great potential for image recognition. Artificial neural network simulation has returned an image recognition accuracy of ~85%. All these findings show a great prospect of 2L-MoS2 for developing low power, transparent and flexible neuromorphic devices.

cond-mat.mtrl-sci↗

arXiv2023

A facile direct device transfer of monolayer MoS2 towards improvement in transistor performances

Transfer techniques based on two dimensional (2D) materials and devices offer immense potential towards their industrial integration with the existing silicon based electronics. To achieve high quality devices, there is an urgent requirement for the etching-free, and clean transfer that retain original semiconducting properties of layered channel materials. In parallel, transfer of metal electrode arrays on the 2D semiconductors also attract attention towards large-scale integration for commercial applications. Here, we demonstrate a facile PMMA-assisted etching-free one-step approach to transfer both 2D channels and metal electrodes without damaging the contact region. The direct device transfer (DDT) technique enables residue-free monolayer MoS2 as channel material towards achieving doping-free intrinsic transistors with enhanced performances. The crystalline quality, strain relaxation, and interfacial coupling effects are studied using Raman and photoluminescence spectra with spatial mapping. Post device transfer, a reduced pinning effect is observed by the effective modulation of gate tunable drain currents in MoS2 transistors at room temperature. Furthermore, the extracted Schottky barrier heights, temperature dependence of threshold voltage shifts, hysteresis evolution, and mobility enhancements validates the improved transistor performances in transferred devices. The proposed DDT method can be utilized to directly transfer array of devices of 2D materials and heterostructures skipping various cumbersome steps in between and hence could offer high performance reliable electronic applications.

cond-mat.mes-hall↗

arXiv2023

Thermally-driven Multilevel Non-volatile Memory with Monolayer MoS2 for Neuro-inspired Artificial Learning

The demands of modern electronic components require advanced computing platforms for efficient information processing to realize in-memory operations with a high density of data storage capabilities towards developing alternatives to von Neumann architectures. Herein, we demonstrate the multifunctionality of monolayer MoS2 mem-transistors which can be used as a high-geared intrinsic transistor at room temperature; however, at a high temperature (>350 K), they exhibit synaptic multi-level memory operations. The temperature-dependent memory mechanism is governed by interfacial physics, which solely depends on the gate field modulated ion dynamics and charge transfer at the MoS2/dielectric interface. We have proposed a non-volatile memory application using a single FET device where thermal energy can be ventured to aid the memory functions with multi-level (3-bit) storage capabilities. Furthermore, our devices exhibit linear and symmetry in conductance weight updates when subjected to electrical potentiation and depression. This feature has enabled us to attain a high classification accuracy while training and testing the Modified National Institute of Standards and Technology datasets through artificial neural network simulation. This work paves the way for new avenues in 2D semiconductors toward reliable data processing and storage with high-packing density arrays for brain-inspired artificial learning.

cond-mat.mes-hall↗

arXiv2020

Fast transient charge trapping in salt-aided CVD synthesized monolayer MoS2 field-effect transistor

Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a large-scale synthesis of pristine quality monolayer MoS2 but also advanced nanofabrication and characterization methods for investigation of intrinsic device performances. Here, we conduct a meticulous investigation of the fast transient charge trapping mechanisms in field-effect transistors (FETs) of high-quality CVD MoS2 monolayers grown by a salt-driven method. To unfold the intrinsic transistor behavior, an amplitude sweep pulse I~V methodology is adapted with varying pulse widths. A significant increase in the field-effect mobility up to ~100% is achieved along with a hysteresis-free transfer characteristic by applying the shortest pulse. Moreover, to correlate these results, a single pulse time-domain drain current analysis is carried out to unleash the fast and slow transient charge trapping phenomena. Furthermore, rigorous density functional theory (DFT) calculations are implemented to inspect the effects of the Schottky barrier and metal-induced gap states between drain/source electrode and MoS2 for the superior carrier transport. Our findings on the controllable transient charge trapping mechanisms for estimation of intrinsic field-effect mobility and hysteresis-free transfer characteristic in salt-assisted CVD-grown MoS2 FETs will be beneficial for future device applications in complex memory, logic, and sensor systems.

cond-mat.mes-hall↗

arXiv2020

Thermal conductivity of free-standing silicon nanowire using Raman spectroscopy

Low dimensional systems, nanowires, in particular, have exhibited excellent optical and electronic properties. Understanding the thermal properties in semiconductor nanowires is very important for their applications in their electronic devices. In the present study, the thermal conductivity of a freestanding silicon nanowire (NW) is estimated employing the Raman spectroscopy. The advantage of this technique is that the light source (laser) can be used both as heating and excitation source. The variations of the first-order Raman peak position of the freestanding silicon NW with respect to temperature and laser power are carried out. A critical analysis of effective laser power absorbed by exposed silicon NW, the detailed Raman study along with the concept of longitudinal heat distribution in silicon NW, the thermal conductivity of the freestanding silicon NW of 112 nm diameter is estimated to be ~53 W/m.K.

physics.app-ph↗

arXiv2019

Manipulation of exciton and trion quasiparticles in monolayer WS2 via charge transfer

Charge doping in transition metal dichalcogenide is currently a subject of high importance for future electronic and optoelectronic applications. Here we demonstrate chemical doping in CVD grown monolayer (1L) of WS2 by a few commonly used laboratory solvents by investigating the room temperature photoluminescence (PL). The appearance of distinct trionic emission in the PL spectra and quenched PL intensities suggest n-type doping in WS2. The temperature-dependent PL spectra of the doped 1L-WS2 reveal significant enhancement of trion emission intensity over the excitonic emission at low temperature indicating the stability of trion at low temperature. The temperature dependent exciton-trion population dynamic has been modeled using the law of mass action of trion formation. These results shed light on the solution-based chemical doping in 1L WS2 and its profound effect on the photoluminescence which is essential for the control of optical and electrical properties for optoelectronics applications.

cond-mat.mes-hall↗

arXiv2018

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through chemical vapor deposited (CVD) multilayer MoS2 (~7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5 - 2 % has been observed, corresponding to spin polarization of 5 - 10 % in the measured temperature range of 300 - 75 K. First principles calculations for ideal junctions results in a tunnel magnetoresistance up to 8 %, and a spin polarization of 26 %. The detailed measurements at different temperatures and bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomenon that control their performance.

cond-mat.mtrl-sci↗

arXiv2014

Structural phase transition of ternary high-k dielectric SmGdO3: Evidence from ADXRD and Raman Spectroscopic Studies

High-pressure synchrotron based angle dispersive x-ray diffraction (ADXRD) studies were carried out on SmGdO3 (SGO) up to 25.7GPa at room temperature. ADXRD results indicated a reversible pressure-induced phase transition from ambient monoclinic to hexagonal phase at about 8.9 GPa. The observed pressure-volume data were fitted into the third order Birch-Murnaghan equation of state yielding zero pressure bulk moduli B0 = 132(22) and 177(22) GPa for monoclinic and hexagonal phases, respectively. Pressure dependent micro-Raman spectroscopy further confirmed the phase transition. The mode Gruneisen parameters and pressure coefficients for different Raman modes corresponding to each individual phase of SGO were calculated.

cond-mat.mtrl-sci↗

arXiv2014

Surface Energy Engineering for Tunable Wettability through Controlled Synthesis of MoS2

MoS2 is one of the important members of transition metal dichalogenides which is emerging as a potential 2D atomically thin layered material for low power electronic and opto-electronic applications. However, for MoS2 a critical fundamental question of significant importance is how the surface energy and hence the wettability is altered in nanoscale -- in particular, the role of crystal quality in low dimensions. Present work reports the synthesis of large area MoS2 films on insulating substrates with different surface morphology via vapor phase deposition by varying the growth temperatures. The crystallinity of the samples is examined by transmission electron microscopy and Raman spectroscopy. From contact angle measurements, it is possible to correlate the wettability with crystallinity at nanoscale. The specific surface energy for few layers thick MoS2 is estimated to be around 46.5 mJ/m2. Our results shed light on the MoS2-water interaction which is significant for developing important devices based on MoS2 coated surfaces for micro-fluidic applications.

cond-mat.mes-hall↗

arXiv2014

Temperature dependent Raman study of phonons of different symmetries in single crystal Bi2Se3

High quality single crystals of Bi2Se3 were grown using a modified Bridgman technique, the detailed study were carried out using Raman spectroscopy and characterized by Laue diffraction and high resolution transmission electron microscopy. Polarized Raman scattering measurements were also carried out, and both the A1g and A2g phonon modes showed strong polarization effect, which is consistent with the theoretical prediction. The temperature dependent study (in the temperature range 83 K to 523 K of Raman active modes were reported and observed to follow a systematic red shift. The frequency of these phonon modes are found to vary linearly with temperature and can be explained by first order temperature co-efficient. The temperature co-efficient for A11g, E2g and A21g modes were estimated to be -1.44*10-2, -1.94*10-2 and -1.95*10-2cm-1/K respectively.

cond-mat.mtrl-sci↗

arXiv2013

Phonons correlation with magnetic excitations in weak ferromagnet YCrO3

We report on the temperature dependent Raman spectroscopic studies of orthorombic distorted perovskite YCrO3 in the temperature range of 20-300K. Temperature dependence of DC-magnetization measurement under field cooled and zero field cooled modes confirmed the transition temperature (TN ~142K) and anomalous characteristic temperature (T* ~60K), above which magnetization tends to saturate. Magnetization isotherm recorded below TN at 125K shows clear loop opening without magnetization saturation up to 20kOe, indicating the coexistence of antiferromagnetic (AFM) interaction with weak ferromagnetic (WFM) phase. Mean field calculation for exchange constants further confirms the complex magnetic phase below TN. Temperature evolution of lineshape parameters of selected modes (associated with the octahedral rotation and A-shift in the unit cell) revealed anomalous phonon shift near Cr3+ magnetic ordering temperature (TN ~142K). Additional phonon anomaly was identified at T* ~60K in agreement with the magnetization results and reflects the change in spin dynamics, plausibly due to the change in Cr-spin configuration. Moreover, the positive and negative shift in Raman frequency below TN revel the existence of competing WFM and AFM exchanges. The phonon shift of B3g (3)-octahedral rotation mode fairly scaled with the square of sublattice magnetization from TN to T*, below which it start to depart from theconventional behaviour and need further attention. This correlation between magnetic and Raman data elucidate the spin-phonon coupling owing to the multiferroic phenomenon in YCrO3.

cond-mat.mtrl-sci↗

arXiv2013

Optical Properties and Raman Studies of Partially Edge Terminated Vertically Aligned Nanocrystalline MoS2 Thin Film

The optical and vibrational properties of nanocrystalline thin films of MoS2, comprised of a mixture of edge terminated vertically aligned (ETVA) and (001)-oriented regions, on large insulating substrates are reported. From high resolution transmission electron microscopy (HRTEM), the average size of ETVA nanocrystals were ~5 nm and each nanocrystal consisted of only 3 to 5 monolayers of MoS2. The films were highly transparent (~80%) but the percent of transmittance decreased as the energy of the incident light approached to the band gap. Additionally, weak excitonic peaks were observed both in the absorption and transmission spectra. The room temperature Raman study showed that both the E12g and A1g modes were significantly broader, and a few additional Raman modes were observed when compared to bulk MoS2. The broadening of the A1g mode was analyzed using the phonon-confinement model and the calculated particle size was in good agreement with TEM observations. Moreover, the temperature coefficient of the A1g mode was estimated from the temperature dependent Raman studies.

cond-mat.mes-hall↗

arXiv2013

Temperature Dependent Raman Studies and Thermal Conductivity of Few Layer MoS2

We report on the temperature dependence of in-plane E2g and out of plane A1g Raman modes in high quality few layers MoS2 (FLMS) prepared using a high temperature vapor-phase method. The materials obtained were investigated using transmission electron microscopy. The frequencies of these two phonon modes were found to vary linearly with temperature. The first order temperature coefficients for E2g and A1g modes were found to be 1.32*10-2 and 1.23*10-2 cm-1/K, respectively. The thermal conductivity of the suspended FLMS at room temperature was estimated to be about 52 W/mK.

cond-mat.mes-hall↗

arXiv2012

Reduced graphene oxide as ultra fast temperature sensor

We demonstrate the excellent temperature sensing property of a chemically synthesized reduced graphene oxide (rGO). It is found that with increase in temperature from 80 to 375K, the resistivity of reduced graphene oxide monotonically decreases. The ultra-fast temperature sensing property is demonstrated by keeping and removing a block of ice under the rGO sensor, which shows the resistance of rGO increases by 15% in 592 miliseconds and recovers in 8.92 seconds. The temperature sensing of rGO is compared with a standard platinum thermo sensor (Pt 111) and found the sensitivity is much better in rGO.

cond-mat.mes-hall↗

arXiv2009

Phonon confinement and substitutional disorder in Cd1-xZnxS Nanocrystals

1LO optical phonons in free-standing mixed Cd1-xZnxS nanocrystals, synthesized using chemical precipitation, are investigated using Raman spectroscopy. As expected for the nanocrystals, the 1-LO modes are found to appear at slightly lower wavenumbers than those in the bulk mixed crystals and exhibit one mode behavior. On the other hand, the line broadening is found to be much more than that can be accounted on the basis of phonon confinement. From the detailed line shape analysis it turns out that the substitutional disorder in the mixed crystals contributes much more to the line broadening than the phonon confinement. The linewidth arising from these mechanisms are also extracted from the analysis.

cond-mat.mtrl-sci↗