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Satyaprasad P Senanayak

Publications and source records attributed to Satyaprasad P Senanayak.

2 recordsLinked to original sources

Tuning the Optoelectronics of Mixed-Semiconductors through the interplay of Quantum confinement and Stoichiometry Engineering

All-inorganic cesium lead bromide (CsPbBr3) nanocrystals (NCs) have established themselves as an emerging semiconductor for next-generation optoelectronic technologies due to their unique combination of properties, such as near unity photoluminescence quantum yields, narrow color pure emission, and exceptional defect tolerance. Although size-dependent optical signatures of these NCs are well reported, the complexity of mixed ionic-electronic transport remains largely unexplored. In this study, we provide a comprehensive analysis of size-dependent charge transport by decoupling ionic and electronic transport dynamics through carefully designed transient current and space charge limited current measurements. By employing NCs of different sizes ranging from 5.6 nm to 11.3 nm in thin films, we provide a comprehensive understanding of quantum confinement effects and related synthetic chemistry. Contrary to popular beliefs of quantum confinement and band gap broadening, our results demonstrate that the smallest NCs exhibit the most efficient transport characteristics, evidenced by the lowest activation energy (hole activation energy = 78 meV) for hole transport and the highest barrier for vacancy-mediated ion migration (ion activation energy = 370 meV). This work paves a way forward for perovskite-based efficient quantum devices, by demonstrating that moving into a strong quantum confinement regime, a superior charge transport can be facilitated, when supported by carefully tailored stoichiometry.

cond-mat.mtrl-sci↗

Substitution of Lead with Tin Suppresses Ionic Transport in Halide Perovskite Optoelectronics

Despite the rapid rise in the performance of a variety of perovskite optoelectronic devices with vertical charge transport, the effects of ion migration remain a common and longstanding Achilles heel limiting the long-term operational stability of lead halide perovskite devices. However, there is still limited understanding of the impact of tin (Sn) substitution on the ion dynamics of lead (Pb) halide perovskites. Here, we employ scan-rate-dependent current-voltage measurements on Pb and mixed Pb-Sn perovskite solar cells to show that short circuit current losses at lower scan rates, which can be traced to the presence of mobile ions, are present in both kinds of perovskites. To understand the kinetics of ion migration, we carry out scan-rate-dependent hysteresis analyses and temperature-dependent impedance spectroscopy measurements, which demonstrate suppressed ion migration in Pb-Sn devices compared to their Pb-only analogues. By linking these experimental observations to first-principles calculations on mixed Pb-Sn perovskites, we reveal the key role played by Sn vacancies in increasing the iodide ion migration barrier due to local structural distortions. These results highlight the beneficial effect of Sn substitution in mitigating undesirable ion migration in halide perovskites, with potential implications for future device development.

cond-mat.mtrl-sci↗