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Saurabh Lodha

Publications and source records attributed to Saurabh Lodha.

At least 19 recordsLinked to original sources

A Retinomorphic Optical Spiking Neuron for Camouflaged Object Detection

Advanced vision systems require retinomorphic, energy-efficient spike-based preprocessing of dynamic visual scenes. Here, we demonstrate multiple retinal preprocessing functionalities by leveraging a Hodgkin-Huxley-based optical spiking neuron (OSHN) that incorporates a two-dimensional anti-ambipolar phototransistor operated in the subthreshold regime to minimize power consumption. OSHN exhibits wavelength- and intensity-sensitive spike encoding with energy consumption per spike of 0.9 pJ under dark, 2 pJ at 480 nm (mid wavelength, M), and 24.5 pJ at 800 nm (long wavelength, L). The low (biological)-to-high spiking rate (0 - 2 kHz) with substantially faster response times (4.2 $μ$s - 1.25 ms) than the human retina (30 ms - 60 ms), reveal OSHN's fast decision-making capability. OSHN facilitates concurrent spectral-spatial processing by emulating retinal antagonistic center-surround receptive fields (CSRFs) at a single wavelength (480 nm or 800 nm) with varying intensities, visual adaptation (at 480 nm) to prevent system saturation, and L-M cone opponency in midget ganglion cells. Finally, a CSRF-augmented spiking neural network (SNN) has been developed for camouflaged object detection, achieving 4.4%, 10.4%, and 28.4% improvements in accuracy over conventional SNN on FMNIST, COD10K, and synthetic camouflaged datasets, outperforming existing photoactive spiking architectures while enabling event-driven intelligent edge vision systems.

physics.app-ph

ALD W-Doped SnO$_2$ TFTs for Indium-Free BEOL Electronics

This work reports back-end-of-line (BEOL) compatible, thin-film transistors (TFTs) with sub-10 nm tungsten-doped tin oxide (TWO) channels deposited by atomic layer deposition (ALD) at 150 $^\circ$C. TFTs with undoped SnO$_{\mathrm{x}}$, undoped WO$_{\mathrm{x}}$, and W-doped SnO$_{\mathrm{x}}$ channels with W concentrations of 5% and 10% were investigated. TFT with 10% W doping exhibited the best electrostatic control and overall device performance. Post-fabrication O$_{\mathrm{2}}$ annealing at 300 $^\circ$C for 5 minutes significantly enhanced device characteristics, reducing the subthreshold swing (SS) by nearly 2$\times$, increasing the I$_{\mathrm{on}}$/I$_{\mathrm{off}}$ ratio from $10^7$ to $10^9$, decreasing hysteresis by nearly 3$\times$ and positive bias stress-induced threshold shift by over 2$\times$ to a low value of 93 mV at a stress field of 4 MV/cm. Kinetic Monte Carlo simulations using Ginestra$^{\mathrm{TM}}$ support the experimental observations and attribute the bias instability to charge trapping in the gate dielectric and at the interface. This work demonstrates low-temperature ALD-grown TWO TFTs as a promising indium-free platform for BEOL and monolithic 3D integration.

physics.app-ph

Optomechanical method for characterizing thermal transport across van der Waals interfaces

For the development of nanoscale electronics and photonics using atomically thin two-dimensional (2D) materials, it is important to realize van der Waals (vdW) interfaces with low thermal resistance, to minimize performance reduction caused by heat accumulation. However, characterizing the thermal interface resistance between vdW materials is still a challenge. Here, we introduce a novel optomechanical methodology to characterize the thermal transport across interfaces in 2D heterostructures. We first determine the specific heat and thermal conductivity as the function of temperature for the upper and lower material layers separately and then extract the thermal boundary conductance (TBC) of the heterostructure from its thermal time constant. We obtain a TBC of $2.41 \pm 1.03$ and $4.14 \pm 1.74$~\si{MW m^{2} K^{-1}} for FePS$_3$/WSe$_2$ and MoS$_2$/FePS$_3$ interfaces, respectively, which are comparable to values reported in the literature. Moreover, they agree with a Debye model including the acoustic impedance mismatch of flexural phonons. This work enables efficient thermal management down to the nanoscale and offers new insights into energy dissipation in vdW heterostructures.

physics.app-ph

Electrostatically Controlled Pyrophototronic Effect Enabled Accident Alert System using a Strain-Polarized WS2 Phototransistor

Event-based dynamic light detection, specifically in low illumination power environments, is a critical requirement in autonomous vehicles. This work reports low optical power photodetection through the dynamic pyrophototronic effect in an ultra-thin 2D WS2 phototransistor. A four-stage pyrophototronic photoresponse has been realized through biaxial strain-polarization of the non-centrosymmetric (5-layer) WS2 channel using a sub-wavelength, nanopatterned hBN gate dielectric. Presence of strain in WS2 has been verified through extensive spectroscopic characterization and that of strain-induced charge polarization through density functional theory calculations as well as piezo force microscopy. The pyrophototronic effect boosts dynamic photoresponsivity (0.7 A/W) and detectivity (1.2x10^(15) Jones cm^(-1)) by up to 8x and enhances the photodetection speed by 3x over the non-patterned (unstrained) phototransistor, demonstrating a path to ameliorating the responsivity-speed trade-off in 2D photodetectors. Analysis of gate voltage, wavelength, and optical power dependence of the pyrophototronic current through measurements and band physics highlights its prominence under low channel population of electrostatically- or optically-induced free carriers. Gate tunability of the pyrophototronic current has been leveraged to design an optical spike-triggered dynamic accident alert system with speed-specific control for self-driving applications under low light conditions.

physics.app-ph

Vertically Integrated Dual-memtransistor Enabled Reconfigurable Heterosynaptic Sensorimotor Networks and In-memory Neuromorphic Computing

Neuromorphic in-memory computing requires area-efficient architecture for seamless and low latency parallel processing of large volumes of data. Here, we report a compact, vertically integrated/stratified field-effect transistor (VSFET) consisting of a 2D non-ferroelectric MoS$_2$ FET channel stacked on a 2D ferroelectric In$_2$Se$_3$ FET channel. Electrostatic coupling between the ferroelectric and non-ferroelectric semiconducting channels results in hysteretic transfer and output characteristics of both FETs. The gate-controlled MoS$_2$ memtransistor is shown to emulate homosynaptic plasticity behavior with low nonlinearity, low epoch, and high accuracy supervised (ANN - artificial neural network) and unsupervised (SNN - spiking neural network) on-chip learning. Further, simultaneous measurements of the MoS$_2$ and In$_2$Se$_3$ transistor synapses help realize complex heterosynaptic cooperation and competition behaviors. These are shown to mimic advanced sensorimotor neural network-controlled gill withdrawal reflex sensitization and habituation of a sea mollusk (Aplysia) with ultra-low power consumption. Finally, we show logic reconfigurability of the VSFET to realize Boolean gates thereby adding significant design flexibility for advanced computing technologies.

physics.app-ph

Trion Engineered Multimodal Transistors in Two dimensional Bilayer Semiconductor Lateral Heterostructures

Multimodal device operations are essential to advancing the integration of 2D semiconductors in electronics, photonics, information and quantum technology. Precise control over carrier dynamics, particularly exciton generation and transport, is crucial for finetuning the functionality of optoelectronic devices based on 2D semiconductor heterostructure. However, the traditional exciton engineering methods in 2D semiconductors are mainly restricted to the artificially assembled vertical pn heterostructures with electrical or strain induced confinements. In this study, we utilized bilayer 2D lateral npn multijunction heterostructures with intrinsically spatially separated energy landscapes to achieve preferential exciton generation and manipulation without external confinement. In lateral npn FET geometry, we uncover unique and nontrivial properties, including dynamic tuning of channel photoresponsivity from positive to negative. The multimodal operation of these 2D FETs is achieved by carefully adjusting electrical bias and the impinging photon energy, enabling precise control over the trions generation and transport. Cryogenic photoluminescence measurement revealed the presence of trions in bilayer MoSe2 and intrinsic trap states in WSe2. Measurements in different FET device geometries show the multifunctionality of 2D lateral heterostructure phototransistors for efficient tuning and electrical manipulation of excitonic characteristics. Our findings pave the way for developing practical exciton-based transistors, sensors, multimodal optoelectronic and quantum technologies

physics.app-ph

Electric field management in $β$-$Ga_2O_3$ vertical Schottky diodes using high-k bismuth zinc niobium oxide

In this work, we have integrated bismuth zinc niobium oxide (BZN), a high-k dielectric material, in metal-insulator-semiconductor (MIS) and field-plated metal-semiconductor (FP-MS) Schottky barrier diodes on $β$-$Ga_2O_3$. This increases the breakdown voltage ($V_{BR}$) from 300 V to 600 V by redistributing the electric fields, leveraging the high permittivity of BZN (k ~210). Enhancement in Schottky barrier height, by approximately 0.14 eV for MIS and 0.28 eV for FP-MS devices, also contributes to the improved $V_{BR}$. BZN inclusion has minimal impact on specific on-resistance ($R_{on,sp}$). Additionally, the devices display excellent current-voltage characteristics with ideality factors close to unity and an on/off current ratio greater than 1010. This work presents the most significant $V_{BR}$ enhancement reported-to-date for MIS devices on $β$-$Ga_2O_3$ without compromising turn-on voltage and $R_{on,sp}$. A comparison of FP-MS and MIS devices shows that FP-MS outperforms MIS in terms of lower $R_{on,sp}$, higher Schottky barrier height, and improved VBR.

physics.app-ph

Monolithic beta-Ga2O3 Bidirectional MOSFET

We report a monolithic bidirectional dual-gate metal-oxide-semiconductor field effect transistor (MOSFET) fabricated on epitaxially grown beta-Ga2O3, demonstrating efficient two-way conduction and blocking. It features two independently controlled gates and operates in four distinct modes, offering flexibility in managing current and voltage in the first and third quadrants. This versatility makes it ideal for various power conversion system applications. The device operates at a low negative threshold voltage (~-2.4 V for both gates) with a zero turn-on drain voltage and an on-resistance of approximately 500 ohm-mm. It exhibits a high on/off current ratio of 1e7 in all three conducting modes. In the blocking mode, the device breakdown was measured to be more than +-350 V with a current compliance of 0.5 mA/mm. The estimated breakdown field and power figure of merit for the device are 0.35 MV/cm and 1.6 MW/cm2 respectively.

physics.app-ph

An electroplating-based plasmonic platform for giant emission enhancement in monolayer semiconductors

Two dimensional semiconductors have attracted considerable attention owing to their exceptional electronic and optical characteristics. However, their practical application has been hindered by the limited light absorption resulting from their atomically thin thickness and low quantum yield. A highly effective approach to manipulate optical properties and address these limitations is integrating subwavelength plasmonic nanostructures with these monolayers. In this study, we employed electron beam lithography and electroplating technique to fabricate a gold nanodisc (AuND) array capable of enhancing the photoluminescence (PL) of monolayer MoS$_2$ giantly. Monolayer MoS$_2$ placed on the top of the AuND array yields up to 150-fold PL enhancement compared to that on a gold film. We explain our experimental findings based on electromagnetic simulations.

physics.optics

Electrically Controlled Reversible Strain Modulation in MoS$_2$ Field-effect Transistors via an Electro-mechanically Coupled Piezoelectric Thin Film

Strain can efficiently modulate the bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional mechanical strain-application methodologies that rely on flexible, patterned or nano-indented substrates are severely limited by low thermal tolerance, lack of tunability and/or poor scalability. Here, we leverage the converse piezoelectric effect to electrically generate and control strain transfer from a piezoelectric thin film to electro-mechanically coupled ultra-thin 2D MoS$_2$. Electrical bias polarity change across the piezoelectric film tunes the nature of strain transferred to MoS$_2$ from compressive $\sim$0.23% to tensile $\sim$0.14% as verified through peak shifts in Raman and photoluminescence spectroscopies and substantiated by density functional theory calculations. The device architecture, built on a silicon substrate, uniquely integrates an MoS$_2$ field-effect transistor on top of a metal-piezoelectric-metal stack enabling strain modulation of transistor drain current 130$\times$, on/off current ratio 150$\times$, and mobility 1.19$\times$ with high precision, reversibility and resolution. Large, tunable tensile (1056) and compressive (-1498) strain gauge factors, easy electrical strain modulation, high thermal tolerance and substrate compatibility make this technique promising for integration with silicon-based CMOS and micro-electro-mechanical systems.

physics.app-ph

Ultra-Low Power Neuromorphic Obstacle Detection Using a Two-Dimensional Materials-Based Subthreshold Transistor

Accurate, timely and selective detection of moving obstacles is crucial for reliable collision avoidance in autonomous robots. The area- and energy-inefficiency of CMOS-based spiking neurons for obstacle detection can be addressed through the reconfigurable, tunable and low-power operation capabilities of emerging two-dimensional (2D) materials-based devices. We present an ultra-low power spiking neuron built using an electrostatically tuned dual-gate transistor with an ultra-thin and generic 2D material channel. The 2D subthreshold transistor (2D-ST) is carefully designed to operate under low-current subthreshold regime. Carrier transport has been modelled via over-the-barrier thermionic and Fowler-Nordheim contact barrier tunnelling currents over a wide range of gate and drain biases. Simulation of a neuron circuit designed using the 2D-ST with 45 nm CMOS technology components shows high energy efficiency of ~3.5 pJ/spike and biomimetic class-I as well as oscillatory spiking. It also demonstrates complex neuronal behaviors such as spike-frequency adaptation and post-inhibitory rebound that are crucial for dynamic visual systems. Lobula giant movement detector (LGMD) is a collision-detecting biological neuron found in locusts. Our neuron circuit can generate LGMD-like spiking behavior and detect obstacles at an energy cost of <100 pJ. Further, it can be reconfigured to distinguish between looming and receding objects with high selectivity.

cond-mat.mes-hall

Nanomechanical resonators fabricated by atomic layer deposition on suspended 2D materials

Atomic layer deposition (ALD), a layer-by-layer controlled method to synthesize ultrathin materials, provides various merits over other techniques such as precise thickness control, large area scalability and excellent conformality. Here we demonstrate the possibility of using ALD growth on top of suspended 2D materials to fabricate nanomechanical resonators. We fabricate ALD nanomechanical resonators consisting of a graphene/MoS$_2$ heterostructure. Using AFM indentation and optothermal drive, we measure their mechanical properties including Young's modulus, resonance frequency and quality factor, showing similar values as their exfoliated and chemical vapor deposited counterparts. We also demonstrate the fabrication of nanomechanical resonators by exfoliating an ALD grown NbS$_2$ layer. This study exemplifies the potential of ALD techniques to produce high-quality suspended nanomechanical membranes, providing a promising route towards high-volume fabrication of future multilayer nanodevices and nanoelectromechanical systems.

physics.app-ph

Wavelength-Controlled Photocurrent Polarity Switching in BP-MoS$_2$ Heterostructure

Layered two-dimensional van der Waals (vdW) semiconductors and their heterostructures have been shown to exhibit positive photoconductance (PPC) in many studies. A few recent reports have demonstrated negative photoconductance (NPC) as well that can enable broadband photodetection besides multi-level optoelectronic logic and memory. Controllable and reversible switching between PPC and NPC is a key requirement for these applications. This report demonstrates visible-to-near infrared wavelength-driven NPC and PPC, along with reversible switching between the two, in an air stable, high mobility, broadband black phosphorus (BP) field effect transistor (FET) covered with a few layer MoS$_2$ flake. The crossover switching wavelength can be tuned by varying the MoS$_2$ bandgap through its flake thickness and the NPC and PPC photoresponsivities can be modulated using electrostatic gating as well as laser power. Recombination-driven NPC and PPC allows for reversible switching at reasonable time scales of a few seconds. Further, gate voltage-dependent negative persistent photoconductance enables synaptic behavior that is well-suited for optosynaptic applications.

physics.app-ph

Nb$_{2}$O$_{5}$ high-k dielectric enabled electric field engineering of $β$-Ga$_{2}$O$_{3}$ metal-insulator-semiconductor (MIS) diode

We demonstrate an Nb$_{2}$O$_{5}$/$β$-Ga$_{2}$O$_{3}$ metal-insulator-semiconductor (MIS) hetero-junction diode with Nb$_{2}$O$_{5}$ as the high-k dielectric insulator for more efficient electric field management resulting in enhanced breakdown characteristics compared to a $β$-Ga$_{2}$O$_{3}$ Schottky barrier diode. The Nb$_{2}$O$_{5}$ dielectric films were grown using atomic layer deposition and exhibited a high dielectric constant of 50. The high dielectric constant resulted in a 5$\times$ lower electric field at the metal/dielectric interface in the MIS diode compared to the metal/$β$-Ga$_{2}$O$_{3}$ interface in the Schottky barrier diode. With good electron conduction in forward bias enabled by the negative conduction band offset of Nb$_{2}$O$_{5}$ w.r.t $β$-Ga$_{2}$O$_{3}$, the MIS design led to a 3$\times$ improvement in the reverse blocking voltage with a slight trade-off in the specific on-resistance. Overall, a 3.3$\times$ increase in the power figure of merit was observed (3.25 MW/cm$^2$ for the Schottky diode and 10.8 MW/cm$^2$ for the MIS diode). A detailed analysis of the energy band line-up, and the forward and reverse current transport mechanisms are also presented using analytical modeling and 2-D TCAD simulations.

physics.app-ph

Near-Infrared and Visible-range Optoelectronics in 2D Hybrid Perovskite/Transition Metal Dichalcogenide Heterostructures

The application of ultrathin two-dimensional (2D) perovskites in near-infrared and visible-range optoelectronics has been limited owing to their inherent wide bandgaps, large excitonic binding energies and low optical absorption at higher wavelengths. Here, we show that by tailoring interfacial band alignments via conjugation with low-dimensional materials like monolayer transition metal dichalcogenides (TMD), the functionalities of 2D perovskites can be extended to diverse, visible-range photophysical applications. Based on the choice of individual constituents in the 2D perovskite/TMD heterostructures, our first principles calculations demonstrate widely tunable type-II band gaps, carrier effective masses and band offsets to enable an effective separation of photogenerated excitons for enhanced photodetection and photovoltaic applications. In addition, we show the possibilities of achieving a type-I band alignment for recombination based light emitters as well as a type-III configuration for tunnelling devices. Further, we evaluate the effect of strain on the electronic properties of the heterostructures to show a significant strain tolerance, making them prospective candidates in flexible photosensors.

cond-mat.mes-hall

First-principles based simulations of electronic transmission in ReS$_{2}$/WSe$_{2}$ and ReS$_{2}$/MoSe$_{2}$ type-II vdW heterointerfaces

Electronic transmission in monolayer ReS$_{2}$ and ReS$_{2}$ based van der Waals (vdW) heterointerfaces are studied here. Since ReS$_{2}$/WSe$_{2}$ and ReS$_{2}$/MoSe$_{2}$ type-II vdW heterostructures are suitable for near infrared (NIR)/short-wave infrared (SWIR) photodetection, the role of interlayer coupling at the heterointerfaces is examined in this work. Besides, a detailed theoretical study is presented employing density functional theory (DFT) and nonequilibrium Green's function (NEGF) combination to analyse the transmission spectra of the two-port devices with ReS$_{2}$/WSe$_{2}$ and ReS$_{2}$/MoSe$_{2}$ channels and compare the near-equilibrium conductance values.Single layer distorted1T ReS$_{2}$ exhibits formation of parallel chains of 'Re' - 'Re' bonds, leading to in-plane anisotropy. Owing to this structural anisotropy, the charge carrier transport is very much orientation dependent in ReS$_{2}$. Therefore, this work is further extended to investigate the role of clusterized 'Re' atoms in electronic transmission.

cond-mat.mtrl-sci

Enhanced gas sensing performance and all-electrical room temperature operation enabled by a WSe2/MoS2 heterojunction

Gas sensors built using two-dimensional (2D) MoS2 have conventionally relied on a change in field-effect-transistor (FET) channel resistance or a change in Schottky contact/pn homojunction barrier. This report demonstrates, for the first time, an NO2 gas sensor that leverages a gate tunable type II WSe2 (p)/MoS2 (n) heterojunction to realize a 4x enhancement in sensitivity, 8x lower limit of detection and improved dynamic response when compared to an MoS2 FET sensor on the same flake. Comprehensive sensing measurements over a range of analyte concentrations, gate biases and MoS2 flake thicknesses indicate a novel two-fold electrical response to NO2 exposure underlying the enhanced sensitivity of the heterojunction- (i) a series resistance change that leads to an exponential change in thermionic current at high bias, and, (ii) a carrier concentration change that leads to a linear change in interlayer recombination current near zero bias. The heterojunction diode also exhibits fast and tunable recovery under negative gate biasing. All-electrical (gate controlled) sensing and recovery operation at room temperature makes this a simple, low-overhead sensor. The ability to sense tri-nitro toluene (TNT) molecules down to a concentration of 80PPB highlights its potential as a comprehensive chemical sensing platform.

physics.app-ph

Electrically Tunable Room Temperature Hysteresis Crossover in Underlap MoS$_2$ FETs

Clockwise to anti-clockwise hysteresis crossover in current-voltage transfer characteristics of field effect transistors (FETs) with graphene and MoS$_2$ channels holds significant promise for non-volatile memory applications. However such crossovers have been shown to manifest only at high temperature. In this work, for the first time, we demonstrate room temperature hysteresis crossover in few-layer MoS$_2$ FETs by using a gate-drain underlap design to induce a differential response from traps at the MoS$_2$-HfO$_2$ channel-gate dielectric interface to applied gate bias. The appearance of interface trap-driven anti-clockwise hysteresis at high gate voltages in underlap FETs can be unambiguously attributed to the presence of an underlap since transistors with and without the underlap region were fabricated on the same MoS$_2$ channel flake. The underlap design also enables room temperature tuning of the anti-clockwise hysteresis window (by 140$\times$) as well as the crossover gate voltage (by 2.6$\times$) with applied drain bias and underlap length. Comprehensive measurements of the transfer curves in ambient and vacuum conditions at varying sweep rates and temperatures (RT, 45 $^\circ$C and 65 $^\circ$C) help segregate the quantitative contributions of adsorbates, interface traps, and bulk HfO$_2$ traps to the clockwise and anti-clockwise hysteresis.

physics.app-ph