arXiv subjects

Savcho Tinchev

Publications and source records attributed to Savcho Tinchev.

5 recordsLinked to original sources

arXiv2014

Surface resistivity of hydrogenated amorphous carbon films: Existence of intrinsic graphene on its surface

Surface resistivity of hydrogenated amorphous carbon films was measured as a function of the applied electrical field. The measured dependence shows a sharp ambipolar peak near zero gate voltage. Furthermore, we found that in some samples sheet resistance at the peak is as low as 7.5 kΩ/sq. This value is the same order of magnitude as the sheet resistance of a defect free graphene monolayer. Therefore a conclusion is made that an intrinsic graphene with dimensions of at least millimeters exist on the surface of amorphous carbon films. These results can open new perspectives not only for graphene applications, but also for better understanding of this unique material.

cond-mat.mtrl-sci↗

arXiv2014

Intrinsic graphene field effect transistor on amorphous carbon films

Fabrication of graphene field effect transistor is described which uses an intrinsic graphene on the surface of as deposited hydrogenated amorphous carbon films. Ambipolar characteristic has been demonstrated typical for graphene devices, which changes to unipolar characteristic if the surface graphene was etched in oxygen plasma. Because amorphous carbon films can be growth easily, with unlimited dimensions and no transfer of graphene is necessary, this can open new perspective for graphene electronics.

cond-mat.mes-hall↗

arXiv2012

Low temperature crystallization of diamond-like carbon films to graphene by low energy plasma surface treatment

Plasma surface modification was used to fabricate graphene on the top of insulating diamond-like carbon films. It is shown that by a combination of pulsed argon plasma treatment and thermal annealing at 350\degreeC is possible to achieve partial crystallization of amorphous carbon to graphene. The observed Raman spectra are typical for defected graphene - splitted D- and G-peaks and a broad 2D-peak. This result is very encouraging and we hope that by improving this technology it will be possible to fabricate defect-free graphene, which can be used in electronics without transfer to other substrates.

cond-mat.mtrl-sci↗

arXiv2011

Interference effects on the ID/IG ratio of the Raman spectra of diamond-like carbon thin films

Ratio of the intensity of D- Raman peak and G- Raman peak (ID/IG) is often used for characterization of diamond-like carbon films, for example to estimate number and size of the sp2 clusters. In this paper we investigate how the interference effects in the film influence this ratio. It is shown that for films on silicon substrates the distortion of the real ratio can reach 10 % and for films on metals even 40 %. This should be taken into account if some conclusions are made from the measured ID/IG ratio.

cond-mat.mtrl-sci↗

arXiv2011

Crystallization of diamond-like carbon to graphene under low energy ion beam modification

Low-energy ion beam modification was proposed to create graphene on the top of the insulated diamond-like carbon films. In such low-temperature fabrication process the surface of the amorphous carbon could crystallize to graphene as a result of point defect creation and enhanced diffusion caused by the ion bombardment. In the experiment 130 eV argon ion irradiation was used. After the modification the resistivity of the sample surface drops. Raman spectra of the samples measured at 633 nm showed partial crystallization and were similar to the spectra of defected graphene. This result is very encouraging and we hope that by improving this technology it will be possible to fabricate defect-free graphene, which can be used in electronics without transfer to other substrates

cond-mat.mtrl-sci↗