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Saverio Russo

Publications and source records attributed to Saverio Russo.

At least 19 recordsLinked to original sources

Compact Variational Neural Networks for Spectral Inference from a Single Nonlinear 2D Perovskite Photodetector

Spectroscopy conventionally separates optical frequencies before detection, imposing persistent constraints on footprint, complexity and scalability. Here we establish an alternative paradigm in which the nonlinear optoelectronic dynamics of a single two-dimensional perovskite photodetector physically encode the incident optical field and machine learning performs the inverse spectral reconstruction. Using a planar fluorinated phenethylammonium lead iodide (F-PEAI) photodetector, we exploit wavelength- and irradiance-dependent current-voltage signatures arising from the coupled effects of photocarrier generation, trapping, interfacial transport and field-dependent carrier dynamics. A compact variational encoder-decoder preserves the functional and history-dependent structure of these responses by independently projecting forward and reverse voltage sweeps onto a truncated Legendre-polynomial basis before mapping them through a probabilistic latent representation to continuous spectral parameters. Trained on fewer than 400 experimental voltage sweeps, the model generalises to excitation wavelengths excluded from training, reconstructing wavelength with $R^2=0.958$ and a mean absolute error of 8.1 nm, while recovering log-normalised irradiance with $R^2=0.987$. Voltage-resolved analysis further reveals that wavelength and irradiance are encoded differently across the nonlinear device response, with distinct bias regions carrying complementary optical information. These results establish nonlinear material and interface dynamics as a computational resource for spectroscopy and point towards hardware-algorithm co-design in which materials, interfaces and inference architectures are engineered jointly to maximise information content, enabling compact spectroscopic systems without dispersive optics or detector arrays.

physics.optics

Anomalous Non-Hydrogenic Exciton Series in 2D Materials on High-$κ$ Dielectric Substrates

Engineering of the dielectric environment represents a powerful strategy to control the electronic and optical properties of two-dimensional (2D) materials without compromising their structural integrity. Here we show that the recent development of high-$κ$ 2D materials present new opportunities for dielectric engineering. By solving a 2D Mott-Wannier exciton model for WSe$_2$ on different substrates using a screened electron-hole interaction obtained from first principles, we demonstrate that the exciton Rydberg series changes qualitatively when the dielectric screening within the 2D semiconductor becomes dominated by the substrate. In this regime, the distance dependence of the screening is reversed and the effective screening increases with exciton radius, which is opposite to the conventional 2D screening regime. Consequently, higher excitonic states become underbound rather than overbound as compared to the Hydrogenic Rydberg series. Finally, we derive a general analytical expression for the exciton binding energy of the entire 2D Rydberg series

cond-mat.mtrl-sci

Scalable heterostructures produced through mechanical abrasion of van der Waals powders

To fully exploit van der Waals materials and heterostructures, new mass-scalable production routes that are low cost but preserve the high electronic and optical quality of the single crystals are required. Here, we demonstrate an approach to realize a variety of functional heterostructures based on van der Waals nanocrystal films produced through the mechanical abrasion of bulk powders. Significant performance improvements are realized in our devices compared to those fabricated through ink-jet printing of nanocrystal dispersions. To highlight the simplicity and scalability of the technology a multitude of different functional heterostructure devices such as resistors, capacitors, photovoltaics as well as energy devices such as large-area catalyst coatings for hydrogen evolution reaction and multilayer heterostructures for triboelectric nanogenerators are shown. The simplicity of the device fabrication, scalability, and compatibility with flexible substrates makes this a promising technological route for up-scalable van der Waals heterostructures.

physics.app-ph

Electrically tuneable exciton energy exchange between spatially separated 2-dimensional semiconductors in a microcavity

Electrical control over the energy exchange between exciton states mediated by cavity-polaritons at room temperature is demonstrated. Spatially separated field effect transistors based on monolayers of WS$_2$ and MoS$_2$ are placed in a tuneable Fabry-Pérot microcavity. This device is specially designed for the formation of exciton-polaritons that combine the two exciton species and a tuneable cavity mode. It is further shown that the tuning of the free carrier density in the WS$_2$ film leads to a strong modulation of the Rabi splitting that modifies the excitonic and photonic nature of exciton-polaritons. Electrical control of polaritonic devices may lead to technological applications using switchable quantum states.

cond-mat.mes-hall

Electrically tuneable exciton-polaritons through free electron doping in monolayer WS$_2$ microcavities

We demonstrate control over light-matter coupling at room temperature combining a field effect transistor (FET) with a tuneable optical microcavity. Our microcavity FET comprises a monolayer tungsten disulfide WS$_2$ semiconductor which was transferred onto a hexagonal boron nitride flake that acts as a dielectric spacer in the microcavity, and as an electric insulator in the FET. In our tuneable system, strong coupling between excitons in the monolayer WS$_2$ and cavity photons can be tuned by controlling the cavity length, which we achieved with excellent stability, allowing us to choose from the second to the fifth order of the cavity modes. Once we achieve the strong coupling regime, we then modify the oscillator strength of excitons in the semiconductor material by modifying the free electron carrier density in the conduction band of the WS$_2$. This enables strong Coulomb repulsion between free electrons, which reduces the oscillator strength of excitons until the Rabi splitting completely disappears. We controlled the charge carrier density from 0 up to 3.2 $\times$ 10$^{12}$ cm$^{-2}$, and over this range the Rabi splitting varies from a maximum value that depends on the cavity mode chosen, down to zero, so the system spans the strong to weak coupling regimes.

cond-mat.mes-hall

Strain-engineering of twist-angle in graphene/hBN superlattice devices

The observation of novel physical phenomena such as Hofstadter's butterfly, topological currents and unconventional superconductivity in graphene have been enabled by the replacement of SiO$_2$ with hexagonal Boron Nitride (hBN) as a substrate and by the ability to form superlattices in graphene/hBN heterostructures. These devices are commonly made by etching the graphene into a Hall-bar shape with metal contacts. The deposition of metal electrodes, the design and specific configuration of contacts can have profound effects on the electronic properties of the devices possibly even affecting the alignment of graphene/hBN superlattices. In this work we probe the strain configuration of graphene on hBN contacted with two types of metal contacts, two-dimensional (2D) top-contacts and one-dimensional (1D) edge-contacts. We show that top-contacts induce strain in the graphene layer along two opposing leads, leading to a complex strain pattern across the device channel. Edge-contacts, on the contrary, do not show such strain pattern. A finite-elements modelling simulation is used to confirm that the observed strain pattern is generated by the mechanical action of the metal contacts clamped to the graphene. Thermal annealing is shown to reduce the overall doping whilst increasing the overall strain, indicating and increased interaction between graphene and hBN. Surprisingly, we find that the two contacts configurations lead to different twist-angles in graphene/hBN superlattices, which converge to the same value after thermal annealing. This observation confirms the self-locking mechanism of graphene/hBN superlattices also in the presence of strain gradients. Our experiments may have profound implications in the development of future electronic devices based on heterostructures and provide a new mechanism to induce complex strain patterns in 2D materials.

cond-mat.mes-hall

Graphene-based light sensing: fabrication, characterisation, physical properties and performance

Graphene and graphene-based materials exhibit exceptional optical and electrical properties with great promise for novel applications in light detection. However, several challenges prevent the full exploitation of these properties in commercial devices. Such challenges include the limited linear dynamic range (LDR) of graphene-based photodetectors, the lack of efficient generation and extraction of photoexcited charges, the smearing of photoactive junctions due to hot-carriers effects, large-scale fabrication and ultimately the environmental stability of the constituent materials. In order to overcome the aforementioned limits, different approaches to tune the properties of graphene have been explored. A new class of graphene-based devices has emerged where chemical functionalisation, hybridisation with light-sensitising materials and the formation of heterostructures with other 2D materials have led to improved performance, stability or versatility. For example, intercalation of graphene with FeCl$_3$ is highly stable in ambient conditions and can be used to define photo-active junctions characterized by an unprecedented LDR while graphene oxide (GO) is a very scalable and versatile material which supports the photodetection from UV to THz frequencies. Nanoparticles and quantum dots have been used to enhance the absorption of pristine graphene and to enable high gain thanks to the photogating effect. In the same way, hybrid detectors made from stacked sequences of graphene and layered transition-metal dichalcogenides enabled a class of detectors with high gain and responsivity. In this work we will review the performance and advances in functionalised graphene and hybrid photodetectors, with particular focus on the physical mechanisms governing the photoresponse in these materials, their performance and possible future paths of investigation.

cond-mat.mtrl-sci

Sub 20 meV Schottky barriers in metal/MoTe2 junctions

The newly emerging class of atomically-thin materials has shown a high potential for the realisation of novel electronic and optoelectronic components. Amongst this family, semiconducting transition metal dichalcogenides (TMDCs) are of particular interest. While their band gaps are compatible with those of conventional solid state devices, they present a wide range of exciting new properties that is bound to become a crucial ingredient in the future of electronics. To utilise these properties for the prospect of electronics in general, and long-wavelength-based photodetectors in particular, the Schottky barriers formed upon contact with a metal and the contact resistance that arises at these interfaces have to be measured and controlled. We present experimental evidence for the formation of Schottky barriers as low as 10 meV between MoTe2 and metal electrodes. By varying the electrode work functions, we demonstrate that Fermi level pinning due to metal induced gap states at the interfaces occurs at 0.14 eV above the valence band maximum. In this configuration, thermionic emission is observed for the first time at temperatures between 40 K and 75 K. Finally, we discuss the ability to tune the barrier height using a gate electrode.

cond-mat.mes-hall

Novel circuit design for high-impedance and non-local electrical measurements of two-dimensional materials

Two-dimensional materials offer a novel platform for the development of future quantum technologies. However, the electrical characterisation of topological insulating states, non-local resistance and bandgap tuning in atomically-thin materials, can be strongly affected by spurious signals arising from the measuring electronics. Common-mode voltages, dielectric leakage in the coaxial cables and the limited input impedance of alternate-current amplifiers can mask the true nature of such high-impedance states. Here, we present an optical isolator circuit which grants access to such states by electrically decoupling the current-injection from the voltage-sensing circuitry. We benchmark our apparatus against two state-of-the-art measurements: the non-local resistance of a graphene Hall bar and the transfer characteristic of a WS2 field-effect transistor. Our system allows the quick characterisation of novel insulating states in two-dimensional materials with potential applications in future quantum technologies.

physics.ins-det

Strain-engineered inverse charge-funnelling in layered semiconductors

The control of charges in a circuit due to an external electric field is ubiquitous to the exchange, storage and manipulation of information in a wide range of applications, from electronic circuits to synapses in neural cells. Conversely, the ability to grow clean interfaces between materials has been a stepping stone for engineering built-in electric fields largely exploited in modern photovoltaics and opto-electronics. The emergence of atomically thin semiconductors is now enabling new ways to attain electric fields and unveil novel charge transport mechanisms. Here, we report the first direct electrical observation of the inverse charge-funnel effect enabled by deterministic and spatially resolved strain-induced electric fields in a thin sheet of HfS2. We demonstrate that charges driven by these spatially varying electric fields in the channel of a phototransistor lead to a 350% enhancement in the responsivity. These findings could enable the informed design of highly efficient photovoltaic cells.

physics.app-ph

Highly efficient rubrene-graphene charge transfer interfaces as phototransistors in the visible regime

Atomically thin materials such as graphene are uniquely responsive to charge transfer from adjacent materials, making them ideal charge transport layers in phototransistor devices. Effective implementation of organic semiconductors as a photoactive layer would open up a multitude of applications in biomimetic circuitry and ultra-broadband imaging but polycrystalline and amorphous thin films have shown inferior performance compared to inorganic semiconductors. Here, we utilize the long-range order in rubrene single crystals to engineer organic semiconductor-graphene phototransistors surpassing previously reported photo-gating efficiencies by one order of magnitude. Phototransistors based upon these interfaces are spectrally selective to visible wavelengths and, through photoconductive gain mechanisms, achieve responsivity as large as 10^7 A/W and a detectivity of 1.5 10^9 Jones at room temperature. These findings point towards implementing low-cost, flexible materials for amplified imaging at ultra-low light levels.

physics.app-ph

High-Mobility and High-Optical Quality Atomically Thin WS2

The rise of atomically thin materials has the potential to enable a paradigm shift in modern technologies by introducing multi-functional materials in the semiconductor industry. To date the growth of high quality atomically thin semiconductors (e.g. WS2) is one of the most pressing challenges to unleash the potential of these materials and the growth of mono- or bi-layers with high crystal quality is yet to see its full realization. Here, we show that the novel use of molecular precursors in the controlled synthesis of mono- and bi-layer WS2 leads to superior material quality compared to the widely used topotactic transformation of WO3-based precursors. Record high room temperature charge carrier mobility up to 52 cm2/Vs and ultra-sharp photoluminescence linewidth of just 36 meV over submillimeter areas demonstrate that the quality of this material supersedes also that of naturally occurring materials. By exploiting surface diffusion kinetics of W and S species adsorbed onto a substrate, a deterministic layer thickness control has also been achieved promoting the design of scalable synthesis routes.

cond-mat.mtrl-sci

Extraordinary linear dynamic range in laser-defined functionalized graphene photodetectors

Graphene-based photodetectors have demonstrated mechanical flexibility, large operating bandwidth, and broadband spectral response. However, their linear dynamic range (LDR) is limited by graphene's intrinsichot-carrier dynamics, which causes deviation from a linear photoresponse at low incident powers. At the same time, multiplication of hot carriers causes the photoactive region to be smeared over distances of a few micro-meters, limiting the use of graphene in high-resolution applications. We present a novel method for engineer-ing photoactive junctions in FeCl3-intercalated graphene using laser irradiation. Photocurrent measured at these planar junctions shows an extraordinary linear response with an LDR value at least 4500 times larger than that of other graphene devices (44 dB) while maintaining high stability against environmental contamination without the need for encapsulation. The observed photoresponse is purely photovoltaic, demonstrating complete quenching of hot-carrier effects. These results pave the way toward the design of ultrathin photode-tectors with unprecedented LDR for high-definition imaging and sensing.

cond-mat.mes-hall

Fast and Highly Sensitive Ionic Polymer Gated WS$_2$-Graphene Photodetectors

The combination of graphene with semiconductor materials in heterostructure photodetectors, has enabled amplified detection of femtowatt light signals using micron-scale electronic devices. Presently, the speed of such detectors is limited by long-lived charge traps and impractical strategies, e.g. the use of large gate voltage pulses, have been employed to achieve bandwidths suitable for applications, such as video-frame-rate imaging. Here, we report atomically thin graphene-WS$_2$ heterostructure photodetectors encapsulated in an ionic polymer, which are uniquely able to operate at bandwidths up to 1.5 kHz, whilst maintaining internal gain as large as $10^6$. Highly mobile ions and a nanometre scale Debye length of the ionic polymer are used to screen charge traps and tune the Fermi level of graphene over an unprecedented range at the interface with WS$_2$. We observe a responsivity $R=10^6$ A W$^{-1}$ and detectivity $D^*=3.8\times10^{11}$ Jones, approaching that of single photon counters. The combination of both high responsivity and fast response times makes these photodetectors suitable for video-frame-rate imaging applications.

cond-mat.mes-hall

An integrated and multi-purpose microscope for the characterization of atomically thin optoelectronic devices

Optoelectronic devices based on graphene and other two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs) are the focus of wide research interest. The characterization these emerging atomically thin materials and devices strongly relies on a set of measurements involving both optical and electronic instrumentation ranging from scanning photocurrent mapping to Raman and photoluminescence (PL) spectroscopy. Furthermore, proof-of-concept devices are usually fabricated from micro-meter size flakes, requiring microscopy techniques to characterize them. Current state-of-the-art commercial instruments offer the ability to characterize individual properties of these materials with no option for the in situ characterization of a wide enough range of complementary optical and electrical properties. Presently, the requirement to switch atomically-thin materials from one system to another often radically affects the properties of these uniquely sensitive materials through atmospheric contamination. Here, we present an integrated, multi-purpose instrument dedicated to the optical and electrical characterization of devices based on 2D materials which is able to perform low frequency electrical measurements, scanning photocurrent mapping, Raman, absorption and PL spectroscopy in one single set-up. We characterize this apparatus by performing multiple measurements on graphene, transition metal dichalcogenides (TMDs) and Si. The performance and resolution of each individual measurement technique is found to be equivalent to that of commercially available instruments. Contrary to nowadays commercial systems, a significant advantage of the developed instrument is that for the first time the integration of a wide range of complementary opto-electronic and spectroscopy characterization techniques is demonstrated in a single compact unit.

physics.ins-det

Role of Charge Traps in the Performance of Atomically-Thin Transistors

Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders a time-dependent change in threshold voltage the dominant effect on the channel hysteretic behavior over emission currents from the charge traps. The proposed model is expected to be instrumental in understanding the fundamental physics that governs the performance of atomically thin FETs and is applicable to the entire class of atomically thin-based devices. Hence, the model is vital to the intelligent design of fast and highly efficient opto-electronic devices.

cond-mat.mes-hall

Homogeneously bright, flexible and foldable lighting devices with functionalised graphene electrodes

Alternating current electroluminescent technology allows the fabrication of large area, flat and flexible lights. Presently the maximum size of a continuous panel is limited by the high resistivity of available transparent electrode materials causing a visible gradient of brightness. Here, we demonstrate that the use of the best known transparent conductor FeCl$_{3}$-intercalated few-layer graphene boosts the brightness of electroluminescent devices by 49$\%$ compared to pristine graphene. Intensity gradients observed for high aspect ratio devices are undetectable when using these highly conductive electrodes. Flat lights on polymer substrates are found to be resilient to repeated and flexural strains.

cond-mat.mtrl-sci

Critical current scaling in long diffusive graphene-based Josephson junctions

We present transport measurements on long diffusive graphene-based Josephson junctions. Several junctions are made on a single-domain crystal of CVD graphene and feature the same contact width of ~9$μ$m but vary in length from 400 to 1000 nm. As the carrier density is tuned with the gate voltage, the critical current in the these junctions spans a range from a few nA up to more than $5μ$A, while the Thouless energy, ETh, covers almost two orders of magnitude. Over much of this range, the product of the critical current and the normal resistance IcRn is found to scale linearly with ETh, as expected from theory. However, the ratio IcRn /ETh is found to be 0.1-0.2: much smaller than the predicted ~10 for long diffusive SNS junctions.

cond-mat.mes-hall