arXiv subjects

Sayani Pal

Publications and source records attributed to Sayani Pal.

6 recordsLinked to original sources

arXiv2026

Superconducting cavity probes sliding ferroelectricity in small-angle twisted WSe$_2$

Ferroelectricity is a property of materials that exhibit spontaneous charge polarization. Ferroelectricity in 2D materials is interesting because of their applications in memory devices and field-effect transistors. Recently, a new type of ferroelectricity, known as sliding ferroelectricity, has been discovered, in which parallel-stacked bilayers of hexagonal boron nitride (hBN) or transition metal dichalcogenides (TMDCs) develop an out-of-plane electric polarization. In this work, we probe the polarization of small-angle parallel stacked WSe$_2$ by measuring its high-frequency AC response, achieved by embedding it into a half-wave superconducting coplanar waveguide cavity. We observe a hysteretic response in the capacitance of the stack and quality factor of the cavity, confirming ferroelectric switching in the system. Our results further reveal relaxation effects associated with ferroelectric domain-wall motion. This cavity-based technique has potential applications in probing domain-wall dynamics in a ferroelectric system at high frequencies.

cond-mat.mes-hall↗

arXiv2024

Anisotropic magneto-photothermal voltage in Sb2Te3 topological insulator thin films

We studied longitudinal and Hall photothermal voltages under a planar magnetic field scan in epitaxial thin films of the Topological Insulator (TI) Sb2Te3, grown using pulsed laser deposition (PLD). Unlike prior research that utilised polarised light-induced photocurrent to investigate the TI, our study introduces advancements based on unpolarized light-induced local heating. This method yields a thermoelectric response exhibiting a direct signature of strong spin-orbit coupling. Our analysis reveals three distinct contributions when fitting the photothermal voltage data to the angular dependence of the planar magnetic field. The interaction between the applied magnetic field and the thermal gradient on the bulk band orbitals enables the differentiation between the ordinary Nernst effect from the out-of-plane thermal gradient and an extraordinary magneto-thermal contribution from the planar thermal gradient. The fitting of our data to theoretical models indicates that these effects primarily arise from the bulk states of the TI rather than the surface states. These findings highlight PLD-grown epitaxial topological insulator thin films as promising candidates for optoelectronic devices, including sensors and actuators. Such devices offer controllable responses through position-dependent, non-invasive local heating via focused incident light and variations in the applied magnetic field direction.

cond-mat.mes-hall↗

arXiv2023

Enhancement of spin to charge conversion efficiency at the topological surface state by inserting normal metal spacer layer in the topological insulator based heterostructure

We report efficient spin to charge conversion (SCC) in the topological insulator (TI) based heterostructure ($BiSbTe_{1.5}Se_{1.5}/Cu/Ni_{80}Fe_{20}$) by using spin-pumping technique where $BiSbTe_{1.5}Se_{1.5}$ is the TI and $Ni_{80}Fe_{20}$ is the ferromagnetic layer. The SCC, characterized by inverse Edelstein effect length ($\lambda_{IEE}$) in the TI material gets altered with an intervening Copper (Cu) layer and it depends on the interlayer thickness. The introduction of Cu layer at the interface of TI and ferromagnetic metal (FM) provides a new degree of freedom for tuning the SCC efficiency of the topological surface states. The significant enhancement of the measured spin-pumping voltage and the linewidth of ferromagnetic resonance (FMR) absorption spectra due to the insertion of Cu layer at the interface indicates a reduction in spin memory loss at the interface that resulted from the presence of exchange coupling between the surface states of TI and the local moments of ferromagnetic metal. The temperature dependence (from 8K to 300K) of the evaluated $\lambda_{IEE}$ data for all the trilayer systems, TI/Cu/FM with different Cu thickness confirms the effect of exchange coupling between the TI and FM layer on the spin to charge conversion efficiency of the topological surface state.

cond-mat.mes-hall↗

arXiv2023

Modulating Spin Current Induced Effective Damping in $\beta-W/Py$ Heterostructures by a Systematic Variation in Resistivity of the Sputtered Deposited $\beta-W$ films

Utilizing the spin-induced pumping from a ferromagnet (FM) into a heavy metal (HM) under the ferromagnetic resonance (FMR) condition, we report an enhancement in effective damping in $\beta$- W/Py bilayers by systematically varying resistivity ($\rho_{W}$) of $\beta$-W films. Different resistivity ranging from 100 $\mu\Omega$-cm to 1400 $\mu\Omega$-cm with a thickness of 8 nm can be achieved by varying the argon pressure ($P_{Ar}$) during the growth by the method of sputtering. The coefficient of effective damping $\alpha_{eff}$ is observed to increase from 0.010 to 0.025 with $\rho_{W}$, which can be modulated by $P_{Ar}$. We observe a modest dependence of $\alpha_{eff}$ on the sputtering power ($p_{S}$) while keeping the $P_{Ar}$ constant. $\alpha_{eff}$ dependence on both $P_{Ar}$ and $p_{S}$ suggests that there exists a strong correlation between $\alpha_{eff}$ and $\rho_{W}$. It is thus possible to utilize $\rho_{W}$ as a tuning parameter to regulate the $\alpha_{eff}$, which can be advantageous for faster magnetization dynamics switching. The thickness dependence study of Py in the aforementioned bilayers manifests a higher spin mixing conductance ($g^{\uparrow\downarrow}_{eff}$) which suggests a strong spin pumping from Py into the $\beta$-W layer. The effective spin current ($J_{S(eff)}$) is also evaluated by considering the spin-back flow in this process. Intrinsic spin mixing conductance ($g^{\uparrow\downarrow}_{W}$) and spin diffusion length ($\lambda_{SD}$) of $\beta$-W are additionally investigated using thickness variations in $\beta$-W. Furthermore, the low-temperature study in $\beta$-W/Py reveals an intriguing temperature dependence in $\alpha_{eff}$ which is quite different from $\alpha_{b}$ of single Py layer and the enhancement in $\alpha_{eff}$ at low temperature can be attributed to the spin-induced pumping from Py layer into $\beta$-W.

cond-mat.mes-hall↗

arXiv2023

Experimental investigation of the effect of topological insulator on the magnetization dynamics of ferromagnetic metal: $BiSbTe_{1.5}Se_{1.5}$ and $Ni_{80}Fe_{20}$ heterostructure

We have studied ferromagnetic metal/topological insulator bilayer system to understand magnetization dynamics of ferromagnetic metal (FM) in contact with a topological insulator (TI). At magnetic resonance condition, the precessing magnetization in the metallic ferromagnet ($Ni_{80}Fe_{20}$) injects spin current into the topological insulator ($BiSbTe_{1.5}Se_{1.5}$), a phenomenon known as spin-pumping. Due to the spin pumping effect, fast relaxation in the ferromagnet results in the broadening of ferromagnetic resonance linewidth ($\Delta H$). We evaluated the parameters like effective Gilbert damping coefficient ($\alpha_{eff}$), spin-mixing conductance ($g_{eff}^{\uparrow \downarrow}$) and spin current density ($j_S^0$) to confirm a successful spin injection due to spin-pumping into the $BiSbTe_{1.5}Se_{1.5}$ layer. TIs embody a spin-momentum locked surface state that span the bulk band-gap. It can act differently to the FM magnetization than the other normal metals. To probe the effect of topological surface state, a systematic low temperature study is crucial as surface state of TI dominates at lower temperatures. The exponential growth of $\Delta H$ for all different thickness combination of FM/TI bilayers and effective Gilbert damping coefficient ($\alpha_{eff}$) with lowering temperature confirms the prediction that spin chemical bias generated from spin-pumping induces surface current in TI due to spin-momentum locking. The hump-like feature of magnetic anisotropy field ($H_K$)of the bilayer around 60K suggests that the decrease of interfacial in-plane magnetic anisotropy can result from exchange coupling between the TI surface state and the local moments of FM layer.

cond-mat.mes-hall↗

arXiv2022

A short-circuited coplanar waveguide for low-temperature single-port ferromagnetic resonance spectroscopy set-up to probe the magnetic properties of ferromagnetic thin films

A coplanar waveguide shorted in one end is proposed, designed, and implemented successfully to measure the properties of magnetic thin films as a part of the vector network analyzer ferromagnetic resonance (VNA-FMR) spectroscopy set-up. Its simple structure, potential applications and easy installation inside the cryostat chamber made it advantageous especially for low-temperature measurements. It provides a wide band of frequencies in the gigahertz range essential for FMR measurements. Our spectroscopy set-up with short-circuited coplanar waveguide has been used to extract Gilbert damping coefficient and effective magnetization values for standard ferromagnetic thin films like Py and Co. The thickness and temperature dependent studies of those magnetic parameters have also been done here for the afore mentioned magnetic samples.

cond-mat.mtrl-sci↗