arXiv subjects

Scott A. Crooker

Publications and source records attributed to Scott A. Crooker.

At least 19 recordsLinked to original sources

arXiv2026

Bulk and surface excitons in the van der Waals magnet CrSBr: Magneto-optical studies to 55 tesla

In thin layers of the 2D magnetic semiconductor CrSBr, very recent studies identified two distinct band-edge optical resonances, believed to arise from distinguishable bulk and surface excitons. This behavior reportedly originates from the highly anisotropic nature of CrSBr -- particularly in its antiferromagnetic state -- where excitons are effectively confined within individual monolayers, such that excitons in the two surface layers "see" a different local dielectric environment and have a lower resonance energy. To explore this scenario, here we investigate optical absorption properties of few-layer CrSBr in magnetic fields. In addition to the fundamental exciton resonance at ~1.36eV, we observe an absorption resonance ~20 meV lower in energy. Compared to the fundamental transition, this resonance redshifts only half as much in small magnetic fields that induce ferromagnetic order, while in high fields to 55T it exhibits a smaller diamagnetic shift. Both behaviors point to distinguishable populations of bulk and surface excitons in CrSBr.

cond-mat.mes-hall↗

arXiv2026

Layer-dependent Landé $g$-factors of electrons, holes, and excitons in two-dimensional Ruddlesden-Popper lead halide perovskites

Two-dimensional Ruddlesden-Popper lead halide perovskites provide a valuable platform for tailoring charge and spin properties through quantum confinement and reduced symmetry. While the electron and hole Landé $g$-factors in bulk lead halide perovskites exhibit a universal dependence on the band gap energy, their evolution in two-dimensional perovskites has remained largely unexplored. Here, the Zeeman splittings of electrons and holes in (PEA)$_2$MA$_{n-1}$Pb$_n$I$_{3n+1}$ perovskites with the number of inorganic layers ovarying in the range $n=1,...,8$ are measured by means of the spin-flip Raman scattering and time-resolved Kerr rotation magneto-optical techniques. A systematic evolution of the electron and hole $g$-factors with decreasing layer thickness, which deviates from the universal bulk behavior and reveals confinement-driven trends similar to those observed in perovskite nanocrystals, is found. The experimental results are in good qualitative agreement with empirical tight-binding calculations. The exciton $g$-factors are evaluated from the Zeeman splittings of the exciton resonances in reflectivity measured in pulsed magnetic fields up to 55~T. These results provide comprehensive insight into the spin properties of two-dimensional lead halide perovskites and establish them as a tunable platform for engineering spin-dependent phenomena in quantum-confined semiconductors.

cond-mat.other↗

arXiv2025

Tunable chiral and nematic states in the triple-Q antiferromagnet Co$_{1/3}$TaS$_2$

Complex spin configurations in magnetic materials, ranging from collinear single-Q to noncoplanar multi-Q states, exhibit rich symmetry and chiral properties. However, their detailed characterization is often hindered by the limited spatial resolution of neutron diffraction techniques. Here we employ magnetic circular dichroism (MCD) and magnetic linear dichroism (MLD) to investigate the triangular lattice antiferromagnet Co$_{1/3}$TaS$_2$, revealing three-state (Z3) nematicity and also spin chirality across its multi-Q magnetic phases. At intermediate temperatures, the presence of MLD identifies nematicity arising from a single-Q stripe phase, while at high magnetic fields and low temperatures, a phase characterized solely by MCD emerges, signifying a purely chiral non-coplanar triple-Q state. Notably, at low temperatures and small fields, we discover a unique phase where both chirality and nematicity coexist. A theoretical analysis based on a continuous multi-Q manifold captures the emergence of these distinct magnetic phases, as a result of the interplay between four-spin interactions and weak magnetic anisotropy. Additionally, MCD and MLD microscopy spatially resolves the chiral and nematic domains. Our findings establish Co$_{1/3}$TaS$_2$ as a rare platform hosting diverse multi-Q states with distinct combinations of spin chirality and nematicity while demonstrating the effectiveness of polarized optical techniques in characterizing complex magnetic textures.

cond-mat.str-el↗

arXiv2025

Energy shifts and broadening of excitonic resonances in electrostatically-doped semiconductors

Tuning the density of resident electrons or holes in semiconductors provides crucial insight into the composition of excitonic complexes that are observed as absorption or photoluminescence resonances in optical studies. Moreover, we can change the way these resonances shift and broaden in energy by controlling the quantum numbers of the resident carriers with magnetic fields and doping levels, and by selecting the quantum numbers of the photoexcited or recombining electron-hole (e-h) pair through optical polarization. We discuss the roles of distinguishability and optimality of excitonic complexes, showing them to be key ingredients that determine the energy shifts and broadening of optical resonances in charge-tunable semiconductors. A distinguishable e-h pair means that the electron and hole undergoing photoexcitation or recombination have quantum numbers that are not shared by any of the resident carriers. An optimal excitonic complex refers to a complex whose particles come with all available quantum numbers of the resident carriers. All optical resonances may be classified as either distinct or indistinct depending on the distinguishability of the e-h pair, and the underlying excitonic complex can be classified as either optimal or suboptimal. The universality of these classifications, inherited from the fundamental Pauli exclusion principle, allows us to understand how optical resonances shift in energy and whether they should broaden as doping is increased. This understanding is supported by conclusive evidence that the decay of optical resonances cannot be simply attributed to enhanced screening when resident carriers are added to a semiconductor. Finally, applying the classification scheme in either monolayer or moire heterobilayer systems, we relate the energy shift and amplitude of the neutral exciton resonance to the compressibility of the resident carrier gas.

cond-mat.mtrl-sci↗

arXiv2025

Quantum oscillations of holes in GaN

GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radio-frequency and power electronics. Suffering from inefficient hole doping and low hole mobility, quantum oscillations in p-type GaN have not been observed, hindering fundamental studies of valence bands and hole transport in GaN. Here, we present the first observation of quantum oscillations of holes in GaN. Shubnikov-de Haas (SdH) oscillations in hole resistivity are observed in a quantum-confined two-dimensional hole gas at a GaN/AlN interface, where polarization-induced doping overcomes thermal freeze-out, and a sharp and clean interface boosts the hole mobility enough to unmask the quantum oscillations. These holes degenerately occupy the light and heavy hole bands of GaN and have record-high mobilities of ~1900 cm2/Vs and ~400 cm2/Vs at 3K, respectively. We use magnetic fields up to 72 T to resolve SdH oscillations of holes from both valence bands to extract their respective sheet densities, quantum scattering times, and the effective masses of light holes (0.5-0.7 m0) and heavy holes (1.9 m0). SdH oscillations of heavy and light holes in GaN constitute a direct metrology of valence bands and open new venues for quantum engineering in this technologically important semiconductor. Like strained silicon transistors, strain-engineering of the valence bands of GaN is predicted to dramatically improve hole mobilities by reducing the hole effective mass, a proposal that can now be explored experimentally, particularly in a fully fabricated transistor, using quantum oscillations. Furthermore, the findings of this work suggest a blueprint to create 2D hole gases and observe quantum oscillations of holes in related wide bandgap semiconductors such as SiC and ZnO in which such techniques are not yet possible.

cond-mat.mes-hall↗

arXiv2023

Exciton-polaritons in CsPbBr$_3$ crystals revealed by optical reflectivity in high magnetic fields and two-photon spectroscopy

Cesium lead bromide (CsPbBr$_3$) is a representative material of the emerging class of lead halide perovskite semiconductors that possess remarkable optoelectronic properties. Its optical properties in the vicinity of the band gap energy are greatly contributed by excitons, which form exciton-polaritons due to strong light-matter interactions. We examine exciton-polaritons in solution-grown CsPbBr$_3$ crystals by means of circularly-polarized reflection spectroscopy measured in high magnetic fields up to 60 T. The excited 2P exciton state is measured by two-photon absorption. Comprehensive modeling and analysis provides detailed quantitative information about the exciton-polariton parameters: exciton binding energy of 32.5 meV, oscillator strength characterized by longitudinal-tranverse splitting of 5.3 meV, damping of 6.7 meV, reduced exciton mass of $0.18 m_0$, exciton diamagnetic shift of 1.6 $μ$eV/T$^2$, and exciton Landé factor $g_X=+2.35$. We show that the exciton states can be well described within a hydrogen-like model with an effective dielectric constant of 8.7. From the measured exciton longitudinal-transverse splitting we evaluate the Kane energy of $E_p=15$ eV, which is in reasonable agreement with values of $11.8-12.5$ eV derived from the carrier effective masses.

cond-mat.mes-hall↗

arXiv2023

Topological Surface Magnetism and Neel Vector Control in a Magnetoelectric Antiferromagnet

Antiferromagnetic states with no stray magnetic fields can enable high-density ultra-fast spintronic technologies. However, the detection and control of antiferromagnetic Neel vectors remain challenging. Linear magnetoelectric antiferromagnets (LMAs) may provide new pathways, but applying simultaneous electric and magnetic fields, necessary to control Neel vectors in LMAs, is cumbersome and impractical for most applications. Herein, we show that Cr2O3, a prototypical room-temperature LMA, carries a topologically-protected surface magnetism in all surfaces, which stems from intrinsic surface electric fields due to band bending, combined with the bulk linear magnetoelectricity. Consequently, bulk Neel vectors with zero bulk magnetization can be simply tuned by magnetic fields through controlling the magnetizations associated with the surface magnetism. Our results imply that the surface magnetizations discovered in Cr2O3 should be also present in all LMAs.

cond-mat.mtrl-sci↗

arXiv2023

Proximity-enhanced valley Zeeman splitting at the WS$_2$/graphene interface

The valley Zeeman physics of excitons in monolayer transition metal dichalcogenides provides valuable insight into the spin and orbital degrees of freedom inherent to these materials. Being atomically-thin materials, these degrees of freedom can be influenced by the presence of adjacent layers, due to proximity interactions that arise from wave function overlap across the 2D interface. Here, we report 60 T magnetoreflection spectroscopy of the A- and B- excitons in monolayer WS$_2$, systematically encapsulated in monolayer graphene. While the observed variations of the valley Zeeman effect for the A- exciton are qualitatively in accord with expectations from the bandgap reduction and modification of the exciton binding energy due to the graphene-induced dielectric screening, the valley Zeeman effect for the B- exciton behaves markedly different. We investigate prototypical WS$_2$/graphene stacks employing first-principles calculations and find that the lower conduction band of WS$_2$ at the $K/K'$ valleys (the $CB^-$ band) is strongly influenced by the graphene layer on the orbital level. This leads to variations in the valley Zeeman physics of the B- exciton, consistent with the experimental observations. Our detailed microscopic analysis reveals that the conduction band at the $Q$ point of WS$_2$ mediates the coupling between $CB^-$ and graphene due to resonant energy conditions and strong coupling to the Dirac cone. Our results therefore expand the consequences of proximity effects in multilayer semiconductor stacks, showing that wave function hybridization can be a multi-step process with different bands mediating the interlayer interactions. Such effects can be exploited to resonantly engineer the spin-valley degrees of freedom in van der Waals and moiré heterostructures.

cond-mat.mes-hall↗

arXiv2022

Asymmetric magnetic proximity interactions in MoSe$_{2}$/CrBr$_{3}$ van der Waals heterostructures

Magnetic proximity interactions (MPIs) between atomically-thin semiconductors and two-dimensional magnets provide a means to manipulate spin and valley degrees of freedom in nonmagnetic monolayers, without the use of applied magnetic fields. In such van der Waals (vdW) heterostructures, MPIs originate in the nanometer-scale coupling between the spin-dependent electronic wavefunctions in the two materials, and typically their overall effect is regarded as an effective magnetic field acting on the semiconductor monolayer. Here we demonstrate that this picture, while appealing, is incomplete: The effects of MPIs in vdW heterostructures can be markedly asymmetric, in contrast to that from an applied magnetic field. Valley-resolved optical reflection spectroscopy of MoSe$_{2}$/CrBr$_{3}$ vdW structures reveals strikingly different energy shifts in the $K$ and $K'$ valleys of the MoSe$_2$, due to ferromagnetism in the CrBr$_3$ layer. Strong asymmetry is observed at both the A- and B-exciton resonances. Density-functional calculations indicate that valley-asymmetric MPIs depend sensitively on the spin-dependent hybridization of overlapping bands, and as such are likely a general feature of such hybrid vdW structures. These studies suggest routes to selectively control \textit{specific} spin and valley states in monolayer semiconductors.

cond-mat.mes-hall↗

arXiv2022

Dative epitaxy of commensurate monocrystalline covalent-van der Waals moiré supercrystal

Realizing van der Waals (vdW) epitaxy in the 80s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a spread of misorientation angles are formed, limiting the applicability of vdW epitaxy. Here we report the epitaxial growth of monocrystalline, covalent Cr5Te8 2D crystals on monolayer vdW WSe2 by chemical vapor deposition, driven by interfacial dative bond formation. The lattice of Cr5Te8, with a lateral dimension of a few ten microns, is fully commensurate with that of WSe2 via 3 x 3 (Cr5Te8)-7 x 7 (WSe2) supercell matching, forming a single crystalline moire superlattice. Our work has established a conceptually distinct paradigm of thin film epitaxy termed dative epitaxy, which takes full advantage of covalent epitaxy with chemical bonding for fixing the atomic registry and crystal orientation, while circumventing its stringent lattice matching and processing compatibility requirements; conversely, it ensures the full flexibility of vdW epitaxy, while avoiding its poor orientation control. Cr5Te8 2D crystals grown by dative epitaxy exhibit square magnetic hysteresis, suggesting minimized interfacial defects that can serve as pinning sites.

cond-mat.mtrl-sci↗

arXiv2022

Proximity Induced Chiral Quantum Light Generation in Strain-Engineered WSe2/NiPS3 Heterostructures

Quantum light emitters (QEs) capable of generating single photons of well-defined circular polarization could enable non-reciprocal single photon devices and deterministic spin-photon interfaces critical for realizing complex quantum networks. To date, emission of such chiral quantum light has been achieved via the application of intense external magnetic field electrical/optical injection of spin polarized carriers/excitons, or coupling with complex photonic/meta-structures. Here we report free-space generation of highly chiral single photons from QEs created in monolayer WSe2 - NiPS3 heterostructures at zero external magnetic field. These QEs emit in the 760-800 nm range with a degree of circular polarization and single photon purity as high as 0.71 and 80% respectively, independent of pump laser polarization. QEs are deterministically created by pressing a scanning probe microscope tip into a two-dimensional heterostructure comprising a WSe2 monolayer and a ~50 nm thick layer of the antiferromagnetic (AFM) insulator NiPS3. Temperature dependent magneto-photoluminescence studies indicate that the chiral quantum light emission arises from magnetic proximity interactions between localized excitons in the WSe2 monolayer and the out-of-plane magnetization of AFM defects in NiPS3, both of which are co-localized by the strain field arising from the nanoscale indentations.

cond-mat.mes-hall↗

arXiv2022

Hexcitons and oxcitons in monolayer WSe$_2$

In the archetypal monolayer semiconductor WSe$_2$, the distinct ordering of spin-polarized valleys (low-energy pockets) in the conduction band allows for studies of not only simple neutral excitons and charged excitons (i.e., trions), but also more complex many-body states that are predicted at higher electron densities. We discuss magneto-optical measurements of electron-rich WSe$_2$ monolayers, and interpret the spectral lines that emerge at high electron doping as optical transitions of 6-body exciton states ("hexcitons") and 8-body exciton states ("oxcitons"). These many-body states emerge when a photoexcited electron-hole pair interacts simultaneously with multiple Fermi seas, each having distinguishable spin and valley quantum numbers. In addition, we identify the energies of primary and satellite optical transitions of hexcitons in the photoluminescence spectrum.

cond-mat.mtrl-sci↗

arXiv2022

Optical detection of long electron spin transport lengths in a monolayer semiconductor

Using a spatially-resolved optical pump-probe experiment, we measure the lateral transport of spin/valley polarized electrons over very long distances (tens of micrometers) in a single WSe2 monolayer. By locally pumping the Fermi sea of 2D electrons to a high degree of spin/valley polarization (up to 75%) using circularly-polarized light, the lateral diffusion of the electron polarization can be mapped out via the photoluminescence induced by a spatially-separated and linearly-polarized probe laser. Up to 25% spin-valley polarization is observed at pump-probe separations up to 20 microns. Characteristic spin/valley diffusion lengths of 18 +/- 3 um are revealed at low temperatures. The dependence on temperature, pump helicity, pump intensity, and electron density highlight the key roles played by spin relaxation time and pumping efficiency on polarized electron transport in monolayer semiconductors possessing spin-valley locking.

cond-mat.mes-hall↗

arXiv2022

Many-body exciton and inter-valley correlations in heavily electron-doped WSe$_2$ monolayers

In monolayer transition-metal dichalcogenide semiconductors, many-body correlations can manifest in optical spectra when photoexcited electron-hole pairs (excitons) are introduced into a 2D Fermi sea of mobile carriers. At low carrier densities, the formation of positively and negatively charged excitons ($X^\pm$) is well documented. However, in WSe$_2$ monolayers, an additional absorption resonance, often called $X^{-\prime}$, emerges at high electron density. Its origin is not understood. Here we investigate the $X^{-\prime}$ state via polarized absorption spectroscopy of electrostatically-gated WSe$_2$ monolayers in high magnetic fields to 60~T. Field-induced filling and emptying of the lowest optically-active Landau level in the $K'$ valley causes repeated quenching of the corresponding optical absorption. Surprisingly, however, these quenchings are accompanied by absorption changes to higher-lying Landau levels in both $K'$ and $K$ valleys, which are unoccupied. These results cannot be reconciled within a single-particle picture, and demonstrate the many-body nature and inter-valley correlations of the $X^{-\prime}$ quasiparticle state.

cond-mat.mes-hall↗

arXiv2021

Covalent 2D Cr$_2$Te$_3$ ferromagnet

To broaden the scope of van der Waals 2D magnets, we report the synthesis and magnetism of covalent 2D magnetic Cr$_2$Te$_3$ with a thickness down to one-unit-cell. The 2D Cr$_2$Te$_3$ crystals exhibit robust ferromagnetism with a Curie temperature of 180 K, a large perpendicular anisotropy of 7*105 J m-3, and a high coercivity of ~ 4.6 kG at 20 K. First-principles calculations further show a transition from canted to collinear ferromagnetism, a transition from perpendicular to in-plane anisotropy, and emergent half-metallic behavior in atomically-thin Cr$_2$Te$_3$, suggesting its potential application for injecting carriers with high spin polarization into spintronic devices.

cond-mat.mes-hall↗

arXiv2020

Spontaneous valley polarization of interacting carriers in a monolayer semiconductor

We report magneto-absorption spectroscopy of gated WSe$_2$ monolayers in high magnetic fields up to 60~T. When doped with a 2D Fermi sea of mobile holes, well-resolved sequences of optical transitions are observed in both $σ^\pm$ circular polarizations, which unambiguously and separately indicate the number of filled Landau levels (LLs) in both $K$ and $K'$ valleys. This reveals the interaction-enhanced valley Zeeman energy, which is found to be highly tunable with hole density $p$. We exploit this tunability to align the LLs in $K$ and $K'$, and find that the 2D hole gas becomes unstable against small changes in LL filling and can spontaneously valley-polarize. These results cannot be understood within a single-particle picture, highlighting the importance of exchange interactions in determining the ground state of 2D carriers in monolayer semiconductors.

cond-mat.mes-hall↗

arXiv2018

Spatial extent of the excited exciton states in WS$_2$ monolayers from diamagnetic shifts

We experimentally study the radii of excitons in hBN-encapsulated WS2 monolayers by means of magneto-optical reflectance spectroscopy at cryogenic temperatures in magnetic fields up to 29 T. We observe field-induced energy shifts of the exciton ground and excited states due to valley Zeeman and diamagnetic effects. We find the g factor of the first excited state of $-4.2(+/-0.1) to be essentially equal to that of the ground state of -4.35(+/-0.1). From diamagnetic shifts we determine the root mean square radii of the excitons. The radius of the first excited state is found to be 5-8 nm and that of the ground state around 2 nm. Our results further confirm the Wannier-Mott nature of the exciton quasiparticles in monolayer semiconductors and the assignment of the optical resonances in absorption-type measurements. They also provide additional support for the applicability of the effective mass hydrogenlike models in these systems.

cond-mat.mes-hall↗

arXiv2018

High magnetic fields for fundamental physics

Various fundamental-physics experiments such as measurement of the birefringence of the vacuum, searches for ultralight dark matter (e.g., axions), and precision spectroscopy of complex systems (including exotic atoms containing antimatter constituents) are enabled by high-field magnets. We give an overview of current and future experiments and discuss the state-of-the-art DC- and pulsed-magnet technologies and prospects for future developments.

physics.ins-det↗