arXiv subjects

Scott K. Cushing

Publications and source records attributed to Scott K. Cushing.

36 records · Page 2Linked to original sources

arXiv2023

Antiadiabatic Small Polaron Formation in the Charge Transfer Insulator ErFeO3

Small polaron formation is dominant across a range of condensed matter systems. Small polarons are usually studied in terms of ground-state transport and thermal fluctuations, but small polarons can also be created impulsively by photoexcitation. The temporal response of the lattice and local electron correlations can then be separated, such as with transient XUV spectroscopy. To date, photoexcited small polaron formation has only been measured to be adiabatic. The reorganization energy of the polar lattice is large enough that the first electron-optical phonon scattering event creates a small polaron without significant carrier thermalization. Here, we use transient XUV spectroscopy to measure antiadiabatic polaron formation by frustrating the iron-centered octahedra in a rare-earth orthoferrite lattice. The small polaron is measured to take several picoseconds to form over multiple coherent charge hopping events between neighboring Fe3+-Fe2+ sites, a timescale that is more than an order of magnitude longer compared to previous materials. The measured interplay between optical phonons, electron correlations, and on-site lattice deformation give a clear picture of how antiadiabatic small polaron transport would occur in the material. The measurements also confirm the prediction of the Holstein and Hubbard-Holstein model that the electron hopping integral must be larger than the reorganization energy to achieve antiadiabaticity. Moreover, the measurements emphasize the importance of considering dynamical electron correlations, and not just changes in the lattice geometry, for controlling small polarons in transport or photoexcited applications.

cond-mat.mtrl-sci↗

arXiv2023

Entangled Photon Correlations Allow a Continuous-Wave Laser Diode to Measure Single Photon, Time-Resolved Fluorescence

Fluorescence lifetime experiments are a standard approach for measuring excited state dynamics and local environment effects. Here, we show that entangled photon pairs produced from a continuous-wave (CW) laser diode can replicate pulsed laser experiments without phase modulation. As a proof of principle, picosecond fluorescence lifetimes of indocyanine green are measured in multiple environments. The use of entangled photons has three unique advantages. First, low power CW laser diodes and entangled photon source design lead to straightforward on-chip integration for a direct path to distributable fluorescence lifetime measurements. Second, the entangled pair wavelength is easily tuned by temperature or electric field, allowing a single source to cover octave bandwidths. Third, femtosecond temporal resolutions can be reached without requiring major advances in source technology or external phase modulation. Entangled photons could therefore provide increased accessibility to time-resolved fluorescence while also opening new scientific avenues in photosensitive and inherently quantum systems.

quant-ph↗

arXiv2023

Using Electron Energy-Loss Spectroscopy to Measure Nanoscale Electronic and Vibrational Dynamics in a TEM

Electron energy-loss spectroscopy (EELS) can measure similar information to X-ray, UV-Vis, and IR spectroscopies but with atomic resolution and increased scattering cross sections. Recent advances in electron monochromators have expanded EELS capabilities from chemical identification to the realms of synchrotron-level core-loss measurements and to low-loss, 10-100 meV excitations such as phonons, excitons, and valence structure. EELS measurements are easily correlated with electron diffraction and atomic-scale real-space imaging in a transmission electron microscope (TEM) to provide detailed local pictures of quasiparticle and bonding states. This perspective provides an overview of existing high-resolution EELS (HR-EELS) capabilities while also motivating the powerful next step in the field - ultrafast EELS in a TEM. Ultrafast EELS aims to combine atomic level, element specific, and correlated temporal measurements to better understand spatially specific excited state phenomena. Ultrafast EELS measurements also add to the abilities of steady-state HR-EELS by being able to image the electromagnetic field and use electrons to excite photon-forbidden and momentum-specific transitions. We discuss the technical challenges ultrafast HR-EELS currently faces, as well as how integration with in situ and cryo measurements could expand the technique to new systems of interest, especially molecular and biological samples.

physics.chem-ph↗

arXiv2023

Tunable and efficient ultraviolet generation in nanophotonic lithium niobate

On-chip ultraviolet sources are of great interest for building compact and scalable atomic clocks, quantum computers, and spectrometers; however, few material platforms are suitable for integrated ultraviolet light generation. Of these materials, thin-film lithium niobate is the most competitive due to its ability to be quasi-phase-matched, optical confinement, and nonlinear properties. Here, we present efficient (197 $\pm$ 5 %/W/cm$^{2}$) second harmonic generation of UV-A light in a periodically poled lithium niobate nanophotonic waveguide. We achieve on-chip ultraviolet powers of 30 $μ$W, demonstrating the potential for compact frequency-doubling of common near-IR laser diodes. By using a large cross section waveguide (600 nm film thickness), we achieve insensitivity to fabrication errors, and can attain first-order quasi-phase-matching with relatively long poling periods (>1.5 $μ$m). The device also demonstrates linear wavelength tunability using temperature. By varying the poling period, we have achieved the shortest reported wavelength (355 nm) generated through frequency doubling in thin-film lithium niobate. Our results open up new avenues to realize ultraviolet on-chip sources and chip-scale photonics.

physics.optics↗

arXiv2022

Ab Initio Calculations of XUV Ground and Excited States for First-Row Transition Metal Oxides

Transient X-ray spectroscopies have become ubiquitous in studying photoexcited dynamics in solar energy materials due to their sensitivity to carrier occupations and local chemical or structural dynamics. The interpretation of solid-state photoexcited dynamics, however, is complicated by the core-hole perturbation and the resulting many-body dynamics. Here, an ab initio, Bethe-Salpeter equation (BSE) approach is developed that can incorporate photoexcited state effects for solid-state materials. The extreme ultraviolet (XUV) absorption spectra for the ground, photoexcited, and thermally expanded states of first row transition metal oxides - $TiO_2, α-Cr_2O_3, β-MnO_2, α-Fe_2O_3, Co_3O_4, NiO, CuO, and ZnO$ - are calculated to demonstrate the accuracy of this approach. The theory is used to decompose the core-valence excitons into the separate components of the X-ray transition Hamiltonian for each of the transition metal oxides investigated. The decomposition provides a physical intuition about the origins of XUV spectral features as well as how the spectra will change following photoexcitation. The method is easily generalized to other K, L, M, and N edges to provide a general approach for analyzing transient X-ray absorption or reflection data.

cond-mat.mtrl-sci↗

arXiv2022

Ab Initio Prediction of Excited State and Polaron Effects in Transient XUV Measurements of $α$-Fe$_2$O$_3$

Transient X-ray and extreme ultraviolet (XUV) spectroscopies have become invaluable tools for studying photoexcited dynamics due to their sensitivity to carrier occupations and local chemical or structural changes. One of the most studied mate-rials using transient XUV spectroscopy is $α$-Fe$_2$O$_3$ because of its rich photoexcited dynamics, including small polaron formation. The interpretation of carrier and polaron effects in $α$-Fe$_2$O$_3$ is currently done using a semi-empirical method that is not transferrable to most materials. Here, an ab initio, Bethe-Salpeter equation (BSE) approach is developed that can incorporate photoexcited state effects for arbitrary materials systems. The accuracy of this approach is proven by calculating the XUV absorption spectra for the ground, photoexcited, and polaron states of $α$-Fe$_2$O$_3$. Furthermore, the theoretical approach allows for the projection of the core-valence excitons and different components of the X-ray transition Hamiltonian onto the band structure, providing new insights into old measurements. From this information, a physical intuition about the origins and nature of the transient XUV spectra can be built. A route to extracting electron and hole energies is even shown possible for highly angular momentum split XUV peaks. This method is easily generalized to K, L, M, and N edges to provide a general approach for analyzing transient X-ray absorption or reflection data.

cond-mat.mtrl-sci↗

arXiv2021

Measuring photoexcited electron and hole dynamics in ZnTe and modeling excited state core-valence effects in transient XUV reflection spectroscopy

Transient XUV spectroscopy is growing in popularity for the measurement of solar fuel and photovoltaic materials as it can separately measure electron and hole energies for multiple elements at once. However, interpretation of transient XUV measurements is complicated by changes in core-valence exciton and angular momentum effects after photoexcitation. Here, we report the photoexcited electron and hole dynamics for ZnTe, a promising material for CO2 reduction, following 400 nm excitation. We apply a newly developed, ab-initio theoretical approach based on density functional theory and the Bethe-Salpeter equation to accurately predict the excited state change in the measured transient XUV spectra. Electrons excited to the conduction band are measured with a thermalization rate of 70 $\pm$ 40 fs. Holes are excited with an average excess energy of ~1 eV and thermalize in 1130 $\pm$ 150 fs. The theoretical approach also allows an estimated assignment of inter- and intra-valley relaxation pathways in k-space using the relative amplitudes of the core-valence excitons.

cond-mat.mtrl-sci↗

arXiv2021

Element-specific electronic and structural dynamics using transient X-ray spectroscopy

Transient X-ray absorption techniques can measure ultrafast dynamics of the elemental edges in a material or multiple layer junction, giving them immense potential for deconvoluting concurrent processes. However, the interpretation of the photoexcited changes to an X-ray edge is not as simple as directly probing a transition with optical or infrared wavelengths. The core hole left by the core-level transition distorts the measured absorption and reflection spectra, both hiding and revealing different aspects of a photo-induced process. In this perspective, we describe the implementation and interpretation of transient X-ray experiments. This description includes a guide of how to choose the best wavelength and corresponding X-ray sources when designing an experiment. As an example, we focus on the rising use of extreme ultraviolet (XUV) spectroscopy for understanding performance limiting behaviors in solar energy materials, such as measurements of polaron formation, electron and hole kinetics, and charge transport in each layer of a metal-oxide-semiconductor junction. The ability of measuring photoexcited carriers in each layer of a multilayer junction could prove particularly impactful in the study of molecules, materials, and their combinations that lead to functional devices in photochemistry and photoelectrochemistry.

cond-mat.mtrl-sci↗

arXiv2021

Characterization of Carrier Cooling Bottleneck in Silicon Nanoparticles by Extreme Ultraviolet (XUV) Transient Absorption Spectroscopy

Silicon nanoparticles have the promise to surpass the theoretical efficiency limit of single-junction silicon photovoltaics by the creation of a "phonon bottleneck", a theorized slowing of the cooling rate of hot optical phonons that in turn reduces the cooling rate of hot carriers in the material. To verify the presence of a phonon bottleneck in silicon nanoparticles requires simultaneous resolution of electronic and structural changes at short timescales. Here, extreme ultraviolet transient absorption spectroscopy is used to observe the excited state electronic and lattice dynamics in polycrystalline silicon nanoparticles following 800 nm photoexcitation, which excites carriers with $0.35 \pm 0.03$ eV excess energy above the $Δ_1$ conduction band minimum. The nanoparticles have nominal 100 nm diameters with crystalline grain sized of about ~16 nm. The extracted carrier-phonon and phonon-phonon relaxation times of the nanoparticles are compared to those for a silicon (100) single crystal thin film at similar carrier densities ($2$ x $10^{19} cm^{-3}$ for the nanoparticles and $6$ x $10^{19} cm^{-3}$ for the thin film). The measured carrier-phonon and phonon-phonon scattering lifetimes for the polycrystalline nanoparticles are $870 \pm 40$ fs and $17.5 \pm 0.3$ ps, respectively, versus $195 \pm 20$ fs and $8.1 \pm 0.2$ ps, respectively, for the silicon thin film. The reduced scattering rates observed in the nanoparticles are consistent with the phonon bottleneck hypothesis.

cond-mat.mes-hall↗

arXiv2021

Designing High-Power, Octave Spanning Entangled Photon Sources for Quantum Spectroscopy

Entangled photon spectroscopy is a nascent field that has important implications for measurement and imaging across chemical, biology, and materials fields. Entangled photon spectroscopy potentially offers improved spatial and temporal-frequency resolutions, increased cross sections for multiphoton and nonlinear measurements, and new abilities in inducing or measuring quantum correlations. A critical step in enabling entangled photon spectroscopies is the creation of high-flux entangled sources that can use conventional detectors, as well as provide redundancy for the losses in realistic samples. Here, we report a periodically poled, chirped, lithium tantalate platform that generates entangled photon pairs with a $10^{-7}$ efficiency. For a near watt level diode laser, this results in a near $μ$W-level flux. The single photon per mode limit that is necessary to maintain non-classical photon behavior is still satisfied by distributing this power over up to an octave-spanning bandwidth. The spectral-temporal photon correlations are observed via a Michelson-type interferometer that measures the broadband Hong-Ou-Mandel two-photon interference. A coherence time of 245 fs for a 10 nm bandwidth in the collinear case and a 62 fs for a 125 nm bandwidth in the non-collinear case is measured using a CW pump laser, and, essentially, collecting the full photon cone. We outline in detail the numerical methods used for designing and tailoring the entangled photons source, such as changing center wavelength or bandwidth, with the ultimate aim of increasing the availability of high-flux UV-Vis entangled photon sources in the optical spectroscopy community.

physics.optics↗

arXiv2021

Electron Thermalization and Relaxation in Laser-Heated Nickel by Few-Femtosecond Core-Level Transient Absorption Spectroscopy

Direct measurements of photoexcited carrier dynamics in nickel are made using few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy at the nickel M$_{2,3}$ edge. It is observed that the core-level absorption lineshape of photoexcited nickel can be described by a Gaussian broadening ($σ$) and a red shift ($ω_{s}$) of the ground state absorption spectrum. Theory predicts, and the experimental results verify that after initial rapid carrier thermalization, the electron temperature increase ($ΔT$) is linearly proportional to the Gaussian broadening factor $σ$, providing quantitative real-time tracking of the relaxation of the electron temperature. Measurements reveal an electron cooling time for 50 nm thick polycrystalline nickel films of 640$\pm$80 fs. With hot thermalized carriers, the spectral red shift exhibits a power-law relationship with the change in electron temperature of $ω_{s}\proptoΔT^{1.5}$. Rapid electron thermalization via carrier-carrier scattering accompanies and follows the nominal 4 fs photoexcitation pulse until the carriers reach a quasi-thermal equilibrium. Entwined with a <6 fs instrument response function, carrier thermalization times ranging from 34 fs to 13 fs are estimated from experimental data acquired at different pump fluences and it is observed that the electron thermalization time decreases with increasing pump fluence. The study provides an initial example of measuring electron temperature and thermalization in metals in real time with XUV light, and it lays a foundation for further investigation of photoinduced phase transitions and carrier transport in metals with core-level absorption spectroscopy.

cond-mat.mtrl-sci↗

arXiv2020

Entangled light-matter interactions and spectroscopy

Entangled photons exhibit non-classical light-matter interactions that create new opportunities in materials and molecular science. For example, in entangled two-photon absorption, the intensity-dependence scales linearly as if only one photon was present. The entangled two-photon absorption cross section approaches but does not match the one-photon absorption cross section. The entangled two photon cross section also does not follow classical two photon molecular design motifs. Questions such as these seed the rich but nascent field of entangled light-matter interactions. In this perspective, we use the experimental developments in entangled photon spectroscopy to outline the current status of the field. Now that the fundamental tools are outlined, it is time to start the exploration of how materials, molecules, and devices can control or utilize interactions with entangled photons.

physics.optics↗

arXiv2019

Differentiating Photoexcited Carrier and Phonon Dynamics in the Δ, L, and Γ Valleys of Si(100) with Transient Extreme Ultraviolet Spectroscopy

Transient extreme ultraviolet (XUV) spectroscopy probes core level transitions to unoccupied valence and conduction band states. Uncertainty remains to what degree the core-hole created by the XUV transition modifies the measurement of photoexcited electron and hole energies. Here, the Si {Ł_{2,3}} edge is measured after photoexcitation of electrons to the Δ, L, and Γ valleys of Si(100). The measured changes in the XUV transition probability do not energetically agree with the increasing electron photoexcitation energy. The data therefore experimentally confirm that, for the Si {Ł_{2,3}} edge, the time-dependent electron and hole energies are partially obscured by the core-hole perturbation. A model based on many-body approximations and the Bethe-Salpeter equation is successfully used to predict the core-hole{\apos}s modification of the final transition density of states in terms of both electronic and structural dynamics. The resulting fit time constants match the excited state electron thermalization time and the inter-valley electron-phonon, intra-valley electron-phonon, and phonon-phonon scattering times previously measured in silicon. The outlined approach is a more comprehensive framework for interpreting transient XUV absorption spectra in photoexcited semiconductors.

cond-mat.mtrl-sci↗

arXiv2019

Photoexcited Small Polaron Formation in Goethite (α-FeOOH) Nanorods Probed by Transient Extreme Ultraviolet Spectroscopy

Small polaron formation limits the mobility and lifetimes of photoexcited carriers in metal oxides. As the ligand field strength increases, the carrier mobility decreases, but the effect on the photoexcited small polaron formation is still unknown. Extreme ultraviolet transient absorption spectroscopy is employed to measure small polaron formation rates and probabilities in goethite (α-FeOOH) crystalline nanorods at pump photon energies from 2.2 to 3.1 eV. The measured polaron formation time increases with excitation photon energy from 70 {\pm} 10 fs at 2.2 eV to 350 {\pm} 30 fs at 2.6 eV, whereas the polaron formation probability (85 {\pm} 10%) remains constant. By comparison to hematite (α-Fe2O3), an oxide analog, the role of ligand composition and metal center density in small polaron formation time is discussed. This work suggests that incorporating small changes in ligands and crystal structure could enable the control of photoexcited small polaron formation in metal oxides.

cond-mat.mtrl-sci↗

arXiv2019

Layer-Resolved Ultrafast XUV Measurement of Hole Transport in a Ni-TiO2-Si Photoanode

Metal-oxide-semiconductor junctions are central to most electronic and optoelectronic devices. Here, the element-specificity of broadband extreme ultraviolet (XUV) ultrafast pulses is used to measure the charge transport and recombination kinetics in each layer of a Ni-TiO2-Si junction. After photoexcitation of silicon, holes are inferred to transport from Si to Ni ballistically in ~100 fs, resulting in spectral shifts in the Ni M2,3 XUV edge that are characteristic of holes and the absence of holes initially in TiO2. Meanwhile, the electrons are observed to remain on Si. After picoseconds, the transient hole population on Ni is observed to back-diffuse through the TiO2, shifting the Ti spectrum to higher oxidation state, followed by electron-hole recombination at the Si-TiO2 interface and in the Si bulk. Electrical properties, such as the hole diffusion constant in TiO2 and the initial hole mobility in Si, are fit from these transient spectra and match well with values reported previously.

cond-mat.mtrl-sci↗

arXiv2018

Hot Phonon and Carrier Relaxation in Si(100) Determined by Transient Extreme Ultraviolet Spectroscopy

The thermalization of hot carriers and phonons gives direct insight into the scattering processes that mediate electrical and thermal transport. Obtaining the scattering rates for both hot carriers and phonons currently requires multiple measurements with incommensurate timescales. Here, transient extreme-ultraviolet (XUV) spectroscopy on the silicon 2p core level at 100 eV is used to measure hot carrier and phonon thermalization in Si(100) from tens of femtoseconds to 200 ps following photoexcitation of the indirect transition to the Δ valley at 800 nm. The ground state XUV spectrum is first theoretically predicted using a combination of a single plasmon pole model and the Bethe-Salpeter equation (BSE) with density functional theory (DFT). The excited state spectrum is predicted by incorporating the electronic effects of photo-induced state-filling, broadening, and band-gap renormalization into the ground state XUV spectrum. A time-dependent lattice deformation and expansion is also required to describe the excited state spectrum. The kinetics of these structural components match the kinetics of phonons excited from the electron-phonon and phonon-phonon scattering processes following photoexcitation. Separating the contributions of electronic and structural effects on the transient XUV spectra allows the carrier population, the population of phonons involved in inter- and intra-valley electron-phonon scattering, and the population of phonons involved in phonon-phonon scattering to be quantified as a function of delay time.

cond-mat.mtrl-sci↗

arXiv2017

Direct and Simultaneous Observation of Ultrafast Electron and Hole Dynamics in Germanium

Understanding excited carrier dynamics in semiconductors is crucial for the development of photovoltaics and efficient photonic devices. However, overlapping spectral features in optical/NIR pump-probe spectroscopy often render assignments of separate electron and hole carrier dynamics ambiguous. Here, ultrafast electron and hole dynamics in germanium nanocrystalline thin films are directly and simultaneously observed by attosecond transient absorption spectroscopy (ATAS) in the extreme ultraviolet at the germanium M_{4,5}-edge (~30 eV). We decompose the ATAS spectra into contributions of electronic state blocking and photo-induced band shifts at a carrier density of 8*10^{20}cm^{-3}. Separate electron and hole relaxation times are observed as a function of hot carrier energies. A first order electron and hole decay of ~1 ps suggests a Shockley-Read-Hall recombination mechanism. The simultaneous observation of electrons and holes with ATAS paves the way for investigating few to sub-femtosecond dynamics of both holes and electrons in complex semiconductor materials and across junctions.

cond-mat.mtrl-sci↗

arXiv2013

Terahertz Waveguiding in Silicon-Core Fibers

We propose the use of a silicon-core optical fiber for terahertz (THz) waveguide applications. Finite-difference time-domain simulations have been performed based on a cylindrical waveguide with a silicon core and silica cladding. High-resistivity silicon has a flat dispersion over a 0.1 - 3 THz range, making it viable for propagation of tunable narrowband CW THz and possibly broadband picosecond pules of THz radiation. Simulations show the propagation dynamics and the integrated intensity, from which transverse mode profiles and absorption lengths are extraced. It is found that for 140 - 250 micron core diameters the mode is primarily confined to the core, such that the overall absorbance is only slightly less than in bulk polycrystalline silicon.

physics.optics↗