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Seán R. Kavanagh

Publications and source records attributed to Seán R. Kavanagh.

At least 19 recordsLinked to original sources

Fast and Accurate Equivariant Foundation Models for Atomistic Simulation

Machine-learned interatomic potentials (MLIPs) have emerged as a transformative tool for computational materials science and chemistry, with universal potentials trained on large and diverse datasets now routinely deployed as 'foundation models' for downstream fine-tuning in targeted chemical spaces. Many scientific applications of the resulting models, such as molecular dynamics (MD), require high inference and training speeds as well as accuracy. In this work, we examine the limits of equivariant MLIPs, which directly encode physical symmetries in model architectures, to achieve these competing targets -- particularly in the regime of extremely large datasets where data efficiency is less critical. We show how this trade-off can be addressed, and present a family of foundation potentials in the NequIP and Allegro equivariant MLIP architectures which achieve leading inference speeds and strong scalability as well as excellent accuracies across a range of community benchmarks -- spanning materials discovery, thermal conductivity prediction, and near-equilibrium mechanical and thermodynamic properties. Accelerations implemented within the NequIP infrastructure now permit training of high-accuracy foundation potentials on ultra-large datasets with dramatically reduced computational cost. Alongside, we show that efforts to improve model accuracy for materials discovery should focus on dataset diversity and improved, consistent descriptions of transition metal compound energy surfaces.

physics.comp-ph↗

Carrier Localization in Pnictogen-Based Chalcohalides from Defect-Bound Hot Polarons

Pnictogen-based solar absorbers have gained prominence as promising nontoxic and stable alternatives to lead-halide perovskites (LHPs), but are severely limited by carrier localization, preventing their performance from approaching those of LHPs. Recent efforts have uncovered routes to overcome carrier localization, but these early efforts only considered intrinsic factors. Herein, we push beyond these limited early efforts, examining the role of defects, not only on cold carriers but also hot carriers. Focusing on the structurally one-dimensional pnictogen chalcohalide BiSBr, we find that whilst this material intrinsically does not exhibit carrier localization, vacancies introduced during synthesis or post-treatment lead to pronounced extrinsic self-trapping via the formation of defect-bound hot polarons-excited charge-carriers strongly coupled to local defect-induced vibrational modes. These above-gap defect states divert hot carriers from cooling to the band edge, thus depleting the mobile carrier population. Our findings establish the key role of defect-bound hot polarons in mediating extrinsic localization and offer new mechanistic insights into the interplay between defects, lattice coupling, and excited-state charge-carrier transport, which are critical to designing efficient perovskite-inspired solar absorbers.

cond-mat.mtrl-sci↗

Accelerating point defect simulations using data-driven and machine learning approaches

Point defects in solid-state materials are now routinely simulated using large supercell structures, requiring efficient quantum mechanical solutions. Data-driven and machine learning (ML) models trained on computational data can enable rapid defect property predictions and high-throughput screening. In this article, we provide an overview of prominent efforts to accelerate defect simulations using these approaches. We begin by discussing the motivations for data-driven techniques in defect modeling, and describe efforts over the past decade to use descriptor-based models for rapid screening of defect properties -- most notably in oxides. In particular, we discuss case studies where surrogate models and interatomic potentials were trained on density functional theory (DFT) data, leading to predictions with quantum-mechanical accuracies at a fraction of the cost. In addition to geometry relaxation and formation energy predictions, these interatomic potentials are capable of predicting phonon modes and vibrational free energies to yield defect energetics at finite temperatures -- representing a key frontier for computational defect research. We finish with a discussion on how to connect these approaches and their outputs with experimental data, and provide an outlook on this burgeoning sub-field.

cond-mat.mtrl-sci↗

Band-Like Transport and Cation Off-Centring in Ag/Bi-Based Solar Absorbers

Ag(I)-Bi(III)-based semiconductors have gained substantial attention as nontoxic, stable alternatives to lead-halide perovskites for optoelectronics, but are widely limited by carrier localization, which severely restricts diffusion lengths. The most efficient Ag/Bi solar absorber is AgBiS2, but diffusion lengths in nanocrystal films are <50 nm. Carrier localization in this rock-salt (Fm-3m) system is believed to arise from cation disorder, and so we herein investigate the layered cation-ordered analogue. Through beyond-DFT simulations combined with neutron and X-ray powder diffraction, we reveal that off-centring of Ag+ and Bi3+ cations is energetically-favoured in this cation-ordered phase. Despite local distortions in the AgS6 and BiS6 octahedra, band-like transport takes place, which, surprisingly, also occurs in the cation-disordered rock-salt phase when these materials are made as bulk powders. The cubic-phase powders have the same degree of cation disorder as the nanocrystals that have carrier localization, which suggests that extrinsic factors play a determining role. We ascribe the intrinsic band-like transport of both phases of AgBiS2 to its close packing, ensuring high electronic dimensionality. These insights offer pathways for designing solar absorbers avoiding carrier localization limitations, and call for future efforts to enhance the efficiency of AgBiS2 photovoltaics to focus on large-grained thin films, or improved nanocrystal surface passivation.

cond-mat.mtrl-sci↗

Defect-Limited Efficiency of Pnictogen Chalcohalide Solar Cells

Pnictogen chalcohalides (MChX) have recently emerged as promising nontoxic and environmentally friendly photovoltaic absorbers, combining strong light absorption coefficients with favorable low-temperature synthesis conditions. Despite these advantages and reported optimized morphologies, device efficiencies remain below 10%, far from their ideal radiative limit. To uncover the origin of these performance losses, we present a systematic and fully consistent first-principles investigation of the defect chemistry across the Bi-based chalcohalide family. Our results reveal a complex defect landscape dominated by chalcogen vacancies of low formation energy, which act as deep nonradiative recombination centers. Despite their moderate charge-carrier capture coefficients, the high equilibrium concentrations of these defects reduce the theoretical maximum efficiencies by 6% in BiSeI and by 10% in BiSeBr. In contrast, sulfur vacancies in BiSI and BiSBr are comparatively benign, presenting smaller capture coefficients due to weaker electron-phonon coupling. Interestingly, despite its huge nonradiative charge-carrier recombination rate, BiSeI presents the best conversion efficiency among all four compounds owing to its most suitable bandgap for outdoor photovoltaic applications. Our findings identify defect chemistry as a critical bottleneck in MChX solar cells and proposes chalcogen-rich synthesis conditions and targeted anion substitutions as effective strategies for mitigation of detrimental vacancies.

cond-mat.mtrl-sci↗

Spectroscopic Signatures of Structural Disorder and Electron-Phonon Interactions in Trigonal Selenium Thin Films for Solar Energy Harvesting

Selenium is experiencing renewed interest as a elemental semiconductor for a range of optoelectronic and energy applications due to its irresistibly simple composition and favorable wide bandgap. However, its high volatility and low radiative efficiency make it challenging to assess structural and optoelectronic quality, calling for advanced, non-destructive characterization methods. In this work, we employ a closed-space encapsulation strategy to prevent degradation during measurement and enable sensitive probing of vibrational and optoelectronic properties. Using temperature-dependent Raman and photoluminescence spectroscopy, we investigate grown-in stress, vibrational dynamics, and electron-phonon interactions in selenium thin films synthesized under nominally identical conditions across different laboratories. Our results reveal that short-range structural disorder is not intrinsic to the material, but highly sensitive to subtle processing variations, which strongly influence electron-phonon coupling and non-radiative recombination. We find that such structural disorder and grown-in stress likely promote the formation of extended defects, which act as dominant non-radiative recombination centers limiting carrier lifetime and open-circuit voltage in photovoltaic devices. These findings demonstrate that the optoelectronic quality of selenium thin films can be significantly improved through precise control of synthesis and post-deposition treatments, outlining a clear pathway toward optimizing selenium-based thin film technologies through targeted control of crystallization dynamics and microstructural disorder.

cond-mat.mtrl-sci↗

Identifying Split Vacancy Defects with Machine-Learned Foundation Models and Electrostatics

Point defects are ubiquitous in solid-state compounds, dictating many functional properties such as conductivity, catalytic activity and carrier recombination. Over the past decade, the prevalence of metastable defect geometries and their importance to relevant properties has been increasingly recognised. A striking example is split vacancies, where an isolated atomic vacancy transforms to a stoichiometry-conserving complex of two vacancies and an interstitial ($V_X \rightarrow [V_X + X_i + V_X]$), which can be accompanied by a dramatic energy lowering and change in behaviour. These species are particularly challenging to identify from computation, due to the `non-local' nature of this reconstruction. Here, I present an approach for the efficient identification of these defects, through tiered screening which combines geometric analysis, electrostatic energies and foundation machine learning (ML) models. This approach allows the screening of all solid-state compounds in the Materials Project database (including all entries in the ICSD, along with several thousand predicted metastable materials), identifying thousands of low energy split vacancy configurations, hitherto unknown. This study highlights both the potential utility of (foundation) machine-learning potentials, with important caveats, the significant prevalence of split vacancy defects in inorganic solids, and the importance of global optimisation approaches for defect modelling.

cond-mat.mtrl-sci↗

Chalcogen Vacancies Rule Charge Recombination in Pnictogen Chalcohalide Solar-Cell Absorbers

Pnictogen chalcohalides (MChX, M = Bi, Sb; Ch = S, Se; X = I, Br) represent an emerging class of nontoxic photovoltaic absorbers, valued for their favorable synthesis conditions and excellent optoelectronic properties. Despite their proposed defect tolerance, stemming from the antibonding nature of their valence and conduction bands, their experimentally reported power conversion efficiencies remain below 10%, far from the ideal Shockley-Queisser limit of 30%. Using advanced first-principles calculations and defect sampling techniques, we uncover a complex point-defect landscape in MChX materials, exemplified by BiSeI. Previously overlooked selenium vacancies are identified as critical nonradiative charge-recombination centers, which exist in high concentrations and, although exhibit modest capture coefficients, can reduce the maximum power conversion efficiency of BiSeI down to 24%. We argue that such detrimental effects can be mitigated by cation-poor synthesis conditions and strategic anion substitutions. Building on these insights, and supported by further simulations, we predict BiSBr to be a more defect-tolerant light absorber. This study not only identifies efficiency-limiting factors in MChX but also provides a roadmap for their improvement, paving the way for next-generation solution-processed chalcogenide photovoltaics.

cond-mat.mtrl-sci↗

High-performance training and inference for deep equivariant interatomic potentials

Machine learning interatomic potentials, particularly those based on deep equivariant neural networks, have demonstrated state-of-the-art accuracy and computational efficiency in atomistic modeling tasks like molecular dynamics and high-throughput screening. The size of datasets and demands of downstream workflows are growing rapidly, making robust and scalable software essential. This work presents a major overhaul of the NequIP framework focusing on multi-node parallelism, computational performance, and extensibility. The redesigned framework supports distributed training on large datasets and removes barriers preventing full utilization of the PyTorch 2.0 compiler at train time. We demonstrate this acceleration in a case study by training Allegro models on the SPICE 2 dataset of organic molecular systems. For inference, we introduce the first end-to-end infrastructure that uses the PyTorch Ahead-of-Time Inductor compiler for machine learning interatomic potentials. Additionally, we implement a custom kernel for the Allegro model's most expensive operation, the tensor product. Together, these advancements speed up molecular dynamics calculations on system sizes of practical relevance by up to a factor of 18.

physics.comp-ph↗

Sulfur Vacancies Limit the Open-circuit Voltage of Sb2S3 Solar Cells

Antimony sulfide (Sb2S3) is a promising candidate as an absorber layer for single-junction solar cells and the top subcell in tandem solar cells. However, the power conversion efficiency of Sb2S3-based solar cells has remained stagnant over the past decade, largely due to trap-assisted non-radiative recombination. Here we assess the trap-limited conversion efficiency of Sb2S3 by investigating non-radiative carrier capture rates for intrinsic point defects using first-principles calculations and Sah-Shockley statistics. Our results show that sulfur vacancies act as effective recombination centers, limiting the maximum efficiency of Sb2S3 to 16% light to electricity. The equilibrium concentrations of sulfur vacancies remain relatively high regardless of growth conditions, indicating the intrinsic limitations imposed by these vacancies on the performance of Sb2S3.

cond-mat.mtrl-sci↗

doped: Python toolkit for robust and repeatable charged defect supercell calculations

Defects are a universal feature of crystalline solids, dictating the key properties and performance of many functional materials. Given their crucial importance yet inherent difficulty in measuring experimentally, computational methods (such as DFT and ML/classical force-fields) are widely used to predict defect behaviour at the atomic level and the resultant impact on macroscopic properties. Here we report doped, a Python package for the generation, pre-/post-processing, and analysis of defect supercell calculations. doped has been built to implement the defect simulation workflow in an efficient and user-friendly -- yet powerful and fully-flexible -- manner, with the goal of providing a robust general-purpose platform for conducting reproducible calculations of solid-state defect properties.

cond-mat.mtrl-sci↗

Upper efficiency limit of Sb2Se3 solar cells

Antimony selenide (Sb2Se3) is at the forefront of an emerging class of sustainable photovoltaic materials. Despite notable developments over the past decade, the light-to-electricity conversion efficiency of Sb2Se3 has reached a plateau of ~10%. Is this an intrinsic limitation of the material or is there scope to rival the success of metal halide perovskite solar cells? Here we assess the trap-limited conversion efficiency of Sb2Se3. First-principles defect analysis of the hole and electron capture rates for point defects demonstrates the critical role of vacancies as active recombination centres. We predict an upper limit of 25% efficiency in Sb2Se3 grown under optimal equilibrium conditions where the concentrations of charged vacancies are minimised. We further reveal how the detrimental effect of Se vacancies can be reduced by extrinsic oxygen passivation, highlighting a pathway to achieve high-performance metal selenide solar cells close to the thermodynamic limit.

cond-mat.mtrl-sci↗

Machine-learning structural reconstructions for accelerated point defect calculations

Defects dictate the properties of many functional materials. To understand the behaviour of defects and their impact on physical properties, it is necessary to identify the most stable defect geometries. However, global structure searching is computationally challenging for high-throughput defect studies or materials with complex defect landscapes, like alloys or disordered solids. Here, we tackle this limitation by harnessing a machine-learning surrogate model to qualitatively explore the defect structural landscape. By learning defect motifs in a family of related metal chalcogenide and mixed anion crystals, the model successfully predicts favourable reconstructions for unseen defects in unseen compositions for 90% of cases, thereby reducing the number of first-principles calculations by 73%. Using CdSe$_x$Te$_{1-x}$ alloys as an exemplar, we train a model on the end member compositions and apply it to find the stable geometries of all inequivalent vacancies for a range of mixing concentrations, thus enabling more accurate and faster defect studies for configurational complex systems.

cond-mat.mtrl-sci↗

Factors Enabling Delocalized Charge-Carriers in Pnictogen-Based Solar Absorbers: In-depth Investigation into CuSbSe2

Inorganic semiconductors based on heavy pnictogen cations (Sb3+ and Bi3+) have gained significant attention as potential nontoxic and stable alternatives to lead-halide perovskites for solar cell applications. A limitation of these novel materials, which is being increasingly commonly found, is carrier localization, which substantially reduces mobilities and diffusion lengths. Herein, the layered příbramite CuSbSe2 is investigated and discovered to have delocalized free carriers, as shown through optical pump terahertz probe spectroscopy and temperature-dependent mobility measurements. Using a combination of theory and experiment, it is found that the underlying factors are: 1) weak coupling to acoustic phonons due to low deformation potentials, as lattice distortions are primarily accommodated through rigid inter-layer movement rather than straining inter-atomic bonds, and 2) weak coupling to optical phonons due to the ionic contributions to the dielectric constant being low compared to electronic contributions. This work provides important insights into how pnictogen-based semiconductors avoiding carrier localization could be identified.

cond-mat.mtrl-sci↗

Imperfections are not 0 K: free energy of point defects in crystals

Defects determine many important properties and applications of materials, ranging from doping in semiconductors, to conductivity in mixed ionic-electronic conductors used in batteries, to active sites in catalysts. The theoretical description of defect formation in crystals has evolved substantially over the past century. Advances in supercomputing hardware, and the integration of new computational techniques such as machine learning, provide an opportunity to model longer length and time-scales than previously possible. In this Tutorial Review, we cover the description of free energies for defect formation at finite temperatures, including configurational (structural, electronic, spin) and vibrational terms. We discuss challenges in accounting for metastable defect configurations, progress such as machine learning force fields and thermodynamic integration to directly access entropic contributions, and bottlenecks in going beyond the dilute limit of defect formation. Such developments are necessary to support a new era of accurate defect predictions in computational materials chemistry.

cond-mat.mtrl-sci↗

Band gap opening from displacive instabilities in layered covalent-organic frameworks $^†$

Covalent organic frameworks (COFs) offer a high degree of chemical and structural flexibility. There is a large family of COFs built from 2D sheets that are stacked to form extended crystals. While it has been common to represent the stacking as eclipsed with one repeating layer ("AA"), there is growing evidence that a more diverse range of stacking sequences is accessible. Herein, we report a computational study of layer stacking in two prototypical COFs, Tp-Azo and DAAQ-TFP, which have shown high performance as Li-ion battery electrodes. We find a striking preference for slipped structures with horizontal offsets between layers ranging from 1.7 Å to 3.5 Å in a potential energy minimum that forms a low energy ring. The associated symmetry breaking results in a pronounced change in the underlying electronic structure. A band gap opening of 0.8 - 1.4 eV is found due to modifications of the underlying valence and conduction band dispersion as explained from changes in the $π$ orbital overlap. The implications for the screening and selection of COF for energy applications are discussed.

cond-mat.mtrl-sci↗

Band Versus Polaron: Charge Transport in Antimony Chalcogenides

Antimony sulfide (Sb2S3) and selenide (Sb2Se3) are emerging earth-abundant absorbers for photovoltaic applications. Solar cell performance depends strongly on charge carrier transport properties but these remain poorly understood in Sb2X3. Here we report band-like transport in Sb2X3 by investigating the electron-lattice interaction and theoretical limits of carrier mobility using first-principles density functional theory and Boltzmann transport calculations. We demonstrate that transport in Sb2X3 is governed by large polarons with moderate Fröhlich coupling constants (~ 2), large polaron radii (extending over several unit cells) and high carrier mobility (an isotropic average of > 10 for both electrons and holes). The room temperature mobility is intrinsically limited by scattering from polar phonon modes and is further reduced in highly defective samples. Our study confirms that the performance of the Sb2X3 solar cells is not limited by intrinsic self-trapping.

cond-mat.mtrl-sci↗

Identifying the ground state structures of point defects in solids

Point defects are a universal feature of crystalline materials. Their identification is often addressed by combining experimental measurements with theoretical models. The standard approach of simulating defects is, however, prone to missing the ground state atomic configurations associated with energy-lowering reconstructions from the idealised crystallographic environment. Missed ground states compromise the accuracy of calculated properties. To address this issue, we report an approach to efficiently navigate the defect configurational landscape using targeted bond distortions and rattling. Application of our workflow to a range of materials ($\rm CdTe$, $\rm GaAs$, $\rm Sb_2S_3$, $\rm Sb_2Se_3$, $\rm CeO_2$, $\rm In_2O_3$, $\rm ZnO$, anatase-$\rm TiO_2$) reveals symmetry breaking in each host crystal that is not found via conventional local minimisation techniques. The point defect distortions are classified by the associated physico-chemical factors. We demonstrate the impact of these defect distortions on derived properties, including formation energies, concentrations and charge transition levels. Our work presents a step forward for quantitative modelling of imperfect solids.

cond-mat.mtrl-sci↗